JP7162000B2 - Cmp位置特定研磨(lsp)用に設計された螺旋及び同心運動 - Google Patents
Cmp位置特定研磨(lsp)用に設計された螺旋及び同心運動 Download PDFInfo
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- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
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- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B24B13/00—Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
- B24B13/005—Blocking means, chucks or the like; Alignment devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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Description
Claims (17)
- 基板を研磨する方法であって、
研磨システムの回転可能なチャック上に基板を位置決めすることであって、当該研磨システムは前記回転可能なチャックと、支持アームと、当該支持アームに連結された研磨ヘッドとを備え、前記研磨ヘッドは、
支持部材と、
前記支持部材との間での相対的な側方運動を可能とする一方で相対的な回転運動を防ぐように、前記支持部材に連結された研磨ヘッドハウジングと、
前記支持部材と前記研磨ヘッドハウジングの間の前記相対的な側方運動を提供するシャフトと、
前記基板の表面積未満の接触部分表面積を有する研磨パッドアセンブリと、を備え、
前記研磨ヘッドハウジングは、上側ハウジングと、前記上側ハウジングに連結された下側ハウジングと、を備え、可撓性の薄膜が前記上側ハウジングと前記下側ハウジングの間に配置され、前記研磨パッドアセンブリは、前記下側ハウジング内の開口から突出するように前記可撓性の薄膜に連結されている、基板を位置決めすること、
前記基板上の第1の半径において前記基板上に前記研磨パッドアセンブリを位置決めすること、
第1の研磨滞留時間、第1の研磨ダウンフォース、及び第1の研磨スピードを含む第1の研磨レシピを使用して前記第1の半径において前記基板を研磨すること、
前記研磨パッドが前記基板上で前記第1の半径から第2の半径へ横に移動するような位置決め動作を使用して前記支持アームを動かすこと、並びに
第2の研磨滞留時間、第2の研磨ダウンフォース、及び第2の研磨スピードを含む第2の研磨レシピを使用して前記第2の半径において前記基板を研磨すること、
を含む、方法。 - 前記第1の研磨速度が、前記研磨ヘッド内に配置された前記シャフトの回転速度を含む、請求項1に記載の方法。
- 前記位置決め動作が、前記支持アームの端部を貫通して配置された垂直軸の周りで前記支持アームを回転させることを含む、請求項1に記載の方法。
- 前記研磨パッドに研磨動作を提供することを更に含み、前記研磨動作が、軌道動作、円弧動作、円形動作、振動動作、回転動作、又はそれらの組み合わせを含む、請求項2に記載の方法。
- 前記チャックの相対運動と前記支持アームの前記位置決め動作とが前記基板上で螺旋形状研磨経路を形成するように、前記チャックの中心軸の周りで前記チャックを回転させることを更に含む、請求項3に記載の方法。
- 前記研磨レシピに関する前記シャフトの回転速度が約1000rpmから約5000rpmの間である、請求項1に記載の方法。
- 前記接触部分表面積が、前記基板の前記表面積の約1%未満である、請求項1に記載の方法。
- 基板を研磨する方法であって、
研磨システムの回転可能なチャック上に基板を位置決めすることであって、当該研磨システムは前記回転可能なチャックと、支持アームと、当該支持アームに連結された研磨ヘッドとを備え、前記研磨ヘッドは、
支持部材と、
前記支持部材との間での相対的な軌道運動又は振動運動を可能とする一方で、研磨ヘッドハウジングが前記支持部材に対して回転するのを防ぐように、前記支持部材に連結された研磨ヘッドハウジングと、
前記支持部材と前記研磨ヘッドハウジングの間の前記相対的な軌道運動又は振動運動を提供するシャフトと、
前記基板の表面積未満の表面積を有する接触部分と支持部分を備える研磨パッドアセンブリと
を備え、
前記研磨ヘッドハウジングは、上側ハウジングと、前記上側ハウジングに連結された下側ハウジングと、を備え、可撓性の薄膜が前記上側ハウジングと前記下側ハウジングの間に配置され、前記研磨パッドアセンブリは、前記下側ハウジング内の開口から突出するように前記可撓性の薄膜に連結されている、基板を位置決めすること、
前記研磨パッドアセンブリの前記接触部分を前記基板に対して付勢すること、
第1の研磨滞留時間、第1の研磨ダウンフォース、及び第1の研磨スピードを含む第1の研磨レシピを使用して前記基板の表面より小さい前記基板の第1のエリア表面を研磨すること、
前記研磨パッドが前記基板の前記第1のエリア表面から前記基板の前記表面より小さい前記基板の第2のエリア表面へ横に移動するように、前記基板と前記支持アームとを同時に動かすこと、並びに
第2の研磨滞留時間、第2の研磨ダウンフォース、及び第2の研磨スピードを含む第2の研磨レシピを使用して前記基板の前記第2のエリア表面を研磨すること、
を含む、方法。 - 前記基板の前記第1のエリア表面と前記基板の前記第2のエリア表面を研磨することが、研磨動作を使用することを含む、請求項8に記載の方法。
- 前記支持アームを動かすことが、前記支持アームの端部を貫通して配置された垂直軸の周りで前記支持アームを回転させることを含む、請求項8に記載の方法。
- 前記基板を動かすことが、前記研磨パッドが前記基板上で螺旋形状経路を横に移動するように、前記基板の中心の周りで前記基板を回転させることを含む、請求項8に記載の方法。
- 前記研磨動作が、前記研磨ヘッド内に配置されたアクチュエータアセンブリによって提供される、請求項9に記載の方法。
- 前記研磨動作が、軌道動作、円弧動作、円形動作、振動動作、回転動作、又はそれらの組み合わせを含む、請求項9に記載の方法。
- 基板を研磨する方法であって、
支持アームによって支持され且つ基板の表面積未満の接触部分表面積を有する研磨パッドを、前記基板の表面に対して付勢することであって、前記研磨パッドと前記基板の表面の間の相対運動は研磨ヘッドアセンブリによってもたらされ、前記研磨ヘッドアセンブリは、
支持部材と、
前記支持部材に対して回転するのを防ぐように、前記支持部材に連結された研磨ヘッドハウジングであって、前記研磨ヘッドハウジングは、上側ハウジングと、前記上側ハウジングに連結された下側ハウジングと、を備え、可撓性の薄膜が前記上側ハウジングと前記下側ハウジングの間に配置されている、研磨ヘッドハウジングと、
前記支持部材と前記研磨ヘッドハウジングの間の相対的な側方運動を提供するシャフトと、
前記下側ハウジング内の開口から突出するように前記可撓性の薄膜に連結された研磨パッドアセンブリと、
を備える、前記研磨パッドを前記基板の表面に対して付勢すること、
前記研磨パッドが前記基板の前記表面の複数の半径のうちの各半径へ横に移動するように、前記基板が固定されたチャックを回転させると同時に前記支持アームを動かすこと、並びに
複数の研磨レシピであって、それぞれが前記複数の半径のそれぞれに対応する複数の研磨レシピを使用して、前記基板の前記表面を研磨すること、を含み、
前記複数の研磨レシピのそれぞれが、
研磨滞留時間、
研磨ダウンフォース、及び
研磨速度を含む、方法。 - 前記基板の前記表面を研磨することが、前記研磨パッドに研磨動作を提供することを含み、前記研磨動作が、軌道動作、円弧動作、円形動作、振動動作、回転動作、又はそれらの組み合わせを含む、請求項14に記載の方法。
- 前記研磨パッドが、前記基板上で螺旋形状経路を横に移動し、前記研磨パッドが、研磨ヘッドに連結されており、前記研磨速度が、前記研磨ヘッド内に配置されたシャフトの回転速度を含み、前記シャフトの前記回転速度が、約1000rpmと約5000rpmの間であり、前記研磨ダウンフォースが、前記研磨ヘッド内の圧縮されたガスを含む、請求項14に記載の方法。
- 前記複数の研磨レシピのうち少なくとも1つにおいて、前記シャフトの回転速度が約1000rpmと約5000rpmの間である、請求項14に記載の方法。
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CN113411486B (zh) * | 2020-03-16 | 2022-05-17 | 浙江宇视科技有限公司 | 云台摄像机控制方法、装置、云台摄像机和存储介质 |
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