CN2437045Y - 集成电路封装结构 - Google Patents

集成电路封装结构 Download PDF

Info

Publication number
CN2437045Y
CN2437045Y CN 00242524 CN00242524U CN2437045Y CN 2437045 Y CN2437045 Y CN 2437045Y CN 00242524 CN00242524 CN 00242524 CN 00242524 U CN00242524 U CN 00242524U CN 2437045 Y CN2437045 Y CN 2437045Y
Authority
CN
China
Prior art keywords
integrated circuit
chip
encapsulated layer
layer
package structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 00242524
Other languages
English (en)
Inventor
刘福洲
杜修文
施鸿文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kingpak Technology Inc
Original Assignee
Kingpak Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kingpak Technology Inc filed Critical Kingpak Technology Inc
Priority to CN 00242524 priority Critical patent/CN2437045Y/zh
Application granted granted Critical
Publication of CN2437045Y publication Critical patent/CN2437045Y/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Light Receiving Elements (AREA)

Abstract

本实用新型为一种集成电路封装结构,其包含:集成电路本体以及多个外接脚。其中该集成电路本体包含:第一封装层,所述凹槽位于该第一封装层下方;导线层,位于该第一封装层上,并具有多个各别与该多个外接脚连接的内接脚;芯片,位于该第一封装层上及该多个内接脚之间,该芯片透过多条金属线与该多个内接脚连接;第二封装层,位于该导线层上,且具有一可露出该芯片的窗口;以及一透光层,位于该第二封装层及该芯片之上。

Description

集成电路封装结构
本实用新型涉及一种集成电路的封装结构,特别涉及光检测芯片的封装结构。
一般检测器可以用来检测信号,该信号可能为光信号,可能为声音信号。本实用新型中的光检测芯片用来接收光信号。接受该光信号后,透过该光检测芯片上的微镜片(Micro Lens)与颜色过滤器(Color Filter)将该光信号转变成电信号,并透过模拟数字转换器将此电信号转换成数字信号,随后由构装线路以及印刷电路板传递信号。
常用光检测芯片主要为光耦合元件(CCD),其封装以陶瓷为主,其步骤包含底板的提供、玻璃或其它黏剂、侧环贴附、烧结、上芯片、打线及玻璃贴附。
以图1为例,首先选用陶瓷材料作为基板14,选用陶瓷材料的原因是可以增加基板14的散热度与密封性。于该光检测芯片11的侧边安置间隔器(spacer)13,于基板14上放置光检测芯片11,最后将玻璃12放置于间隔器13之上。如此则完成光检测芯片的封装。该光检测芯片11放置于玻璃12、基板14以及间隔器13所构成的空间中。
常用封装方法和光检测器结构有以下的缺点:
一、陶瓷基板材料成本较高。
二、陶瓷基板封装光检测芯片的制造成本较高。
本实用新型的目的是针对上述常用技术的缺点,对封装结构提出改良,以结合导线架(Leadframe)及一体成型的塑胶封装层,再将外接脚弯曲形成可与现有光检测集成电路相容的接脚型式,以降低成本及符合市场需求。
为达上述目的,本案提出一种集成电路封装结构,其包含:
一集成电路本体,该集成电路本体底部周围具多个凹槽;以及
多个外接脚,所述外接脚一端连接于该集成电路周围,另一端弯曲埋入所述凹槽。
如所述的集成电路封装结构,其中该集成电路本体包含:
第一封装层,所述凹槽位于该第一封装层下方;
导线层,位于该第一封装层上,并具有多个分别与该多个外接脚连接的内接脚;
芯片,位于该第一封装层上及该多个内接脚之间,该芯片透过多条金属线与该多个内接脚连接;
第二封装层,位于该导线层上,且具有一可露出该芯片的窗口;以及
透光层,位于该第二封装层及该芯片之上。
如所述的集成电路封装结构,其中该第一封装层及该第二封装层为塑胶材质,且一体成型于该导线层上。
如所述的集成电路封装结构,其中该芯片为光检测芯片。
如所述的集成电路封装结构,其中该光检测芯片为CMOS光检测芯片。
如所述的集成电路封装结构,其中该透光层为玻璃透光层。
换言之,本案的集成电路封装结构包含:
第一封装层,其下方具有多个凹槽;
导线层,位于该第一封装层上,并具有多个外接脚及多个内接脚;
芯片,位于该第一封装层上,且位于该多个内接脚之间,该芯片透过多条金属线与该多个内接脚连接;
第二封装层,位于该导线层上,且具有可露出该芯片的窗口;以及
透光层,位于该第二封装层及该芯片之上。
如所述的集成电路封装结构,其中该第一封装层及该第二封装层为塑胶材质,且一体成型于该导线层上,而该透光层为玻璃透光层。
如所述的集成电路封装结构,其中该芯片为光检测芯片,而该光检测芯片为CMOS光检测芯片。
如所述的集成电路封装结构,其中所述外接脚一端连接于该第一封装层的周围,另一端弯曲埋入所述凹槽。
本案得藉由下列图式及详细说明,俾得一更深入的了解:
图1为常用光检测集成电路的封装结构剖面示意。
图2(A)~(C)为本实用新型较佳实施例的光检测集成电路封装外观及剖面图。
图3(A)~(E)为本实用新型较佳实施例的光检测集成电路封装制程。
图号对照:
11:光检测芯片    12:玻璃
13:间隔器        14:基板
20:封装好的集成电路  21:外接脚
22:第二封装层    221:第一封装层
23:玻璃层        24:连接线
25:芯片          26:凹槽
27:内接脚        31:导线架
32:窗口
图2(A)~(C)为本实用新型较佳实施例的光检测集成电路封装外观及剖面图,图2(A)为上视立体图,图2(B)为下视立体图,图2(C)为剖面图。CMOS光检测芯片25四周围有焊垫,由多条连接线24与导线架的内接脚27连接。外接脚21则弯曲,其尾端埋入第一封装层221底部的凹槽26内。第二封装层22与第一封装层221在制作时一体射出成形,其材料可用热塑性塑胶(Thermal Plastic),第二封装层22与第一封装层在射出成形时,将导线架夹在中间,同时第二封装层22留出一窗口,可以用来植入芯片25及连接线24。玻璃层23盖在芯片25及第二封装层22上,使CMOS的光检测芯片25可以接收外部的光线或影像。
图3(A)~(E)为本实用新型较佳实施例的光检测集成电路封装制程。图3(A)首先提供一导线架31,本实施例有四个封装区,每个封装区有多个内接脚27和多个外接脚21。图3(B)利用射出成形的方法,把第一封装层221及第二封装层22一起成形在导线架31的接脚(包含内接脚及外接脚)上,同时第二封装层22与第一封装层221形成一个可植入芯片的窗口32,窗口32内露出的内接脚可供打线(Wire Bonding)的用。图3(C)植入芯片25及打上连接线24。图3(D)将玻璃层23封盖在第二封装层22及芯片25上方。图3(E)最后裁切成四个封装好的集成电路20。
本案的特征在于,封装层(包含第一及第二封装层)一体成型,如此一来即可大为降低成本。另外,外接脚在封装时,其尾端弯曲埋入该集成电路本体下方的凹槽内,使封装出来的集成电路,可以相容于现有的规格,具有市场导向。
就技术而言,第一封装层的下方具有所述凹槽,导线架形成的导线层位于该第一封装层上,并具有多个各别与该多个外接脚连接的内接脚,芯片位于该第一封装层上及该多个内接脚之间,该芯片透过多条金属线与该多个内接脚连接,第二封装层位于该导线层上,且具有可露出该芯片的窗口,而透光层为玻璃层,位于该第二封装层及该芯片之上。该第一封装层及该第二封装层为塑胶材质,且一体成型于该导线层上。该芯片为光检测芯片。该光检测芯片为CMOS光检测芯片。
本实用新型的进步性在于利用一体成型的封装层(相对于常用的基板),大幅减少制作成本,而外接脚制作成相容于现有安装规格的形式,使本封装结构更具市场导向。又本实用新型的封装结构可利用封装设备大量生产,符合实用性,并且其技术特征又是前所未有的,爰依法提出专利的申请,惟说明的实施例尚不足以涵盖创作精神的全部,是以提出申请专利范围如附。

Claims (10)

1.一种集成电路封装结构,其特征在于包含:
集成电路本体,所述集成电路本体底部周围具多个凹槽;以及
多个外接脚,所述外接脚一端连接于所述集成电路周围,另一端弯曲埋入所述凹槽。
2.如权利要求1所述的集成电路封装结构,其特征在于所述集成电路本体包含:
第一封装层,其下方具有所述凹槽;
导线层,位于所述第一封装层上,并具有多个各别与所述多个外接脚连接的内接脚;
芯片,位于所述第一封装层上及所述多个内接脚之间,所述芯片透过多条金属线与所述多个内接脚连接;
第二封装层,位于所述导线层上,且具有可露出所述芯片的窗口;以及
透光层,位于所述第二封装层及所述芯片之上。
3.如权利要求2所述的集成电路封装结构,其特征在于所述第一封装层及第二封装层为塑胶材质,且一体成型于所述导线层上。
4.如权利要求2所述的集成电路封装结构,其特征在于所述芯片为光检测芯片。
5.如权利要求4所述的集成电路封装结构,其特征在于所述光检测芯片为CMOS光检测芯片。
6.如权利要求2所述的集成电路封装结构,其特征在于所述透光层为玻璃透光层。
7.一种集成电路封装结构,其特征在于包含:
第一封装层,其下方具有多个凹槽;
导线层,位于所述第一封装层上,并具有多个外接脚及多个内接脚;
芯片,位于所述第一封装层上,且位于所述多个内接脚之间,所述芯片透过多条金属线与所述多个内接脚连接;
第二封装层,位于所述导线层上,且具有可露出所述芯片的窗口;以及
透光层,位于所处第二封装层所述所述芯片之上。
8.如权利要求7所述的集成电路封装结构,其特征在于所述第一封装层及所述第二封装层为塑胶材质,且一体成型于所述导线层上,而所述透光层为玻璃透光层。
9.如权利要求7所述的集成电路封装结构,其特征在于所述芯片为光检测芯片,而所述光检测芯片为CMOS光检测芯片。
10.如权利要求7所述的集成电路封装结构,其特征在于所述外接脚一端连接于所述第一封装层的周围,另一端弯曲埋入所述凹槽。
CN 00242524 2000-07-26 2000-07-26 集成电路封装结构 Expired - Fee Related CN2437045Y (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 00242524 CN2437045Y (zh) 2000-07-26 2000-07-26 集成电路封装结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 00242524 CN2437045Y (zh) 2000-07-26 2000-07-26 集成电路封装结构

Publications (1)

Publication Number Publication Date
CN2437045Y true CN2437045Y (zh) 2001-06-27

Family

ID=33602640

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 00242524 Expired - Fee Related CN2437045Y (zh) 2000-07-26 2000-07-26 集成电路封装结构

Country Status (1)

Country Link
CN (1) CN2437045Y (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100385654C (zh) * 2004-05-28 2008-04-30 美昌(全球)股份有限公司 导线架封装结构及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100385654C (zh) * 2004-05-28 2008-04-30 美昌(全球)股份有限公司 导线架封装结构及其制造方法

Similar Documents

Publication Publication Date Title
CN1151554C (zh) 半导体器件、其制造方法以及组合型半导体器件
CN1267977C (zh) 光电子元件与用于制造的方法
CN1118097C (zh) 半导体器件
US6746295B2 (en) Method of producing an LED light source with lens
CN1159956C (zh) 装有芯片封装的电路基板的端电极及其制造方法
US6313525B1 (en) Hollow package and method for fabricating the same and solid-state image apparatus provided therewith
CN1163961C (zh) 树脂密封的半导体器件
CN1836319A (zh) 半导体封装中芯片衬垫布线的引线框
KR101843402B1 (ko) 표면 장착 가능한 광전자 소자 그리고 표면 장착 가능한 광전자 소자를 제조하기 위한 방법
US20020060357A1 (en) Quad flat non-leaded package structure for housing CMOS sensor
CN1943004A (zh) 表面贴装多通道光耦合器
CN1719590A (zh) 用于半导体器件的超薄模块及其制造方法
US6531334B2 (en) Method for fabricating hollow package with a solid-state image device
CN1550044A (zh) 表面可装配的光耦合器预装件
CN100352056C (zh) 光学器件及其制造方法
TW200830560A (en) Housing for optoelectronic component, optoelectronic component and method of manufacturing housing for optoelectronic component
CN1855561A (zh) 发光二极管封装的制造方法
CN207572355U (zh) 半导体封装
CN1507041A (zh) 带有倒焊晶片的无引线半导体封装结构及制造方法
CN1672260A (zh) 可表面安装的半导体器件及其制造方法
CN1386002A (zh) 图像传感器模块及其制造方法
CN112820725B (zh) 激光雷达芯片封装结构及封装方法
CN1921125A (zh) 光感测组件封装结构及其制造方法
CN2437045Y (zh) 集成电路封装结构
CN1214461C (zh) Qfn型影像感测元件构装方法

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20010627