CN119487713A - 半导体激光光源装置 - Google Patents

半导体激光光源装置 Download PDF

Info

Publication number
CN119487713A
CN119487713A CN202280097805.5A CN202280097805A CN119487713A CN 119487713 A CN119487713 A CN 119487713A CN 202280097805 A CN202280097805 A CN 202280097805A CN 119487713 A CN119487713 A CN 119487713A
Authority
CN
China
Prior art keywords
support block
laser light
block
light source
source device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280097805.5A
Other languages
English (en)
Chinese (zh)
Inventor
福岛飒太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN119487713A publication Critical patent/CN119487713A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262Photo-diodes, e.g. transceiver devices, bidirectional devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02216Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02251Out-coupling of light using optical fibres
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/0231Stems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02315Support members, e.g. bases or carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0239Combinations of electrical or optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02407Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02469Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226Modulation at ultra-high frequencies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN202280097805.5A 2022-07-19 2022-07-19 半导体激光光源装置 Pending CN119487713A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/027979 WO2024018501A1 (ja) 2022-07-19 2022-07-19 半導体レーザ光源装置

Publications (1)

Publication Number Publication Date
CN119487713A true CN119487713A (zh) 2025-02-18

Family

ID=86096157

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280097805.5A Pending CN119487713A (zh) 2022-07-19 2022-07-19 半导体激光光源装置

Country Status (5)

Country Link
US (1) US20250210932A1 (https=)
JP (1) JP7264320B1 (https=)
CN (1) CN119487713A (https=)
TW (1) TWI859936B (https=)
WO (1) WO2024018501A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230155572A (ko) * 2021-04-27 2023-11-10 미쓰비시덴키 가부시키가이샤 반도체 레이저 광원 장치
US20250112437A1 (en) * 2023-09-29 2025-04-03 Keysight Technologies, Inc. Bandwidth improvement of through-hole distributed feedback laser
WO2025229704A1 (ja) * 2024-04-30 2025-11-06 三菱電機株式会社 光モジュール
CN118970617A (zh) * 2024-06-25 2024-11-15 陕西源杰半导体科技股份有限公司 一种高速电吸收调制激光器的封装结构
JP7745811B1 (ja) * 2024-12-20 2025-09-29 三菱電機株式会社 Can型光モジュール

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015793A (ja) * 1999-06-30 2001-01-19 Toshiba Electronic Engineering Corp 光送受信モジュール
JP2003198036A (ja) * 2001-12-28 2003-07-11 Mitsubishi Electric Corp 光半導体実装構造及び光モジュール
JP2004095736A (ja) * 2002-08-30 2004-03-25 Kyocera Corp 光半導体素子収納用パッケージおよび光半導体装置
KR101349582B1 (ko) * 2009-06-02 2014-01-09 미쓰비시덴키 가부시키가이샤 반도체 광변조 장치
JP5144628B2 (ja) * 2009-11-19 2013-02-13 日本電信電話株式会社 To−can型tosaモジュール
JP5428978B2 (ja) * 2010-03-19 2014-02-26 三菱電機株式会社 半導体光変調装置
CN109075527B (zh) * 2016-04-26 2021-06-29 京瓷株式会社 半导体封装件及使用其的半导体装置
JP7019838B2 (ja) * 2018-11-21 2022-02-15 三菱電機株式会社 光モジュール
CN111352192B (zh) * 2018-12-20 2021-08-10 青岛海信宽带多媒体技术有限公司 一种光模块
JP6753478B2 (ja) * 2019-01-30 2020-09-09 三菱電機株式会社 光モジュール
WO2020187034A1 (zh) * 2019-03-18 2020-09-24 佑胜光电股份有限公司 光学收发模组及光纤缆线模组
JP2021044331A (ja) * 2019-09-10 2021-03-18 CIG Photonics Japan株式会社 光サブアッセンブリ及び光モジュール
JP7419188B2 (ja) * 2019-11-01 2024-01-22 CIG Photonics Japan株式会社 光サブアッセンブリ
US11289875B2 (en) * 2019-11-24 2022-03-29 Applied Optoelectronics, Inc. Temperature control device with a plurality of electrically conductive terminals, and an optical subassembly module implementing same
KR20230155572A (ko) * 2021-04-27 2023-11-10 미쓰비시덴키 가부시키가이샤 반도체 레이저 광원 장치

Also Published As

Publication number Publication date
JPWO2024018501A1 (https=) 2024-01-25
JP7264320B1 (ja) 2023-04-25
TW202406257A (zh) 2024-02-01
US20250210932A1 (en) 2025-06-26
TWI859936B (zh) 2024-10-21
WO2024018501A1 (ja) 2024-01-25

Similar Documents

Publication Publication Date Title
JP7264320B1 (ja) 半導体レーザ光源装置
US11703378B2 (en) Optical module
JP5180176B2 (ja) To−can型tosaモジュール
JP2015088641A (ja) 光モジュール
CN107430293A (zh) 高频传输线路以及光电路
US11923652B2 (en) Header for semiconductor package, and semiconductor package
JP7020590B1 (ja) レーザ光源装置
JP6984801B1 (ja) 半導体レーザ光源装置
JP2011100785A (ja) To−can形光モジュール用パッケージおよびto−can形光モジュール
JP7036286B1 (ja) 光半導体装置
JP7544304B1 (ja) 光モジュールおよび光トランシーバ
TWI863260B (zh) 半導體雷射光源裝置
JP4587218B2 (ja) パッケージ型半導体装置
JP2004335584A (ja) 半導体パッケージ
WO2022162835A1 (ja) 半導体装置
CN109586797B (zh) 一种激光器发射组件以及相应的光模块
JP7246590B1 (ja) 半導体レーザ光源装置
JP7625157B1 (ja) 高周波基板
JP2004235379A (ja) 光パッケージ及びそれを用いた光モジュール
US20240267125A1 (en) Optical transmission module

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination