CN111252771B - 提纯三氯氢硅的方法及系统 - Google Patents
提纯三氯氢硅的方法及系统 Download PDFInfo
- Publication number
- CN111252771B CN111252771B CN202010120663.2A CN202010120663A CN111252771B CN 111252771 B CN111252771 B CN 111252771B CN 202010120663 A CN202010120663 A CN 202010120663A CN 111252771 B CN111252771 B CN 111252771B
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- CN
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- Prior art keywords
- trichlorosilane
- microspheres
- metal oxide
- removal
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 title claims abstract description 204
- 239000005052 trichlorosilane Substances 0.000 title claims abstract description 201
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000004005 microsphere Substances 0.000 claims abstract description 205
- 239000012535 impurity Substances 0.000 claims abstract description 165
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 127
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 127
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 67
- 239000012670 alkaline solution Substances 0.000 claims abstract description 40
- 239000000047 product Substances 0.000 claims abstract description 23
- 238000004381 surface treatment Methods 0.000 claims abstract description 20
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 9
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims description 92
- 239000012264 purified product Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 16
- 238000000746 purification Methods 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 11
- 238000000066 reactive distillation Methods 0.000 claims description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 10
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 10
- 238000010992 reflux Methods 0.000 claims description 10
- 238000012856 packing Methods 0.000 claims description 7
- 239000012043 crude product Substances 0.000 claims description 6
- 238000005984 hydrogenation reaction Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 5
- 238000003786 synthesis reaction Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 12
- 239000000543 intermediate Substances 0.000 description 21
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 20
- 239000005416 organic matter Substances 0.000 description 20
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 11
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 11
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000009835 boiling Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 238000004821 distillation Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000006356 dehydrogenation reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011863 silicon-based powder Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 150000008043 acidic salts Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000012266 salt solution Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010120663.2A CN111252771B (zh) | 2020-02-26 | 2020-02-26 | 提纯三氯氢硅的方法及系统 |
Applications Claiming Priority (1)
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CN202010120663.2A CN111252771B (zh) | 2020-02-26 | 2020-02-26 | 提纯三氯氢硅的方法及系统 |
Publications (2)
Publication Number | Publication Date |
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CN111252771A CN111252771A (zh) | 2020-06-09 |
CN111252771B true CN111252771B (zh) | 2023-04-07 |
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CN202010120663.2A Active CN111252771B (zh) | 2020-02-26 | 2020-02-26 | 提纯三氯氢硅的方法及系统 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113233468B (zh) * | 2021-07-09 | 2021-09-17 | 江苏鑫华半导体材料科技有限公司 | 一种三氯氢硅质量检测方法、提纯控制方法及装置 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4082860A (en) * | 1975-03-05 | 1978-04-04 | Edward Curran Engineering Limited | Electrostatic deposition of fine vitreous enamel |
US5281440A (en) * | 1992-04-01 | 1994-01-25 | The University Of Toledo | Method of depositing a metal film on a silyl hydride containing surface of a solid and products produced thereby |
KR20030059530A (ko) * | 2001-12-29 | 2003-07-10 | 주식회사 금강고려화학 | 가용성 실록산 수지의 제조방법 |
CN102009984A (zh) * | 2010-10-26 | 2011-04-13 | 江苏中能硅业科技发展有限公司 | 利用氯硅烷制备分子筛的方法 |
CN102557042A (zh) * | 2010-12-24 | 2012-07-11 | 北京有色金属研究总院 | 一种四氯化硅中三氯氢硅杂质的去除方法 |
CN102675691A (zh) * | 2012-06-05 | 2012-09-19 | 楼芳彪 | 一种有机硅改性氢氧化铝阻燃剂及其制备方法 |
CN102807223A (zh) * | 2012-08-17 | 2012-12-05 | 中国天辰工程有限公司 | 一种三氯氢硅精制方法 |
CN209093326U (zh) * | 2018-10-12 | 2019-07-12 | 四川绿源聚能环保科技有限责任公司 | 一种有机硅生产系统 |
CN209093380U (zh) * | 2018-10-12 | 2019-07-12 | 四川绿源聚能环保科技有限责任公司 | 一种用于连续生产有机硅的反应塔 |
-
2020
- 2020-02-26 CN CN202010120663.2A patent/CN111252771B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4082860A (en) * | 1975-03-05 | 1978-04-04 | Edward Curran Engineering Limited | Electrostatic deposition of fine vitreous enamel |
US5281440A (en) * | 1992-04-01 | 1994-01-25 | The University Of Toledo | Method of depositing a metal film on a silyl hydride containing surface of a solid and products produced thereby |
KR20030059530A (ko) * | 2001-12-29 | 2003-07-10 | 주식회사 금강고려화학 | 가용성 실록산 수지의 제조방법 |
CN102009984A (zh) * | 2010-10-26 | 2011-04-13 | 江苏中能硅业科技发展有限公司 | 利用氯硅烷制备分子筛的方法 |
CN102557042A (zh) * | 2010-12-24 | 2012-07-11 | 北京有色金属研究总院 | 一种四氯化硅中三氯氢硅杂质的去除方法 |
CN102675691A (zh) * | 2012-06-05 | 2012-09-19 | 楼芳彪 | 一种有机硅改性氢氧化铝阻燃剂及其制备方法 |
CN102807223A (zh) * | 2012-08-17 | 2012-12-05 | 中国天辰工程有限公司 | 一种三氯氢硅精制方法 |
CN209093326U (zh) * | 2018-10-12 | 2019-07-12 | 四川绿源聚能环保科技有限责任公司 | 一种有机硅生产系统 |
CN209093380U (zh) * | 2018-10-12 | 2019-07-12 | 四川绿源聚能环保科技有限责任公司 | 一种用于连续生产有机硅的反应塔 |
Non-Patent Citations (1)
Title |
---|
钱浩等."高效除三氯氢硅中痕量硼、磷工艺研究进展".《化学工业与工程》.2018,第35卷(第2期),第42-48页. * |
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CN111252771A (zh) | 2020-06-09 |
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Address after: 221004 No.66, Yangshan Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Jiangsu Xinhua Semiconductor Technology Co.,Ltd. Address before: 221004 No.66, Yangshan Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant before: JIANGSU XINHUA SEMICONDUCTOR MATERIALS TECHNOLOGY CO.,LTD. |
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EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20200609 Assignee: Yangzhou Xinhua Semiconductor Technology Co.,Ltd. Assignor: Jiangsu Xinhua Semiconductor Technology Co.,Ltd. Contract record no.: X2024980007191 Denomination of invention: Method and system for purifying trichlorosilane Granted publication date: 20230407 License type: Common License Record date: 20240614 |