TW202514768A - 製造具有凹部構造之構件之方法及具有凹部構造之構件 - Google Patents

製造具有凹部構造之構件之方法及具有凹部構造之構件 Download PDF

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Publication number
TW202514768A
TW202514768A TW113112268A TW113112268A TW202514768A TW 202514768 A TW202514768 A TW 202514768A TW 113112268 A TW113112268 A TW 113112268A TW 113112268 A TW113112268 A TW 113112268A TW 202514768 A TW202514768 A TW 202514768A
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TW
Taiwan
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catalyst material
component
group
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concave structure
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TW113112268A
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English (en)
Chinese (zh)
Inventor
小野良貴
佐野耕平
林泰夫
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日商Ａｇｃ股份有限公司
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Application filed by 日商Ａｇｃ股份有限公司 filed Critical 日商Ａｇｃ股份有限公司
Publication of TW202514768A publication Critical patent/TW202514768A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Surface Treatment Of Glass (AREA)
  • Catalysts (AREA)
TW113112268A 2023-05-31 2024-04-01 製造具有凹部構造之構件之方法及具有凹部構造之構件 TW202514768A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023089319 2023-05-31
JP2023-089319 2023-05-31

Publications (1)

Publication Number Publication Date
TW202514768A true TW202514768A (zh) 2025-04-01

Family

ID=93657139

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113112268A TW202514768A (zh) 2023-05-31 2024-04-01 製造具有凹部構造之構件之方法及具有凹部構造之構件

Country Status (5)

Country Link
US (1) US20260063997A1 (https=)
JP (1) JPWO2024247461A1 (https=)
CN (1) CN121219816A (https=)
TW (1) TW202514768A (https=)
WO (1) WO2024247461A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1539700A (en) * 1976-05-14 1979-01-31 Int Plasma Corp Process for etching sio2
JPS5587436A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Method of producing semiconductor device
JP3704965B2 (ja) * 1998-08-12 2005-10-12 セイコーエプソン株式会社 ドライエッチング方法及び装置
TW200620451A (en) * 2004-11-09 2006-06-16 Univ Osaka Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method
JP6028969B2 (ja) * 2012-08-24 2016-11-24 国立大学法人大阪大学 結晶基板に孔を形成する方法、並びに結晶基板内に配線や配管を有する機能性デバイス
JP7567547B2 (ja) * 2021-02-19 2024-10-16 Ａｇｃ株式会社 凹部を有するケイ素含有部材の製造方法

Also Published As

Publication number Publication date
US20260063997A1 (en) 2026-03-05
WO2024247461A1 (ja) 2024-12-05
CN121219816A (zh) 2025-12-26
JPWO2024247461A1 (https=) 2024-12-05

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