CN1204604C - 半导体晶片表面保护粘结膜及其应用 - Google Patents
半导体晶片表面保护粘结膜及其应用 Download PDFInfo
- Publication number
- CN1204604C CN1204604C CNB031004059A CN03100405A CN1204604C CN 1204604 C CN1204604 C CN 1204604C CN B031004059 A CNB031004059 A CN B031004059A CN 03100405 A CN03100405 A CN 03100405A CN 1204604 C CN1204604 C CN 1204604C
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- semiconductor wafer
- film
- adhesive film
- base material
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- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 102100031244 Protein PET100 homolog, mitochondrial Human genes 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 238000012662 bulk polymerization Methods 0.000 description 1
- 125000004063 butyryl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- YACLQRRMGMJLJV-UHFFFAOYSA-N chloroprene Chemical compound ClC(=C)C=C YACLQRRMGMJLJV-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005354 coacervation Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- FYIBGDKNYYMMAG-UHFFFAOYSA-N ethane-1,2-diol;terephthalic acid Chemical compound OCCO.OC(=O)C1=CC=C(C(O)=O)C=C1 FYIBGDKNYYMMAG-UHFFFAOYSA-N 0.000 description 1
- MEGHWIAOTJPCHQ-UHFFFAOYSA-N ethenyl butanoate Chemical compound CCCC(=O)OC=C MEGHWIAOTJPCHQ-UHFFFAOYSA-N 0.000 description 1
- BLCTWBJQROOONQ-UHFFFAOYSA-N ethenyl prop-2-enoate Chemical compound C=COC(=O)C=C BLCTWBJQROOONQ-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- NVVZQXQBYZPMLJ-UHFFFAOYSA-N formaldehyde;naphthalene-1-sulfonic acid Chemical compound O=C.C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 NVVZQXQBYZPMLJ-UHFFFAOYSA-N 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- QMMOXUPEWRXHJS-UHFFFAOYSA-N pent-2-ene Chemical group CCC=CC QMMOXUPEWRXHJS-UHFFFAOYSA-N 0.000 description 1
- 125000002467 phosphate group Polymers [H]OP(=O)(O[H])O[*] 0.000 description 1
- 150000003013 phosphoric acid derivatives Polymers 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000223 polyglycerol Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- FBCQUCJYYPMKRO-UHFFFAOYSA-N prop-2-enyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC=C FBCQUCJYYPMKRO-UHFFFAOYSA-N 0.000 description 1
- QTECDUFMBMSHKR-UHFFFAOYSA-N prop-2-enyl prop-2-enoate Chemical compound C=CCOC(=O)C=C QTECDUFMBMSHKR-UHFFFAOYSA-N 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 125000003774 valeryl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
Abstract
Description
基材种类 | 特性 | 基材膜的构成 | 硬挺度(N)50℃/90℃ | 最大与最小之比 | 吸水尺寸变化率(%) | 粘着力(g/25mm) | 内表面磨削时晶片破裂数(个) | 粘结膜剥离前晶片翘曲量(mm) | 粘结膜剥离时的状况 | |
实施例1 | 1 | A+BA+CA+B+C | 腈系树脂70微米+EVA50微米 | 0.82/0.12 | 1.07 | 0.25 | 80 | 0 | 1.5mm | 无剥离问题晶片破损:0个 |
实施例2 | 2 | A+BA+CA+B+C | 腈系树脂70微米 | 0.30/0.08 | 1.07 | 0.25 | 75 | 0 | 1.8mm | 无剥离问题晶片破损:0个 |
实施例3 | 3 | A+BA+CA+B+C | 腈系树脂175微米 | 0.54/0.14 | 1.07 | 0.18 | 90 | 0 | 0.5mm | 无剥离问题晶片破损:0个 |
实施例4 | 4 | A+BA+CA+B+C | 环状聚烯烃树脂70微米 | 0.34/0.10 | 1.07 | 0.10 | 75 | 0 | 1.7mm | 无剥离问题晶片破损:0个 |
实施例5 | 5 | A+BA+CA+B+C | 非晶形PET100微米 | 0.51/0.06 | 1.10 | 0.10 | 90 | 0 | 1.0mm | 无剥离问题晶片破损:0个 |
基材种类 | 特性 | 基材膜的构成 | 硬挺度(N)50℃/90℃ | 最大与最小之比 | 吸水尺寸变化率(%) | 粘着力(g/25mm) | 内表面磨削时晶片破裂数(个) | 粘结膜剥离前晶片翘曲量(mm) | 粘结膜剥离时的状况 | |
对照例1 | 6 | A | PET70微米 | 0.54/0.44 | 1.02 | 0.02 | 75 | 0 | 1.9mm | 七个晶片端部有缺陷发生 |
对照例2 | 7 | A | PET175微米 | 0.80/0.74 | 1.02 | 0.02 | 90 | 0 | 0.5mm | 不能剥离 |
对照例3 | 8 | A | OPP70微米 | 0.40/0.37 | 1.58 | 0.02 | 80 | 0 | 5mm | 三个晶片端部有缺陷发生 |
对照例4 | 9 | - | EVA120微米 | 0.54/- | 3.56 | -0.02 | 85 | 5 | 26mm | 无剥离问题 |
Claims (8)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002004056 | 2002-01-11 | ||
JP2002004056 | 2002-01-11 | ||
JP2002124021 | 2002-04-25 | ||
JP2002124021 | 2002-04-25 |
Publications (2)
Publication Number | Publication Date |
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CN1431682A CN1431682A (zh) | 2003-07-23 |
CN1204604C true CN1204604C (zh) | 2005-06-01 |
Family
ID=26625486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB031004059A Expired - Fee Related CN1204604C (zh) | 2002-01-11 | 2003-01-10 | 半导体晶片表面保护粘结膜及其应用 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6879026B2 (zh) |
KR (1) | KR100547503B1 (zh) |
CN (1) | CN1204604C (zh) |
DE (1) | DE10300554A1 (zh) |
TW (1) | TW578222B (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4153325B2 (ja) * | 2003-02-13 | 2008-09-24 | 株式会社ディスコ | 半導体ウエーハの加工方法 |
JPWO2004075293A1 (ja) * | 2003-02-19 | 2006-06-01 | 日立化成工業株式会社 | 半導体用接着フィルム、これを用いた接着フィルム付金属板、接着フィルム付配線回路及び半導体装置並びに半導体装置の製造方法 |
CN100392811C (zh) * | 2003-09-01 | 2008-06-04 | 三井化学株式会社 | 粘接膜及使用该粘接膜的金属制膜方法 |
JP2005150235A (ja) * | 2003-11-12 | 2005-06-09 | Three M Innovative Properties Co | 半導体表面保護シート及び方法 |
JP2005183764A (ja) * | 2003-12-22 | 2005-07-07 | Mitsui Chemicals Inc | 半導体ウェハ表面保護用粘着フィルム及び該粘着フィルムを用いる半導体ウエハの裏面加工方法 |
KR100696287B1 (ko) * | 2004-01-28 | 2007-03-19 | 미쓰이 가가쿠 가부시키가이샤 | 반도체 웨이퍼의 보호방법 |
CN100463115C (zh) * | 2004-05-18 | 2009-02-18 | 日立化成工业株式会社 | 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法 |
JP4306540B2 (ja) * | 2004-06-09 | 2009-08-05 | セイコーエプソン株式会社 | 半導体基板の薄型加工方法 |
US20060082002A1 (en) * | 2004-10-06 | 2006-04-20 | Lintec Corporation | Sheet for circuit substrates and sheet of a circuit substrate for displays |
CN101116182B (zh) * | 2005-02-18 | 2010-10-06 | 三井化学株式会社 | 半导体晶片表面保护薄片及使用其的半导体晶片保护方法 |
US8592286B2 (en) * | 2005-10-05 | 2013-11-26 | Stats Chippac Ltd. | Ultra-thin wafer system and method of manufacture thereof |
JP5063389B2 (ja) | 2008-01-30 | 2012-10-31 | リンテック株式会社 | 回路基板用樹脂シート、回路基板用シート、及びディスプレイ用回路基板 |
JP2010062269A (ja) * | 2008-09-02 | 2010-03-18 | Three M Innovative Properties Co | ウェーハ積層体の製造方法、ウェーハ積層体製造装置、ウェーハ積層体、支持層剥離方法、及びウェーハの製造方法 |
CN102763211B (zh) | 2010-06-02 | 2014-11-05 | 三井化学东赛璐株式会社 | 半导体晶片表面保护用薄片、使用其的半导体晶片的保护方法以及半导体装置的制造方法 |
JP5965664B2 (ja) * | 2012-02-20 | 2016-08-10 | 三井化学株式会社 | 表面保護フィルム、これを用いた半導体装置の製造方法 |
JP5367903B2 (ja) * | 2012-03-19 | 2013-12-11 | 古河電気工業株式会社 | 半導体ウェハ表面保護用粘着テープ |
JP5117629B1 (ja) * | 2012-06-28 | 2013-01-16 | 古河電気工業株式会社 | ウェハ加工用粘着テープ |
JP6121003B2 (ja) * | 2014-02-14 | 2017-04-26 | 三井化学東セロ株式会社 | 半導体ウェハ表面保護用粘着フィルム、並びに粘着フィルムを用いる半導体ウェハの保護方法及び半導体装置の製造方法 |
KR101602880B1 (ko) * | 2014-06-18 | 2016-03-11 | (주)유니플라텍 | 고분자 수계 에멀전 전도성 조성물을 이용한 피티씨 소자의 제조 방법과, 그 제조 방법에 의해 제조된 피티씨 소자 및 그 피티씨 소자가 구비된 면상 발열체 |
CN105479958B (zh) * | 2014-10-09 | 2019-11-08 | 罗海波 | 摄像头保护镜片自动丝印加工方法及其装置 |
JP7277478B2 (ja) * | 2018-11-06 | 2023-05-19 | 日東電工株式会社 | 表面保護フィルムおよび光学部材 |
CN109352430B (zh) * | 2018-12-12 | 2020-12-04 | 中国电子科技集团公司第四十六研究所 | 一种减小锗磨削片弯曲度的加工方法 |
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JP3383227B2 (ja) | 1998-11-06 | 2003-03-04 | リンテック株式会社 | 半導体ウエハの裏面研削方法 |
JP4417460B2 (ja) | 1999-01-20 | 2010-02-17 | 日東電工株式会社 | 半導体ウエハ保護用粘着シート及び半導体ウエハの研削方法 |
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- 2003-01-10 US US10/339,344 patent/US6879026B2/en not_active Expired - Lifetime
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US20030219960A1 (en) | 2003-11-27 |
CN1431682A (zh) | 2003-07-23 |
TW578222B (en) | 2004-03-01 |
DE10300554A1 (de) | 2003-11-06 |
KR100547503B1 (ko) | 2006-01-31 |
KR20030061300A (ko) | 2003-07-18 |
TW200301929A (en) | 2003-07-16 |
US6879026B2 (en) | 2005-04-12 |
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