CN1197083C - 磁致电阻存储器及其读出方法 - Google Patents
磁致电阻存储器及其读出方法 Download PDFInfo
- Publication number
- CN1197083C CN1197083C CNB011325593A CN01132559A CN1197083C CN 1197083 C CN1197083 C CN 1197083C CN B011325593 A CNB011325593 A CN B011325593A CN 01132559 A CN01132559 A CN 01132559A CN 1197083 C CN1197083 C CN 1197083C
- Authority
- CN
- China
- Prior art keywords
- voltage
- read
- storage unit
- bit line
- input end
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10043440A DE10043440C2 (de) | 2000-09-04 | 2000-09-04 | Magnetoresistiver Speicher und Verfahren zu seinem Auslesen |
DE10043440.1 | 2000-09-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1343985A CN1343985A (zh) | 2002-04-10 |
CN1197083C true CN1197083C (zh) | 2005-04-13 |
Family
ID=7654854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011325593A Expired - Fee Related CN1197083C (zh) | 2000-09-04 | 2001-09-04 | 磁致电阻存储器及其读出方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6487109B2 (zh) |
EP (1) | EP1204120B1 (zh) |
JP (1) | JP3746970B2 (zh) |
KR (1) | KR100453580B1 (zh) |
CN (1) | CN1197083C (zh) |
DE (2) | DE10043440C2 (zh) |
TW (1) | TW525160B (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6418046B1 (en) * | 2001-01-30 | 2002-07-09 | Motorola, Inc. | MRAM architecture and system |
US6552928B1 (en) * | 2001-02-23 | 2003-04-22 | Read-Rite Corporation | Read-write control circuit for magnetic tunnel junction MRAM |
DE10149737A1 (de) * | 2001-10-09 | 2003-04-24 | Infineon Technologies Ag | Halbleiterspeicher mit sich kreuzenden Wort- und Bitleitungen, an denen magnetoresistive Speicherzellen angeordnet sind |
US6545906B1 (en) * | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
JP4052829B2 (ja) * | 2001-12-12 | 2008-02-27 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
US6606262B2 (en) * | 2002-01-10 | 2003-08-12 | Hewlett-Packard Development Company, L.P. | Magnetoresistive random access memory (MRAM) with on-chip automatic determination of optimized write current method and apparatus |
US7095646B2 (en) * | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
KR100521363B1 (ko) * | 2002-10-07 | 2005-10-13 | 삼성전자주식회사 | 마그네틱 랜덤 액세스 메모리의 데이터 센싱 회로 및 그방법 |
JP3766380B2 (ja) * | 2002-12-25 | 2006-04-12 | 株式会社東芝 | 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ読み出し方法 |
US6813181B1 (en) * | 2003-05-27 | 2004-11-02 | Infineon Technologies Ag | Circuit configuration for a current switch of a bit/word line of a MRAM device |
US6956763B2 (en) * | 2003-06-27 | 2005-10-18 | Freescale Semiconductor, Inc. | MRAM element and methods for writing the MRAM element |
JP2005026576A (ja) * | 2003-07-04 | 2005-01-27 | Sony Corp | 記憶装置 |
US6865108B2 (en) * | 2003-07-07 | 2005-03-08 | Hewlett-Packard Development Company, L.P. | Memory cell strings in a resistive cross point memory cell array |
US6958933B2 (en) * | 2003-07-07 | 2005-10-25 | Hewlett-Packard Development Company, L.P. | Memory cell strings |
US6967366B2 (en) * | 2003-08-25 | 2005-11-22 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory with reduced switching field variation |
US7129098B2 (en) * | 2004-11-24 | 2006-10-31 | Freescale Semiconductor, Inc. | Reduced power magnetoresistive random access memory elements |
US9715925B2 (en) * | 2014-09-30 | 2017-07-25 | Sandisk Technologies Llc | Methods and apparatus for vertical cross point re-RAM array bias calibration |
US9595323B1 (en) * | 2016-02-04 | 2017-03-14 | Sandisk Technologies Llc | Word line compensation for memory arrays |
DE102018103694B4 (de) | 2018-02-20 | 2022-08-11 | Infineon Technologies Ag | Leseverstärker-Schaltkreis, Speichervorrichtung, Verfahren zum Ermitteln eines Zustandswerts einer resistiven Speicherzelle und Verfahren zum Betreiben einer Speichervorrichtung |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6064083A (en) * | 1995-04-21 | 2000-05-16 | Johnson; Mark B. | Hybrid hall effect memory device and method of operation |
US5654566A (en) * | 1995-04-21 | 1997-08-05 | Johnson; Mark B. | Magnetic spin injected field effect transistor and method of operation |
JP3767930B2 (ja) * | 1995-11-13 | 2006-04-19 | 沖電気工業株式会社 | 情報の記録・再生方法および情報記憶装置 |
TW411471B (en) * | 1997-09-17 | 2000-11-11 | Siemens Ag | Memory-cell device |
US6259644B1 (en) * | 1997-11-20 | 2001-07-10 | Hewlett-Packard Co | Equipotential sense methods for resistive cross point memory cell arrays |
JP3773031B2 (ja) * | 1999-01-13 | 2006-05-10 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | Mram用の読出/書込構造 |
DE19914488C1 (de) * | 1999-03-30 | 2000-05-31 | Siemens Ag | Vorrichtung zur Bewertung der Zellenwiderstände in einem magnetoresistiven Speicher |
DE19947118C1 (de) * | 1999-09-30 | 2001-03-15 | Infineon Technologies Ag | Verfahren und Schaltungsanordnung zum Bewerten des Informationsgehalts einer Speicherzelle |
-
2000
- 2000-09-04 DE DE10043440A patent/DE10043440C2/de not_active Expired - Fee Related
-
2001
- 2001-08-07 DE DE50113114T patent/DE50113114D1/de not_active Expired - Lifetime
- 2001-08-07 EP EP01119075A patent/EP1204120B1/de not_active Expired - Lifetime
- 2001-09-03 JP JP2001266554A patent/JP3746970B2/ja not_active Expired - Fee Related
- 2001-09-03 TW TW090121762A patent/TW525160B/zh not_active IP Right Cessation
- 2001-09-04 CN CNB011325593A patent/CN1197083C/zh not_active Expired - Fee Related
- 2001-09-04 US US09/946,941 patent/US6487109B2/en not_active Expired - Lifetime
- 2001-09-04 KR KR10-2001-0054086A patent/KR100453580B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6487109B2 (en) | 2002-11-26 |
CN1343985A (zh) | 2002-04-10 |
EP1204120A3 (de) | 2003-04-09 |
EP1204120A2 (de) | 2002-05-08 |
DE10043440A1 (de) | 2002-03-28 |
DE50113114D1 (de) | 2007-11-22 |
JP3746970B2 (ja) | 2006-02-22 |
DE10043440C2 (de) | 2002-08-29 |
TW525160B (en) | 2003-03-21 |
KR20020018977A (ko) | 2002-03-09 |
JP2002133856A (ja) | 2002-05-10 |
KR100453580B1 (ko) | 2004-10-20 |
US20020048185A1 (en) | 2002-04-25 |
EP1204120B1 (de) | 2007-10-10 |
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Legal Events
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: QIMONDA AG Free format text: FORMER OWNER: INFINEON TECHNOLOGIES AG Effective date: 20121128 |
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C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Munich, Germany Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: Finney ang Technology Co.,Ltd. |
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TR01 | Transfer of patent right |
Address after: Munich, Germany Patentee after: QIMONDA AG Effective date of registration: 20121128 Effective date of registration: 20121128 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: Munich, Germany Patentee before: Infineon Technologies AG |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20151230 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050413 Termination date: 20160904 |
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CF01 | Termination of patent right due to non-payment of annual fee |