CN1163961C - 树脂密封的半导体器件 - Google Patents
树脂密封的半导体器件 Download PDFInfo
- Publication number
- CN1163961C CN1163961C CNB001007815A CN00100781A CN1163961C CN 1163961 C CN1163961 C CN 1163961C CN B001007815 A CNB001007815 A CN B001007815A CN 00100781 A CN00100781 A CN 00100781A CN 1163961 C CN1163961 C CN 1163961C
- Authority
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- China
- Prior art keywords
- radiator
- island
- semiconductor element
- lead
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 239000011347 resin Substances 0.000 title claims description 28
- 229920005989 resin Polymers 0.000 title claims description 28
- 239000000853 adhesive Substances 0.000 claims abstract description 21
- 230000001070 adhesive effect Effects 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 238000007789 sealing Methods 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27012/1999 | 1999-02-04 | ||
JP2701299 | 1999-02-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1264174A CN1264174A (zh) | 2000-08-23 |
CN1163961C true CN1163961C (zh) | 2004-08-25 |
Family
ID=12209200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001007815A Expired - Fee Related CN1163961C (zh) | 1999-02-04 | 2000-02-03 | 树脂密封的半导体器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6258630B1 (zh) |
KR (1) | KR100373566B1 (zh) |
CN (1) | CN1163961C (zh) |
TW (1) | TW445603B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101383330B (zh) * | 2004-11-10 | 2010-06-16 | 松下电器产业株式会社 | 树脂密封半导体器件、具有管芯垫的引线框及其制造方法 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6667541B1 (en) * | 1998-10-21 | 2003-12-23 | Matsushita Electric Industrial Co., Ltd. | Terminal land frame and method for manufacturing the same |
US6329220B1 (en) * | 1999-11-23 | 2001-12-11 | Micron Technology, Inc. | Packages for semiconductor die |
US6767140B2 (en) * | 2000-05-09 | 2004-07-27 | National Semiconductor Corporation | Ceramic optical sub-assembly for opto-electronic module utilizing LTCC (low-temperature co-fired ceramic) technology |
US6765275B1 (en) | 2000-05-09 | 2004-07-20 | National Semiconductor Corporation | Two-layer electrical substrate for optical devices |
US6707140B1 (en) * | 2000-05-09 | 2004-03-16 | National Semiconductor Corporation | Arrayable, scaleable, and stackable molded package configuration |
US6642613B1 (en) * | 2000-05-09 | 2003-11-04 | National Semiconductor Corporation | Techniques for joining an opto-electronic module to a semiconductor package |
US6624507B1 (en) | 2000-05-09 | 2003-09-23 | National Semiconductor Corporation | Miniature semiconductor package for opto-electronic devices |
US6916121B2 (en) | 2001-08-03 | 2005-07-12 | National Semiconductor Corporation | Optical sub-assembly for optoelectronic modules |
US6541310B1 (en) * | 2000-07-24 | 2003-04-01 | Siliconware Precision Industries Co., Ltd. | Method of fabricating a thin and fine ball-grid array package with embedded heat spreader |
US6559537B1 (en) * | 2000-08-31 | 2003-05-06 | Micron Technology, Inc. | Ball grid array packages with thermally conductive containers |
US6707135B2 (en) * | 2000-11-28 | 2004-03-16 | Texas Instruments Incorporated | Semiconductor leadframe for staggered board attach |
US7023705B2 (en) | 2001-08-03 | 2006-04-04 | National Semiconductor Corporation | Ceramic optical sub-assembly for optoelectronic modules |
US7269027B2 (en) * | 2001-08-03 | 2007-09-11 | National Semiconductor Corporation | Ceramic optical sub-assembly for optoelectronic modules |
US6973225B2 (en) * | 2001-09-24 | 2005-12-06 | National Semiconductor Corporation | Techniques for attaching rotated photonic devices to an optical sub-assembly in an optoelectronic package |
JP2003100986A (ja) * | 2001-09-26 | 2003-04-04 | Toshiba Corp | 半導体装置 |
EP1318544A1 (en) * | 2001-12-06 | 2003-06-11 | STMicroelectronics S.r.l. | Method for manufacturing semiconductor device packages |
JP2004179253A (ja) * | 2002-11-25 | 2004-06-24 | Nec Semiconductors Kyushu Ltd | 半導体装置およびその製造方法 |
US6985668B2 (en) * | 2003-07-15 | 2006-01-10 | National Semiconductor Corporation | Multi-purpose optical light pipe |
US7156562B2 (en) * | 2003-07-15 | 2007-01-02 | National Semiconductor Corporation | Opto-electronic module form factor having adjustable optical plane height |
KR100765604B1 (ko) * | 2004-11-26 | 2007-10-09 | 산요덴키가부시키가이샤 | 회로 장치 및 그 제조 방법 |
JP5280102B2 (ja) * | 2008-05-26 | 2013-09-04 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9054077B2 (en) * | 2010-03-10 | 2015-06-09 | Altera Corporation | Package having spaced apart heat sink |
CN102104028B (zh) * | 2010-11-05 | 2012-12-12 | 南通富士通微电子股份有限公司 | 半导体塑封体及分层扫描方法 |
US20150219410A1 (en) * | 2014-01-31 | 2015-08-06 | Asia Vital Components Co., Ltd. | Heat Dissipation Structure Enhancing Heat Source Self Heat Radiation |
JP6211956B2 (ja) * | 2014-03-10 | 2017-10-11 | エスアイアイ・セミコンダクタ株式会社 | 樹脂封止型半導体装置およびその製造方法 |
CN106684065A (zh) * | 2016-09-07 | 2017-05-17 | 四川上特科技有限公司 | 一种集成式Mini整流桥新结构及其制作工艺 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0468379B1 (en) * | 1990-07-21 | 1999-11-17 | Mitsui Chemicals, Inc. | Semiconductor device having a package |
JPH0536862A (ja) | 1991-07-31 | 1993-02-12 | Nec Ic Microcomput Syst Ltd | 半導体装置 |
JPH05304226A (ja) * | 1991-08-16 | 1993-11-16 | Mitsubishi Electric Corp | 半導体装置の製造方法および製造装置 |
JP3322429B2 (ja) * | 1992-06-04 | 2002-09-09 | 新光電気工業株式会社 | 半導体装置 |
JPH06326230A (ja) * | 1993-05-11 | 1994-11-25 | Toshiba Corp | 樹脂封止型半導体装置 |
US5489805A (en) * | 1993-12-29 | 1996-02-06 | Intel Corporation | Slotted thermal dissipater for a semiconductor package |
US5434105A (en) * | 1994-03-04 | 1995-07-18 | National Semiconductor Corporation | Process for attaching a lead frame to a heat sink using a glob-top encapsulation |
FR2732509B1 (fr) * | 1995-03-31 | 1997-06-13 | Sgs Thomson Microelectronics | Boitier de montage d'une puce de circuit integre |
US5750423A (en) * | 1995-08-25 | 1998-05-12 | Dai-Ichi Seiko Co., Ltd. | Method for encapsulation of semiconductor devices with resin and leadframe therefor |
KR100386061B1 (ko) * | 1995-10-24 | 2003-08-21 | 오끼 덴끼 고오교 가부시끼가이샤 | 크랙을방지하기위한개량된구조를가지는반도체장치및리이드프레임 |
-
2000
- 2000-02-01 US US09/494,927 patent/US6258630B1/en not_active Expired - Lifetime
- 2000-02-02 TW TW89102035A patent/TW445603B/zh not_active IP Right Cessation
- 2000-02-03 CN CNB001007815A patent/CN1163961C/zh not_active Expired - Fee Related
- 2000-02-03 KR KR10-2000-0005353A patent/KR100373566B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101383330B (zh) * | 2004-11-10 | 2010-06-16 | 松下电器产业株式会社 | 树脂密封半导体器件、具有管芯垫的引线框及其制造方法 |
US7952177B2 (en) | 2004-11-10 | 2011-05-31 | Panasonic Corporation | Resin-sealed semiconductor device, leadframe with die pads, and manufacturing method for leadframe with die pads |
Also Published As
Publication number | Publication date |
---|---|
TW445603B (en) | 2001-07-11 |
US6258630B1 (en) | 2001-07-10 |
KR100373566B1 (ko) | 2003-02-25 |
KR20000071330A (ko) | 2000-11-25 |
CN1264174A (zh) | 2000-08-23 |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030403 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20030403 Address after: Kanagawa, Japan Applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ACER COMPUTER (CHINA) CO., LTD. Free format text: FORMER OWNER: BEIDA FANGZHENG SCIENCE + TECHNOLOGY COMPUTER SYSTEM CO., LTD., SHANGHAI Effective date: 20101101 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 200120 36/F, SHANGHAI INTERNATIONAL BUILDING, NO.360, PUDONG SOUTH ROAD, PUDONG NEW DISTRICT, SHANGHAI TO: 200001 3/F, NO.168, XIZANG MIDDLE ROAD, HUANGPU DISTRICT, SHANGHAI |
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TR01 | Transfer of patent right |
Effective date of registration: 20101103 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040825 Termination date: 20140203 |