CN120981885A - 半导体器件的制造方法以及接合晶片 - Google Patents
半导体器件的制造方法以及接合晶片Info
- Publication number
- CN120981885A CN120981885A CN202380095859.2A CN202380095859A CN120981885A CN 120981885 A CN120981885 A CN 120981885A CN 202380095859 A CN202380095859 A CN 202380095859A CN 120981885 A CN120981885 A CN 120981885A
- Authority
- CN
- China
- Prior art keywords
- wafer
- wafers
- bonding
- sic
- segmented
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/11—Separation of active layers from substrates
- H10P95/112—Separation of active layers from substrates leaving a reusable substrate, e.g. epitaxial lift off
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
- H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
- H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2023/012178 WO2024201649A1 (ja) | 2023-03-27 | 2023-03-27 | 半導体デバイスの製造方法および接合ウェハ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN120981885A true CN120981885A (zh) | 2025-11-18 |
Family
ID=92904161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202380095859.2A Pending CN120981885A (zh) | 2023-03-27 | 2023-03-27 | 半导体器件的制造方法以及接合晶片 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2024201649A1 (https=) |
| KR (1) | KR20250150609A (https=) |
| CN (1) | CN120981885A (https=) |
| DE (1) | DE112023006051T5 (https=) |
| WO (1) | WO2024201649A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4715470B2 (ja) * | 2005-11-28 | 2011-07-06 | 株式会社Sumco | 剥離ウェーハの再生加工方法及びこの方法により再生加工された剥離ウェーハ |
| EP1835533B1 (en) * | 2006-03-14 | 2020-06-03 | Soitec | Method for manufacturing compound material wafers and method for recycling a used donor substrate |
| US9923063B2 (en) * | 2013-02-18 | 2018-03-20 | Sumitomo Electric Industries, Ltd. | Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same |
| DE102017119568B4 (de) | 2017-08-25 | 2024-01-04 | Infineon Technologies Ag | Siliziumkarbidbauelemente und Verfahren zum Herstellen von Siliziumkarbidbauelementen |
| CN112839813A (zh) * | 2018-10-16 | 2021-05-25 | 麻省理工学院 | 在升华的sic基底上使用碳缓冲的外延生长模板 |
| JP7512641B2 (ja) * | 2020-03-27 | 2024-07-09 | 住友金属鉱山株式会社 | 接合基板の製造方法 |
-
2023
- 2023-03-27 KR KR1020257030679A patent/KR20250150609A/ko active Pending
- 2023-03-27 CN CN202380095859.2A patent/CN120981885A/zh active Pending
- 2023-03-27 DE DE112023006051.7T patent/DE112023006051T5/de active Pending
- 2023-03-27 JP JP2025509280A patent/JPWO2024201649A1/ja active Pending
- 2023-03-27 WO PCT/JP2023/012178 patent/WO2024201649A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2024201649A1 (https=) | 2024-10-03 |
| DE112023006051T5 (de) | 2026-02-05 |
| KR20250150609A (ko) | 2025-10-20 |
| WO2024201649A1 (ja) | 2024-10-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |