CN1719590A - 用于半导体器件的超薄模块及其制造方法 - Google Patents

用于半导体器件的超薄模块及其制造方法 Download PDF

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CN1719590A
CN1719590A CNA2005100047047A CN200510004704A CN1719590A CN 1719590 A CN1719590 A CN 1719590A CN A2005100047047 A CNA2005100047047 A CN A2005100047047A CN 200510004704 A CN200510004704 A CN 200510004704A CN 1719590 A CN1719590 A CN 1719590A
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chip
module
packet
semiconductor chip
active surface
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卢权营
睦承坤
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Samsung Electronics Co Ltd
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Abstract

提供了一种超薄模块，用于半导体器件的特殊类型例如图像传感器装置和微机电系统(MEMS)装置。在该模块中，芯片罩直接与半导体芯片连接以保护该芯片的感光区域和机械元件。该芯片罩也可被用作透镜组件和红外滤光器。在一种制造方法中，芯片被设置在晶片上，并且在切割晶片使芯片彼此分开之前将芯片罩与芯片分别连接。

Description

用于半导体器件的超薄模块及其制造方法
技术领域
本发明通常涉及电子封装技术。本发明特别涉及特殊类型半导体器件，例如图像传感器装置和微机电系统(MEMS)装置，并涉及包括这些装置的超薄模块。
背景技术
最近，增强成像技术不仅为高分辨率照相电话机，而且为当前的以及新兴的要求有成本效益的图像捕捉解决方案的工业应用提供了优质的图像品质。这种增强成像技术通常位于图像传感器模块。该图像传感器模块包括能够把光图像转换为电信号的图像传感器。
更具体地，图像传感器包括像素阵列，并且当光入射到像素阵列上时获得图像。像素把入射光的光子转换为电子。这种类型的图像传感器通常被分类为电荷耦合装置(CCD)或互补金属氧化物硅(CMOS)图像传感器。CCD在图像品质和噪声方面相对优秀，而CMOS图像传感器制造成本更低并且耗电更少。
这些传统的图像传感器可以以裸露或封装的形式组装进模块中。图1A示出了图像传感器装置的传统封装形式，而图1B示出了包含封装形式图像传感器的传统模块。图2示出了包含裸露形式图像传感器的传统模块。
参考图1A，传统图像传感器封装10具有图像传感器附于其上的封装基板12。这种图像传感器在晶片上制造然后以芯片的形式彼此分开。图像传感器芯片11通过金属线13电耦合到封装基板12。封装引线14被设置在封装基板12外部并通过封装基板12中的电路图案(未示出)电耦合到金属线13。封装盖15附于封装基板12之上，由此图像传感器11和金属线13从外部环境中保护起来。封装盖15由可以透过入射光的材料制成。
参考图1B，传统图像传感器模块20a的这种类型包括连接前述图像传感器封装10的模块基板21。封装引线14电耦合到模块基板21上的电路图案(未示出)。模块罩(module cover)22附于模块基板21，因而完全罩住封装10。模块壳22有位于封装10的图像传感器芯片上方的透镜组件23和红外滤光器24。
参考图2，这种类型的传统图像传感器模块20b包括利用板上芯片(COB)技术直接连接模块基板21的图像传感器芯片11。根据此技术，图像传感器芯片11通过金属线13直接并电耦合到模块基板21。模块壳22罩住图像传感器芯片11并连接到模块基板21上。模块壳22具有位于图像传感器芯片11上方的透镜组件23和红外滤光器24。
上述的传统图像传感器模块每个都需要透镜组件23和红外滤光器24以实现其功能。然而，由于透镜组件23和红外线滤光器24与模块壳22是集成的，它们与图像传感器芯片11必要地间隔开。因此，图像传感器模块相对较厚，这是一个决定相关产品尺寸和重量的因素，特别是移动设备。
发明内容
本发明的一个目的是提供一种用于特殊半导体器件例如图像传感器装置和微机电系统(MEMS)装置的超薄模块。
本发明的另一个目的是为易于大规模生产的特殊半导体器件提供超薄模块。
根据本发明的一个方面，超薄模块包括半导体芯片，及设置于芯片有源表面特定区域上方的保护性芯片罩(chip cover)。特定区域位于该有源表面中心部分。半导体芯片可包括图像传感器，其中芯片的特定区域是感光区域。可选择地，半导体芯片可包括微机电系统(MEMS)装置，其中机械元件占据芯片有源表面的特定区域。多个输入/输出焊盘沿着有源表面的周边设置。芯片罩具有设置在其下表面的中心部分的空腔。空腔覆盖半导体芯片有源表面的特定区域，但该下表面未覆盖输入/输出焊盘。
该超薄模块可还包括模块基板，该基板支撑半导体芯片且芯片直接连接到其上并与之电耦合。模块基板可以是印刷电路板、引线框、陶瓷基板或电路膜。
根据本发明的另一方面，芯片罩可以由透明材料例如玻璃、透明树脂、或透明金属氧化物制成。芯片罩可以包含或涂覆金属离子。可选择地，芯片罩可以由半透明或不透明材料例如塑料或陶瓷制成。芯片罩也可以制成作为透镜组件和/或红外滤光器。
根据本发明的另一个方面，超薄模块可还包括包围半导体芯片的塑料树脂体。这种情况下，芯片罩的上表面暴露在该塑料树脂体的外部。可选择地，模块可还包括覆盖半导体芯片的模块壳，其连接到模块基板上并具有位于芯片罩上方的透镜组件。
根据本发明的另一方面，制造超薄模块的方法包括提供包含多个半导体芯片的晶片，并在晶片被切割使芯片彼此分开之前将芯片罩连接到每个芯片上。芯片罩被连接使得在其下表面的空腔被定位在芯片特定区域上方并向其开放，同时输入/输出焊盘在芯片罩外部保持暴露。一旦芯片彼此分开，该方法可还包括将每个半导体芯片直接连接到模块基板上并与之电耦合。
也可以进行成型工艺以将半导体芯片嵌入塑料树脂体中，同时保留芯片的上表面暴露在该塑料树脂的外部。可选择地，该方法可还包括将具有透镜组件的模块壳连接到模块基板上，从而覆盖半导体芯片并将透镜组件定位于芯片上方。
附图说明
图1A是包括图像传感器装置的传统封装的截面图。
图1B是包括图1A所示封装的传统模块的截面图。
图2是包括裸露形式图像传感器装置的另一种传统模块的截面图。
图3是根据本发明的超薄模块的截面图。
图4是根据本发明的超薄模块的另一实施例的截面图。
图5是根据本发明的超薄模块的另一实施例的截面图。
图6A到图9是说明根据本发明的超薄模块的制造方法的示意图，其中：
图6A和6B分别是包括半导体器件芯片的晶片的平面图和截面图，
图7A和7B分别是晶片的平面图和截面图并示出直接附于半导体器件芯片的芯片罩，
图8是晶片的截面图并示出各芯片的分隔，及
图9是分割的芯片的截面图，其正被固定到模块的基板。
图10A到10D是根据本发明具有不同形式芯片罩的模块的截面图。
具体实施方式
现在将在下文中参照附图更充分地描述本发明。在本公开中，为清晰起见众所周知的结构和工艺不详细描述或说明。另外，附图不是按比例的。相反，为了说明的简单和清晰某些元件的相对尺寸可被夸大。此外，在整个附图中使用相同参考标记标明相同和对应的部分。
参考图3到5，每个超薄模块30、40和50包括直接连接到模块基板35或45上表面上的半导体芯片31。半导体芯片31有多个沿其有源表面周边设置的输入/输出(I/O)焊盘32。另外，半导体芯片31在需要保护的有源表面的中心具有特定区域33。尽管图中未示出，可在模块35或45的下表面设置另一个芯片例如数字信号处理(DSP)芯片。
半导体芯片31是特殊类型的装置，例如图像传感器装置或微机电系统(MEMS)装置。在图像传感器装置的情况下，芯片31的特定区域33是感光区域，或者在MEMS装置的情况下，该特定区域33由机械元件占据。
如本领域的技术人员所知，MEMS装置包括通过微加工技术集成在普通硅基板上的微机械元件和电子设备(electronics)。电子设备用集成电路(IC)工艺制造，而微机械元件用兼容的微加工工艺制造。因此，在MEMS装置中，可在小的硅芯片上以相对较低的成本实现空前水平的功能、可靠性、和精致化。
超薄模块30、40和50可使用如图3和5所示的印刷电路板(PCB)35，或者如图4所示的引线框45，作为模块基板。然而，这些模块基板只是例子，作为替代可使用其他合适的模块基板例如陶瓷基板或电路膜。
每个超薄模块30、40和50还包括连接到半导体芯片31上表面上的芯片罩34。芯片罩34位于特定区域33上方，不仅用以从外部环境保护特定区域33(类似于图1A所示传统的封装罩15)，也用于取代图1B和图2所示的传统的红外线滤光器24。芯片罩34也可以取代图1B和图2所示的传统透镜组件23。例如，图3和4的实施例中，除了作为保护罩，芯片罩34也作为透镜组件和红外线滤光器。另一方面，图5的实施例中，除了作为保护罩，芯片罩34只作为红外线滤光器。
在图像传感器模块的情况下，芯片罩34可以由透明材料例如玻璃、透明树脂例如丙烯酸树脂和聚酯树脂、或透明金属氧化物例如氧化锡或氧化铟制成。另外，芯片罩34可包含或涂覆金属离子，例如铜或铁离子从而过滤红外线。在MEMS装置模块的情况下，芯片罩34可由半透明或不透明材料例如塑料或陶瓷或者由透明材料制成。
在图3和5的实施例中，芯片31的I/O焊盘32通过金属线36电耦合到PCB 35的电路图案(未示出)。在图4的实施例中，芯片31通过黏合剂(未示出)机械地连接到引线框45的芯片支撑垫45a上并且通过金属线36电耦合到引线框45的引线45b。
在图3和4的实施例中，由成型工艺形成的塑料树脂体37也完全覆盖芯片31和金属线36。然而，芯片罩34由塑料树脂体37保持暴露。塑料树脂体体37比图1B和2所示的传统模块壳22更易于大规模生产并且具有更低的制造成本。
在图4的实施例中，引线框的芯片支撑垫45a可被包含在塑料树脂37内或被暴露从而增强散热。在另一种可选择的实施例中，引线框45可以只具有引线45b，即可不通过芯片支撑垫45a被设置。在这种情况，芯片31的底表面可以被暴露在塑料树脂体37的外部，并且适合的芯片支撑物，例如胶带可被临时使用直到成型工艺完成。
当芯片罩34只用来作为红外线滤光器，如图5的实施例所示，超薄模块50可还包括具有透镜组件58的模块壳57。模块壳57罩住半导体芯片31并附于模块基板35。透镜组件58刚好位于芯片罩34上方。
图6A到9按顺序示出一种根据本发明制造超薄模块的方法。在下面对该方法的描述中，也将更充分地描述超薄模块的结构。
参考图6A和6B，首先提供晶片60。晶片60包括多个形成在硅基板上的半导体器件芯片31。划片线61在相邻的各个芯片31之间的正交方向延伸。如上所讨论的，每个半导体芯片31包括特殊类型的装置例如图像传感器或MEMS装置。如前所述，I/O焊盘32沿芯片31有源表面的周边排列，并且有源表面的中心部分有一必须被保护使不受外部环境的特定区域33。
晶片60被提供之后，芯片罩34直接附于芯片31。更具体地，如图7A和7B所示，芯片罩34直接连接到每个芯片31的有源表面上。注意此连接芯片罩34的工艺对晶片60的所有芯片31是同时执行的。另外，每个芯片罩34在其下表面的中心部分具有凹度。该凹度足够大以容纳芯片31的特定区域33，但芯片罩34本身不覆盖I/O焊盘32。芯片罩34的凹度34a可由几种众所周知的技术例如机械切削、激光切割、刻蚀或成型技术中的一种形成。如果芯片罩34只是用作罩和红外线滤光器，芯片罩34的形状没有限制。然而，如果芯片罩34也用作为透镜组件，芯片罩34限定凹度的部分必须具有透镜的形状。
图10A到10D示出芯片罩34的几个例子。如图10A和10B所示，芯片罩34可具有形成平凸透镜或平凹透镜的部分。在这些情况下，限定凹度底部的芯片罩34的表面34a是弯曲的。可选择地，如图10C和10D所示，芯片罩34可具有形成双凸透镜或双凹透镜的部分。在这两种情况下，芯片罩34的上表面34b以及限定凹度底部的表面34a两个都是弯曲的。
芯片罩34分别直接附于各个芯片31之后，切割晶片60从而将各个芯片31彼此分开。至此，如图8所示，晶片60暂时由连接到晶片60下表面上的胶带62支撑。然后晶片60进行典型的晶片切片工艺，其中切割工具(未示出)例如金刚石轮或激光切割器沿划片线61切割晶片60。各芯片31由此彼此分开同时保持连接到胶带62上。通常晶片切片工艺会经常产生硅微粒和粉尘。然而，芯片罩34保护晶片31的特定区域33避免这些污染，并避免没有芯片罩时在切片工艺之后当晶片用去离子晶片清洁时会形成的污染。
下一步，如图9所示执行芯片附着工艺。在此工艺中，每个芯片31附于模块基板35(或如图4所示的引线框45)。在此工艺中，芯片移动工具(未示出)，例如真空吸盘利用真空固定芯片31并将芯片31从胶带(图8中62)分离。然后真空吸盘将芯片31移到模块基板35(或引线框45)并将芯片31下压到模块基板35上(或引线框45)。同时，在此芯片附着工艺期间，芯片罩34保护特定区域33免于机械震动。
然后，执行引线键合工艺。在制造图3和5的实施例中，I/O焊盘32通过引线键合工艺连线到模块基板35。另一方面，在制造图4的实施例中，I/O焊盘32连线到接线框45。最后，在制造图3和4的实施例中，执行成型工艺以形成塑料树脂体37。在制造图5的实施例中，壳57附于模块基板35。
如上所讨论，根据本发明的超薄模块对于特殊类型的半导体器件芯片例如图像传感器装置芯片或MEMS装置芯片特别有用。如上所讨论，本发明的超薄模块以直接附于芯片并能作为透镜组件和红外滤光器的芯片罩为特征。此独特结构使要求的模块厚度最小化并因此使利用此模块的最终产品的尺寸和重量最小化。
另外，入射光应该能够无障碍地到达图像传感器装置芯片的感光区域。而MEMS装置芯片应该具有允许芯片的机械元件自由工作的空间。本发明的模块结构满足图像传感器装置和MEMS装置芯片的这些特殊要求。
另外，本发明的制造方法以在晶片切片之前的芯片罩附着步骤为特征。这允许芯片的特定区域被保护免于受晶片切片工艺中产生的硅微粒和粉尘的污染。这也防止芯片的特定区域被在切片工艺之后用来清洁晶片的去离子晶片所污染。另外，本发明的制造方法可以使用成型工艺因为芯片的特定区域在成型工艺前被完全保护起来。这有利于该模块的大规模生产并因此降低生产成本。
最后，尽管本发明参考其优选实施例特别地进行了示出并描述，本领域的技术人员应当理解在不偏离权利要求所限定的本发明的真正精神和范围的情况下可以对其做出各种形式和细节上的改变。

Claims (26)

1.一种超薄模块，包括：
半导体芯片，其具有有源表面、一位于该有源表面中心部分的特定区域、以及沿该有源表面周边设置的输入/输出焊盘；
一支撑半导体芯片的模块基板，所述芯片直接与该模块基板连接并电耦合到该模块基板；以及
一直接与该半导体芯片的该有源表面连接的芯片罩，所述芯片罩具有面对该芯片的下表面，及在所述下表面中心部分的空腔，该空腔设置在该半导体芯片有源表面的特定区域的上方并跨越之，并且所述芯片罩的该下表面具有终止于芯片有源表面的所述周边内的外边缘，从而不覆盖输入/输出焊盘。
2.如权利要求1所述的模块，其中该半导体芯片包括一图像传感器。
3.如权利要求2所述的模块，其中该特定区域包括一感光区域。
4.如权利要求1所述的模块，其中该半导体芯片包括一微机电系统(MEMS)装置。
5.如权利要求4所述的模块，其中该特定区域包括机械元件。
6.如权利要求1所述的模块，其中该模块基板是一印刷电路板、一引线框、一陶瓷基板或一其上具有电路的薄膜。
7.如权利要求1所述的模块，其中该芯片罩是透明材料。
8.如权利要求7所述的模块，其中所述芯片罩的材料是从玻璃、透明树脂及透明金属氧化物构成的组中选择出来。
9.如权利要求7所述的模块，其中该芯片罩包含金属离子或用之涂覆。
10.如权利要求1所述的模块，其中该芯片罩是半透明或不透明材料。
11.如权利要求10所述的模块，其中该芯片罩是塑料或陶瓷。
12.如权利要求1所述的模块，还包括覆盖半导体芯片的塑料树脂体，该芯片罩的上表面被所述塑料树脂体暴露。
13.如权利要求1所述的模块，还包括一模块壳，其覆盖该半导体芯片的，与该模块基板连接，并具有位于该芯片罩正上方的透镜组件。
14.如权利要求1所述的模块，其中一部分覆盖在所述特定区域上方的芯片罩具有弯曲表面，从而该芯片罩的所述部分具有透镜的形式。
15.如权利要求1所述的模块，其中该芯片罩包括过滤红外线的材料。
16.一种超薄图像传感器模块，包括：
一图像传感器芯片，具有一有源表面、一位于该有源表面的中心部分的感光区域、以及沿该有源表面的周边设置的输入/输出焊盘；
一支撑图像传感器芯片的模块基板，该图像传感器芯片直接与所述基板连接并电耦合所述基板；及
一直接与图像传感器芯片的有源表面连接的芯片罩，所述芯片罩具有面对该芯片的下表面，及在所述下表面中心部分中的空腔，该空腔被设置在该芯片感光区域的上方并跨越之，所述芯片罩的下表面具有终止于芯片有源表面的所述周边内的外边缘，从而不覆盖输入/输出焊盘，以及所述芯片罩包括过滤红外线的材料。
17.如权利要求16所述的模块，其中一部分覆盖在所述感光区域上方的芯片罩具有弯曲表面，从而所述该芯片罩的所述部分具有透镜的形式。
18.如权利要求16所述的模块，其中所述芯片罩包括从包括玻璃、透明树脂、及透明金属氧化物构成的组中选择出来的材料。
19.如权利要求18所述的模块，其中芯片罩包含金属离子或用之涂覆。
20.一种超薄模块，包括：
一半导体芯片，其具有一有源表面、一位于该有源表面中心部分的特定区域、以及沿该有源表面的周边设置的输入/输出焊盘；
一直接与该半导体芯片有源表面连接的芯片罩，所述芯片罩具有面对该芯片的下表面，及在所述下表面中心部分的空腔，该空腔被设置在该半导体芯片的该有源表面的该特定区域的上方并跨越之，所述芯片罩的下表面具有终止于芯片有源表面的所述周边内的外边缘，从而没有覆盖输入/输出焊盘；和
半导体芯片被嵌入在其中的塑料树脂体，该芯片罩的上表面被所述塑料树脂体暴露。
21.如权利要求20所述的模块，还包括嵌入所述塑料树脂体中的引线框，该引线框具有多个引线，并且所述输入/输出焊盘被电耦合到所述引线框。
22.如权利要求21所述的模块，其中所述的引线框还包括支撑所述半导体芯片的芯片支撑垫。
23.如权利要求20所述的模块，还包括支撑半导体芯片的模块基板，和通过所述塑料树脂体从所述输入/输出焊盘延伸到所述模块基板的连接线。
24.一种制造超薄模块的方法，该方法包括：
提供包含多个半导体芯片的晶片，其中每个半导体芯片具有一有源表面、一位于所述有源表面中心部分的特定区域、及沿该有源表面周边设置的输入/输出焊盘；
直接将芯片罩分别与每个半导体芯片的有源表面连接，其中所述芯片罩具有下表面以及在所述下表面中心部分的空腔，从而使得该空腔位于特定区域上方并向其开放，同时输入/输出焊盘在该芯片罩的外部暴露；
然后切割该晶片从而将所述半导体芯片彼此分开；及
然后直接将每个半导体芯片与基板连接。
25.如权利要求24所述的方法，还包括将该半导体芯片嵌入塑料树脂体中，同时让该半导体芯片的上表面暴露在该塑料树脂体的外部。
26.如权利要求24所述的方法，还包括将具有透镜组件的模块壳连接到基板以覆盖该半导体芯片并使该透镜组件定位于该半导体芯片特定区域的上方。
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