CN116034455A - 蚀刻方法和等离子体处理系统 - Google Patents

蚀刻方法和等离子体处理系统 Download PDF

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Publication number
CN116034455A
CN116034455A CN202280005781.6A CN202280005781A CN116034455A CN 116034455 A CN116034455 A CN 116034455A CN 202280005781 A CN202280005781 A CN 202280005781A CN 116034455 A CN116034455 A CN 116034455A
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CN
China
Prior art keywords
gas
reaction
silicon
etching
containing film
Prior art date
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Pending
Application number
CN202280005781.6A
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English (en)
Chinese (zh)
Inventor
须田隆太郎
户村幕树
木原嘉英
三浦太树
朴宰永
福永裕介
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN116034455A publication Critical patent/CN116034455A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H10P50/242—
    • H10P50/268—
    • H10P50/283—
    • H10P50/71—
    • H10P50/73—
    • H10P72/0421—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Inorganic Chemistry (AREA)
CN202280005781.6A 2021-04-08 2022-03-31 蚀刻方法和等离子体处理系统 Pending CN116034455A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163172316P 2021-04-08 2021-04-08
US63/172,316 2021-04-08
PCT/JP2022/016596 WO2022215649A1 (ja) 2021-04-08 2022-03-31 エッチング方法及びプラズマ処理システム

Publications (1)

Publication Number Publication Date
CN116034455A true CN116034455A (zh) 2023-04-28

Family

ID=83546114

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280005781.6A Pending CN116034455A (zh) 2021-04-08 2022-03-31 蚀刻方法和等离子体处理系统

Country Status (6)

Country Link
US (1) US20230251567A1 (enExample)
JP (2) JP7529902B2 (enExample)
KR (1) KR20230165190A (enExample)
CN (1) CN116034455A (enExample)
TW (1) TWI893291B (enExample)
WO (1) WO2022215649A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202401563A (zh) * 2022-06-10 2024-01-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理系統
WO2025106307A1 (en) * 2023-11-17 2025-05-22 Lam Research Corporation Selective etch of stack using a hydrogen and fluorine containing gas and an -oh containing gas

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267242A (ja) * 1992-03-18 1993-10-15 Mitsubishi Electric Corp プラズマエッチングを用いた微細加工方法
JPH08181116A (ja) * 1994-12-26 1996-07-12 Mitsubishi Electric Corp ドライエッチング方法及びドライエッチング装置
JP2001007080A (ja) * 1999-06-24 2001-01-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2003347260A (ja) * 2002-05-22 2003-12-05 Tokyo Electron Ltd 処理装置及び基板処理方法
JP5308080B2 (ja) * 2008-06-18 2013-10-09 Ｓｐｐテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
JP2012049376A (ja) 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
CN110735181A (zh) 2013-08-09 2020-01-31 应用材料公司 于外延生长之前预清洁基板表面的方法和设备
JP6435667B2 (ja) * 2014-07-01 2018-12-12 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
JP6423643B2 (ja) 2014-08-08 2018-11-14 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6516603B2 (ja) * 2015-04-30 2019-05-22 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP6643045B2 (ja) 2015-11-05 2020-02-12 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6568822B2 (ja) * 2016-05-16 2019-08-28 東京エレクトロン株式会社 エッチング方法
JP6619703B2 (ja) * 2016-06-28 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス エッチング方法
US9997366B2 (en) * 2016-10-19 2018-06-12 Lam Research Corporation Silicon oxide silicon nitride stack ion-assisted etch
JP6812284B2 (ja) * 2017-03-28 2021-01-13 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP6812880B2 (ja) 2017-03-29 2021-01-13 東京エレクトロン株式会社 基板処理方法及び記憶媒体。
US20190362983A1 (en) * 2018-05-23 2019-11-28 Applied Materials, Inc. Systems and methods for etching oxide nitride stacks
WO2019138654A1 (ja) * 2018-10-26 2019-07-18 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
WO2021090798A1 (ja) * 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法

Also Published As

Publication number Publication date
US20230251567A1 (en) 2023-08-10
WO2022215649A1 (ja) 2022-10-13
TW202301465A (zh) 2023-01-01
KR20230165190A (ko) 2023-12-05
TWI893291B (zh) 2025-08-11
JPWO2022215649A1 (enExample) 2022-10-13
JP7529902B2 (ja) 2024-08-06
JP2024150701A (ja) 2024-10-23

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