TWI893291B - 蝕刻方法及電漿處理系統 - Google Patents

蝕刻方法及電漿處理系統

Info

Publication number
TWI893291B
TWI893291B TW111112774A TW111112774A TWI893291B TW I893291 B TWI893291 B TW I893291B TW 111112774 A TW111112774 A TW 111112774A TW 111112774 A TW111112774 A TW 111112774A TW I893291 B TWI893291 B TW I893291B
Authority
TW
Taiwan
Prior art keywords
gas
reaction
silicon
etching
containing film
Prior art date
Application number
TW111112774A
Other languages
English (en)
Chinese (zh)
Other versions
TW202301465A (zh
Inventor
須田隆太郎
戸村幕樹
木原嘉英
三浦太樹
朴宰永
福永裕介
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202301465A publication Critical patent/TW202301465A/zh
Application granted granted Critical
Publication of TWI893291B publication Critical patent/TWI893291B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H10P50/242—
    • H10P50/268—
    • H10P50/283—
    • H10P50/71—
    • H10P50/73—
    • H10P72/0421—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Inorganic Chemistry (AREA)
TW111112774A 2021-04-08 2022-04-01 蝕刻方法及電漿處理系統 TWI893291B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163172316P 2021-04-08 2021-04-08
US63/172,316 2021-04-08
PCT/JP2022/016596 WO2022215649A1 (ja) 2021-04-08 2022-03-31 エッチング方法及びプラズマ処理システム
WOPCT/JP2022/016596 2022-03-31

Publications (2)

Publication Number Publication Date
TW202301465A TW202301465A (zh) 2023-01-01
TWI893291B true TWI893291B (zh) 2025-08-11

Family

ID=83546114

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111112774A TWI893291B (zh) 2021-04-08 2022-04-01 蝕刻方法及電漿處理系統

Country Status (6)

Country Link
US (1) US20230251567A1 (enExample)
JP (2) JP7529902B2 (enExample)
KR (1) KR20230165190A (enExample)
CN (1) CN116034455A (enExample)
TW (1) TWI893291B (enExample)
WO (1) WO2022215649A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202401563A (zh) * 2022-06-10 2024-01-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理系統
WO2025106307A1 (en) * 2023-11-17 2025-05-22 Lam Research Corporation Selective etch of stack using a hydrogen and fluorine containing gas and an -oh containing gas

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160042919A1 (en) * 2014-08-08 2016-02-11 Tokyo Electron Limited Etching method of multilayered film
TW201830465A (zh) * 2016-10-19 2018-08-16 美商蘭姆研究公司 矽氧化物矽氮化物堆疊離子輔助蝕刻
US20180286695A1 (en) * 2017-03-28 2018-10-04 Tokyo Electron Limited Etching method and recording medium
US20190362983A1 (en) * 2018-05-23 2019-11-28 Applied Materials, Inc. Systems and methods for etching oxide nitride stacks
US20200105539A1 (en) * 2017-03-29 2020-04-02 Tokyo Electron Limited Substrate processing method and storage medium
US20200227270A1 (en) * 2018-10-26 2020-07-16 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267242A (ja) * 1992-03-18 1993-10-15 Mitsubishi Electric Corp プラズマエッチングを用いた微細加工方法
JPH08181116A (ja) * 1994-12-26 1996-07-12 Mitsubishi Electric Corp ドライエッチング方法及びドライエッチング装置
JP2001007080A (ja) * 1999-06-24 2001-01-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2003347260A (ja) * 2002-05-22 2003-12-05 Tokyo Electron Ltd 処理装置及び基板処理方法
JP5308080B2 (ja) * 2008-06-18 2013-10-09 Ｓｐｐテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
JP2012049376A (ja) 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
CN110735181A (zh) 2013-08-09 2020-01-31 应用材料公司 于外延生长之前预清洁基板表面的方法和设备
JP6435667B2 (ja) * 2014-07-01 2018-12-12 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
JP6516603B2 (ja) * 2015-04-30 2019-05-22 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP6643045B2 (ja) 2015-11-05 2020-02-12 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6568822B2 (ja) * 2016-05-16 2019-08-28 東京エレクトロン株式会社 エッチング方法
JP6619703B2 (ja) * 2016-06-28 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス エッチング方法
WO2021090798A1 (ja) * 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160042919A1 (en) * 2014-08-08 2016-02-11 Tokyo Electron Limited Etching method of multilayered film
TW201830465A (zh) * 2016-10-19 2018-08-16 美商蘭姆研究公司 矽氧化物矽氮化物堆疊離子輔助蝕刻
US20180286695A1 (en) * 2017-03-28 2018-10-04 Tokyo Electron Limited Etching method and recording medium
US20200105539A1 (en) * 2017-03-29 2020-04-02 Tokyo Electron Limited Substrate processing method and storage medium
US20190362983A1 (en) * 2018-05-23 2019-11-28 Applied Materials, Inc. Systems and methods for etching oxide nitride stacks
US20200227270A1 (en) * 2018-10-26 2020-07-16 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
US20230251567A1 (en) 2023-08-10
WO2022215649A1 (ja) 2022-10-13
TW202301465A (zh) 2023-01-01
KR20230165190A (ko) 2023-12-05
CN116034455A (zh) 2023-04-28
JPWO2022215649A1 (enExample) 2022-10-13
JP7529902B2 (ja) 2024-08-06
JP2024150701A (ja) 2024-10-23

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