CN116190267A - 减少背侧基板接触的基板传送机构 - Google Patents

减少背侧基板接触的基板传送机构 Download PDF

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Publication number
CN116190267A
CN116190267A CN202310059058.2A CN202310059058A CN116190267A CN 116190267 A CN116190267 A CN 116190267A CN 202310059058 A CN202310059058 A CN 202310059058A CN 116190267 A CN116190267 A CN 116190267A
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carrier
substrate
processing chamber
chamber
lift pins
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CN202310059058.2A
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Inventor
石井才人
理查德·O·柯林斯
理查德·吉利朱姆
亚历山大·伯杰
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Applied Materials Inc
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Applied Materials Inc
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Abstract

公开一种基板处理系统，包括耦接到传送腔室的基板输入/输出腔室，以及耦接到传送腔室的一个或多个处理腔室，其中基板输入/输出腔室包括多个堆叠载体保持器，并且载体保持器中的一者包括用于在其上支撑基板的基板载体。

Description

减少背侧基板接触的基板传送机构
本申请是申请日为2019年1月17日、申请号为201980011151.8、发明名称为“减少背侧基板接触的基板传送机构”的发明专利申请的分案申请。
技术领域
本公开内容一般涉及用于在处理工具中传送基板的方法及设备。更具体而言，本公开内容涉及用于在处理工具的腔室或多个腔室中传送基板的方法及设备。
背景技术
超大规模集成(ULSI)电路可以包括形成于半导体基板(例如，硅(Si)基板)上的超过一百万个电子装置(例如，晶体管)，并配合以在装置内执行各种功能。
许多已知的热处理通常用于晶体管及其他电子装置的制造。这些处理通常在具有多个腔室的工具(例如，群集工具)中执行。在这些处理期间，为了实现所期望的产量，最重要的顾虑是颗粒产生及/或基板的损伤。然而，颗粒和/或损伤的一个来源发生于基板传送期间(即，当基板在工具上的特定处理腔室内移动时，或者当基板从工具的一个腔室移动到工具的另一腔室时)。
已经确定，在传送期间接触基板的背侧(即，与沉积接收侧相对的一侧)的已知的基板提升销为颗粒和/或基板损伤的一个原因。举例而言，基板与提升销的接触可能刮伤基板和/或造成由接触所产生的颗粒。由接触所产生的颗粒可能污染腔室、基板、或后续基板，所有这些情况都会降低产量。
因此，需要一种用于在工具中传送基板的改善方法及设备。
发明内容
本公开内容一般涉及用于在处理工具中传送基板的方法及设备。更具体而言，本公开内容涉及用于在处理工具的腔室或多个腔室中传送基板的方法及设备。
在一个实施方式中，公开了一种基板处理系统，包括耦接到传送腔室的基板输入/输出腔室，以及耦接到传送腔室的一个或更多个处理腔室，其中基板输入/输出腔室包括多个堆叠载体保持器，而载体保持器中的一者包括用于在其上支撑基板的基板载体。
在另一实施方式中，公开了一种装载锁定腔室，包括台板、多个载体保持器、多个支撑构件、及载体，该台板具有嵌入其中的热传递元件，多个载体保持器围绕台板定位，多个支撑构件从堆叠载体保持器中的每一者延伸，并且载体定位于多个堆叠载体保持器中的一者的支撑构件上。
在另一实施方式中，公开了一种处理腔室，包括基座与基板支撑结构，基座具有相邻于其周边而形成的沟槽，而基板支撑结构包括多个载体升降销，其中载体升降销中的每一者容纳于与沟槽相邻的开口中。
附图说明
为使本公开内容的上述特征可详细地被理解，可参照实施方式获得简短概要如上的本公开内容的更特定描述，这些实施方式的一些绘示于附图中。然而，应注意，附图仅图示本公开内容的典型实施方式，而非视为对本公开内容的保护范围的限定，本公开内容可允许其他等效实施方式。
图1描绘适合于实践本公开内容的示例性处理设备的示意图。
图2为根据本公开内容的一个实施方式的装载锁定腔室的横截面图。
图3A描绘装载锁定腔室中的载体保持器的一个实施方式。
图3B为第一载体保持器与第二载体保持器的另一实施方式的等距视图。
图4A至图4G为图示图1的工厂接口、装载锁定腔室、及传送腔室之间的基板传送顺序的各种视图。
图5A至图5C为冷却台板以及与装载锁定腔室的冷却台板相关联的其他部件的各种视图。
图6为冷却台板与载体的一部分的示意性横截面图。
图7A至图7D为图示装载锁定腔室的细节的各种视图。
图8为经由柔性连接构件耦接到支撑板的电机的放大剖面图。
图9A及图9B为图示真空系统的细节的装载锁定腔室的等距视图。
图10为根据一个实施方式的处理腔室的示意性剖面图。
图11为图10的基座的等距视图。
图12为图10的基座与载体的一部分的放大剖面图。
为促进理解，各图中尽可能使用相同的附图标记指示相同的元件。预期一个实施方式的元件和特征可有利地并入其他实施方式，而无需赘述。
具体实施方式
本公开内容提供在处理工具中传送基板的方法及设备。更特定言之，使用最小化与基板的主表面的接触的基板传送机构来传送基板。
图1为包括适于实践本发明的基板传送机构的一个实施方式的示例性处理系统100的示意性顶视平面图。处理系统100包括基板输入/输出腔室122、真空密封处理平台104、工厂接口102、及系统控制器144。基板输入/输出腔室122可以是装载锁定腔室。在一个实施方式中，处理系统100可以是可从位于美国加利福尼亚州圣克拉拉的应用材料公司商业取得的
Figure BDA0004060952550000031
整合处理系统。预期其他处理系统(包括来自其他制造商的处理系统)可以适于从本公开内容受益。
平台104包括多个处理腔室110、112、132、128、120以及至少一个耦接到真空基板传送腔室136的基板输入/输出腔室122。图1图示了两个基板输入/输出腔室122。工厂接口102通过基板输入/输出腔室122耦接到传送腔室136。
在一个实施方式中，工厂接口102包含至少一个对接站108以及至少一个工厂接口机器人114，以便于传送基板。对接站108经构造以接受一个或更多个前开式标准仓(FOUP)。图1的实施方式图示了两个FOUP 106A、106BB。具有设置于机器人114的一端上的叶片116的工厂接口机器人114经构造以将基板从FOUP 106A、106BB穿过基板输入/输出腔室122传送到处理平台104以进行处理。
基板输入/输出腔室122中的每一者具有耦接到工厂接口102的第一端口以及耦接到传送腔室136的第二端口。基板输入/输出腔室122耦接到压力控制系统(未图示)，从而对基板输入/输出腔室122进行抽空及通气，以促进在传送腔室136的真空环境与工厂接口102的实质周围(例如，大气)环境之间递送基板。
传送腔室136具有设置在其中的真空机器人130。真空机器人130具有叶片134，从而能够在基板输入/输出腔室122与处理腔室110、112、132、128、120之间传送基板124。
系统控制器144耦接至处理系统100。系统控制器144使用系统100的处理腔室110、112、132、128、120的直接控制来控制系统100的操作，或者通过控制与处理腔室110、112、132、128、120及系统100相关联的计算机(或控制器)来控制系统100的操作。在操作中，系统控制器144能够从各别腔室及系统控制器144进行数据收集及反馈，以将系统100的性能最佳化。
系统控制器144通常包括中央处理单元(CPU)138、存储器140、及支持电路142。CPU138可以是能够用于工业环境中的任何形式的通用电脑处理器中的一者。支持电路142通常耦接到CPU 138，并且可以包含高速缓存、时钟电路、输入/输出子系统、电源、及类似者。当由CPU 138执行软件例程时，CPU 138转换成专用计算机(控制器)144。软件例程也可以通过第二控制器(未图示)储存及/或执行，第二控制器位于系统100的远端。
图2为根据本公开内容的一个实施方式的基板输入/输出腔室122的横截面图。基板输入/输出腔室122通常包含腔室主体202、第一载体保持器204B、第二载体保持器204A、温度控制台座240、及可选择的加热器模块270。第一载体保持器204B及第二载体保持器204A中的每一者包括由载体206支撑的基板124。腔室主体202可以由单一材料主体(例如，铝)制成。腔室主体202包括第一侧壁208、第二侧壁210、侧壁242(图2中仅图示一个)、顶部214、及底部216，以定义腔室容积218。窗口(未图示)可以设置于腔室主体的顶部214中，并且通常由石英构成。当包括加热器模块270时，加热器模块270至少部分覆盖腔室主体202的顶部214。
可以控制腔室容积218的压力，使得基板输入/输出腔室122可被抽空以基本匹配传送腔室136的环境，并且可被通气以基本匹配工厂接口102的环境。腔室主体202包括一个或多个通气通路230及泵送通路232。在进行通气及抽空期间，由于通气通路230及泵送通路232的位置，基板输入/输出腔室122内的流动基本上是分层流动的，并经构造以最小化颗粒污染。
泵送通路232耦接至真空泵236。真空泵236具有低振动，以最小化定位于基板输入/输出腔室122内的保持器204B、204A上的基板124的扰动，同时通过将基板输入/输出腔室122与泵236之间的流体路径最小化至通常小于3英尺来提高抽空效率及时间。
第一装载端口238设置于腔室主体202的第一侧壁208中，以允许基板124在基板输入/输出腔室122与工厂接口102之间传送。第一狭缝阀244选择性密封第一装载端口238，以将基板输入/输出腔室122与工厂接口102隔离。第二装载端口239设置于腔室主体202的第二侧壁210中，以允许基板124在基板输入/输出腔室122与传送腔室136之间传送。与第一狭缝阀244基本类似的第二狭缝阀246选择性密封第二装载端口239，以将基板输入/输出腔室122与传送腔室136的真空环境隔离。
第一载体保持器204B同心耦接到第二载体保持器204A(即，堆叠于第二载体保持器204A顶部)，第二载体保持器204A设置于腔室底部216上方。载体保持器204B、204A通常安装到支撑件220，支撑件220耦接到延伸穿过腔室主体202的底部216的轴282。通常，每一载体保持器204B、204A经构造以保持定位于相应载体206上的一个基板。轴282耦接到设置于基板输入/输出腔室122的外部的提升机构296，提升机构296控制腔室主体202内的载体保持器204B及204A的升降。波纹管284耦接于支撑件220与腔室主体202的底部216之间，并围绕轴282设置，以在第二载体保持器204A与底部216之间提供柔性密封，从而防止从腔室主体202泄漏或泄露进入腔室主体202，并且有助于载体保持器204B、204A的升高及降低，而不会损害基板输入/输出腔室122内的压力。
第一载体保持器204B用于将来自工厂接口102的未处理的基板保持在第一载体206上，而第二载体保持器204A用于将从传送腔室136返回的经处理的基板(例如，经蚀刻的基板)保持在第二载体206上。
图3A描绘基板输入/输出腔室122中的载体保持器204B、204A的一个实施方式。为清楚起见，图3A并未图示载体206。第二载体保持器204A通常通过支撑件220保持于腔室主体202的底部216上方。第一支座308设置于每一构件304、306之间，以将第二载体保持器204A维持成与支撑件220间隔开的关系。第二支座310设置于第一与第二保持器204B、204A之间，以维持第一与第二保持器204B、204A之间的间隔开的关系。当将基板从载体保持器204B、204A上取回和将基板放置在载体保持器204B、204A上时，支座308、310允许传送及工厂接口机器人130、114的叶片134、116通过其间。每一保持器204B、204A可替代地包括“L形”构造，“L形”构造包括维持保持器204B、204A与基板输入/输出腔室122的相邻部件之间的间隔开的关系的部分。
每一载体保持器204B、204A包括第一构件304与第二构件306。每一构件304、306包括弯曲的内部部分312，弯曲的内部部分312具有径向向内延伸的唇部314。弯曲的内部部分312经构造以允许基板124搁置于唇部314上。弯曲的内部部分312在其间捕获基板124，从而防止基板124从唇部314脱落。第一构件304面向第二构件306，其中每一者的弯曲的内部部分312指向另一者。第一构件304与第二构件306位于温度控制台座240的相对侧上，温度控制台座240设置于腔室122内的中心，并从腔室122的底部216突出。
图3B为第一载体保持器204B与第二载体保持器204A的另一实施方式的等距视图。第一载体保持器204B及第二载体保持器204A中的每一者图示为支撑载体206。支撑构件320图示为位于载体206与支座308、310之间。载体206可以手动传送到基板输入/输出腔室122，以初始化系统。举例而言，通过打开顶部214(图2所示)或穿过第一装载端口238或第二装载端口239中的一者，可以将载体206放置于支座308、310上。下文将详细描述定位处理。
支撑构件320中的每一者可以由石英材料制成。支撑构件320中的每一者经由过盈配合或其他合适的耦接方法来与支座308、310对接。支座308、310可以由金属材料(例如，不锈钢)制成。支座308、310可以分开约1英寸的节距或距离322。载体206中的每一者可以由陶瓷材料(例如，碳化硅)制成。温度控制台座240的上表面与支座308中的载体206的下表面之间的距离324可以是约0.75英寸。
返回参照图2，温度控制台座240通过位于腔室202的中心的支撑件278而耦接到腔室主体202的底部216。支撑件278可以是中空的，或者可以包括穿过其中的通道，以允许流体、电信号、传感器、及类似者耦接到台座240。轴282及提升机构296定位于支撑件278的周边。
温度控制台座240具有温度控制表面292，以用于对温度控制表面292附近的基板进行热控制。温度控制台座240包括热传递元件286，热传递元件286可以是循环水套、热电装置(例如，珀耳帖装置)、或是可用于控制温度控制表面292的温度的其他结构。举例而言，热传递元件286可以包括一个或多个管件，该一个或多个管件设置于冷却台板280中并流体耦接到冷却流体源(未图示)，以让冷却流体循环通过冷却台板280。
具有与其耦接的载体保持器204B、204A的支撑件220可以降低到第一位置，在第一位置处，冷却台板280的上表面292与由第二载体保持器204A支撑的基板紧密靠近或接触。在第一位置处，冷却台板280可以用于调节设置于冷却台板280上(或附近)的基板的温度。举例而言，通过在冷却台板280的上表面292上支撑基板，从处理返回的基板可以在抽空期间在基板输入/输出腔室122中冷却。热能从基板通过冷却台板280传送到热传递元件286，以冷却基板。在冷却基板之后，载体保持器204B、204A可以朝向腔室主体202的顶部214升高，以允许机器人130、114接取位于第二基板支撑件204A中的基板。可选择地，保持器204B、204A可以降低到某一位置，在该位置处，上表面292与由第一载体保持器204B支撑的基板接触或紧密靠近。在此位置处，冷却台板280可以用于热调节及加热基板。
图4A至图4G为图示图1的工厂接口102、基板输入/输出腔室122、及传送腔室136之间的基板传送顺序的各种视图。图4A为基板输入/输出腔室122的示意性侧视图，图示了延伸穿过基板输入/输出腔室122的第一装载端口238的第一机器人叶片400。第一机器人叶片400图示为支撑来自图1的工厂接口102的未处理的基板405。第一机器人叶片400可以是图1所示的工厂接口机器人114的叶片116中的一者。
除了第一装载端口238之外，基板输入/输出腔室122也包括冷却台板280、第二载体保持器204A、第一载体保持器204B、及经由支撑构件320设置于保持器204B、204A上的载体206。此外，提升销410(其中一者图示为横截面)延伸通过冷却台板280。提升销410中的每一者耦接到致动器411，致动器411使提升销410在Z方向上移动。波纹管组件416设置于冷却台板280与致动器411之间。冷却台板280也设置多个轴衬417，以促进提升销410在其中的垂直移动。
提升销410中的每一者经构造以在基板405的边缘上接触基板405的下表面。提升销410中的每一者包括设置于轴413的端部上的尖端412。尖端412由比轴413的材料更软的材料制成。举例而言，轴413可以由金属材料(例如，不锈钢)制成，而尖端412可以由聚合物材料制成。用于尖端412的较软材料防止或最小化基板405的背侧的刮伤。用于尖端412的示例性材料系为含氟聚合物，含氟聚合物包括聚四氟乙烯(PTFE)、氟化乙烯丙烯(FEP)、全氟烷氧基聚合物(PFA)、或其他合适的塑胶材料。尖端412可以设计成经由过盈配合而耦接到相应的轴413。在图4A所示的实施方式中，尖端412包括突出部分414，突出部分414紧密配适到形成于轴413中的凹陷415。
第一机器人叶片400在X方向上穿过第一装载端口238延伸进入基板输入/输出腔室122。第一机器人叶片400经编程以将基板405定位成与设置于第二载体保持器204A上的载体206同心。
图4B及图4C为当第一机器人叶片400如图4A所示定位时的基板输入/输出腔室122的示意性横截面图。除了第一机器人叶片400、载体206、及基板405之外，热传递元件286更清楚地图示于冷却台板280内。可以使用盖板428将热传递元件286密封到冷却台板280中。盖板428可以是圆形的，并由铝材料制成。
再次参照图4A，在此传送处理期间，第一机器人叶片400与基板输入/输出腔室122中的任何其他部件之间的最小间距为约0.12英寸。举例而言，支撑构件320的下表面与基板405的上表面之间的距离440系为约0.12英寸；基板405的上表面与第一装载端口238的表面之间的距离442系为约0.16英寸；基板405的下表面与尖端412的上表面之间的距离444系为约0.2英寸；并且尖端412的上表面与冷却台板280的上表面之间的距离446系为约0.60英寸或更大。
图4D为描绘图4A至图4C的描述所讨论的传送处理的另一部分的示意性侧视图。图4D图示从第一机器人叶片400传送到提升销410的基板405。可以通过第一机器人叶片400的垂直移动(Z方向)来实现将基板405传送到提升销410。在此位置，第一机器人叶片400的上表面与基板405的下表面之间的距离448可为约0.2英寸。在此位置，第一机器人叶片400的下表面与载体206的上表面之间的距离450可为约0.13英寸。在此位置，第一机器人叶片400可以从基板输入/输出腔室122缩回。
图4E系为描绘图4A至图4D的描述所讨论的传送处理的另一部分的示意性侧视图。图4E图示从提升销410传送到设置于第二载体保持器204A上的载体206的基板405。在此视图中，在Z方向上移动保持器204B、204A的支撑件220(图2所示)将处于其最高位置。支撑件220的最高位置使两个保持器204B、204A朝向顶部214升高。此外，如图2所示，提升销410缩回(沿着Z方向降低)，以允许来自传送腔室136的第二机器人叶片452进入第二装载端口239。第二机器人叶片452可以是图1所示的真空机器人130的叶片134。
第二机器人叶片452用于经由传送腔室136将基板405以及载体206传送到图1所示的处理腔室110、112、132、128、120中的一者或多者。在图4E所示的位置中，顶部214的下表面与设置于第一载体保持器204B上的载体206之间的距离454为约0.25英寸，而第二机器人叶片452的上表面与载体206的下表面之间的距离456可为约0.19英寸。为了将基板405传送到第二机器人叶片452，支撑件220(图2)沿着Z方向降低大于距离456的距离。此后，具有载体206及其上的基板405的第二机器人叶片452可以沿着X方向从第二装载端口239缩回。
图4F为描绘图4A至图4E的描述所讨论的传送处理的另一部分的示意性侧视图。图4F图示由载体206支撑的来自传送腔室136(图1所示)的经处理的基板458，而载体206由第二机器人叶片452支撑。在此传送处理中，支撑件220位于最低位置，而提供顶部214与第一载体保持器204B之间的空间。此外，提升销410缩回。基板458图示于图4F中，其中载体206与第一载体保持器204B同心对准。
图4G为描绘图4A至图4F的描述所讨论的传送处理的另一部分的示意性侧视图。在图4F及图4G所示的位置之间，提升销410从图4F所示的位置垂直(沿着Z方向)致动到图4G所示的位置，并图示由提升销410支撑的基板458。此外，载体206由第一载体保持器204B支撑。如图4G所示，一旦基板458由提升销410支撑，则第一机器人叶片400横向(沿着X方向)和/或垂直(沿着Z方向)致动，以从提升销410移除基板458。一旦基板458由第一机器人叶片400支撑，则第一机器人叶片400(其上具有基板458)可以移动穿过第一装载端口238，并且基板458可以放置于工厂接口102中。
图5A至图5C为冷却台板280以及与基板输入/输出腔室122的冷却台板280相关联的其他部件的各种视图。图5A为冷却台板280、第一载体保持器204B、及耦接到支撑件220的第二载体保持器204A的等距视图。图5B为冷却台板280、载体206中的一者、及支撑件220的等距局部剖面图。
在图5A中，多个定位销500图示为在冷却台板280的周边区域中耦接到冷却台板280。定位销500中的每一者临时定位于围绕冷却台板280的周边而形成的开口505内(如图5B所示)，并用于将载体206居中或定位至第一载体保持器204B与第二载体保持器204A。当定位销500定位于第一或第二载体保持器204A或204B中的一者时，定位销500定义载体206的外边缘位置。举例而言，载体206可以手动传送进入基板输入/输出腔室122，而定位销500用于相对于冷却台板280定位载体206。当载体206定位于第一或第二载体保持器204A、204B时，定位销500紧密限制每一载体206的外边缘，以定位载体206来进行处理。一旦将载体206定位，则可以移除定位销500。定位销500中的每一者可以由石英材料制成。
图5A也图示耦接到冷却台板280的多个对准垫510。尽管图5A仅图示两个垫510，但是另一垫被第一载体保持器204B及第二载体保持器204A隐藏。
垫510的横截面图示于图5B及图5C。垫510中的每一者可以用于防止载体206与冷却台板280之间的接触。此外，由于冷却期间的载体206由垫510支撑，所以防止基板(未图示)与台板280之间的接触。举例而言，随着基板将搁置于载体206的基板接收表面515上，垫510在冷却台板280的上表面与载体206的基板接收表面515之间提供间隙520。载体206的基板接收表面515将与安装其上的基板的下表面重合，而间隙520将从基板的下表面延伸到冷却台板280的上表面。类似于定位销500，垫510由石英材料制成。
图5C为冷却台板280、多个垫510中的一个垫510、及载体206的放大剖面图。垫510中的每一者的横截面通常为“T”形，而每一垫510包括平坦肩部530，平坦肩部530围绕从肩部530延伸的突起535。在肩部530与突起535之间设置有倾斜表面540。此处的突起535为截头圆锥体。倾斜表面540可以使载体206相对于冷却台板280居中。垫510中的每一者也包括销部分545，销部分545插入形成于冷却台板280中的开口550。肩部530适配到冷却台板280的凹陷凸缘555中。肩部530的高度560略大于凹陷凸缘555的深度，以提供间隙520。
图6为冷却台板280与载体206的一部分的示意性横截面图。载体206具有支撑于其基板接收表面515上的基板600。载体206包括圆形主体605，圆形主体605具有形成于主体605中并与基板接收表面515相对的凹陷沟槽610。此处，圆形主体605为环形。与凹陷沟槽610相邻的周边边缘615与垫510的肩部530接触(均图示于图5C)。周边边缘615与肩部530(图5C所示)之间的接触提供间隙520。倾斜边缘620将周边边缘615中的一者(例如，外周边边缘)与外壁625连接。倾斜边缘620可与垫510的倾斜表面540接触(均图示于图5C)。
图7A至图7D为图示基板输入/输出腔室122的细节的各种视图。图7A为基板输入/输出腔室122的等距底视图，以图示移动提升销410的基板提升机构700。基板提升机构700包括支撑板702，支撑板702支撑电机704，电机704耦接到冷却台板280与多个提升销组件706。也图示具有多个主要真空管710的真空系统708。主要真空管710耦接至冷却台板280，并用于抽空与设置于其中的提升销410相关联的通路。真空系统708与主要真空管710彼此流体连通，并将在图9A中更详细地描述。
图7B及图7C为冷却台板280的一部分的侧剖面图，以图示通过基板提升机构700所提供的移动。图7B图示处于伸出位置的提升销410，而图7C图示处于缩回位置的提升销410。图7D为图7B的基板提升机构700的放大剖面图。尽管图7B至图7D仅图示一个提升销410与相关联的基板提升机构700，但应注意，支撑板702上的多个提升销410中的每一提升销410将具有相关联的基板提升机构700。
如图7B至图7D所示，提升销组件706包括设置于冷却台板280与底座壳体711之间的波纹管708，底座壳体711耦接到支撑板702。波纹管708可以由具有低热膨胀系数的高强度的金属合金制成。在一个实例中，波纹管708可以是Ni-Mo-Cr合金(例如，以商品名
Figure BDA0004060952550000111
销售的合金材料)。密封件709(例如，O形环)可以设置于底座壳体711与支撑板702之间的界面处。安装板713可以耦接于冷却台板280与波纹管708之间。安装板713可以经由紧固件耦接到冷却台板280。
提升销410的轴413的一部分设置于底座壳体711中。举例而言，如图7B及图7D最佳地图示，轴413的与尖端412相对的一端耦接到夹持构件712。夹持构件712可以由可在高热环境中使用的塑胶材料(例如，以商品名
Figure BDA0004060952550000121
贩售的聚酰亚胺系聚合物)制成。夹持构件712系耦接到保持器壳体714。保持器壳体714在夹持构件712的一端接收夹持构件712的唇部716。保持器壳体714的相对端耦接到底座销718。底座销718可以耦接到支撑板702。用于底座销718、底座壳体711、及保持器壳体714的材料包括金属(例如，不锈钢)。
再次参照图7B及图7C，图示了设置成围绕提升销410中的一者的轴衬417。轴衬417中的每一者可以由可在高热环境中使用的塑胶材料制成。轴衬417中的每一者可以由内部固定器724(例如，卡环固定器)固定。限制构件726(可以是螺栓或螺纹轴)图示为耦接到支撑板702。如图7B所示，可以调整限制构件726的高度(例如，在Z方向上)，以限制提升销410沿着Z方向的移动。
图8为经由柔性连接构件800耦接到支撑板702的电机704的放大剖面图。柔性连接构件800包括底座805，底座805通过多个底座紧固件810耦接到支撑板702。底座紧固件810中的每一者穿过形成于支撑板702中的过大孔洞815。过大孔洞815中的每一者的直径大于底座紧固件810的直径，其允许底座紧固件810穿过孔洞815而紧固到底座805。底座805包括贯通狭槽820，以接收中心紧固件825的一部分。中心紧固件825将电机704耦接到底座805。贯通狭槽820暴露中心紧固件825的头部830的至少一部分，而使得中心紧固件825能够旋转，以沿着Z方向移动中心紧固件825。当致动时，柔性连接构件800在支撑板702与底座805的周边区域之间提供几毫米的间隙835。
图9A及图9B为基板输入/输出腔室122的等距视图，以图示真空系统708的细节。图9A为基板输入/输出腔室122的等距底视图，而图9B为基板输入/输出腔室122的底部的等距剖面图。
在图9A及图9B中，支撑板702设置于冷却台板280下方，而电机704以及多个提升销组件706耦接于支撑板702和冷却台板280之间。图9A图示多个主要真空管710。每一主要真空管710与相应的提升销组件706相关联，并通过一个或更多个次要真空管905耦接到前端线路900。隔离阀910图示为定位于主要真空管710与前端线路900之间。
如图9B所示，主要真空管710中的每一者(图9B仅图示一个)通过钻孔920流体耦接到提升销通路915(两者都形成于冷却台板280中)。举例而言，提升销通路915为形成于冷却台板280的主表面之间的贯通孔洞，而钻孔920可以是沿着提升销通路915的长度形成至冷却台板280的一个主表面的通路，并与主要真空管710对接。在操作中，真空系统708耦接到前端线路900，前端线路900耦接到真空泵236(图2所示)。尽管真空泵236用于抽空提升销通路915，但也用于抽空基板输入/输出腔室122的腔室容积218。
图10为根据一个实施方式的处理腔室1000的示意性剖面图。处理腔室1000可以是图1所示的处理腔室110、112、132、128、120中的一者或多者。
基座1006位于处理腔室1000内，并在上圆顶1028与下圆顶1014之间。处理腔室1000可用于处理一个或多个基板(包括将材料沉积在基板124的上表面上)。处理腔室1000可以包括辐射加热灯1002的阵列，以用于加热设置于处理腔室1000内的基座1006的背侧1004以及其他部件。本文使用的“基座”定义为吸收辐射能量并将所吸收的辐射能量转换成加热放置于基座上或附近的另一物体的热能的物体。尽管处理腔室1000包括基座1006，但是本文所述的载体206的实施方式可以与其他类型的基板支撑件或台座一起使用，并且可以与基座1006类似地构造。上圆顶1028、下圆顶1014、及设置于上圆顶1028与下圆顶1014之间的基环1036大致定义处理腔室1000的内部区域。如本文所述，具有面向上的装置侧1016并定位于载体206上的基座1006的前侧1010上的基板124可以被带入处理腔室1000，并通过装载端口1003定位于基座1006上。可以通过基座支撑结构1090支撑基座1006。基座支撑结构1090包括通过中心轴1032支撑的至少三个第一支撑臂1092(仅图示两个)。在一个实施方式中，降低中心轴1032上的基座1006，以允许载体提升销1005与载体206接触。载体提升销1005穿过第一支撑臂1092中的孔洞与基座1006中的孔洞，从基座1006提高载体206与基板124。载体206可以设置在形成于基座1006的前侧1010中的凹部或沟槽1025中。如图所示，基座1006在位于处理位置时将处理腔室1000的内部空间划分为位于基板124上方的处理气体区域1056以及位于基座1006下方的净化气体区域1058。基座1006可以旋转，并沿着上下方向1034移动基板124及载体206。灯1002可经构造以包括灯泡1041，并用于加热基板124。光学高温计1018可以用于基板124上的温度量测/控制。灯1002可以包含在灯头1045内。举例而言，灯头1045可以在处理期间或在处理之后通过引入位于灯1002之间的通道1049的冷却流体来冷却。从处理气体供应源1072供应的处理气体通过形成于基环1036中的处理气体入口1074引入处理气体区域1056。处理气体通过位于与处理气体入口1074相对的处理腔室1000的侧边上的气体出口1078离开处理气体区域1056(沿着流动路径1075)。可以通过与气体出口1078耦接的真空泵1080来通过气体出口1078促进处理气体的移除。可以围绕基座1006任选地设置圆形屏蔽1067或预热环。基座1006也可以围绕有衬垫组件1063。屏蔽1067防止或最小化从灯1002至基板124的装置侧1016的热/光噪声的泄漏，同时提供用于处理的预热区域。衬垫组件1063在处理空间(即，处理气体区域1056与净化气体区域1058)与处理腔室1000的金属壁之间发挥屏蔽的作用。金属壁可以与前驱物反应，并造成在处理空间中的污染。屏蔽1067及/或衬垫组件1063可从CVD SiC、涂覆有SiC的烧结的石墨、生长SiC、不透明的石英、经涂覆的石英、或可耐受由处理及净化气体所引起的化学分解的任何的类似的适当材料中制成。使用夹环1030固定到上圆顶1028的反射器1022可以任选地放置于上圆顶1028的外侧。反射器1022可以具有连接至冷却源(未图示)的一个或多个通道1026。通道1026连接至形成于反射器1022的一侧上的通路(未图示)。
图11为图10的基座1006的等距视图。载体206由载体提升销1005支撑，以使基板124(其一部分图示为由载体206支撑)基座1006的前侧1010间隔开来。图11所示的载体206与基板124的位置可以是传送位置，其中机器人(未图示)可以进入基座1006的前侧1010与基板124之间的空间。
基板支撑件190包括中心轴1032以及围绕中心轴1032设置的外轴1100。中心轴1032与外轴1100中的一者或两者可以相对于彼此线性移动。在一个实施方式中，中心轴1032可以在Z方向上移动，而外轴1100是静止的，以相对于载体提升销1005升高或降低基座1006。载体提升销1005设置于第二支撑臂1105上，第二支撑臂1105大致平行于第一支撑臂1092。第二支撑臂1105的端部包括垫1110，在载体206的传送期间载体提升销1005在垫1110处被支撑。第一支撑臂1092包括倾斜的延伸部1115，而在其周边1120处接触基座1006的背侧1004。载体提升销1005可移动地设置成穿过形成于第一支撑臂1092中的开口1125，以允许载体提升销1005相对于第一支撑臂1092在Z方向上移动。
图12为图10的基座1006与载体206的一部分的放大剖面图。如图10所述，载体206设置在形成于基座1006的前侧1010中的沟槽1025。载体提升销1005中的一者设置成穿过形成于与沟槽1025相邻的基座1006中的开口1200。在如图10及图12所示的处理位置中，载体提升销1005脱离载体206，使得载体206搁置或容纳于沟槽1025中。举例而言，沟槽1025包括参考表面1205，在参考表面1205处可以支撑载体206的周边边缘615。在所示的处理位置中，沟槽1025与载体206经构造而使得载体206的上表面1210位于基座1006的前侧1010与基板124的上表面的平面中的一者或二者的平面下方。载体提升销1005包括喇叭形头部1215，以允许载体提升销1005悬挂于基座1006内，并与载体206间隔开。举例而言，载体提升销1005包括圆形的倾斜侧壁1220，而与开口1200的倾斜侧1225适配。
然而，在传送期间，可以从基座1006抬起其上具有基板124的载体206。举例而言，可以向下推动(沿着Z方向)基座1006，使得喇叭形头部1215的凸起部分1230与载体206的凹陷沟槽610接触。如图11所示，提升销1005沿着Z方向的持续提升，使基板124远离基座1006的前侧1010。基板124及载体206远离基座1006以允许机器人叶片(未图示，例如图1所示的真空机器人130的叶片134)进入其间。
尽管前述内容涉及本发明的实施方式，可在不脱离本公开内容的基本范围的情况下设计本公开内容的其他及进一步的实施方式，且本公开内容的保护范围由随附权利要求书所确定。

Claims (25)

1.一种基板处理系统，包含：
传送腔室；
处理腔室，所述处理腔室耦接至所述传送腔室，其中所述处理腔室包含：
多个堆叠基板保持器，所述多个堆叠基板保持器各自被构造为支撑基板，其中所述多个堆叠基板保持器的每一者包括支座和多个支撑构件，所述多个支撑构件从所述支座的弯曲唇部横向延伸；和
台座，所述台座包括热传递元件，所述热传递元件被定位成调节支撑在所述多个支撑构件的支撑构件上的基板的温度；和
传送腔室机器人，所述传送腔室机器人设置在所述传送腔室中，并被构造为将基板从所述传送腔室传送至所述多个堆叠基板保持器的所述多个支撑构件的每一者。
2.根据权利要求1所述的基板处理系统，进一步包含：
工厂接口装载站，所述工厂接口装载站包含装载站机器人，其中所述处理腔室设置在所述传送腔室和所述工厂接口装载站之间，并且所述装载站机器人被构造为将基板从所述工厂接口装载站传送至所述多个堆叠基板保持器的所述多个支撑构件的每一者。
3.根据权利要求1所述的基板处理系统，其中所述台座耦接至所述处理腔室的底部，并且所述热传递元件包含通路，以允许流体通过所述通路。
4.根据权利要求3所述的基板处理系统，其中所述通路耦接至冷却流体源。
5.根据权利要求1所述的基板处理系统，进一步包括加热模块，其中所述多个堆叠基板保持器设置在所述加热模块和所述台座之间，并且所述加热模块被构造为加热支撑在所述多个支撑构件的支撑构件上的基板。
6.根据权利要求1所述的基板处理系统，进一步包含一个或多个通气通路和泵送通路，其中所述一个或多个通气通路和所述泵送通路被构造为在其间形成分层气体流动。
7.一种处理腔室，包含：
基座，所述基座具有第一表面和与所述第一表面相对的第二表面；
沟槽，所述沟槽形成在所述第一表面中并相邻于所述第一表面的周边，所述沟槽包括参考表面，其中所述参考表面从所述第一表面的平面凹陷；和
基板支撑结构，所述基板支撑结构包括多个载体提升销，所述多个载体提升销的每一者可移动地设置在形成于所述第二表面和所述参考表面之间的开口中，其中所述开口包括倾斜开口侧壁，所述倾斜开口侧壁凹陷而开始于距所述参考表面一定距离处，并且所述多个载体提升销的每一者包含：
凸起部分，所述凸起部分被构造为接触基板载体的凹陷部分，
其中所述多个载体提升销相对于所述基座在升高位置和降低位置之间是可移动的，其中，在所述升高位置中，所述凸起部分接触所述基板载体的所述凹陷部分，并且在所述降低位置中，所述凸起部分与所述基板载体间隔开。
8.根据权利要求7所述的处理腔室，其中所述参考表面被构造为支撑所述基板载体，并且所述参考表面与所述第一表面平行。
9.根据权利要求7所述的处理腔室，其中所述基板支撑结构包括多个第一支撑臂和多个第二支撑臂。
10.根据权利要求9所述的处理腔室，其中所述第一支撑臂的每一者接触所述基座的所述第二表面。
11.根据权利要求9所述的处理腔室，其中所述第二支撑臂的每一者支撑所述多个载体提升销的一个提升销。
12.根据权利要求9所述的处理腔室，其中所述多个载体提升销的每一者被定位成延伸通过形成于所述第一支撑臂的一者中的提升销开口。
13.根据权利要求8所述的处理腔室，其中所述多个载体提升销的每一者包括喇叭形头部，所述喇叭形头部包含：
倾斜头部侧壁，所述倾斜头部侧壁被构造为与所述倾斜开口侧壁适配；和
所述凸起部分。
14.根据权利要求8所述的处理腔室，其中所述降低位置是所述多个载体提升销从所述基座悬挂的悬挂位置。
15.一种处理腔室，包含：
基座，所述基座具有主体，所述主体具有第一表面和与所述第一表面相对的第二表面；
沟槽，所述沟槽形成在所述第一表面中并相邻于所述第一表面的周边，所述沟槽包括从所述第一表面的平面凹陷的凹陷表面；和
基板支撑结构，所述基板支撑结构包括多个载体提升销，所述多个载体提升销的每一者可移动地设置在定位于所述沟槽中的开口中，所述开口穿过所述主体形成，并且所述开口包括倾斜开口侧壁，所述倾斜开口侧壁凹陷而开始于距所述沟槽的所述凹陷表面一定距离处，并且所述多个载体提升销的每一者包含：
凸起部分，所述凸起部分被构造为接触基板载体的凹陷部分，
其中所述多个载体提升销相对于所述基座在升高位置和降低位置之间是可移动的，其中，在所述升高位置中，所述凸起部分接触所述基板载体的所述凹陷部分，并且在所述降低位置中，所述凸起部分与所述基板载体间隔开。
16.根据权利要求15所述的处理腔室，其中所述基板支撑结构包括多个第一支撑臂和多个第二支撑臂。
17.根据权利要求16所述的处理腔室，其中所述第一支撑臂的每一者接触所述基座的所述第二表面。
18.根据权利要求16所述的处理腔室，其中所述第二支撑臂的每一者支撑所述多个载体提升销的一个提升销。
19.根据权利要求16所述的处理腔室，其中所述多个载体提升销的每一者被定位成延伸通过形成于所述第一支撑臂的一者中的提升销开口。
20.根据权利要求15所述的处理腔室，其中所述降低位置是所述多个载体提升销从所述基座悬挂的悬挂位置。
21.根据权利要求15所述的处理腔室，其中所述凹陷表面被构造为支撑所述基板载体，并且所述凹陷表面与所述第一表面平行。
22.根据权利要求21所述的处理腔室，其中所述多个载体提升销的每一者包括喇叭形头部，所述喇叭形头部包含：
倾斜头部侧壁，所述倾斜头部侧壁被构造为与所述倾斜开口侧壁适配；和
所述凸起部分。
23.根据权利要求22所述的处理腔室，其中所述降低位置是所述多个载体提升销从所述基座悬挂的悬挂位置。
24.根据权利要求15所述的处理腔室，其中所述降低位置是所述多个载体提升销从所述基座悬挂的悬挂位置。
25.根据权利要求15所述的处理腔室，其中所述凹陷表面被构造为支撑所述基板载体。
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