TW201941333A - 減少背側基板接觸的基板傳送機制 - Google Patents

減少背側基板接觸的基板傳送機制 Download PDF

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TW201941333A
TW201941333A TW108102630A TW108102630A TW201941333A TW 201941333 A TW201941333 A TW 201941333A TW 108102630 A TW108102630 A TW 108102630A TW 108102630 A TW108102630 A TW 108102630A TW 201941333 A TW201941333 A TW 201941333A
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carrier
substrate
chamber
processing system
base
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TW108102630A
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TWI813617B (zh
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石井正人
理查Ｏ 柯林斯
李察 吉爾金
亞歷山大 伯格
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美商應用材料股份有限公司
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Abstract

揭示一種基板處理系統，包括耦接到轉移腔室的基板輸入/輸出腔室，以及耦接到轉移腔室的一或更多個處理腔室，其中基板輸入/輸出腔室包括複數個堆疊載體托持器，而載體托持器中之一者包括用於在其上支撐基板的基板載體。

Description

減少背側基板接觸的基板傳送機制
本揭示一般係關於用於在處理工具中轉移基板的方法及設備。更具體而言，本揭示係關於用於在處理工具的腔室或多個腔室中轉移基板的方法及設備。
超大規模積體（ULSI）電路可以包括形成於半導體基板（例如，矽（Si）基板）上的超過一百萬個電子裝置（例如，電晶體），並協作以在裝置內執行各種功能。
許多習知熱處理通常係用於電晶體及其他電子裝置的製造。該等處理通常在具有多個腔室的工具（例如，群集工具）中執行。在該等處理期間最重要的是顆粒產生及/或基板的損傷，以達成所期望的產率。然而，顆粒及/或損傷的一個來源係發生於基板轉移期間（亦即，當基板在工具上的特定處理腔室內移動時，或者當基板從工具的一個腔室移動到工具的另一腔室時）。
已經確定，在轉移期間接觸基板的背側（亦即，與沉積接收側相對的一側）的習知基板提升銷係為顆粒及/或基板損傷的一個原因。舉例而言，基板與提升銷的接觸可能刮傷基板及/或造成來自接觸的顆粒。來自接觸的顆粒可能污染腔室、基板、或後續基板，所有該等都會降低產率。
因此，需要一種用於在工具中轉移基板的改善方法及設備。
本揭示一般係關於用於在處理工具中轉移基板的方法及設備。更具體而言，本揭示係關於用於在處理工具的腔室或多個腔室中轉移基板的方法及設備。
在一個實施例中，揭示一種基板處理系統，包括耦接到轉移腔室的基板輸入/輸出腔室，以及耦接到轉移腔室的一或更多個處理腔室，其中基板輸入/輸出腔室包括複數個堆疊載體托持器，而載體托持器中之一者包括用於在其上支撐基板的基板載體。
在另一實施例中，揭示一種裝載閘腔室，包括台板、複數個載體托持器、複數個支撐構件、及載體，台板具有嵌入其中的熱轉移元件，複數個載體托持器係定位成環繞台板，複數個支撐構件從堆疊載體托持器中之每一者延伸，而載體係定位於複數個堆疊載體托持器中之一者的支撐構件上。
在另一實施例中，揭示一種處理腔室，包括基座與基板支撐結構，基座具有相鄰於其周邊而形成的凹槽，而基板支撐結構包括複數個載體升降銷，其中載體升降銷中之每一者係容納於與凹槽相鄰的開口中。
本揭示提供在處理工具中轉移基板的方法及設備。更特定言之，使用最小化與基板的主表面的接觸的基板轉移機制來轉移基板。
第1圖係為包括適於實施本發明的基板轉移機制的一個實施例的示例性處理系統100的示意性頂視平面圖。處理系統100包括基板輸入/輸出腔室122、真空密封處理平台104、工廠介面102、及系統控制器144。基板輸入/輸出腔室122可以是裝載閘腔室。在一個實施例中，處理系統100可以是可從位於California的Santa Clara的Applied Materials, Inc.商業取得的CENTURA® 整合處理系統。預期其他處理系統（包括來自其他製造商的處理系統）可以適用於來自本揭示的益處。
平台104包括複數個處理腔室110、112、132、128、120以及至少一個基板輸入/輸出腔室122（耦接到真空基板轉移腔室136）。第1圖圖示二個基板輸入/輸出腔室122。工廠介面102係藉由基板輸入/輸出腔室122耦接到轉移腔室136。
在一個實施例中，工廠介面102包含至少一個對接站108以及至少一個工廠介面機器人114，以便於基板的轉移。對接站108經配置以接受一或更多個前開式晶圓傳送盒（FOUP）。第1圖的實施例係圖示二個FOUPS 106A、106BB。具有設置於機器人114的一端上的葉片116的工廠介面機器人114經配置以將基板從FOUPS 106A、106BB轉移到處理平台104，而透過基板輸入/輸出腔室122進行處理。
基板輸入/輸出腔室122中之每一者具有耦接到工廠介面102的第一埠以及耦接到轉移腔室136的第二埠。基板輸入/輸出腔室122係耦接到壓力控制系統（未圖示），而對基板輸入/輸出腔室122進行抽氣及通氣，以促使通過轉移腔室136的真空環境與工廠介面102的實質周圍（例如，大氣）環境之間的基板。
轉移腔室136具有設置其中的真空機器人130。真空機器人130具有葉片134，而能夠在基板輸入/輸出腔室122與處理腔室110、112、132、128、120之間轉移基板124。
系統控制器144係耦接至處理系統100。系統控制器144使用系統100的處理腔室110、112、132、128、120的直接控制來控制系統100的操作，或者藉由控制與處理腔室110、112、132、128、120及系統100相關聯的電腦（或控制器）來控制系統100的操作。在操作中，系統控制器144能夠從各別腔室及系統控制器144進行資料收集及反饋，以將系統100的效能最佳化。
系統控制器144通常包括中央處理單元（CPU）138、記憶體140、及支援電路142。CPU 138可以是能夠用於工業環境中的任何形式的通用電腦處理器中之一者。支援電路142通常耦接到CPU 138，並且可以包含快取記憶體、時脈電路、輸入/輸出子系統、功率供應器、及類似者。當由CPU 138執行時，軟體例式將CPU 138轉換成專用電腦（控制器）144。軟體例式亦可以藉由第二控制器（未圖示）儲存及/或執行，第二控制器係位於系統100的遠端。
第2圖係為根據本揭示的一個實施例的基板輸入/輸出腔室122的橫截面圖。基板輸入/輸出腔室122通常包含腔室主體202、第一載體托持器204B、第二載體托持器204A、溫度控制台座240、及可選擇的加熱器模組270。第一載體托持器204B及第二載體托持器204A中之每一者包括由載體206支撐的基板124。腔室主體202可以由單一材料主體（例如，鋁）製成。腔室主體202包括第一側壁208、第二側壁210、橫向壁242（第2圖中僅圖示一個）、頂部214、及底部216，以定義腔室容積218。窗口（未圖示）可以設置於腔室主體的頂部214中，並且通常由石英構成。當包括加熱器模組270時，加熱器模組270至少部分覆蓋腔室主體202的頂部214。
可以控制腔室容積218的壓力，而可以將基板輸入/輸出腔室122進行抽空以基本匹配轉移腔室136的環境，而進行通氣以基本匹配工廠介面102的環境。腔室主體202包括一或更多個通氣通路230及泵送通路232。在進行通氣及抽空期間，由於通氣通路230及泵送通路232的位置，基板輸入/輸出腔室122內的流動基本上分層流動，並經配置以讓顆粒污染最小化。
泵送通路232係耦接至真空泵236。真空泵236係為低振動，以最小化定位於基板輸入/輸出腔室122內的托持器204B、204A上的基板124的擾動，同時藉由將基板輸入/輸出腔室122與泵236之間的流體路徑最小化至通常小於3英尺來提高抽氣效率及時間。
第一裝載埠238係設置於腔室主體202的第一側壁208中，以允許基板124在基板輸入/輸出腔室122與工廠介面102之間轉移。第一狹縫閥244選擇性密封第一裝載埠238，以將基板輸入/輸出腔室122與工廠介面102隔離。第二裝載埠239係設置於腔室主體202的第二側壁210中，以允許基板124在基板輸入/輸出腔室122與轉移腔室136之間轉移。與第一狹縫閥244基本類似的第二狹縫閥246選擇性密封第二裝載埠239，以將基板輸入/輸出腔室122與轉移腔室136的真空環境隔離。
第一載體托持器204B同心耦接到第二載體托持器204A（亦即，堆疊於其頂部），而第二載體托持器204A係設置於腔室底部216上方。載體托持器204B、204A通常安裝到支撐件220，支撐件220係耦接到延伸穿過腔室主體202的底部216的軸件282。通常，每一載體托持器204B、204A經配置以保持定位於各別載體206上的一個基板。軸件282係耦接到設置於基板輸入/輸出腔室122的外部的提升機制296，提升機制296係控制腔室主體202內的載體托持器204B及204A的升高。波紋管284係耦接於支撐件220與腔室主體202的底部216之間，並圍繞軸件282設置，以在第二載體托持器204A與底部216之間提供可撓密封，而因此防止從腔室主體202洩漏或進入腔室主體202，並且有助於載體托持器204B、204A的升高及降低，而不會損害基板輸入/輸出腔室122內的壓力。
第一載體托持器204B係用於將來自工廠介面102的未處理的基板托持在第一載體206上，而第二載體托持器204A係用於將從轉移腔室136返回的經處理的基板（例如，經蝕刻的基板）托持在第二載體206上。
第3A圖描繪基板輸入/輸出腔室122中的載體托持器204B、204A的一個實施例。為清楚起見，第3A圖並未圖示載體206。第二載體托持器204A通常藉由支撐件220托持於腔室主體202的底部216上方。第一支座308係設置於每一構件304、306之間，以將第二載體托持器204A維持成與支撐件220間隔開的關係。第二支座310係設置於第一與第二托持器204B、204A之間，以在其間維持間隔開的關係。當在載體托持器204B、204A上取回及沉積基板時，支座308、310允許轉移及工廠介面機器人130、114的葉片134、116通過其間。每一托持器204B、204A可替代地包括「L形」配置，「L形」配置包括維持托持器204B、204A與基板輸入/輸出腔室122的相鄰部件之間的間隔開的關係的部分。
每一載體托持器204B、204A包括第一構件304與第二構件306。每一構件304、306包括彎曲的內部部分312，彎曲的內部部分312具有徑向向內延伸的唇部314。彎曲的內部部分312經配置以允許基板124擱置於唇部314上。彎曲的內部部分312在其間捕捉基板124，以藉此防止基板124從唇部314脫落。第一構件304面向第二構件306，其中每一者的彎曲的內部部分312指向另一者。第一構件304與第二構件306係位於溫度控制台座240的相對側上，溫度控制台座240係設置於腔室122內的中心，並從其底部216突出。
第3B圖係為第一載體托持器204B與第二載體托持器204A的另一實施例的等距視圖。第一載體托持器204B及第二載體托持器204A中之每一者係圖示以支撐載體206。支撐構件320係圖示於載體206與支座308、310之間。載體206可以手動轉移到基板輸入/輸出腔室122，以將系統進行初始化。舉例而言，藉由打開頂部214（第2圖所示）或透過第一裝載埠238或第二裝載埠239中之一者，可以將載體206放置於支座308、310上。下文將詳細描述定位處理。
支撐構件320中之每一者可以由石英材料製成。支撐構件320中之每一者係經由干涉配適或其他合適的耦接方法來與支座308、310對接。支座308、310可以由金屬材料（例如，不銹鋼）製成。支座308、310可以分開約1英寸的節距或距離322。載體206中之每一者可以由陶瓷材料（例如，碳化矽）製成。溫度控制台座240的上表面與支座308中的載體206的下表面之間的距離324可以是約0.75英寸。
返回參照第2圖，溫度控制台座240係藉由位於腔室202的中心的支撐件278而耦接到腔室主體202的底部216。支撐件278可以是中空的，或者可以包括穿過其中的通道，以允許流體、電訊號、感測器、及類似者耦接到台座240。軸件282及提升機制296係定位於支撐件278的周邊。
溫度控制台座240具有溫度控制表面292，以用於對溫度控制表面292附近的基板進行熱控制。溫度控制台座240包括熱轉移元件286，熱轉移元件286可以是循環水套、熱電裝置（例如，Peltier裝置）、或是可用於控制溫度控制表面292的溫度的其他結構。舉例而言，熱轉移元件286可以包括一或更多個管件，一或更多個管件係設置於冷卻台板280中，並流體耦接到冷卻流體源（未圖示），以讓冷卻流體循環通過冷卻台板280。
具有與其耦接的載體托持器204B、204A的支撐件220可以降低到第一位置，而在第一位置處，冷卻台板280的上表面292係與由第二載體托持器204A支撐的基板相當接近或接觸。在第一位置處，冷卻台板280可以用於調節設置於冷卻台板280上（或附近）的基板的溫度。舉例而言，藉由在冷卻台板280的上表面292上支撐基板，可以在抽空期間在基板輸入/輸出腔室122中冷卻從處理返回的基板。熱能量係從基板通過冷卻台板280轉移到熱轉移元件286，以冷卻基板。在冷卻基板之後，載體托持器204B、204A可以朝向腔室主體202的頂部214升高，以允許機器人130、114存取位於第二基板支撐件204A中的基板。可選擇地，托持器204B、204A可以降低到一位置，在該位置處，上表面292係與由第一載體托持器204B支撐的基板接觸或相當接近。在此位置處，冷卻台板280可以用於熱調節及加熱基板。
第4A圖至第4G圖係為圖示第1圖的工廠介面102、基板輸入/輸出腔室122、及轉移腔室136之間的基板轉移順序的各種視圖。第4A圖係為基板輸入/輸出腔室122的示意性側視圖，而圖示延伸通過基板輸入/輸出腔室122的第一裝載埠238的第一機器人葉片400。第一機器人葉片400係圖示成支撐來自第1圖的工廠介面102的未處理的基板405。第一機器人葉片400可以是第1圖所示的工廠介面機器人114的葉片116中之一者。
除了第一裝載埠238之外，基板輸入/輸出腔室122亦包括冷卻台板280、第二載體托持器204A、第一載體托持器204B、及經由支撐構件320設置於托持器204B、204A上的載體206。此外，提升銷410（以橫截面圖示其中一者）延伸通過冷卻台板280。提升銷410中之每一者係耦接到致動器411，致動器411使提升銷410在Z方向上移動。波紋管組件416係設置於冷卻台板280與致動器411之間。冷卻台板280亦設置複數個軸襯417，以促進提升銷410在其中的垂直移動。
提升銷410中之每一者經配置以在其邊緣上接觸基板405的下表面。提升銷410中之每一者包括設置於軸件413的端部上的尖端412。尖端412係由比軸件413的材料更軟的材料製成。舉例而言，軸件413可以由金屬材料（例如，不銹鋼）製成，而尖端412可以由聚合物材料製成。用於尖端412的較軟材料防止或最小化基板405的背側的刮傷。用於尖端412的示例性材料係為含氟聚合物，含氟聚合物包括聚四氟乙烯（PTFE）、氟化乙烯丙烯（FEP）、全氟烷氧基聚合物（PFA）、或其他合適的塑膠材料。尖端412可以設計成經由干涉配適而耦接到各別軸件413。在第4A圖所示的實施例中，尖端412包括突出部分414，而突出部分414緊密配適到形成於軸件413中的凹陷415。
第一機器人葉片400在X方向上通過第一裝載埠238延伸進入基板輸入/輸出腔室122。第一機器人葉片400經程式化以將基板405定位成與設置於第二載體托持器204A上的載體206同心。
第4B圖及第4C圖係為當第一機器人葉片400如第4A圖所示定位時的基板輸入/輸出腔室122的示意性橫截面圖。除了第一機器人葉片400、載體206、及基板405之外，熱轉移元件286更清楚地圖示於冷卻台板280內。可以使用覆蓋板428將熱轉移元件286密封到冷卻台板280中。覆蓋板428可以是圓形的，並由鋁材料製成。
再次參照第4A圖，在此轉移處理期間，第一機器人葉片400與基板輸入/輸出腔室122中的任何其他部件之間的最小間距係為約0.12英寸。舉例而言，支撐構件320的下表面與基板405的上表面之間的距離440係為約0.12英寸；基板405的上表面與第一裝載埠238的表面之間的距離442係為約0.16英寸；基板405的下表面與尖端412的上表面之間的距離444係為約0.2英寸；以及尖端412的上表面與冷卻台板280的上表面之間的距離446係為約0.60英寸或更大。
第4D圖係為描繪第4A圖至第4C圖的描述所論述的轉移處理的另一部分的示意性側視圖。第4D圖圖示從第一機器人葉片400轉移到提升銷410的基板405。可以藉由第一機器人葉片400的垂直移動（Z方向）來實現基板405到提升銷410的轉移。在此位置，第一機器人葉片400的上表面與基板405的下表面之間的距離448可為約0.2英寸。在此位置，第一機器人葉片400的下表面與載體206的上表面之間的距離450可為約0.13英寸。在此位置，第一機器人葉片400可以從基板輸入/輸出腔室122縮回。
第4E圖係為描繪第4A圖至第4D圖的描述所論述的轉移處理的另一部分的示意性側視圖。第4E圖圖示從提升銷410轉移到設置於第二載體托持器204A上的載體206的基板405。在此視圖中，使托持器204B、204A在Z方向上移動的支撐件220（第2圖所示）將處於其最高位置。支撐件220的最高位置使二個托持器204B、204A朝向頂部214升高。此外，如第2圖所示，提升銷410縮回（沿著Z方向降低），以允許來自轉移腔室136的第二機器人葉片452進入第二裝載埠239。第二機器人葉片452可以是第1圖所示的真空機器人130的葉片134。
第二機器人葉片452係用於經由轉移腔室136將基板405以及載體206轉移到第1圖所示的處理腔室110、112、132、128、120中之一或更多者。在第4E圖所示的位置中，頂部214的下表面與設置於第一載體托持器204B上的載體206之間的距離454係為約0.25英寸，而第二機器人葉片452的上表面與載體206的下表面之間的距離456可為約0.19英寸。為了將基板405轉移到第二機器人葉片452，支撐件220（第2圖）沿著Z方向降低的距離大於距離456。此後，具有載體206及其上的基板405的第二機器人葉片452可以沿著X方向從第二裝載埠239縮回。
第4F圖係為描繪第4A圖至第4E圖的描述所論述的轉移處理的另一部分的示意性側視圖。第4F圖圖示由載體206支撐的來自轉移腔室136（第1圖所示）的經處理的基板458，而載體206係由第二機器人葉片452支撐。在此轉移處理中，支撐件220係位於最低位置，而提供頂部214與第一載體托持器204B之間的空間。此外，提升銷410縮回。基板458係圖示於第4F圖中，其中載體206與第一載體托持器204B同心對準。
第4G圖係為描繪第4A圖至第4F圖的描述所論述的轉移處理的另一部分的示意性側視圖。在第4F圖及第4G圖所示的位置之間，提升銷410係從第4F圖所示的位置垂直（沿著Z方向）致動到第4G圖所示的位置，並圖示由提升銷410支撐的基板458。此外，載體206係由第一載體托持器204B支撐。如第4G圖所示，一旦基板458係由提升銷410支撐，則第一機器人葉片400橫向（沿著X方向）及/或垂直（沿著Z方向）致動，以從提升銷410移除基板458。一旦基板458係由第一機器人葉片400支撐，則第一機器人葉片400（其上具有基板458）可以移動通過第一裝載埠238，並且基板458可以放置於工廠介面102中。
第5A圖至第5C圖係為冷卻台板280以及與基板輸入/輸出腔室122的冷卻台板280相關聯的其他部件的各種視圖。第5A圖係為冷卻台板280、第一載體托持器204B、及耦接到支撐件220的第二載體托持器204A的等距視圖。第5B圖係為冷卻台板280、載體206中之一者、及支撐件220的等距局部剖面圖。
在第5A圖中，複數個定位銷500係圖示為在其周邊區域中耦接到冷卻台板280。定位銷500中之每一者臨時定位於圍繞冷卻台板280的周邊而形成的開口505內（如第5B圖所示），並用於將載體206定位至至第一載體托持器204B與第二載體托持器204A的中心或定位至第一載體托持器204B與第二載體托持器204A。當定位銷500定位於第一或第二載體托持器204A或204B中之一者時，定位銷500係定義載體206的外邊緣位置。舉例而言，載體206可以手動轉移進入基板輸入/輸出腔室122，而定位銷500係用於相對於冷卻台板280定位載體206。當載體206定位於第一或第二載體托持器204A、204B時，定位銷500緊密限制每一載體206的外邊緣，以定位載體206來進行處理。一旦將載體206定位，則可以移除定位銷500。定位銷500中之每一者可以由石英材料製成。
第5A圖亦圖示耦接到冷卻台板280的複數個對準墊510。儘管第5A圖僅圖示二個墊510，但是另一墊係由第一載體托持器204B及第二載體托持器204A所隱藏。
墊510的橫截面係圖示於第5B圖及第5C圖。墊510中之每一者可以用於防止載體206與冷卻台板280之間的接觸。此外，由於冷卻期間的載體206係由墊510支撐，所以防止基板（未圖示）與台板280之間的接觸。舉例而言，隨著基板將擱置於載體206的基板接收表面515上，墊510在冷卻台板280的上表面與載體206的基板接收表面515之間提供間隙520。載體206的基板接收表面515將與安裝其上的基板的下表面重合，而間隙520將從基板的下表面延伸到冷卻台板280的上表面。類似於定位銷500，墊510由石英材料製成。
第5C圖係為冷卻台板280、複數個墊510中的一個墊510、及載體206的放大剖面圖。墊510中之每一者的橫截面通常為「T」形，而每一墊510包括平坦肩部530，平坦肩部530係圍繞從肩部530延伸的突起535。在肩部530與突起535之間設置成角度的表面540。此處的突起535係為截頭圓錐體。成角度的表面540可以用於將載體206相對於冷卻台板280定位於中心。墊510中之每一者亦包括銷部分545，銷部分545係插入形成於冷卻台板280中的開口550。肩部530係適配到冷卻台板280的凹陷凸緣555中。肩部530的高度560略大於凹陷凸緣555的深度，以提供間隙520。
第6圖係為冷卻台板280與載體206的一部分的示意性橫截面圖。載體206具有支撐於其基板接收表面515上的基板600。載體206包括圓形主體605，圓形主體605具有形成於主體605中的與基板接收表面515相對的凹陷槽體610。此處，圓形主體605係為環形。與凹陷槽體610相鄰的周邊邊緣615係與墊510的肩部530接觸（均圖示於第5C圖）。周邊邊緣615與肩部530（第5C圖所示）之間的接觸提供間隙520。傾斜邊緣620將周邊邊緣615中之一者（例如，外周邊邊緣）與外壁625連接。傾斜邊緣620可以與墊510的成角度的表面540接觸（均圖示於第5C圖）。
第7A圖至第7D圖係為圖示基板輸入/輸出腔室122的細節的各種視圖。第7A圖係為基板輸入/輸出腔室122的等距底視圖，以圖示移動提升銷410的基板提升機制700。基板提升機制700包括支撐板702，支撐板702支撐馬達704，而馬達704係耦接到冷卻台板280與複數個提升銷組件706。亦圖示具有複數個主要真空管710的真空系統708。主要真空管710係耦接至冷卻台板280，並用於抽空與設置於其中的提升銷410相關聯的通路。真空系統708與主要真空管710彼此流體連通，並將在第9A圖中更詳細地描述。
第7B圖及第7C圖係為冷卻台板280的一部分的側剖面圖，以圖示藉由基板提升機制700所提供的移動。第7B圖圖示處於伸出位置的提升銷410，而第7C圖圖示處於縮回位置的提升銷410。第7D圖係為第7B圖的基板提升機制700的放大剖面圖。儘管第7B圖至第7D圖僅圖示一個提升銷410與相關聯的基板提升機制700，但應注意，支撐板702上的複數個提升銷410中的每一提升銷410將具有相關聯的基板提升機制700。
如第7B圖至第7D圖所示，提升銷組件706包括設置於冷卻台板280與底座殼體711之間的波紋管708，底座殼體711係耦接到支撐板702。波紋管708可以由具有低熱膨脹係數的高強度的金屬合金製成。在一個實例中，波紋管708可以是Ni-Mo-Cr合金（例如，以商品名HAYNES® 242® 銷售的合金材料）。密封件709（例如，O形環）可以設置於底座殼體711與支撐板702之間的介面處。安裝板713可以耦接於冷卻台板280與波紋管708之間。安裝板713可以經由緊固件耦接到冷卻台板280。
提升銷410的軸件413的一部分係設置於底座殼體711中。舉例而言，如第7B圖及第7D圖最佳地圖示，軸件413的與尖端412相對的一端係耦接到夾取構件712。夾取構件712可以由可在高熱環境中使用的塑膠材料（例如，以商品名VESPEL® 販售的聚酰亞胺系聚合物）製成。夾取構件712係耦接到保持器殼體714。保持器殼體714在其一端接收夾取構件712的唇部716。保持器殼體714的相對端係耦接到底座銷718。底座銷718可以耦接到支撐板702。用於底座銷718、底座殼體711、及保持器殼體714的材料包括金屬（例如，不銹鋼）。
再次參照第7B圖及第7C圖，圖示設置成環繞提升銷410中之一者的軸襯417。軸襯417中之每一者可以由可在高熱環境中使用的塑膠材料製成。軸襯417中之每一者可以由內部保持器724（例如，卡環保持器）固定。限制構件726（可以是螺栓或螺紋軸件）係圖示為耦接到支撐板702。如第7B圖所示，可以調整限制構件726的高度（例如，在Z方向上），以限制提升銷410沿著Z方向的移動。
第8圖係為經由可撓連接構件800耦接到支撐板702的馬達704的放大剖面圖。可撓連接構件800包括底座805，底座805係藉由複數個底座緊固件810耦接到支撐板702。底座緊固件810中之每一者穿過形成於支撐板702中的過大孔洞815。過大孔洞815中之每一者的直徑係大於底座緊固件810的直徑，而允許底座緊固件810穿過孔洞815而緊固到底座805。底座805包括貫通狹槽820，以接收中心緊固件825的部分。中心緊固件825將馬達704耦接到底座805。貫通狹槽820暴露中心緊固件825的頭部830的至少一部分，而使得中心緊固件825能夠旋轉，以沿著Z方向移動中心緊固件825。當致動時，可撓連接構件800在支撐板702與底座805的周邊區域之間提供幾毫米的間隙835。
第9A圖及第9B圖係為基板輸入/輸出腔室122的等距視圖，以圖示真空系統708的細節。第9A圖係為基板輸入/輸出腔室122的等距底視圖，而第9B圖係為基板輸入/輸出腔室122的底部的等距剖面圖。
在第9A圖及第9B圖中，支撐板702係設置於冷卻台板280下方，而馬達704以及複數個提升銷組件706係耦接於其間。第9A圖圖示複數個主要真空管710。每一主要真空管710係與各別提升銷組件706相關聯，並藉由一或更多個次要真空管905耦接到前端線路900。隔離閥910係圖示為定位於主要真空管710與前端線路900之間。
如第9B圖所示，主要真空管710中之每一者（第9B圖僅圖示一個）係藉由鑽孔920流體耦接到提升銷通路915（兩者都形成於冷卻台板280中）。舉例而言，提升銷通路915係為形成於冷卻台板280的主表面之間的貫通孔洞，而鑽孔920可以是沿著提升銷通路915的長度而連到冷卻台板280的一個主表面所形成的通路，並與主要真空管710對接。在操作中，真空系統708係耦接到前端線路900，前端線路900係耦接到真空泵236（第2圖所示）。儘管真空泵236係用於抽空提升銷通路915，但亦用於抽空基板輸入/輸出腔室122的腔室容積218。
第10圖係為根據一個實施例的處理腔室1000的示意性剖面圖。處理腔室1000可以是第1圖所示的處理腔室110、112、132、128、120中之一或更多者。
基座1006係位於處理腔室1000內，並在上圓頂1028與下圓頂1014之間。處理腔室1000可用於處理一或更多個基板（包括將材料沉積在基板124的上表面上）。處理腔室1000可以包括輻射加熱燈1002的陣列，以用於加熱設置於處理腔室1000內的基座1006的背側1004以及其他部件。本文使用的「基座」係定義為吸收輻射能量並將所吸收的輻射能量轉換成熱能量的物體，熱能量係加熱放置於其上或附近的另一物體。儘管處理腔室1000包括基座1006，但是本文所述的載體206的實施例可以與其他類型的基板支撐件或台座一起使用，並且可以與基座1006類似地配置。上圓頂1028、下圓頂1014、及設置於上圓頂1028與下圓頂1014之間的基環1036一般定義處理腔室1000的內部區域。如本文所述，基板124具有面向上並定位於載體206上的基座1006的前側1010上的裝置側1016，並且可以帶入處理腔室1000，並透過裝載埠1003定位於基座1006上。可以藉由基座支撐結構1090支撐基座1006。基座支撐結構1090包括藉由中心軸件1032支撐的至少三個第一支撐臂1092（僅圖示兩個）。在一個實施例中，降低中心軸件1032上的基座1006，以允許載體提升銷1005與載體206接觸。載體提升銷1005穿過第一支撐臂1092中的孔洞與基座1006中的孔洞，而從基座1006提高載體206與基板124。載體206可以設置在形成於基座1006的前側1010中的凹部或凹槽1025中。如圖所示，基座1006在位於處理位置時將處理腔室1000的內部空間劃分為位於基板124上方的處理氣體區域1056以及位於基座1006下方的吹掃氣體區域1058。基座1006可以旋轉，並沿著上下方向1034移動基板124及載體206。燈1002可經配置以包括燈泡1041，並用於加熱基板124。光學高溫計1018可以用於基板124上的溫度量測/控制。燈1002可以包含在燈頭1045內。舉例而言，燈頭1045可以在處理期間或在處理之後藉由引入位於燈1002之間的通道1049的冷卻流體來冷卻。從處理氣體供應源1072供應的處理氣體係透過形成於基環1036中的處理氣體入口1074引入處理氣體區域1056。處理氣體通過位於與處理氣體入口1074相對的處理腔室1000的側邊上的氣體出口1078離開處理氣體區域1056（沿著流動路徑1075）。可以藉由與氣體出口1078耦接的真空泵1080來通過氣體出口1078促進處理氣體的移除。可以任選地圍繞基座1006設置圓形屏蔽1067或預熱環。亦可以藉由襯墊組件1063圍繞基座1006。在針對處理氣體提供預熱區域時，屏蔽1067防止或最小化從燈1002至基板124的裝置側1016的熱/光雜訊的洩漏。襯墊組件1063在處理空間（亦即，處理氣體區域1056與吹掃氣體區域1058）與處理腔室1000的金屬壁之間發揮屏蔽的作用。金屬壁可以與前驅物反應，並造成在處理空間中的污染。屏蔽1067及/或襯墊組件1063可從CVD SiC、利用SiC塗覆的燒結的石墨、生長的SiC、不透明的石英、經塗覆的石英、或可耐受由處理及吹掃氣體所引起的化學分解的任何的類似的適當材料中製成。使用夾環1030固定到上圓頂1028的反射器1022可以任選地放置於上圓頂1028的外側。反射器1022可以具有連接至冷卻源（未圖示）的一或更多個通道1026。通道1026連接至形成於反射器1022的一側上的通路（未圖示）。
第11圖係為第10圖的的基座1006的等距視圖。載體206係藉由載體提升銷1005支撐，以使基板124（其一部分係圖示為由載體206支撐）間隔遠離基座1006的前側1010。第11圖所示的載體206與基板124的位置可以是轉移位置，其中機器人（未圖示）可以進入基座1006的前側1010與基板124之間的空間。
基板支撐件190包括中心軸件1032以及環繞中心軸件1032設置的外軸件1100。中心軸件1032與外軸件1100中之一或二者可以相對於彼此線性移動。在一個實施例中，中心軸件1032可以在Z方向上移動，而外軸件1100是靜止的，以相對於載體提升銷1005升高或降低基座1006。載體提升銷1005係設置於第二支撐臂1105上，而第二支撐臂1105大致平行於第一支撐臂1092。第二支撐臂1105的端部包括墊1110，而在載體206的轉移期間支撐載體提升銷1005。第一支撐臂1092包括成角度的延伸部1115，而在其周邊1120處接觸基座1006的背側1004。載體提升銷1005係可移動地設置成通過形成於第一支撐臂1092中的開口1125，以允許載體提升銷1005相對於第一支撐臂1092在Z方向上移動。
第12圖係為第10圖的基座1006與載體206的一部分的放大剖面圖。如第10圖所述，載體206係設置在形成於基座1006的前側1010中的凹槽1025。載體提升銷1005中之一者係設置成通過形成於與凹槽1025相鄰的基座1006中的開口1200。在如第10圖及第12圖所示的處理位置中，載體提升銷1005脫離載體206，而使得載體206擱置或容納於凹槽1025中。舉例而言，凹槽1025包括參考表面1205，而可以支撐載體206的周邊邊緣615。在所示的處理位置中，凹槽1025與載體206經構造而使得載體206的上表面1210係在基座1006的前側1010與基板124的上表面的平面中之一或二者的平面下方。載體提升銷1005包括喇叭形頭部1215，以允許載體提升銷1005懸掛於基座1006內，並與載體206間隔開。舉例而言，載體提升銷1005包括圓形的成角度側壁1220，而與開口1200的成角度側1225適配。
然而，在轉移期間，可以從基座1006抬起其上具有基板124的載體206。舉例而言，可以向下推動（沿著Z方向）基座1006，而使得喇叭形頭部1215的凸起部分1230與載體206的凹陷槽體610接觸。如第11圖所示，提升銷1005沿著Z方向的連續提升讓基板124遠離基座1006的前側1010。讓基板124及載體206遠離基座1006以允許機器人葉片（未圖示，例如第1圖所示的真空機器人130的葉片134）進入其間。
儘管前述係關於本發明之實施例，本揭示之其他及進一步實施例可在不脫離本揭示之基本範疇的情況下擬出，且本揭示之範疇係由下列申請專利範圍所決定。
100‧‧‧處理系統
102‧‧‧工廠介面
104‧‧‧處理平台
106A‧‧‧FOUPS
106B‧‧‧FOUPS
108‧‧‧對接站
110‧‧‧處理腔室
112‧‧‧處理腔室
114‧‧‧機器人
116‧‧‧葉片
122‧‧‧基板輸入/輸出腔室
124‧‧‧基板
128‧‧‧處理腔室
130‧‧‧真空機器人
132‧‧‧處理腔室
134‧‧‧葉片
136‧‧‧處理腔室
138‧‧‧CPU
140‧‧‧記憶體
142‧‧‧支援電路
144‧‧‧系統控制器
190‧‧‧基板支撐件
202‧‧‧腔室主體
204A‧‧‧第二載體托持器
204B‧‧‧第一載體托持器
206‧‧‧載體
208‧‧‧第一側壁
210‧‧‧第二側壁
214‧‧‧頂部
216‧‧‧底部
218‧‧‧腔室容積
220‧‧‧支撐件
230‧‧‧通氣通路
232‧‧‧泵送通路
236‧‧‧真空泵
238‧‧‧第一裝載埠
239‧‧‧第二裝載埠
240‧‧‧溫度控制台座
242‧‧‧橫向壁
244‧‧‧第一狹縫閥
246‧‧‧第二狹縫閥
270‧‧‧加熱器模組
278‧‧‧支撐件
280‧‧‧冷卻台板
282‧‧‧軸件
284‧‧‧波紋管
286‧‧‧熱轉移元件
292‧‧‧上表面
296‧‧‧提升機制
304‧‧‧構件
306‧‧‧構件
308‧‧‧第一支座
310‧‧‧第二支座
312‧‧‧彎曲的內部部分
314‧‧‧唇部
320‧‧‧支撐構件
322‧‧‧距離
324‧‧‧距離
400‧‧‧第一機器人葉片
405‧‧‧未處理的基板
410‧‧‧提升銷
411‧‧‧致動器
412‧‧‧尖端
413‧‧‧軸件
414‧‧‧突出部分
415‧‧‧凹陷
416‧‧‧波紋管組件
417‧‧‧軸襯
428‧‧‧覆蓋板
440‧‧‧距離
442‧‧‧距離
444‧‧‧距離
446‧‧‧距離
448‧‧‧距離
450‧‧‧距離
452‧‧‧第二機器人葉片
454‧‧‧距離
456‧‧‧距離
458‧‧‧經處理的基板
500‧‧‧定位銷
505‧‧‧開口
510‧‧‧墊
515‧‧‧基板接收表面
520‧‧‧間隙
530‧‧‧肩部
535‧‧‧突起
540‧‧‧成角度的表面
545‧‧‧銷部分
550‧‧‧開口
555‧‧‧凹陷凸緣
560‧‧‧高度
600‧‧‧基板
605‧‧‧圓形主體
610‧‧‧凹陷槽體
615‧‧‧周邊邊緣
620‧‧‧傾斜邊緣
625‧‧‧外壁
700‧‧‧基板提升機制
702‧‧‧支撐板
704‧‧‧馬達
706‧‧‧提升銷組件
708‧‧‧真空系統
709‧‧‧密封件
710‧‧‧主要真空管
711‧‧‧底座殼體
712‧‧‧夾取構件
713‧‧‧安裝板
714‧‧‧保持器殼體
716‧‧‧唇部
718‧‧‧底座銷
724‧‧‧內部保持器
726‧‧‧限制構件
800‧‧‧可撓連接構件
805‧‧‧底座
810‧‧‧底座緊固件
815‧‧‧過大孔洞
820‧‧‧貫通狹槽
825‧‧‧中心緊固件
830‧‧‧頭部
835‧‧‧間隙
900‧‧‧前端線路
905‧‧‧次要真空管
910‧‧‧隔離閥
915‧‧‧提升銷通路
920‧‧‧鑽孔
1000‧‧‧處理腔室
1002‧‧‧輻射加熱燈
1003‧‧‧裝載埠
1004‧‧‧背側
1005‧‧‧載體提升銷
1006‧‧‧基座
1014‧‧‧下圓頂
1018‧‧‧光學高溫計
1022‧‧‧反射器
1025‧‧‧凹槽
1026‧‧‧通道
1028‧‧‧上圓頂
1030‧‧‧夾環
1032‧‧‧中心軸件
1036‧‧‧基環
1041‧‧‧燈泡
1045‧‧‧燈頭
1049‧‧‧通道
1056‧‧‧處理氣體區域
1058‧‧‧吹掃氣體區域
1063‧‧‧襯墊組件
1067‧‧‧圓形屏蔽
1072‧‧‧處理氣體供應源
1074‧‧‧處理氣體入口
1075‧‧‧流動路徑
1078‧‧‧氣體出口
1080‧‧‧真空泵
1090‧‧‧基座支撐結構
1092‧‧‧第一支撐臂
1100‧‧‧外軸件
1105‧‧‧第二支撐臂
1110‧‧‧墊
1115‧‧‧延伸部
1120‧‧‧周邊
1125‧‧‧開口
1200‧‧‧開口
1205‧‧‧參考表面
1210‧‧‧上表面
1215‧‧‧喇叭形頭部
1220‧‧‧成角度側壁
1225‧‧‧成角度側
1230‧‧‧凸起部分
為使本揭示的上述特徵可詳細地被理解，本揭示（簡短概要如上）的更特定描述可參照實施例而得，該等實施例之一些係繪示於隨附圖式中。然而，應注意隨附圖式僅圖示本揭示之典型實施例，而非視為限定本揭示的保護範疇，本揭示可接納其他等效實施例。
第1圖描繪適合於實踐本揭示的示例性處理設備的示意圖。
第2圖係為根據本揭示的一個實施例的裝載閘腔室的橫截面圖。
第3A圖描繪裝載閘腔室中的載體托持器的一個實施例。
第3B圖係為第一載體托持器與第二載體托持器的另一實施例的等距視圖。
第4A圖至第4G圖係為圖示第1圖的工廠介面、裝載閘腔室、及轉移腔室之間的基板轉移順序的各種視圖。
第5A圖至第5C圖係為冷卻台板以及與裝載閘腔室的冷卻台板相關聯的其他部件的各種視圖。
第6圖係為冷卻台板與載體的一部分的示意性橫截面圖。
第7A圖至第7D圖係為圖示裝載閘腔室的細節的各種視圖。
第8圖係為經由可撓連接構件耦接到支撐板的馬達的放大剖面圖。
第9A圖及第9B圖係為裝載閘腔室的等距視圖，以圖示真空系統的細節。
第10圖係為根據一個實施例的處理腔室的示意性剖面圖。
第11圖係為第10圖的的基座的等距視圖。
第12圖係為第10圖的基座與載體的一部分的放大剖面圖。
為促進理解，各圖中相同的元件符號儘可能指定相同的元件。預期一個實施例的元件和特徵可有利地併入其他實施例，在此不另外詳述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記)
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國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記)
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Claims (20)

  1. 一種基板處理系統，包含： 一轉移腔室； 一基板輸入/輸出腔室，耦接到該轉移腔室；以及 一處理腔室，耦接到該轉移腔室；其中該基板輸入/輸出腔室包括複數個堆疊載體托持器，而該等複數個堆疊載體托持器中之一者包括一基板載體，以在其上支撐一基板。
  2. 如請求項1所述之處理系統，其中該等堆疊載體托持器中之每一者包括從其延伸以支撐該載體的複數個支撐構件。
  3. 如請求項1所述之處理系統，其中該基板輸入/輸出腔室包括一台板，該台板具有可移動地設置成穿過其中的複數個提升銷。
  4. 如請求項3所述之處理系統，其中該等提升銷中之每一者包含一尖端及一軸件，而該尖端係由比該軸件的該材料更軟的一材料製成。
  5. 如請求項3所述之處理系統，其中該等提升銷中之每一者可操作地耦接到一專用致動器。
  6. 如請求項3所述之處理系統，其中該等提升銷中之每一者係設置於形成於該台板的開口中，而該等開口中之每一者流體耦接到一真空系統。
  7. 如請求項3所述之處理系統，其中該等提升銷中之每一者係耦接到包含一底座及一馬達的一基板提升機構。
  8. 如請求項1所述之處理系統，其中該台板包括嵌入其中的一熱轉移元件。
  9. 如請求項1所述之處理系統，其中該台板包括複數個對準墊，以用於讓該載體對準中心。
  10. 如請求項1所述之處理系統，其中該等處理腔室中之每一者包括一基座，該基座具有形成其中的一凹槽，以用於接收該載體。
  11. 如請求項10所述之處理系統，其中該基座係由一基板支撐結構所支撐。
  12. 如請求項11所述之處理系統，其中該基座支撐結構包括複數個載體提升銷。
  13. 如請求項12所述之處理系統，其中該等載體提升銷中之每一者係容納於與該凹槽相鄰的一開口中。
  14. 一種裝載閘腔室，包含： 一台板，具有嵌入其中的一熱轉移元件； 複數個載體托持器，定位成環繞該台板； 複數個支撐構件，從該等堆疊載體托持器中之每一者延伸；以及 一載體，定位於該等複數個堆疊載體托持器中之一者的該等支撐構件上。
  15. 如請求項14所述之裝載閘腔室，其中該等載體托持器中之每一者包括從其延伸以支撐該載體的複數個支撐構件。
  16. 如請求項14所述之裝載閘腔室，進一步包含一台板，該台板具有可移動地設置成穿過其中的複數個提升銷。
  17. 如請求項16所述之裝載閘腔室，其中該等提升銷中之每一者包含一尖端及一軸件，而該尖端係由比該軸件的該材料更軟的一材料製成。
  18. 如請求項16所述之裝載閘腔室，其中該等提升銷中之每一者可操作地耦接到一專用致動器。
  19. 如請求項16所述之裝載閘腔室，其中該等提升銷中之每一者係設置於形成於該台板的開口中，而該等開口中之每一者流體耦接到一真空系統。
  20. 一種處理腔室，包含： 一基座，具有形成其中而與其一周邊相鄰的一凹槽；以及 一基板支撐結構，包括複數個載體提升銷，其中該等載體提升銷中之每一者係容納於與該凹槽相鄰的一開口中。
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