CN116491127A - 摄像装置 - Google Patents

摄像装置 Download PDF

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Publication number
CN116491127A
CN116491127A CN202180079297.3A CN202180079297A CN116491127A CN 116491127 A CN116491127 A CN 116491127A CN 202180079297 A CN202180079297 A CN 202180079297A CN 116491127 A CN116491127 A CN 116491127A
Authority
CN
China
Prior art keywords
electrode
control electrode
voltage
pixel electrode
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180079297.3A
Other languages
English (en)
Chinese (zh)
Inventor
德原健富
三宅康夫
金原旭成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN116491127A publication Critical patent/CN116491127A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202180079297.3A 2020-12-15 2021-11-09 摄像装置 Pending CN116491127A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-207889 2020-12-15
JP2020207889 2020-12-15
PCT/JP2021/041249 WO2022130835A1 (ja) 2020-12-15 2021-11-09 撮像装置

Publications (1)

Publication Number Publication Date
CN116491127A true CN116491127A (zh) 2023-07-25

Family

ID=82057552

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180079297.3A Pending CN116491127A (zh) 2020-12-15 2021-11-09 摄像装置

Country Status (4)

Country Link
US (1) US12266667B2 (https=)
JP (1) JPWO2022130835A1 (https=)
CN (1) CN116491127A (https=)
WO (1) WO2022130835A1 (https=)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09331051A (ja) * 1995-06-16 1997-12-22 S I I R D Center:Kk 光電変換半導体装置
JP2008112907A (ja) * 2006-10-31 2008-05-15 Powerchip Semiconductor Corp イメージセンサー及びその製作方法
CN101647120B (zh) * 2007-03-30 2012-05-16 松下电器产业株式会社 有双重帧存储部分的ccd图像拾取装置和使用该装置的方法
JP5547717B2 (ja) 2009-04-07 2014-07-16 ローム株式会社 光電変換装置および撮像装置
JP6555512B2 (ja) * 2014-10-23 2019-08-07 パナソニックＩｐマネジメント株式会社 撮像装置および画像取得装置
US10141354B2 (en) * 2014-10-23 2018-11-27 Panasonic Intellectual Property Management Co., Ltd. Imaging device and image acquisition device
JP6808316B2 (ja) * 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
JP6926450B2 (ja) * 2016-11-22 2021-08-25 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP6808463B2 (ja) 2016-11-30 2021-01-06 キヤノン株式会社 光電変換装置および光電変換システム
JP6920652B2 (ja) 2017-02-03 2021-08-18 パナソニックＩｐマネジメント株式会社 撮像装置
JP2018152393A (ja) * 2017-03-10 2018-09-27 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP7164532B2 (ja) * 2017-08-31 2022-11-01 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
WO2019069752A1 (ja) * 2017-10-04 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子装置
JP7005331B2 (ja) * 2017-12-21 2022-01-21 キヤノン株式会社 撮像装置及び撮像システム
JP2020017688A (ja) * 2018-07-27 2020-01-30 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器

Also Published As

Publication number Publication date
JPWO2022130835A1 (https=) 2022-06-23
US12266667B2 (en) 2025-04-01
US20230299098A1 (en) 2023-09-21
WO2022130835A1 (ja) 2022-06-23

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