CN1179821C - 具有独立限位环和多区域压力控制结构的气动隔膜式抛光头及其使用方法 - Google Patents

具有独立限位环和多区域压力控制结构的气动隔膜式抛光头及其使用方法 Download PDF

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Publication number
CN1179821C
CN1179821C CNB018121713A CN01812171A CN1179821C CN 1179821 C CN1179821 C CN 1179821C CN B018121713 A CNB018121713 A CN B018121713A CN 01812171 A CN01812171 A CN 01812171A CN 1179821 C CN1179821 C CN 1179821C
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CN
China
Prior art keywords
support
pressure
diaphragm
substrate
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB018121713A
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English (en)
Chinese (zh)
Other versions
CN1440321A (zh
Inventor
|原治郎
梶原治郎
德・S・莫洛尼
格拉尔德·S·莫洛尼
A・汉森
王惠明
德多・雷耶斯
戴维·A·汉森
亚历松德多·雷耶斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MULTI PLANAR TECHNOLOGIES Inc
Original Assignee
MULTI PLANAR TECHNOLOGIES Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/570,370 external-priority patent/US6506105B1/en
Priority claimed from US09/570,369 external-priority patent/US6558232B1/en
Application filed by MULTI PLANAR TECHNOLOGIES Inc filed Critical MULTI PLANAR TECHNOLOGIES Inc
Publication of CN1440321A publication Critical patent/CN1440321A/zh
Application granted granted Critical
Publication of CN1179821C publication Critical patent/CN1179821C/zh
Anticipated expiration legal-status Critical
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • B24B37/32Retaining rings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNB018121713A 2000-05-12 2001-05-11 具有独立限位环和多区域压力控制结构的气动隔膜式抛光头及其使用方法 Expired - Fee Related CN1179821C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US20421200P 2000-05-12 2000-05-12
US09/570,369 2000-05-12
US09/570,370 2000-05-12
US09/570,370 US6506105B1 (en) 2000-05-12 2000-05-12 System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control
US09/570,369 US6558232B1 (en) 2000-05-12 2000-05-12 System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control
US60/204,212 2000-05-12

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100881994A Division CN100433269C (zh) 2000-05-12 2001-05-11 抛光装置以及与其一起使用的基片托架

Publications (2)

Publication Number Publication Date
CN1440321A CN1440321A (zh) 2003-09-03
CN1179821C true CN1179821C (zh) 2004-12-15

Family

ID=27394636

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2004100881994A Expired - Fee Related CN100433269C (zh) 2000-05-12 2001-05-11 抛光装置以及与其一起使用的基片托架
CNB018121713A Expired - Fee Related CN1179821C (zh) 2000-05-12 2001-05-11 具有独立限位环和多区域压力控制结构的气动隔膜式抛光头及其使用方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CNB2004100881994A Expired - Fee Related CN100433269C (zh) 2000-05-12 2001-05-11 抛光装置以及与其一起使用的基片托架

Country Status (6)

Country Link
EP (1) EP1284840A2 (ja)
JP (1) JP2003533359A (ja)
KR (1) KR100811172B1 (ja)
CN (2) CN100433269C (ja)
AU (1) AU2001259745A1 (ja)
WO (1) WO2001087541A2 (ja)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6506105B1 (en) 2000-05-12 2003-01-14 Multi-Planar Technologies, Inc. System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control
US6558232B1 (en) 2000-05-12 2003-05-06 Multi-Planar Technologies, Inc. System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control
US6540590B1 (en) 2000-08-31 2003-04-01 Multi-Planar Technologies, Inc. Chemical mechanical polishing apparatus and method having a rotating retaining ring
TWI246448B (en) * 2000-08-31 2006-01-01 Multi Planar Technologies Inc Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby
KR100470227B1 (ko) * 2001-06-07 2005-02-05 두산디앤디 주식회사 화학기계적 연마장치의 캐리어 헤드
JP4353673B2 (ja) * 2002-04-18 2009-10-28 株式会社荏原製作所 ポリッシング方法
CN100400236C (zh) 2002-09-27 2008-07-09 小松电子金属股份有限公司 一种研磨装置和晶片制造方法
TWI238754B (en) * 2002-11-07 2005-09-01 Ebara Tech Inc Vertically adjustable chemical mechanical polishing head having a pivot mechanism and method for use thereof
EP2797109B1 (en) * 2004-11-01 2018-02-28 Ebara Corporation Polishing apparatus
US20080032603A1 (en) * 2006-08-03 2008-02-07 3M Innovative Properties Company Sanding tool
JP5464820B2 (ja) * 2007-10-29 2014-04-09 株式会社荏原製作所 研磨装置
KR101617716B1 (ko) 2008-03-25 2016-05-03 어플라이드 머티어리얼스, 인코포레이티드 개량된 캐리어 헤드 멤브레인
DE102009030298B4 (de) * 2009-06-24 2012-07-12 Siltronic Ag Verfahren zur lokalen Politur einer Halbleiterscheibe
US20120021673A1 (en) * 2010-07-20 2012-01-26 Applied Materials, Inc. Substrate holder to reduce substrate edge stress during chemical mechanical polishing
CN102172887B (zh) * 2011-02-16 2013-01-30 清华大学 抛光头
KR101196652B1 (ko) * 2011-05-31 2012-11-02 주식회사 케이씨텍 캐리어 헤드의 멤브레인 결합체 및 이를 구비한 캐리어 헤드
CN102922411B (zh) * 2011-08-10 2015-12-16 无锡华润上华科技有限公司 防止晶片滑片的化学机械研磨方法
WO2013112764A1 (en) * 2012-01-25 2013-08-01 Applied Materials, Inc. Retaining ring monitoring and control of pressure
US9050700B2 (en) * 2012-01-27 2015-06-09 Applied Materials, Inc. Methods and apparatus for an improved polishing head retaining ring
JP5807580B2 (ja) * 2012-02-15 2015-11-10 信越半導体株式会社 研磨ヘッド及び研磨装置
KR101301001B1 (ko) * 2012-06-14 2013-08-28 에스엔유 프리시젼 주식회사 파손방지 기능을 구비한 기판처리 시스템
KR200465446Y1 (ko) 2012-09-09 2013-02-19 전용준 캐리어 헤드 하우징과 보유 링 간의 결합 상태 점검 기능을 갖는 화학 기계적 연마 장치의 캐리어 헤드
CN103817591B (zh) * 2012-11-16 2016-08-03 有研半导体材料有限公司 一种抛光机碎片处理装置
KR102191916B1 (ko) * 2013-06-26 2020-12-16 주식회사 케이씨텍 화학 기계적 연마 장치의 캐리어 헤드
CN104347467A (zh) * 2013-07-23 2015-02-11 Ap系统股份有公司 衬底固持模块和包含所述衬底固持模块的衬底处理设备
KR101494757B1 (ko) * 2013-07-23 2015-02-25 에이피시스템 주식회사 기판 지지 모듈 및 이를 구비하는 기판 처리 장치
KR101487414B1 (ko) * 2013-09-11 2015-01-29 주식회사 엘지실트론 웨이퍼의 연마 장치
JP6232297B2 (ja) 2014-01-21 2017-11-15 株式会社荏原製作所 基板保持装置および研磨装置
TWI656944B (zh) * 2014-05-14 2019-04-21 日商荏原製作所股份有限公司 研磨裝置
KR101559282B1 (ko) 2014-05-19 2015-10-19 주식회사 티에스시 웨이퍼연마장치용 멤브레인 및 이를 포함하는 화학기계식 웨이퍼연마장치
US9566687B2 (en) * 2014-10-13 2017-02-14 Sunedison Semiconductor Limited (Uen201334164H) Center flex single side polishing head having recess and cap
CN105856056B (zh) * 2015-01-19 2018-03-02 大族激光科技产业集团股份有限公司 一种异形面自动抛光装置
CN105058225A (zh) * 2015-07-07 2015-11-18 武汉新芯集成电路制造有限公司 研磨垫固定装置及化学机械研磨装置
US9744640B2 (en) * 2015-10-16 2017-08-29 Applied Materials, Inc. Corrosion resistant retaining rings
CN105397574B (zh) * 2015-12-09 2017-08-25 浙江工业大学 一种加工间隙可调的液动压悬浮抛光装置
CN105538045B (zh) * 2015-12-09 2018-06-26 浙江工业大学 基于自适应和固定加工间隙的液动压悬浮抛光方法及装置
CN105479325B (zh) * 2015-12-30 2018-04-17 天通吉成机器技术有限公司 一种适用于大型单面研磨抛光设备的分区加压装置及方法
US9873179B2 (en) * 2016-01-20 2018-01-23 Applied Materials, Inc. Carrier for small pad for chemical mechanical polishing
US10654216B2 (en) * 2016-03-30 2020-05-19 Canon Kabushiki Kaisha System and methods for nanoimprint lithography
TWI568537B (zh) * 2016-09-08 2017-02-01 Vibration grinding machine structure
TWI572444B (zh) * 2016-09-08 2017-03-01 Vibration grinding machine structure
JP7162000B2 (ja) * 2017-03-06 2022-10-27 アプライド マテリアルズ インコーポレイテッド Cmp位置特定研磨(lsp)用に設計された螺旋及び同心運動
JP6986930B2 (ja) * 2017-11-07 2021-12-22 株式会社荏原製作所 基板研磨装置および研磨方法
CN108145586B (zh) * 2018-01-03 2019-10-11 京东方科技集团股份有限公司 抛光设备及抛光方法
CN109202697A (zh) * 2018-11-20 2019-01-15 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) 抛光头、抛光设备以及抛光头的使用方法
KR20200070825A (ko) * 2018-12-10 2020-06-18 삼성전자주식회사 연마 균일도를 제어할 수 있는 화학 기계적 연마 장치
CN110142689B (zh) * 2019-04-17 2021-09-14 杭州众硅电子科技有限公司 一种晶圆装载支架、晶圆装载系统及晶圆装片方法
CN110802507A (zh) * 2019-11-11 2020-02-18 上海华力微电子有限公司 研磨头和化学机械研磨设备
CN111496658B (zh) * 2020-03-13 2021-06-04 郑玲佳 一种适应性强的扫光机
CN111496598B (zh) * 2020-04-24 2021-08-24 广东博智林机器人有限公司 一种平面打磨装置和平面打磨机器人
CN111571444A (zh) * 2020-05-15 2020-08-25 中国科学院微电子研究所 研磨垫修整装置
US11890715B2 (en) 2020-06-24 2024-02-06 Applied Materials, Inc. Polishing carrier head with piezoelectric pressure control
CN111823130A (zh) * 2020-07-17 2020-10-27 中国科学院微电子研究所 一种抛光头及抛光装置
CN111922888B (zh) * 2020-08-11 2022-04-29 西安奕斯伟材料科技有限公司 边缘抛光装置和抛光方法
US20220143779A1 (en) * 2020-11-10 2022-05-12 Applied Materials, Inc. Polishing head with local wafer pressure
CN114505782B (zh) * 2020-11-17 2023-08-04 长鑫存储技术有限公司 固定装置及检测系统
CN112605848A (zh) * 2020-11-29 2021-04-06 厦门理工学院 电磁式重心可调抛光盘机构及抛光方法
CN112792725B (zh) * 2021-02-03 2022-09-30 华海清科股份有限公司 一种用于化学机械抛光的柔性膜、承载头及抛光设备
KR102650422B1 (ko) * 2021-03-17 2024-03-22 미크로 기켄 가부시키가이샤 연마 헤드 및 연마 처리 장치
CN113290426B (zh) * 2021-04-15 2022-10-21 金华博蓝特新材料有限公司 提高晶片抛光厚度均匀性的方法
CN113878488B (zh) * 2021-10-18 2022-09-06 华海清科(北京)科技有限公司 一种化学机械抛光头和抛光系统
CN114310652A (zh) * 2021-12-30 2022-04-12 金陵科技学院 一种软脆材料柔性研磨装置
CN114700871B (zh) * 2022-03-11 2023-11-24 上海致领半导体科技发展有限公司 一种第三代半导体化学机械抛光装置
CN115091359B (zh) * 2022-05-26 2023-09-05 浙江晶盛机电股份有限公司 抛光载体
CN115008342B (zh) * 2022-06-15 2023-08-25 安徽禾臣新材料有限公司 一种晶片抛光用防崩角的无蜡垫及其生产工艺
CN115431176B (zh) * 2022-11-08 2023-01-31 烟台环球机床装备股份有限公司 一种抛光机床用抛光压力调节装置
CN115816298A (zh) * 2022-12-29 2023-03-21 西安奕斯伟材料科技有限公司 定盘、抛光设备和抛光方法
CN116372786B (zh) * 2023-06-05 2023-08-18 北京特思迪半导体设备有限公司 一种晶圆抛光设备
CN116442103B (zh) * 2023-06-13 2023-08-29 深圳市鲁光电子科技有限公司 一种第三代半导体精密加工装置
CN117245542B (zh) * 2023-11-17 2024-01-23 苏州博宏源机械制造有限公司 晶圆双面抛光设备及工艺

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0169932B1 (de) * 1984-08-03 1987-04-22 Wilhelm Loh Wetzlar Optikmaschinen GmbH & Co. KG Vorrichtung zum Halten von empfindlichen Werkstücken, insbesondere von optischen Linsen und anderen optischen Bauelementen
US4918869A (en) * 1987-10-28 1990-04-24 Fujikoshi Machinery Corporation Method for lapping a wafer material and an apparatus therefor
JP3311116B2 (ja) * 1993-10-28 2002-08-05 株式会社東芝 半導体製造装置
US5820448A (en) * 1993-12-27 1998-10-13 Applied Materials, Inc. Carrier head with a layer of conformable material for a chemical mechanical polishing system
US5738574A (en) * 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
JP3552845B2 (ja) * 1996-04-25 2004-08-11 株式会社ルネサステクノロジ 半導体装置の製造方法
US6183354B1 (en) * 1996-11-08 2001-02-06 Applied Materials, Inc. Carrier head with a flexible membrane for a chemical mechanical polishing system
US5941758A (en) * 1996-11-13 1999-08-24 Intel Corporation Method and apparatus for chemical-mechanical polishing
DE19651761A1 (de) * 1996-12-12 1998-06-18 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben
US6056632A (en) * 1997-02-13 2000-05-02 Speedfam-Ipec Corp. Semiconductor wafer polishing apparatus with a variable polishing force wafer carrier head
TW431942B (en) * 1997-04-04 2001-05-01 Tokyo Seimitsu Co Ltd Polishing device
US5957751A (en) * 1997-05-23 1999-09-28 Applied Materials, Inc. Carrier head with a substrate detection mechanism for a chemical mechanical polishing system
US6107203A (en) * 1997-11-03 2000-08-22 Motorola, Inc. Chemical mechanical polishing system and method therefor
FR2778129B1 (fr) * 1998-05-04 2000-07-21 St Microelectronics Sa Disque support de membrane d'une machine de polissage et procede de fonctionnement d'une telle machine
US6251215B1 (en) * 1998-06-03 2001-06-26 Applied Materials, Inc. Carrier head with a multilayer retaining ring for chemical mechanical polishing
US6422927B1 (en) * 1998-12-30 2002-07-23 Applied Materials, Inc. Carrier head with controllable pressure and loading area for chemical mechanical polishing
US6093089A (en) * 1999-01-25 2000-07-25 United Microelectronics Corp. Apparatus for controlling uniformity of polished material
DE19941903A1 (de) * 1999-09-02 2001-03-15 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Polieren einer Halbleiterscheibe

Also Published As

Publication number Publication date
EP1284840A2 (en) 2003-02-26
KR100811172B1 (ko) 2008-03-10
CN1440321A (zh) 2003-09-03
AU2001259745A1 (en) 2001-11-26
KR20030010621A (ko) 2003-02-05
WO2001087541A3 (en) 2002-03-28
CN1638057A (zh) 2005-07-13
CN100433269C (zh) 2008-11-12
JP2003533359A (ja) 2003-11-11
WO2001087541A2 (en) 2001-11-22

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