CN1873992A - 影像感测器封装和封装制程 - Google Patents

影像感测器封装和封装制程 Download PDF

Info

Publication number
CN1873992A
CN1873992A CNA2005100351386A CN200510035138A CN1873992A CN 1873992 A CN1873992 A CN 1873992A CN A2005100351386 A CNA2005100351386 A CN A2005100351386A CN 200510035138 A CN200510035138 A CN 200510035138A CN 1873992 A CN1873992 A CN 1873992A
Authority
CN
China
Prior art keywords
viscose glue
image sensor
substrate
wire
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005100351386A
Other languages
English (en)
Inventor
魏史文
吴英政
许博智
刘坤孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yangxin Technology Co ltd
Hongfujin Precision Industry Shenzhen Co Ltd
Original Assignee
Yangxin Technology Co ltd
Hongfujin Precision Industry Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yangxin Technology Co ltd, Hongfujin Precision Industry Shenzhen Co Ltd filed Critical Yangxin Technology Co ltd
Priority to CNA2005100351386A priority Critical patent/CN1873992A/zh
Priority to US11/398,023 priority patent/US20060273249A1/en
Publication of CN1873992A publication Critical patent/CN1873992A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48991—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on the semiconductor or solid-state body to be connected
    • H01L2224/48992—Reinforcing structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

一种影像感测器封装，其包括一基板、一影像感测晶片、多条引线、一粘胶和一盖体，其中，该基板具有一上表面，该上表面上设置有多个上焊垫；该影像感测晶片固设在基板上表面，且其顶面具有一感测区，该影像感测晶片上设有多个晶片焊垫；该多条引线的一端与影像感测晶片的晶片焊垫固定连接，另一端则与基板的上焊垫相电连接；该粘胶涂布在影像感测晶片顶面四周并覆盖引线与晶片焊垫的连接处，且粘胶的高度大于引线的高度；该盖体是一透光板，其固设在该粘胶上。本发明的影像感测器封装体积较小，且可有效减少粉尘对感测区的污染以提高产品良率。

Description

影像感测器封装和封装制程
【技术领域】
本发明是关于晶片封装和封装制程，特别是关于一种小尺寸影像感测器封装和封装制程。
【背景技术】
影像感测器可在空间中检测光源并将其转换为电信号，其已被广泛应用在各种光电产品中，且成为关键零组件之一。目前，手机向着多功能的趋势发展，具有照相功能的手机一经推出即倍受欢迎。应用于手机的相机模组不仅要满足轻薄短小的要求，还须具有较好的照相性能。而影像感测器是决定相机模组尺寸大小和照相性能的主要因素之一。
如图1所示的一传统影像感测器封装，该影像感测器封装包括一基板10、一影像感测器12和一盖体14，其中，该基板10具有一底板101，该底板101顶面四周向一侧延伸一凸缘102，该底板101的顶面与凸缘102的内壁围成一容室103。该底板101顶面和底面上分别设置有多个焊垫104、105，该顶面焊垫104与底面焊垫105相对应且通过底板101内部的镀有导电层的导通孔106相电连接。该影像感测器12设置在容室103中，且通过粘胶13固定在底板101上。该影像感测器12顶部具有一感测区121，其四周环绕设置有多个焊垫122，且该多个焊垫122通过多条引线123与底板101的顶面焊垫104相电连接。该引线123、焊垫122和104上均涂布有粘胶13。盖体14通过粘胶13固定在凸缘102顶部。
该影像感测器封装的底板101须同时容装焊垫104和影像感测器12，且影像感测器12与基板10的凸缘102的内壁之间须提供足够的空间供打线器活动，以致于该影像感测器封装的体积将远大于影像感测器12本身的体积。如此，其无法满足现行电子产品轻薄短小的要求。
另外，虽然无法避免基板10和盖体14产生粉尘以致污染影像感测器12的感测区121，但是，由于该影像感测器12所处的由基板10和盖体14所封闭的空间较大，其产生粉尘的表面也较大，感测区121则更易受到粉尘的污染，从而导致该影像感测器封装的生产良率降低。
【发明内容】
因此，有必要提供一种生产良率较高的小尺寸影像感测器封装。
另，还有必要提供一种生产良率较高的小尺寸影像感测器封装制程。
一种影像感测器封装，其包括一基板、一影像感测晶片、多条引线、一粘胶和一盖体，其中，该基板具有一上表面，该上表面上设置有多个上焊垫；该影像感测晶片固设在基板上表面，且其顶面具有一感测区，该影像感测晶片上设有多个晶片焊垫；该多条引线的一端与影像感测晶片的晶片焊垫固定连接，另一端则与基板的上焊垫相电连接；该粘胶涂布在影像感测晶片顶面四周并覆盖引线与晶片焊垫的连接处，且粘胶的高度大于引线的高度；该盖体是一透光板，其固设在该粘胶上。
一种影像感测器封装制程，包括以下步骤：提供一基板，其包括一上表面，该上表面上设置有多个上焊垫；清洗基板上表面，并提供一晶片粘胶，在基板上表面涂布晶片粘胶；提供一影像感测晶片，其顶面具有一感测区，该影像感测晶片上设有多个晶片焊垫；将影像感测晶片的底面放置在基板上涂布晶片粘胶处，并固化晶片粘胶；提供多条引线，并将引线的一端与影像感测晶片的晶片焊垫固定连接，另一端则与基板的上焊垫相电连接；提供一粘胶，将粘胶涂布在影像感测晶片顶面四周并覆盖引线与晶片焊垫的连接处，且粘胶的高度略大于引线的高度；提供一透明盖体，清洁该盖体并将其放置在粘胶上，然后按压该盖体；固化粘胶，使盖体固定粘着在粘胶上，以封闭影像感测晶片的感测区。
相较现有技术，所述影像感测器封装的影像感测晶片位于基板上，其处于一开放的空间，可供打线器自由活动，因此该影像感测器封装的基板的面积可尽量缩小至与该影像感测晶片面积几近相同，因而，可大幅减小该影像感测器封装的体积；而且，封闭该影像感测晶片感测区的空间是由影像感测晶片上的粘胶的内壁和盖体底面共同围成，该封闭空间较小，可有效减少粉尘对感测区的污染以提高生产良率。
【附图说明】
图1是一已知影像感测器封装的剖视图；
图2是本发明影像感测器封装一较佳实施例的剖视图；
图3是本发明影像感测器封装另一较佳实施例的剖视图。
【具体实施方式】
请参阅图2所示，本发明影像感测器封装的一较佳实施例包括一基板20、一晶片粘胶22、一影像感测晶片23、多条引线24、一粘胶26和一盖体28。
该基板20由塑料、玻璃纤维、强化塑料或陶瓷等材质所制成。该基板20上表面设置有多个上焊垫201，且其下表面上设置有多个分别与上焊垫201相对应且电连接的下焊垫202。该下焊垫202用于该影像感测器封装与其它电路板相电连接。
该影像感测晶片23通过晶片粘胶22固定在基板20上表面，且其顶面具有一感测区231，该感测区231四周布设有多个晶片焊垫232。
该多条引线24是由黄金等导电性佳的材料制成，其一端与影像感测晶片23的晶片焊垫232固定电连接，另一端则与基板20的上焊垫201固定电连接。
粘胶26环绕覆盖在影像感测晶片23顶面周边并覆盖引线23与晶片焊垫232的连接处，且其高于引线24的高度。
盖体28是一透光板，其通过粘胶26固设在影像感测晶片23上且其底面抵触引线24，从而将影像感测晶片23封闭。
该较佳实施例的影像感测器封装制程包括以下步骤：
提供一基板20，该基板20由塑料、玻璃纤维、强化塑料或陶瓷等材质所制成，其上表面上设置有多个上焊垫201，且其下表面上设置有多个分别与上焊垫201相对应且电连接的下焊垫202，以用于该影像感测器封装与其它电路板相电连接；
清洗基板20上表面，并在基板20上涂布晶片粘胶22；
提供一影像感测晶片23，其顶面具有一感测区231，该感测区231四周设置有多个晶片焊垫232；
将影像感测晶片23底面放置在基板20上涂布有晶片粘胶22处，然后固化晶片粘胶22以将影像感测晶片23固定粘着在基板20上；
将引线24的一端与影像感测晶片23的晶片焊垫232固定连接，另一端则与基板20的上焊垫201相电连接；
将粘胶26涂布在影像感测晶片23顶面四周并覆盖引线24与晶片焊垫232的连接处，且粘胶26的高度略大于引线24的高度；
清洁该盖体28并将其放置在粘胶26上，然后按压该盖体28使其接触引线24；
固化粘胶26，使盖体28固定粘着在粘胶26上，以封闭影像感测晶片23的感测区231。
所述影像感测器封装的影像感测晶片23位于基板20上，其处于一开放的空间，可供打线器自由活动，因此该影像感测器封装的基板20的面积可尽量缩小至与该影像感测晶片23面积几近相同，因而，可大幅减小该影像感测器封装的体积；而且，封闭该影像感测器23的感测区231的空间是由设置在影像感测晶片23顶面的粘胶26的内壁和盖体28围成，且盖体28的底面距影像感测晶片23顶面间的高度是由引线24决定，由此，不仅该封闭空间小，可有效减少粉尘对感测区231的污染以提高生产良率，并且可控制该影像感测器封装的高度。
请参阅图3所示，本发明影像感测器封装的另一较佳实施例包括一基板30、多个上焊垫301、多个下焊垫302、一晶片粘胶32、一影像感测晶片33、一感测区331、多个晶片焊垫332、多条引线34、一粘胶36和一盖体38，其与前一较佳实施例的结构大体相同，其差异仅在于：粘胶36涂布在影像感测晶片33顶面四周和引线34上，并覆盖引线34与晶片焊垫332的连接处和引线34与基板30的上焊垫301的连接处，且粘胶36的高度略大于引线34的高度。
可以理解，该较佳实施例的影像感测器封装制程与前一较佳实施例制程大体相同，其差异仅在于：涂布粘胶36时，将该粘胶36涂布在影像感测晶片33顶面四周和引线34上，并覆盖引线34与晶片焊垫332的连接处和引线34与基板30的上焊垫301的连接处，且粘胶36的高度略大于引线34的高度。
本发明影像感测器封装的另一较佳实施例和其制程，其引线34、引线34与晶片焊垫332和上焊垫301的连接处均受到粘胶36的保护，可避免其受到外界影响而损坏，进一步提高该产品的良率。

Claims (8)

1.一种影像感测器封装，其包括：一基板、一影像感测晶片、多条引线、一粘胶和一盖体，其中，该基板具有一上表面，该上表面上设置有多个上焊垫；该影像感测晶片固设在基板上表面，其顶面具有一感测区，且该影像感测晶片上设有多个晶片焊垫；该多条引线一端与影像感测晶片的晶片焊垫固定连接，另一端则与基板的上焊垫相电连接；该盖体是一透光板，其特征在于：该粘胶涂布于影像感测晶片顶面周边并覆盖引线与晶片焊垫的连接处，且粘胶的高度大于引线的高度；该盖体固设在该粘胶上。
2.如权利要求1所述的影像感测器封装，其特征在于：所述基板还具有一下表面，该下表面上设置有多个与上焊垫对应且电连接的下焊垫。
3.如权利要求1所述的影像感测器封装，其特征在于：所述粘胶还涂布在引线上，且覆盖引线与基板上焊垫的连接处。
4.如权利要求1所述的影像感测器封装，其特征在于：所述盖体底面接触该引线。
5.一种影像感测器封装制程，其特征在于包括以下步骤：
提供一基板，其包括一上表面，该上表面上设置有多个上焊垫；
清洗基板上表面，并提供一晶片粘胶，且在基板上表面涂布晶片粘胶；
提供一影像感测晶片，其顶面具有一感测区，该影像感测器上设有多个晶片焊垫；
将影像感测晶片的底面放置在基板上涂布晶片粘胶处，然后固化该晶片粘胶；
提供多条引线，并将引线的一端与影像感测晶片的晶片焊垫固定连接，另一端则与基板的上焊垫相电连接；
提供一粘胶，将粘胶涂布在影像感测晶片顶面四周并覆盖引线与晶片焊垫的连接处，且粘胶的高度大于引线的高度；
提供一透明盖体，清洁该盖体并将其放置在粘胶上，然后按压该盖体；
固化粘胶，使盖体固定粘着在粘胶上，以封闭影像感测晶片的感测区。
6.如权利要求5所述的影像感测器封装制程，其特征在于：所述基板还具有一下表面，该下表面上设置有多个与上焊垫相对应且电连接的下焊垫。
7.如权利要求5所述的影像感测器封装制程，其特征在于：所述粘胶还涂布在引线上，且覆盖引线与基板上焊垫的连接处。
8.如权利要求5所述的影像感测器封装制程，其特征在于：所述盖体底面接触该引线。
CNA2005100351386A 2005-06-03 2005-06-03 影像感测器封装和封装制程 Pending CN1873992A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CNA2005100351386A CN1873992A (zh) 2005-06-03 2005-06-03 影像感测器封装和封装制程
US11/398,023 US20060273249A1 (en) 2005-06-03 2006-04-04 Image sensor chip package and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2005100351386A CN1873992A (zh) 2005-06-03 2005-06-03 影像感测器封装和封装制程

Publications (1)

Publication Number Publication Date
CN1873992A true CN1873992A (zh) 2006-12-06

Family

ID=37484354

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005100351386A Pending CN1873992A (zh) 2005-06-03 2005-06-03 影像感测器封装和封装制程

Country Status (2)

Country Link
US (1) US20060273249A1 (zh)
CN (1) CN1873992A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101221930B (zh) * 2007-01-10 2010-06-09 日月光半导体制造股份有限公司 芯片封装结构及其封装方法
US7796188B2 (en) 2007-04-10 2010-09-14 Hon Hai Precision Industry Co., Ltd. Compact image sensor package and method of manufacturing the same
CN113364955A (zh) * 2021-06-04 2021-09-07 烟台艾睿光电科技有限公司 一种红外模组

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5550380B2 (ja) * 2010-02-25 2014-07-16 キヤノン株式会社 固体撮像装置及び撮像装置
US9184331B2 (en) * 2011-02-24 2015-11-10 Kingpak Technology Inc. Method for reducing tilt of optical unit during manufacture of image sensor
TWI414062B (zh) * 2011-02-24 2013-11-01 Kingpaktechnology Inc 降低透光板傾斜度之影像感測器製造方法
US8605211B2 (en) * 2011-04-28 2013-12-10 Apple Inc. Low rise camera module
US9197796B2 (en) * 2011-11-23 2015-11-24 Lg Innotek Co., Ltd. Camera module
US9664616B2 (en) * 2015-11-04 2017-05-30 The Boeing Company Methods and systems for non-destructive testing via hybrid spectral sensors
US20220093664A1 (en) * 2020-09-20 2022-03-24 UTAC Headquarters Pte. Ltd. Reliable semiconductor packages

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196919A (en) * 1990-12-07 1993-03-23 Kyocera America, Inc. Use of a contamination shield during the manufacture of semiconductor packages
US6934065B2 (en) * 2003-09-18 2005-08-23 Micron Technology, Inc. Microelectronic devices and methods for packaging microelectronic devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101221930B (zh) * 2007-01-10 2010-06-09 日月光半导体制造股份有限公司 芯片封装结构及其封装方法
US7796188B2 (en) 2007-04-10 2010-09-14 Hon Hai Precision Industry Co., Ltd. Compact image sensor package and method of manufacturing the same
CN113364955A (zh) * 2021-06-04 2021-09-07 烟台艾睿光电科技有限公司 一种红外模组

Also Published As

Publication number Publication date
US20060273249A1 (en) 2006-12-07

Similar Documents

Publication Publication Date Title
CN1873992A (zh) 影像感测器封装和封装制程
CN1967852A (zh) 影像感测器封装
CN1885908B (zh) 照相模组
CN1996592B (zh) 影像感测器封装
US20080108169A1 (en) Ultrathin module for semiconductor device and method of fabricating the same
CN1486079A (zh) 摄像机模块
CN101465344B (zh) 影像模组封装结构
CN1905144A (zh) 用于封装图像传感器的方法和封装的图像传感器
CN109244067B (zh) 可携式电子装置及其影像撷取模块与影像感测组件
CN100483725C (zh) 影像感测器封装及其应用的数码相机模组
CN101174643A (zh) 影像感测器封装及其应用的影像感测器模组
CN100555643C (zh) 影像感测芯片封装结构及应用该结构的数码相机模组
KR20170073796A (ko) 반도체 패키지 및 패키지 제조 방법
CN100483726C (zh) 影像感测器封装及其应用的数码相机模组
CN1450651A (zh) 影像传感器封装结构及应用该影像传感器的影像撷取模块
CN101075596A (zh) 可堆叠式半导体封装结构及其制造方法
TWM553428U (zh) 可攜式電子裝置及其影像擷取模組與影像感測組件
CN1956201A (zh) 图像感测器件的封装结构
CN2459831Y (zh) 一种影像感测器
CN1719614A (zh) 影像感应器封装构造及其制造方法
CN2653694Y (zh) 用于影像感测晶片封装的基板
CN2648606Y (zh) 影像传感器芯片尺寸封装结构
KR100497286B1 (ko) 칩 온 보드 타입 이미지 센서 모듈 및 그 제조 방법
CN1476065A (zh) 影像传感器封装法
CN2678142Y (zh) 光感测芯片的封装结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication