JP7529902B2 - エッチング方法及びプラズマ処理システム - Google Patents

エッチング方法及びプラズマ処理システム Download PDF

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Publication number
JP7529902B2
JP7529902B2 JP2023512996A JP2023512996A JP7529902B2 JP 7529902 B2 JP7529902 B2 JP 7529902B2 JP 2023512996 A JP2023512996 A JP 2023512996A JP 2023512996 A JP2023512996 A JP 2023512996A JP 7529902 B2 JP7529902 B2 JP 7529902B2
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gas
reaction
silicon
etching
process gas
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Japanese (ja)
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JPWO2022215649A1 (enExample
Inventor
隆太郎 須田
幕樹 戸村
嘉英 木原
太樹 三浦
宰永 朴
裕介 福永
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H10P50/242—
    • H10P50/268—
    • H10P50/283—
    • H10P50/71—
    • H10P50/73—
    • H10P72/0421—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Inorganic Chemistry (AREA)
JP2023512996A 2021-04-08 2022-03-31 エッチング方法及びプラズマ処理システム Active JP7529902B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024120636A JP2024150701A (ja) 2021-04-08 2024-07-25 エッチング方法及びプラズマ処理システム

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163172316P 2021-04-08 2021-04-08
US63/172,316 2021-04-08
PCT/JP2022/016596 WO2022215649A1 (ja) 2021-04-08 2022-03-31 エッチング方法及びプラズマ処理システム

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JP2024120636A Division JP2024150701A (ja) 2021-04-08 2024-07-25 エッチング方法及びプラズマ処理システム

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JPWO2022215649A1 JPWO2022215649A1 (enExample) 2022-10-13
JP7529902B2 true JP7529902B2 (ja) 2024-08-06

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JP2024120636A Pending JP2024150701A (ja) 2021-04-08 2024-07-25 エッチング方法及びプラズマ処理システム

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Country Status (6)

Country Link
US (1) US20230251567A1 (enExample)
JP (2) JP7529902B2 (enExample)
KR (1) KR20230165190A (enExample)
CN (1) CN116034455A (enExample)
TW (1) TWI893291B (enExample)
WO (1) WO2022215649A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202401563A (zh) * 2022-06-10 2024-01-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理系統
WO2025106307A1 (en) * 2023-11-17 2025-05-22 Lam Research Corporation Selective etch of stack using a hydrogen and fluorine containing gas and an -oh containing gas

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007080A (ja) 1999-06-24 2001-01-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2003347260A (ja) 2002-05-22 2003-12-05 Tokyo Electron Ltd 処理装置及び基板処理方法
JP2010003725A (ja) 2008-06-18 2010-01-07 Sumitomo Precision Prod Co Ltd シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
JP2012049376A (ja) 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2016015382A (ja) 2014-07-01 2016-01-28 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
JP2016528734A (ja) 2013-08-09 2016-09-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長に先立って基板表面を予洗浄するための方法及び装置
JP2016213427A (ja) 2015-04-30 2016-12-15 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP2017092144A (ja) 2015-11-05 2017-05-25 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2017208387A (ja) 2016-05-16 2017-11-24 東京エレクトロン株式会社 エッチング方法
JP2018166147A (ja) 2017-03-28 2018-10-25 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP2018170380A (ja) 2017-03-29 2018-11-01 東京エレクトロン株式会社 基板処理方法及び記憶媒体。
WO2021090798A1 (ja) 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267242A (ja) * 1992-03-18 1993-10-15 Mitsubishi Electric Corp プラズマエッチングを用いた微細加工方法
JPH08181116A (ja) * 1994-12-26 1996-07-12 Mitsubishi Electric Corp ドライエッチング方法及びドライエッチング装置
JP6423643B2 (ja) 2014-08-08 2018-11-14 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6619703B2 (ja) * 2016-06-28 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス エッチング方法
US9997366B2 (en) * 2016-10-19 2018-06-12 Lam Research Corporation Silicon oxide silicon nitride stack ion-assisted etch
US20190362983A1 (en) * 2018-05-23 2019-11-28 Applied Materials, Inc. Systems and methods for etching oxide nitride stacks
WO2019138654A1 (ja) * 2018-10-26 2019-07-18 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007080A (ja) 1999-06-24 2001-01-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2003347260A (ja) 2002-05-22 2003-12-05 Tokyo Electron Ltd 処理装置及び基板処理方法
JP2010003725A (ja) 2008-06-18 2010-01-07 Sumitomo Precision Prod Co Ltd シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
JP2012049376A (ja) 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2016528734A (ja) 2013-08-09 2016-09-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長に先立って基板表面を予洗浄するための方法及び装置
JP2016015382A (ja) 2014-07-01 2016-01-28 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
JP2016213427A (ja) 2015-04-30 2016-12-15 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP2017092144A (ja) 2015-11-05 2017-05-25 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2017208387A (ja) 2016-05-16 2017-11-24 東京エレクトロン株式会社 エッチング方法
JP2018166147A (ja) 2017-03-28 2018-10-25 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP2018170380A (ja) 2017-03-29 2018-11-01 東京エレクトロン株式会社 基板処理方法及び記憶媒体。
WO2021090798A1 (ja) 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法

Also Published As

Publication number Publication date
US20230251567A1 (en) 2023-08-10
WO2022215649A1 (ja) 2022-10-13
TW202301465A (zh) 2023-01-01
KR20230165190A (ko) 2023-12-05
TWI893291B (zh) 2025-08-11
CN116034455A (zh) 2023-04-28
JPWO2022215649A1 (enExample) 2022-10-13
JP2024150701A (ja) 2024-10-23

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