CN1183034C - 四氯化硅氢化生产三氯氢硅的方法 - Google Patents
四氯化硅氢化生产三氯氢硅的方法 Download PDFInfo
- Publication number
- CN1183034C CN1183034C CNB021045240A CN02104524A CN1183034C CN 1183034 C CN1183034 C CN 1183034C CN B021045240 A CNB021045240 A CN B021045240A CN 02104524 A CN02104524 A CN 02104524A CN 1183034 C CN1183034 C CN 1183034C
- Authority
- CN
- China
- Prior art keywords
- hydrogenation
- silicon tetrachloride
- sicl
- trichlorosilane
- sicl4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 239000005049 silicon tetrachloride Substances 0.000 title claims abstract description 12
- 230000008569 process Effects 0.000 title claims description 10
- 150000004754 hydrosilicons Chemical class 0.000 title abstract 2
- 238000005984 hydrogenation reaction Methods 0.000 claims abstract description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 239000003054 catalyst Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 239000000843 powder Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 20
- 235000013312 flour Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 9
- 239000005052 trichlorosilane Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 7
- 239000005046 Chlorosilane Substances 0.000 claims description 6
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 4
- 239000012190 activator Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 238000005194 fractionation Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012716 precipitator Substances 0.000 claims description 3
- 238000004064 recycling Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 230000009469 supplementation Effects 0.000 claims description 3
- 230000007420 reactivation Effects 0.000 claims description 2
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 5
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000011863 silicon-based powder Substances 0.000 abstract 3
- 238000013329 compounding Methods 0.000 abstract 1
- 238000011031 large-scale manufacturing process Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 230000009466 transformation Effects 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 5
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 3
- 150000002815 nickel Chemical class 0.000 description 3
- 102000018779 Replication Protein C Human genes 0.000 description 1
- 108010027647 Replication Protein C Proteins 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 208000012839 conversion disease Diseases 0.000 description 1
- 229940045803 cuprous chloride Drugs 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
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- Silicon Compounds (AREA)
Abstract
Description
实施例 | 反应条件与一次转化率 | |||
H2∶SiCl4 | 温度(℃) | 压力Mpa(表) | 一次转化率(%) | |
1 | 1∶1 | 500 | 1.5 | 15 |
2 | 5∶1 | 500 | 1.5 | 35 |
3 | 10∶1 | 500 | 1.5 | 30 |
4 | 2∶1 | 400 | 1.5 | ~19 |
5 | 2∶1 | 450 | 1.5 | ~25 |
6 | 2∶1 | 500 | 1.5 | 35 |
7 | 2∶1 | 500 | 1.35 | 25 |
8 | 2∶1 | 500 | 1.2 | 18 |
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021045240A CN1183034C (zh) | 2002-02-08 | 2002-02-08 | 四氯化硅氢化生产三氯氢硅的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021045240A CN1183034C (zh) | 2002-02-08 | 2002-02-08 | 四氯化硅氢化生产三氯氢硅的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1436725A CN1436725A (zh) | 2003-08-20 |
CN1183034C true CN1183034C (zh) | 2005-01-05 |
Family
ID=27627971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021045240A Expired - Lifetime CN1183034C (zh) | 2002-02-08 | 2002-02-08 | 四氯化硅氢化生产三氯氢硅的方法 |
Country Status (1)
Country | Link |
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CN (1) | CN1183034C (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004019759A1 (de) * | 2004-04-23 | 2005-11-17 | Degussa Ag | Verfahren zur Herstellung von HSiCI3 durch katalytische Hydrodehalogenierung von SiCI4 |
DE102004019760A1 (de) * | 2004-04-23 | 2005-11-17 | Degussa Ag | Verfahren zur Herstellung von HSiCI3 durch katalytische Hydrodehalogenierung von SiCI4 |
DE102006050329B3 (de) * | 2006-10-25 | 2007-12-13 | Wacker Chemie Ag | Verfahren zur Herstellung von Trichlorsilan |
CN101143723B (zh) | 2007-08-08 | 2010-09-01 | 徐州东南多晶硅材料研发有限公司 | 制备三氯氢硅和多晶硅的改进方法和装置 |
CN101700886B (zh) * | 2009-11-30 | 2011-08-03 | 乐山乐电天威硅业科技有限责任公司 | 由四氯化硅制取三氯氢硅的方法 |
CN101817528B (zh) * | 2010-03-26 | 2011-09-14 | 成都鸿宝新能源科技有限公司 | SiCl4氢化生产SiHCl3的节能降耗循环系统及工艺 |
CN201720046U (zh) * | 2010-05-31 | 2011-01-26 | 比亚迪股份有限公司 | 流化床反应器及四氯化硅氢化制备三氯氢硅的装置 |
CN102114426B (zh) * | 2010-12-23 | 2012-11-21 | 内蒙古工业大学 | 四氯硅烷冷氢化专用催化剂及其制备方法 |
CN103055867B (zh) * | 2011-10-21 | 2015-04-29 | 中国石油化工股份有限公司 | 一种镍催化剂、制备方法及其应用 |
CN102815709B (zh) * | 2012-08-10 | 2014-08-06 | 中国恩菲工程技术有限公司 | 一种四氯化硅冷氢化制备三氯氢硅的方法 |
CN102814181B (zh) * | 2012-08-10 | 2015-04-01 | 中国恩菲工程技术有限公司 | 一种用于四氯化硅冷氢化制备三氯氢硅的催化剂及其制备方法 |
-
2002
- 2002-02-08 CN CNB021045240A patent/CN1183034C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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CN1436725A (zh) | 2003-08-20 |
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C14 | Grant of patent or utility model | ||
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Owner name: CHINA YOUSE ENGINEERING CO., LTD. Free format text: FORMER NAME: CHINA COLORED METAL DESIGN RESEARCH INSTITUTE |
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CP03 | Change of name, title or address |
Address after: No. 12 Fuxing Road, Beijing Patentee after: China Nonferrous Metals Engineering Company Limited Address before: No. 12 Fuxing Road, Beijing Patentee before: China Non-ferrous Engineering Design General Inst. |
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Luoyang Zhonggui High-tech Co., Ltd. Assignor: China Nonferrous Metals Engineering Company Limited Contract record no.: 2011410000011 Denomination of invention: Silicon tetrachloride hydrogenating process of producing trichloro hydrosilicon Granted publication date: 20050105 License type: Exclusive License Open date: 20030820 Record date: 20110322 |
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Inventor after: Shen Zuxiang Inventor after: Xie Donghui Inventor after: Wu Keli Inventor after: Yan Dazhou Inventor after: Liu Jianjun Inventor after: Tang Chuanbin Inventor after: Xiao Ronghui Inventor after: Wan Ye Inventor after: Yang Yongliang Inventor after: Wang Shaofen Inventor before: Shen Zuxiang Inventor before: Wu Keli Inventor before: Yan Dazhou Inventor before: Liu Jianjun Inventor before: Tang Chuanbin |
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Free format text: CORRECT: INVENTOR; FROM: SHEN ZUXIANG WU KELI YAN DAZHOU LIU JIANJUN TANG ZHUANBIN TO: SHEN ZUXIANG WU KELI YAN DAZHOU LIU JIANJUN TANG ZHUANBIN XIAO RONGHUI WAN YE YANG YONGLIANG WANG SHAOFEN XIE DONGHUI |
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C53 | Correction of patent of invention or patent application | ||
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Inventor after: Yan Dazhou Inventor after: Yang Yongliang Inventor after: Xie Donghui Inventor after: Liu Jianjun Inventor after: Wu Keli Inventor after: Tang Chuanbin Inventor after: Xiao Ronghui Inventor after: Shen Zuxiang Inventor after: Lu Zhifang Inventor after: Zong Shaoxing Inventor after: Wang Shaofen Inventor after: Wan Ye Inventor before: Shen Zuxiang Inventor before: Xie Donghui Inventor before: Wu Keli Inventor before: Yan Dazhou Inventor before: Liu Jianjun Inventor before: Tang Chuanbin Inventor before: Xiao Ronghui Inventor before: Wan Ye Inventor before: Yang Yongliang Inventor before: Wang Shaofen |
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Free format text: CORRECT: INVENTOR; FROM: SHEN ZUXIANG WU KELI YAN DAZHOU LIU JIANJUN TANG CHUANBIN XIAO RONGHUI WAN YE YANG YONGLIANG WANG SHAOFEN XIE DONGHUI TO: YAN DAZHOU WU KELI TANG CHUANBIN XIAO RONGHUI SHEN ZUXIANG LU ZHIFANG ZONG SHAOXING WANG SHAOFEN WAN YE YANG YONGLIANG XIE DONGHUI LIU JIANJUN |
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Granted publication date: 20050105 |