CN116332627A - 一种低热膨胀系数高温共烧陶瓷(htcc)材料及其制备方法 - Google Patents
一种低热膨胀系数高温共烧陶瓷(htcc)材料及其制备方法 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 67
- 239000000463 material Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 239000002994 raw material Substances 0.000 claims abstract description 54
- 238000005245 sintering Methods 0.000 claims abstract description 51
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 32
- 229910052878 cordierite Inorganic materials 0.000 claims abstract description 32
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910000174 eucryptite Inorganic materials 0.000 claims abstract description 28
- 238000005266 casting Methods 0.000 claims abstract description 19
- 238000002156 mixing Methods 0.000 claims abstract description 18
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910000423 chromium oxide Inorganic materials 0.000 claims abstract description 17
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 15
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims abstract description 12
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 39
- 238000003746 solid phase reaction Methods 0.000 claims description 16
- 238000001308 synthesis method Methods 0.000 claims description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- 239000002154 agricultural waste Substances 0.000 claims description 8
- 238000005049 combustion synthesis Methods 0.000 claims description 8
- 239000002440 industrial waste Substances 0.000 claims description 8
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 8
- 239000011707 mineral Substances 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000003980 solgel method Methods 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000007731 hot pressing Methods 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
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- 238000005452 bending Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 239000012776 electronic material Substances 0.000 abstract description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 10
- 238000003756 stirring Methods 0.000 description 9
- 238000001816 cooling Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
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- 230000008054 signal transmission Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 239000003870 refractory metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
本发明涉及电子材料技术领域,且公开了一种低热膨胀系数高温共烧陶瓷(HTCC)材料,包括以下重量份原料:微米级氧化铝:70%~90%、亚微米级氧化铝:1%~20%、堇青石:3%~5%、β‑锂霞石:3%~5%、三氧化二铬1%~3%、三氧化钼1%~3%、氧化钇0.1%~1%,流延助剂若干,一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法,包括以下工作步骤:S1:原料获取;S2:原料混合;S3:烧结成密。本发明中,通过堇青石、β‑锂霞石的引入,同时引入亚微米级氧化铝来降低陶瓷材料的孔隙率,可在降低陶瓷材料热膨胀系数的同时,提高陶瓷材料的致密度、热导率以及抗弯强度,从而达到了提高陶瓷材料的抗热震性能的效果。
Description
技术领域
本发明涉及电子材料技术领域,尤其涉及一种低热膨胀系数高温共烧陶瓷(HTCC)材料及其制备方法。
背景技术
HTCC陶瓷材料中应用最广泛的是氧化铝体系陶瓷生胚料带,该材料具有热稳定性、化学稳定性、压电性、耐腐蚀性、电绝缘性、化学吸附性、生物适应性和透光性等多种有实用价值的性能和功能。
氧化铝陶瓷技术是一种比较成熟的微电子封装技术,它由92~96%氧化铝,外加4~8%的烧结助剂在1500-1700℃下烧结而成,其导体材料为钨、钼、钼-锰等难熔金属。基于氧化铝材料体系的HTCC技术成熟、介质材料成本低、热导率和抗弯强度较高,广泛应用于对可靠性要求较高的芯片封装、光学、光通信、光电子、红外器件的封装外壳。
氧化铝体系HTCC材料有下列缺点:介电常数高,影响信号传输速度的提高、导体电阻率高,信号传输损耗较大、热膨胀系数与硅相差较大,从而限制了它在芯片封装领域的大规模应用。
为此,我们提出一种低热膨胀系数高温共烧陶瓷(HTCC)材料及其制备方法。
发明内容
本发明主要是解决上述现有技术所存在的技术问题,提供一种低热膨胀系数高温共烧陶瓷(HTCC)材料及其制备方法。
为了实现上述目的,本发明采用了如下技术方案,一种低热膨胀系数高温共烧陶瓷(HTCC)材料,包括以下重量份原料:微米级氧化铝:70%~90%、亚微米级氧化铝:1%~20%、堇青石:3%~5%、β-锂霞石:3%~5%、三氧化二铬1%~3%、三氧化钼1%~3%、氧化钇0.1%~1%,流延助剂若干。
一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法,包括以下工作步骤:
S1:原料获取;
S2:原料混合;
S3:烧结成密。
作为优选,所述S1,堇青石采用天然矿物高温固相反应法、高纯氧化物高温固相反应合成法、工业或农业废料合成法和溶胶凝胶法和低温燃烧合成法制备而成。
作为优选,所述S1,用Al3+取代石英中一半的Si4+,并加入Li+进行电荷补偿,可以得到类石英结构的β-锂霞石。
作为优选,所述S2,将微米级氧化铝:70%~90%、亚微米级氧化铝:1%~20%、堇青石:3%~5%、β-锂霞石:3%~5%、三氧化二铬1%~3%、三氧化钼1%~3%、氧化钇0.1%~1%进行充分搅拌。
作为优选,所述S3,采用常压烧结工艺时,向S2混合原料中添加适量的流延助剂,使混合材料干燥形成陶瓷坯体,对陶瓷坯体进行高温烧结,高温烧结时温度控制在1500℃~1600℃之间,得到陶瓷材料。
作为优选,所述S3,采用热压烧结工艺时,将陶瓷原料粉末放置到模具内并向模具内施加压力,加压的同时加热到正常烧结温度,使陶瓷坯体在短时间内被烧结成致密、均匀、晶粒细小的陶瓷材料。
有益效果
本发明提供了一种低热膨胀系数高温共烧陶瓷(HTCC)材料及其制备方法。具备以下有益效果:
(1)、该一种低热膨胀系数高温共烧陶瓷(HTCC)材料及其制备方法,通过堇青石、β-锂霞石的引入,同时引入亚微米级氧化铝来降低陶瓷材料的孔隙率,可在降低陶瓷材料热膨胀系数的同时,提高陶瓷材料的致密度、热导率以及抗弯强度,从而提高陶瓷材料的抗热震性能,含有堇青石的陶瓷材料在1230~1280℃烧成温度范围内,热导率随烧成温度的升高而增大,这与陶瓷致密度随烧成温度的升高而增大有关,因而随着烧成温度的升高,气孔减少,热导率提高,堇青石陶瓷经过10次800℃热震温差(水冷)和40次600℃热震温差(水冷)测试后,陶瓷体尚未开裂,提高陶瓷体的品质。
(2)、该一种低热膨胀系数高温共烧陶瓷(HTCC)材料及其制备方法,通过热压烧结的方式对陶瓷材料进行高温烧结,使混合原料中无需添任何流延助剂或成型助剂,从而提高了陶瓷材料的纯度。
(3)、该一种低热膨胀系数高温共烧陶瓷(HTCC)材料及其制备方法,通过常压烧结的方式对陶瓷坯体进行烧结,使陶瓷材料烧结工艺简单容易操作,得到的成品陶瓷材料高温蠕变小、热稳定性好。
具体实施方式
下面将结合本发明实施例,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例一:一种低热膨胀系数高温共烧陶瓷(HTCC)材料,陶瓷材料按照重量百分比包括以下原料:微米级氧化铝75%、亚微米级氧化铝10%、堇青石5%、β-锂霞石5%、三氧化二铬3%、三氧化钼1.9%、氧化钇0.1%,流延助剂若干。
一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法;包括以下制备步骤:
S1:原料获取;其中堇青石采用天然矿物高温固相反应法、高纯氧化物高温固相反应合成法、工业或农业废料合成法和溶胶凝胶法和低温燃烧合成法制备而成,用Al3+取代石英中一半的Si4+,并加入Li+进行电荷补偿,可以得到类石英结构的β-锂霞石。
S2:原料混合;将微米级氧化铝75%、亚微米级氧化铝10%、堇青石5%、β-锂霞石5%、三氧化二铬3%、三氧化钼1.9%和氧化钇0.1%混合在一起,对混合原料进行充分搅拌,备用。
S3:烧结成密;使用热压烧结工艺对陶瓷坯体进行高温烧结,将陶瓷原料粉末放置到模具内并向模具内施加压力,加压的同时加热到正常烧结温度,使陶瓷坯体在短时间内被烧结成致密、均匀、晶粒细小的陶瓷材料,热压烧结工艺由于加热加压同时进行,粉料处于热塑性状态有助于颗粒的接触扩散流动并有利于传质过程的进行,因而成型压力较小,同时降低烧结温度并缩短烧结时间从而抵制晶粒长大得到晶粒细小、致密度较高、并具有较高的机械性能和较高的力学性能的产品,无需添加烧结助剂或成型助剂,方便生产超高纯度的陶瓷材料。
实施例二:一种低热膨胀系数高温共烧陶瓷(HTCC)材料,陶瓷材料按照重量百分比包括以下原料:微米级氧化铝75%、亚微米级氧化铝10%、堇青石5%、β-锂霞石5%、三氧化二铬3%、三氧化钼1.9%、氧化钇0.1%,流延助剂若干。
一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法;包括以下制备步骤:
S1:原料获取;其中堇青石采用天然矿物高温固相反应法、高纯氧化物高温固相反应合成法、工业或农业废料合成法和溶胶凝胶法和低温燃烧合成法制备而成,用Al3+取代石英中一半的Si4+,并加入Li+进行电荷补偿,可以得到类石英结构的β-锂霞石。
S2:原料混合;将微米级氧化铝75%、亚微米级氧化铝10%、堇青石5%、β-锂霞石5%、三氧化二铬3%、三氧化钼1.9%和氧化钇0.1%混合在一起,对混合原料进行充分搅拌,混合原料中添加适量流延助剂,再次对其进行搅拌,使流延助剂均匀混合到混合原料中,等待混合原料干燥成型从而成形陶瓷坯体。
S3:烧结成密;使用常压烧结工艺对陶瓷坯体进行高温烧结,高温烧结时温度控制在1500℃~1600℃之间,得到陶瓷材料。
实施例三:一种低热膨胀系数高温共烧陶瓷(HTCC)材料,陶瓷材料按照重量百分比包括以下原料:微米级氧化铝80%、亚微米级氧化铝9%、堇青石3%、β-锂霞石3%、三氧化二铬2%、三氧化钼2.5%、氧化钇0.5%,流延助剂若干。
一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法;包括以下制备步骤:
S1:原料获取;其中堇青石采用天然矿物高温固相反应法、高纯氧化物高温固相反应合成法、工业或农业废料合成法和溶胶凝胶法和低温燃烧合成法制备而成,用Al3+取代石英中一半的Si4+,并加入Li+进行电荷补偿,可以得到类石英结构的β-锂霞石。
S2:原料混合;将微米级氧化铝80%、亚微米级氧化铝9%、堇青石3%、β-锂霞石3%、三氧化二铬2%、三氧化钼2.5%、氧化钇0.5%混合在一起,对混合原料进行充分搅拌,备用。
S3:烧结成密;使用热压烧结工艺对陶瓷坯体进行高温烧结,将陶瓷原料粉末放置到模具内并向模具内施加压力,加压的同时加热到正常烧结温度,使陶瓷坯体在短时间内被烧结成致密、均匀、晶粒细小的陶瓷材料,热压烧结工艺由于加热加压同时进行,粉料处于热塑性状态有助于颗粒的接触扩散流动并有利于传质过程的进行,因而成型压力较小,同时降低烧结温度并缩短烧结时间从而抵制晶粒长大得到晶粒细小、致密度较高、并具有较高的机械性能和较高的力学性能的产品,无需添加烧结助剂或成型助剂,方便生产超高纯度的陶瓷材料。
实施例四:一种低热膨胀系数高温共烧陶瓷(HTCC)材料,陶瓷材料按照重量百分比包括以下原料:微米级氧化铝80%、亚微米级氧化铝9%、堇青石3%、β-锂霞石3%、三氧化二铬2%、三氧化钼2.5%、氧化钇0.5%,流延助剂若干。
一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法;包括以下制备步骤:
S1:原料获取;其中堇青石采用天然矿物高温固相反应法、高纯氧化物高温固相反应合成法、工业或农业废料合成法和溶胶凝胶法和低温燃烧合成法制备而成,用Al3+取代石英中一半的Si4+,并加入Li+进行电荷补偿,可以得到类石英结构的β-锂霞石。
S2:原料混合;将微米级氧化铝80%、亚微米级氧化铝9%、堇青石3%、β-锂霞石3%、三氧化二铬2%、三氧化钼2.5%、氧化钇0.5%混合在一起,对混合原料进行充分搅拌,混合原料中添加适量流延助剂,再次对其进行搅拌,使流延助剂均匀混合到混合原料中,等待混合原料干燥成型从而成形陶瓷坯体。
S3:烧结成密;使用常压烧结工艺对陶瓷坯体进行高温烧结,高温烧结时温度控制在1500℃~1600℃之间。
实施例五:一种低热膨胀系数高温共烧陶瓷(HTCC)材料,陶瓷材料按照重量百分比包括以下原料:微米级氧化铝85%、亚微米级氧化铝2%、堇青石4%、β-锂霞石4%、三氧化二铬2%、三氧化钼2.5%、氧化钇0.5%,流延助剂若干。
一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法;包括以下制备步骤:
S1:原料获取;其中堇青石采用天然矿物高温固相反应法、高纯氧化物高温固相反应合成法、工业或农业废料合成法和溶胶凝胶法和低温燃烧合成法制备而成,用Al3+取代石英中一半的Si4+,并加入Li+进行电荷补偿,可以得到类石英结构的β-锂霞石。
S2:原料混合;将微米级氧化铝85%、亚微米级氧化铝2%、堇青石4%、β-锂霞石4%、三氧化二铬2%、三氧化钼2.5%、氧化钇0.5%混合在一起,对混合原料进行充分搅拌,备用。
S3:烧结成密;使用热压烧结工艺对陶瓷坯体进行高温烧结,将陶瓷原料粉末放置到模具内并向模具内施加压力,加压的同时加热到正常烧结温度,使陶瓷坯体在短时间内被烧结成致密、均匀、晶粒细小的陶瓷材料,热压烧结工艺由于加热加压同时进行,粉料处于热塑性状态有助于颗粒的接触扩散流动并有利于传质过程的进行,因而成型压力较小,同时降低烧结温度并缩短烧结时间从而抵制晶粒长大得到晶粒细小、致密度较高、并具有较高的机械性能和较高的力学性能的产品,无需添加烧结助剂或成型助剂,方便生产超高纯度的陶瓷材料。
实施例六:一种低热膨胀系数高温共烧陶瓷(HTCC)材料,陶瓷材料按照重量百分比包括以下原料:微米级氧化铝85%、亚微米级氧化铝2%、堇青石4%、β-锂霞石4%、三氧化二铬2%、三氧化钼2.5%、氧化钇0.5%,流延助剂若干。
一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法;包括以下制备步骤:
S1:原料获取;其中堇青石采用天然矿物高温固相反应法、高纯氧化物高温固相反应合成法、工业或农业废料合成法和溶胶凝胶法和低温燃烧合成法制备而成,用Al3+取代石英中一半的Si4+,并加入Li+进行电荷补偿,可以得到类石英结构的β-锂霞石。
S2:原料混合;将微米级氧化铝85%、亚微米级氧化铝2%、堇青石4%、β-锂霞石4%、三氧化二铬2%、三氧化钼2.5%、氧化钇0.5%混合在一起,对混合原料进行充分搅拌,混合原料中添加适量流延助剂,再次对其进行搅拌,使流延助剂均匀混合到混合原料中,等待混合原料干燥成型从而成形陶瓷坯体。
S3:烧结成密;使用常压烧结工艺对陶瓷坯体进行高温烧结,高温烧结时温度控制在1500℃~1600℃之间,得到陶瓷材料。
通过堇青石、β-锂霞石的引入,同时引入亚微米级氧化铝来降低陶瓷材料的孔隙率,可在降低陶瓷材料热膨胀系数的同时,提高陶瓷材料的致密度、热导率以及抗弯强度,从而提高陶瓷材料的抗热震性能,含有堇青石的陶瓷材料在1230~1280℃烧成温度范围内,热导率随烧成温度的升高而增大,这与陶瓷致密度随烧成温度的升高而增大有关,因而随着烧成温度的升高,气孔减少,热导率提高,堇青石陶瓷经过10次800℃热震温差(水冷)和40次600℃热震温差(水冷)测试后,陶瓷体尚未开裂,提高陶瓷体的品质。
通过热压烧结的方式对陶瓷材料进行高温烧结,使混合原料中无需添任何流延助剂或成型助剂,从而提高了陶瓷材料的纯度。
通过常压烧结的方式对陶瓷坯体进行烧结,使陶瓷材料烧结工艺简单容易操作,得到的成品陶瓷材料高温蠕变小、热稳定性好。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (7)
1.一种低热膨胀系数高温共烧陶瓷(HTCC)材料,其特征在于:包括以下重量份原料:微米级氧化铝:70%~90%、亚微米级氧化铝:1%~20%、堇青石:3%~5%、β-锂霞石:3%~5%、三氧化二铬1%~3%、三氧化钼1%~3%、氧化钇0.1%~1%,流延助剂若干。
2.一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法,其特征在于:包括以下工作步骤:
S1:原料获取;
S2:原料混合;
S3:烧结成密。
3.根据权利要求2所述的一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法,其特征在于:所述S1,堇青石采用天然矿物高温固相反应法、高纯氧化物高温固相反应合成法、工业或农业废料合成法和溶胶凝胶法和低温燃烧合成法制备而成。
4.根据权利要求2所述的一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法,其特征在于:所述S1,用Al3+取代石英中一半的Si4+,并加入Li+进行电荷补偿,可以得到类石英结构的β-锂霞石。
5.根据权利要求2所述的一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法,其特征在于:所述S2,将微米级氧化铝:70%~90%、亚微米级氧化铝:1%~20%、堇青石:3%~5%、β-锂霞石:3%~5%、三氧化二铬1%~3%、三氧化钼1%~3%、氧化钇0.1%~1%进行充分搅拌。
6.根据权利要求2所述的一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法,其特征在于:所述S3,采用常压烧结工艺时,向S2混合原料中添加适量的流延助剂,使混合材料干燥形成陶瓷坯体,对陶瓷坯体进行高温烧结,高温烧结时温度控制在1500℃~1600℃之间,得到陶瓷材料。
7.根据权利要求2所述的一种低热膨胀系数高温共烧陶瓷(HTCC)材料的制备方法,其特征在于:所述S3,采用热压烧结工艺时,将陶瓷原料粉末放置到模具内并向模具内施加压力,加压的同时加热到正常烧结温度,使陶瓷坯体在短时间内被烧结成致密、均匀、晶粒细小的陶瓷材料。
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004177587A (ja) * | 2002-11-26 | 2004-06-24 | Taiheiyo Cement Corp | 低熱膨張ミラーおよびその製造方法 |
JP2006232667A (ja) * | 2006-04-03 | 2006-09-07 | Kyocera Corp | 低熱膨張性セラミックスおよびそれを用いた半導体製造装置用部材 |
JP2007314363A (ja) * | 2006-05-24 | 2007-12-06 | Nippon Steel Materials Co Ltd | 低熱膨張セラミックス材料およびその製造方法 |
CN101370748A (zh) * | 2005-05-09 | 2009-02-18 | 康宁股份有限公司 | 矿物聚合物复合材料及由其形成的结构物 |
CN102276243A (zh) * | 2010-04-30 | 2011-12-14 | 泰勒斯公司 | 基于β-锂霞石和氧化物的陶瓷复合材料,和制造所述复合材料的方法 |
CN106518146A (zh) * | 2016-11-16 | 2017-03-22 | 福建省德化荣信陶瓷有限公司 | 利用白瓷废料合成堇青石陶瓷及其制备方法 |
CN107032774A (zh) * | 2017-03-15 | 2017-08-11 | 中国兵器科学研究院宁波分院 | 高致密化低热膨胀陶瓷制备方法 |
CN107434410A (zh) * | 2017-08-28 | 2017-12-05 | 中国兵器工业第五二研究所烟台分所 | 一种堇青石陶瓷粉体的制备方法 |
CN109437863A (zh) * | 2018-12-28 | 2019-03-08 | 江苏省宜兴电子器件总厂有限公司 | 一种高强度htcc陶瓷材料及其制备方法 |
CN115196952A (zh) * | 2022-06-08 | 2022-10-18 | 山西超牌煅烧高岭土有限公司 | 一种堇青石的制备方法 |
-
2023
- 2023-02-14 CN CN202310108525.6A patent/CN116332627A/zh active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004177587A (ja) * | 2002-11-26 | 2004-06-24 | Taiheiyo Cement Corp | 低熱膨張ミラーおよびその製造方法 |
CN101370748A (zh) * | 2005-05-09 | 2009-02-18 | 康宁股份有限公司 | 矿物聚合物复合材料及由其形成的结构物 |
JP2006232667A (ja) * | 2006-04-03 | 2006-09-07 | Kyocera Corp | 低熱膨張性セラミックスおよびそれを用いた半導体製造装置用部材 |
JP2007314363A (ja) * | 2006-05-24 | 2007-12-06 | Nippon Steel Materials Co Ltd | 低熱膨張セラミックス材料およびその製造方法 |
CN102276243A (zh) * | 2010-04-30 | 2011-12-14 | 泰勒斯公司 | 基于β-锂霞石和氧化物的陶瓷复合材料,和制造所述复合材料的方法 |
CN106518146A (zh) * | 2016-11-16 | 2017-03-22 | 福建省德化荣信陶瓷有限公司 | 利用白瓷废料合成堇青石陶瓷及其制备方法 |
CN107032774A (zh) * | 2017-03-15 | 2017-08-11 | 中国兵器科学研究院宁波分院 | 高致密化低热膨胀陶瓷制备方法 |
CN107434410A (zh) * | 2017-08-28 | 2017-12-05 | 中国兵器工业第五二研究所烟台分所 | 一种堇青石陶瓷粉体的制备方法 |
CN109437863A (zh) * | 2018-12-28 | 2019-03-08 | 江苏省宜兴电子器件总厂有限公司 | 一种高强度htcc陶瓷材料及其制备方法 |
CN115196952A (zh) * | 2022-06-08 | 2022-10-18 | 山西超牌煅烧高岭土有限公司 | 一种堇青石的制备方法 |
Non-Patent Citations (1)
Title |
---|
钱潜等: "负热膨胀材料及β-锂霞石研究进展及应用前景", 《建材世界》, vol. 43, no. 2, pages 14 - 17 * |
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