CN1436725A - 四氯化硅氢化生产三氯氢硅的方法 - Google Patents
四氯化硅氢化生产三氯氢硅的方法 Download PDFInfo
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- CN1436725A CN1436725A CN 02104524 CN02104524A CN1436725A CN 1436725 A CN1436725 A CN 1436725A CN 02104524 CN02104524 CN 02104524 CN 02104524 A CN02104524 A CN 02104524A CN 1436725 A CN1436725 A CN 1436725A
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- CN
- China
- Prior art keywords
- silicon tetrachloride
- sicl
- hydrogenating
- temperature
- producing trichlorosilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 239000005049 silicon tetrachloride Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title abstract description 12
- 150000004754 hydrosilicons Chemical class 0.000 title 1
- 229910003910 SiCl4 Inorganic materials 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 13
- 239000003054 catalyst Substances 0.000 claims abstract description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 238000005984 hydrogenation reaction Methods 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 10
- 239000005052 trichlorosilane Substances 0.000 claims description 10
- 238000001994 activation Methods 0.000 claims description 7
- 239000005046 Chlorosilane Substances 0.000 claims description 6
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 5
- 239000000428 dust Substances 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 claims description 4
- 239000012071 phase Substances 0.000 claims description 4
- 239000012190 activator Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 2
- 230000035484 reaction time Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 17
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 238000011031 large-scale manufacturing process Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 229910003822 SiHCl3 Inorganic materials 0.000 description 6
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 150000001879 copper Chemical class 0.000 description 3
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 150000002815 nickel Chemical class 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 102000018779 Replication Protein C Human genes 0.000 description 1
- 108010027647 Replication Protein C Proteins 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 208000012839 conversion disease Diseases 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229940045803 cuprous chloride Drugs 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000652 nickel hydride Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
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- Silicon Compounds (AREA)
Abstract
Description
实施例 | 反应条件与一次转化率 | |||
H2∶SiCl4 | 温度(℃) | 压力Mpa(表) | 一次转化率(%) | |
1 | 1∶1 | 500 | 1.5 | 15 |
2 | 5∶1 | 500 | 1.5 | 35 |
3 | 10∶1 | 500 | 1.5 | 30 |
4 | 2∶1 | 400 | 1.5 | ~19 |
5 | 2∶1 | 450 | 1.5 | ~25 |
6 | 2∶1 | 500 | 1.5 | 35 |
7 | 2∶1 | 500 | 1.35 | 25 |
8 | 2∶1 | 500 | 1.2 | 18 |
Claims (6)
Priority Applications (1)
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CNB021045240A CN1183034C (zh) | 2002-02-08 | 2002-02-08 | 四氯化硅氢化生产三氯氢硅的方法 |
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CNB021045240A CN1183034C (zh) | 2002-02-08 | 2002-02-08 | 四氯化硅氢化生产三氯氢硅的方法 |
Publications (2)
Publication Number | Publication Date |
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CN1436725A true CN1436725A (zh) | 2003-08-20 |
CN1183034C CN1183034C (zh) | 2005-01-05 |
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CNB021045240A Expired - Lifetime CN1183034C (zh) | 2002-02-08 | 2002-02-08 | 四氯化硅氢化生产三氯氢硅的方法 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009018713A1 (fr) | 2007-08-08 | 2009-02-12 | Xuzhou Southeast Polysilicon R & D Ltd | Procédés et dispositifs améliorés servant à préparer trichloro-hydrosilicium et polysilicium |
CN1946637B (zh) * | 2004-04-23 | 2010-06-16 | 德古萨公司 | 通过四氯化硅的催化加氢脱卤制备三氯甲硅烷的方法 |
CN101817528A (zh) * | 2010-03-26 | 2010-09-01 | 成都鸿宝新能源科技有限公司 | SiCl4氢化生产SiHCl3的节能降耗循环工艺及系统 |
CN1946636B (zh) * | 2004-04-23 | 2011-01-26 | 赢创德固赛有限责任公司 | 通过四氯化硅的催化加氢脱卤制备三氯甲硅烷的工艺 |
CN102114426A (zh) * | 2010-12-23 | 2011-07-06 | 内蒙古工业大学 | 四氯硅烷冷氢化专用催化剂及其制备方法 |
CN101700886B (zh) * | 2009-11-30 | 2011-08-03 | 乐山乐电天威硅业科技有限责任公司 | 由四氯化硅制取三氯氢硅的方法 |
WO2011150642A1 (en) * | 2010-05-31 | 2011-12-08 | Byd Company Limited | Fluidized bed reactor and device for preparing trichlorosilane by hydrogenating silicon tetrachloride |
CN101528598B (zh) * | 2006-10-25 | 2012-06-13 | 瓦克化学股份公司 | 生产三氯硅烷的方法 |
CN102815709A (zh) * | 2012-08-10 | 2012-12-12 | 中国恩菲工程技术有限公司 | 一种四氯化硅冷氢化制备三氯氢硅的方法 |
CN102814181A (zh) * | 2012-08-10 | 2012-12-12 | 中国恩菲工程技术有限公司 | 一种用于四氯化硅冷氢化制备三氯氢硅的催化剂及其制备方法 |
CN103055867A (zh) * | 2011-10-21 | 2013-04-24 | 中国石油化工股份有限公司 | 一种镍催化剂、制备方法及其应用 |
-
2002
- 2002-02-08 CN CNB021045240A patent/CN1183034C/zh not_active Expired - Lifetime
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1946637B (zh) * | 2004-04-23 | 2010-06-16 | 德古萨公司 | 通过四氯化硅的催化加氢脱卤制备三氯甲硅烷的方法 |
CN1946636B (zh) * | 2004-04-23 | 2011-01-26 | 赢创德固赛有限责任公司 | 通过四氯化硅的催化加氢脱卤制备三氯甲硅烷的工艺 |
CN101528598B (zh) * | 2006-10-25 | 2012-06-13 | 瓦克化学股份公司 | 生产三氯硅烷的方法 |
WO2009018713A1 (fr) | 2007-08-08 | 2009-02-12 | Xuzhou Southeast Polysilicon R & D Ltd | Procédés et dispositifs améliorés servant à préparer trichloro-hydrosilicium et polysilicium |
CN101700886B (zh) * | 2009-11-30 | 2011-08-03 | 乐山乐电天威硅业科技有限责任公司 | 由四氯化硅制取三氯氢硅的方法 |
CN101817528B (zh) * | 2010-03-26 | 2011-09-14 | 成都鸿宝新能源科技有限公司 | SiCl4氢化生产SiHCl3的节能降耗循环系统及工艺 |
CN101817528A (zh) * | 2010-03-26 | 2010-09-01 | 成都鸿宝新能源科技有限公司 | SiCl4氢化生产SiHCl3的节能降耗循环工艺及系统 |
WO2011150642A1 (en) * | 2010-05-31 | 2011-12-08 | Byd Company Limited | Fluidized bed reactor and device for preparing trichlorosilane by hydrogenating silicon tetrachloride |
CN102114426A (zh) * | 2010-12-23 | 2011-07-06 | 内蒙古工业大学 | 四氯硅烷冷氢化专用催化剂及其制备方法 |
CN102114426B (zh) * | 2010-12-23 | 2012-11-21 | 内蒙古工业大学 | 四氯硅烷冷氢化专用催化剂及其制备方法 |
CN103055867A (zh) * | 2011-10-21 | 2013-04-24 | 中国石油化工股份有限公司 | 一种镍催化剂、制备方法及其应用 |
CN102815709A (zh) * | 2012-08-10 | 2012-12-12 | 中国恩菲工程技术有限公司 | 一种四氯化硅冷氢化制备三氯氢硅的方法 |
CN102814181A (zh) * | 2012-08-10 | 2012-12-12 | 中国恩菲工程技术有限公司 | 一种用于四氯化硅冷氢化制备三氯氢硅的催化剂及其制备方法 |
CN102815709B (zh) * | 2012-08-10 | 2014-08-06 | 中国恩菲工程技术有限公司 | 一种四氯化硅冷氢化制备三氯氢硅的方法 |
CN102814181B (zh) * | 2012-08-10 | 2015-04-01 | 中国恩菲工程技术有限公司 | 一种用于四氯化硅冷氢化制备三氯氢硅的催化剂及其制备方法 |
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CN1183034C (zh) | 2005-01-05 |
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C14 | Grant of patent or utility model | ||
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Owner name: CHINA YOUSE ENGINEERING CO., LTD. Free format text: FORMER NAME: CHINA COLORED METAL DESIGN RESEARCH INSTITUTE |
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CP03 | Change of name, title or address |
Address after: No. 12 Fuxing Road, Beijing Patentee after: China Nonferrous Metals Engineering Company Limited Address before: No. 12 Fuxing Road, Beijing Patentee before: China Non-ferrous Engineering Design General Inst. |
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Luoyang Zhonggui High-tech Co., Ltd. Assignor: China Nonferrous Metals Engineering Company Limited Contract record no.: 2011410000011 Denomination of invention: Silicon tetrachloride hydrogenating process of producing trichloro hydrosilicon Granted publication date: 20050105 License type: Exclusive License Open date: 20030820 Record date: 20110322 |
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Inventor after: Shen Zuxiang Inventor after: Xie Donghui Inventor after: Wu Keli Inventor after: Yan Dazhou Inventor after: Liu Jianjun Inventor after: Tang Chuanbin Inventor after: Xiao Ronghui Inventor after: Wan Ye Inventor after: Yang Yongliang Inventor after: Wang Shaofen Inventor before: Shen Zuxiang Inventor before: Wu Keli Inventor before: Yan Dazhou Inventor before: Liu Jianjun Inventor before: Tang Chuanbin |
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Free format text: CORRECT: INVENTOR; FROM: SHEN ZUXIANG WU KELI YAN DAZHOU LIU JIANJUN TANG ZHUANBIN TO: SHEN ZUXIANG WU KELI YAN DAZHOU LIU JIANJUN TANG ZHUANBIN XIAO RONGHUI WAN YE YANG YONGLIANG WANG SHAOFEN XIE DONGHUI |
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C53 | Correction of patent of invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Yan Dazhou Inventor after: Yang Yongliang Inventor after: Xie Donghui Inventor after: Liu Jianjun Inventor after: Wu Keli Inventor after: Tang Chuanbin Inventor after: Xiao Ronghui Inventor after: Shen Zuxiang Inventor after: Lu Zhifang Inventor after: Zong Shaoxing Inventor after: Wang Shaofen Inventor after: Wan Ye Inventor before: Shen Zuxiang Inventor before: Xie Donghui Inventor before: Wu Keli Inventor before: Yan Dazhou Inventor before: Liu Jianjun Inventor before: Tang Chuanbin Inventor before: Xiao Ronghui Inventor before: Wan Ye Inventor before: Yang Yongliang Inventor before: Wang Shaofen |
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Free format text: CORRECT: INVENTOR; FROM: SHEN ZUXIANG WU KELI YAN DAZHOU LIU JIANJUN TANG CHUANBIN XIAO RONGHUI WAN YE YANG YONGLIANG WANG SHAOFEN XIE DONGHUI TO: YAN DAZHOU WU KELI TANG CHUANBIN XIAO RONGHUI SHEN ZUXIANG LU ZHIFANG ZONG SHAOXING WANG SHAOFEN WAN YE YANG YONGLIANG XIE DONGHUI LIU JIANJUN |
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Granted publication date: 20050105 |