CN118235236A - 氧化膜的膜厚评价方法及带有氧化膜的硅基板的制造方法 - Google Patents
氧化膜的膜厚评价方法及带有氧化膜的硅基板的制造方法 Download PDFInfo
- Publication number
- CN118235236A CN118235236A CN202280073945.9A CN202280073945A CN118235236A CN 118235236 A CN118235236 A CN 118235236A CN 202280073945 A CN202280073945 A CN 202280073945A CN 118235236 A CN118235236 A CN 118235236A
- Authority
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- China
- Prior art keywords
- film thickness
- oxide film
- silicon substrate
- film
- evaluated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 282
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 250
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 250
- 239000010703 silicon Substances 0.000 title claims abstract description 250
- 238000000034 method Methods 0.000 title claims abstract description 77
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 230000003746 surface roughness Effects 0.000 claims abstract description 122
- 238000005259 measurement Methods 0.000 claims abstract description 43
- 238000011156 evaluation Methods 0.000 claims abstract description 33
- 230000003595 spectral effect Effects 0.000 claims abstract description 29
- 238000004140 cleaning Methods 0.000 claims description 187
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 50
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 19
- 238000007254 oxidation reaction Methods 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000001228 spectrum Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 34
- 238000005498 polishing Methods 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- 238000011282 treatment Methods 0.000 description 11
- 238000007788 roughening Methods 0.000 description 10
- 230000008719 thickening Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 238000005406 washing Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 238000010183 spectrum analysis Methods 0.000 description 4
- 238000000089 atomic force micrograph Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005661 hydrophobic surface Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005102 attenuated total reflection Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
- G01J4/04—Polarimeters using electric detection means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Formation Of Insulating Films (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-182075 | 2021-11-08 | ||
| JP2021182075A JP2023069889A (ja) | 2021-11-08 | 2021-11-08 | 酸化膜の膜厚評価方法及び酸化膜付きシリコン基板の製造方法 |
| PCT/JP2022/038112 WO2023079919A1 (ja) | 2021-11-08 | 2022-10-12 | 酸化膜の膜厚評価方法及び酸化膜付きシリコン基板の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118235236A true CN118235236A (zh) | 2024-06-21 |
Family
ID=86241352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280073945.9A Pending CN118235236A (zh) | 2021-11-08 | 2022-10-12 | 氧化膜的膜厚评价方法及带有氧化膜的硅基板的制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2023069889A (ja) |
| CN (1) | CN118235236A (ja) |
| TW (1) | TW202339035A (ja) |
| WO (1) | WO2023079919A1 (ja) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3536618B2 (ja) * | 1997-09-30 | 2004-06-14 | 信越半導体株式会社 | シリコンウエーハの表面粗さを改善する方法および表面粗さを改善したシリコンウエーハ |
| JP4162211B2 (ja) * | 2002-09-05 | 2008-10-08 | コバレントマテリアル株式会社 | シリコンウエハの洗浄方法および洗浄されたシリコンウエハ |
| JP2005109149A (ja) * | 2003-09-30 | 2005-04-21 | Toshiba Ceramics Co Ltd | 半導体ウエハの製造方法 |
| JP5272496B2 (ja) * | 2008-04-25 | 2013-08-28 | 信越半導体株式会社 | シリコンウェーハの酸化膜形成方法 |
| JP5071304B2 (ja) * | 2008-08-22 | 2012-11-14 | 信越半導体株式会社 | 半導体ウエーハ及び半導体ウエーハの製造方法並びに半導体ウエーハの評価方法 |
| KR102014926B1 (ko) * | 2017-10-31 | 2019-08-27 | 에스케이실트론 주식회사 | 실리콘 웨이퍼의 산화물층의 두께 예측 방법 |
| JP6791453B1 (ja) * | 2020-05-08 | 2020-11-25 | 信越半導体株式会社 | 半導体基板の熱酸化膜形成方法 |
-
2021
- 2021-11-08 JP JP2021182075A patent/JP2023069889A/ja active Pending
-
2022
- 2022-10-12 WO PCT/JP2022/038112 patent/WO2023079919A1/ja unknown
- 2022-10-12 CN CN202280073945.9A patent/CN118235236A/zh active Pending
- 2022-10-17 TW TW111139227A patent/TW202339035A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202339035A (zh) | 2023-10-01 |
| JP2023069889A (ja) | 2023-05-18 |
| WO2023079919A1 (ja) | 2023-05-11 |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination |