CN116076163A - 三维存储器及其制备方法、电子设备 - Google Patents

三维存储器及其制备方法、电子设备 Download PDF

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Publication number
CN116076163A
CN116076163A CN202080103591.9A CN202080103591A CN116076163A CN 116076163 A CN116076163 A CN 116076163A CN 202080103591 A CN202080103591 A CN 202080103591A CN 116076163 A CN116076163 A CN 116076163A
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China
Prior art keywords
bonding layer
dimensional memory
read
chip
dimensional
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CN202080103591.9A
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CN116076163A8 (zh
Inventor
江安全
杨喜超
张岩
江钧
柴晓杰
魏侠
秦健鹰
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Fudan University
Huawei Technologies Co Ltd
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Fudan University
Huawei Technologies Co Ltd
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Publication of CN116076163A publication Critical patent/CN116076163A/zh
Publication of CN116076163A8 publication Critical patent/CN116076163A8/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/50—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the boundary region between the core and peripheral circuit regions

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  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

一种三维存储器及其制备方法、电子设备。三维存储器包括互连的第一芯片和第二芯片。第一芯片包括层叠设置的三维存储阵列和第一键合层，第一键合层中的多个第一表面电极与三维存储阵列对应耦接。第二芯片包括层叠设置的读写电路和第二键合层，第二键合层中的多个第二表面电极与读写电路对应耦接。第一芯片和第二芯片的互连，通过第一键合层和第二键合层的键合实现。并且，第一键合层中的第一表面电极与第二键合层中的第二表面电极一一对应的耦接。

Description

PCT国内申请，说明书已公开。

Claims (17)

  1. PCT国内申请，权利要求书已公开。
CN202080103591.9A 2020-09-29 2020-09-29 三维存储器及其制备方法、电子设备 Pending CN116076163A (zh)

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PCT/CN2020/119098 WO2022067587A1 (zh) 2020-09-29 2020-09-29 三维存储器及其制备方法、电子设备

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CN116076163A true CN116076163A (zh) 2023-05-05
CN116076163A8 CN116076163A8 (zh) 2023-07-07

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WO (1) WO2022067587A1 (zh)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190363001A1 (en) * 2010-11-18 2019-11-28 Monolithic 3D Inc. 3d semiconductor memory device and structure
EP3580782A4 (en) * 2017-08-21 2020-12-02 Yangtze Memory Technologies Co., Ltd. THREE-DIMENSIONAL MEMORY COMPONENTS AND METHOD FOR SHAPING THEM
CN109219885A (zh) * 2018-07-20 2019-01-15 长江存储科技有限责任公司 三维存储器件
CN109378313B (zh) * 2018-09-23 2020-10-30 复旦大学 一种低功耗三维非易失性存储器及其制备方法
KR20210114016A (ko) * 2019-04-30 2021-09-17 양쯔 메모리 테크놀로지스 씨오., 엘티디. 프로세서 및 낸드 플래시 메모리를 갖는 접합된 반도체 소자 및 이를 형성하는 방법
CN112635476B (zh) * 2019-10-12 2023-08-08 长江存储科技有限责任公司 具有氢阻挡层的三维存储设备及其制造方法
WO2021072692A1 (en) * 2019-10-17 2021-04-22 Yangtze Memory Technologies Co., Ltd. Backside deep isolation structures for semiconductor device arrays

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CN116076163A8 (zh) 2023-07-07
WO2022067587A1 (zh) 2022-04-07

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Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CI02 Correction of invention patent application
CI02 Correction of invention patent application

Correction item: PCT international application to national stage day

Correct: 2023.02.28

False: 2023.02.27

Number: 18-02

Volume: 39

Correction item: PCT international application to national stage day

Correct: 2023.02.28

False: 2023.02.27

Number: 18-02

Page: The title page

Volume: 39