CN115986433B - TR module architecture and process method thereof - Google Patents
TR module architecture and process method thereof Download PDFInfo
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Abstract
The invention discloses a TR module framework and a process method thereof, wherein the TR module framework comprises a multi-layer mixed pressing plate arranged in a module cavity, functional devices and a plurality of chips are integrated on the multi-layer mixed pressing plate, a plurality of functional connecting devices are embedded in the module cavity, transmission gold wires bonded with the functional connecting devices are arranged on the multi-layer mixed pressing plate, and grounding gold wires are arranged on two sides of each transmission gold wire for bonding the module cavity with the multi-layer mixed pressing plate. According to the invention, the chip and the functional device are integrated on the multi-layer mixed pressure plate, the multi-layer mixed pressure plate and the module cavity form a ground-signal-ground structure through the transmission gold wire and the grounding gold wire, the grounding property of the multi-layer mixed pressure plate is ensured, and the functional connecting device is embedded in the module cavity and is bonded with the multi-layer mixed pressure plate through the transmission gold wire, so that the air tightness of the TR module is ensured.
Description
Technical Field
The invention belongs to the technical field of phased array antennas, and particularly relates to a TR module architecture and a process method thereof.
Background
In the phased array antenna (radar) field, a T/R module is used as a core component of the whole phased array, the performance of the module almost determines the performance of the whole phased array, the module is generally divided into a radio frequency part and a low frequency part, the radio frequency is used for guaranteeing the performance of the module, the low frequency is used for supplying power to control signals such as a radio frequency chip and the like, a conventional architecture is a structure with separated radio frequency and low frequency power supply and is equivalent to two paths, as disclosed in China patent application publication No. CN113271118A, the low frequency part adopts a radio frequency power supply board to process the low frequency control and power supply signals, then a low frequency bonding pad and a radio frequency chip bonding pad are bonded to realize power supply interconnection, the radio frequency part is generally transited through microstrip before and after the radio frequency chip, and an output end and an input end realize a radio frequency path through a spot welding insulator, and the structure is specifically shown in fig. 1; however, this module architecture has some drawbacks, in particular as follows:
1. microstrip transition is needed before and after the radio frequency chip, more microstrip transition is needed for the more chips, and the process production is complex;
2. in order to make the whole radio frequency signal on the same horizontal plane, the radio frequency transition performance is relatively good, in the design process, it is hoped that the height difference does not exist between the feeding and antenna end connectors, however, as shown in fig. 1, in practice, the height difference exists between the feeding and antenna ends usually due to the reason of the channel spacing, in order to eliminate the height difference, on the basis of the architecture shown in fig. 1, a mode of transition of the microstrip to the chip position is usually adopted, namely, the microstrip is divided into a plurality of small sections, and the whole radio frequency signal is on the same horizontal plane by adjusting the positions of each chip and the microstrip positions between two adjacent chips, but the mode is complex in process, and is easy to deteriorate the radio frequency transition performance due to the height difference between the chips, especially in the case of high frequency band or large height difference;
3. the module has a complex integral structure, holes are needed to be formed in the structural cavity and used for installing and positioning the chip and the microstrip, the structural member is complex to process, and the cost is high;
4. the position of each chip and the position of the microstrip are designed through microstrip transition, and the microstrip and the radio frequency power supply board are designed, so that the whole process design is very complex;
5. the processing technology is complex, the installation sequence is also required, the needle of the radio frequency connector is lapped on the microstrip, and part of the microstrip is arranged right below the connector needle, so that the length and the welding sequence of the microstrip are required to be considered after the radio frequency connector is welded, and the design difficulty, the installation difficulty and the repair difficulty are increased.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a TR module framework, wherein a chip is integrated on a multi-layer mixed pressure plate, the multi-layer mixed pressure plate and a module cavity form a ground-signal-ground structure through a transmission gold wire and a grounding gold wire, the grounding property of the multi-layer mixed pressure plate is ensured, a functional connecting device is embedded in the module cavity and is bonded with the multi-layer mixed pressure plate through the transmission gold wire, the air tightness of the TR module is ensured, meanwhile, the chip and a bonding pad nearby the chip are positioned on the same horizontal plane in a mode that the height difference exists in the bonding of the gold wire with a certain arc length through the transition of a connector, the influence on the radio frequency transition performance is small, the situation of mutual lap joint between the connector and the multi-layer mixed pressure plate is avoided, and the procedure can be adjusted according to practical conditions.
The aim of the invention is achieved by the following technical scheme:
the utility model provides a TR module framework, includes the multilayer mixed board of installing in the module cavity, has integrated functional device and a plurality of chip on the multilayer mixed board, still inlay in the module cavity and be equipped with a plurality of functional connection devices, be provided with on the multilayer mixed board with the transmission gold wire of functional connection device bonding, and every transmission gold wire both sides still are provided with ground connection gold wire, in order to supply the module cavity and multilayer mixed board bonding.
In one embodiment, the functional connection device includes a power supply connector, a power supply radio frequency connector, an antenna radio frequency connector and a control connector, and the functional connection device is sintered in the module cavity.
In one embodiment, the functional connection devices are respectively embedded around the module cavity, the power supply connectors and the control connectors are respectively arranged on two sides of the module cavity, and the power supply connectors and the control connectors are designed on two sides of the module through the embodiment, so that the layout of the whole antenna module is not affected, and the integration level of the antenna module is further improved.
In an embodiment, the antenna module further comprises a cover plate, the cover plate is welded on the module cavity to seal the multilayer mixed pressure plate, and through the embodiment, after the multilayer mixed pressure plate, the chip and the functional connecting device are arranged, the cover plate is sealed and welded on the module cavity in a welding mode, so that the antenna module can be assembled.
In one embodiment, the radio frequency connector is provided with an inner core connected with the transmission metal wire, the inner core is arranged in a shell of the radio frequency connector, and part of the side wall of the shell is of a square structure.
The invention also provides a process method based on the TR module architecture, which comprises the following steps:
step A, sintering a plurality of functional connecting devices in a module cavity;
step B, welding the chip and the functional device on a multi-layer mixed pressure plate, and then installing the multi-layer mixed pressure plate in a module cavity;
step C, the multilayer mixed pressure plate is in soft connection with the functional connecting device;
wherein the processing sequence between the step A and the step B can be interchanged;
because the multilayer mixed pressing plate is provided with the transmission gold wires bonded with the functional connecting devices, the transmission gold wires are pre-buried in the module cavity, namely, the processing step A and the processing step B have no necessary sequence relation, the multilayer mixed pressing plate can be firstly arranged in the module cavity and then the functional connectors are sintered in the module cavity, the working procedures can be adjusted according to actual conditions, the welding times are less in the whole processing process, the welding temperature gradient is easier to adjust, and the welding temperature of the working procedures can be adjusted according to actual process conditions so as to reduce the cost.
In one embodiment, in the step C, soft connection is completed between the functional connection device and the multi-layer hybrid board through gold wire bonding;
according to the embodiment, the gold wire bonding radio frequency and low-frequency power supply channels are adopted, so that the response to vibration is small, and the reliability of the whole machine is improved.
In one embodiment, the step C further includes disposing a transmission gold wire on the multi-layer hybrid board for bonding with the functional connection device, and disposing grounding gold wires on two sides of the transmission gold wire for bonding between the multi-layer hybrid board and the module cavity;
according to the embodiment, the control connector, the power supply radio frequency connector and the antenna radio frequency connector are all in gold wire bonding with the multilayer mixed pressure plate, specifically, transmission gold wires corresponding to the positions of all functional connecting devices are arranged on the multilayer mixed pressure plate, for example, a plurality of radio frequency transmission gold wires are arranged in the area corresponding to the positions of the power supply radio frequency connector, an inner core of the power supply radio frequency connector is connected with the multilayer mixed pressure plate through the radio frequency transmission gold wires, two sides of each radio frequency transmission gold wire are also provided with grounding gold wires, the grounding gold wires on the multilayer mixed pressure plate are bonded with a structural cavity, the multilayer mixed pressure plate and a module cavity form a ground-signal-ground structure, the ground loop is guaranteed to be continuous, the functional connecting devices are embedded in the module cavity and are bonded with the multilayer mixed pressure plate through the transmission gold wires, the air tightness of the whole antenna module is guaranteed, meanwhile, a plurality of chips are integrated on the multilayer mixed pressure plate, the chips are positioned on the same horizontal plane through the mode that the chips are in transition to the chip positions through the connectors, the gold wire bonding with a certain arc length is in a height difference mode, the chips are positioned on the same horizontal plane, the chips are in the transition mode, the transition mode of the chips are in the chip positions are in the transition mode, the performance is greatly influenced, namely, the performance is reduced, and the transition mode is achieved by the micro-band, and the performance is lower than the transition mode.
In one embodiment, in the step B, the multi-layer mixed pressure plate is in threaded connection with the module cavity, or the multi-layer mixed pressure plate is welded in the module cavity, or the multi-layer mixed pressure plate is adhered in the module cavity;
through this embodiment, make things convenient for operating personnel to install mixed clamp plate in the module cavity according to actual conditions.
In one embodiment, after step C, further comprising:
step D, welding a cover plate on the module cavity to seal the multi-layer mixed pressure plate;
according to the embodiment, after the multi-layer mixed pressure plate and the functional connecting device are installed, the final capping operation is performed, and then the assembly of the TR module is completed.
The invention has the beneficial effects that:
the TR module has high integral integration level, a chip is integrated on the multilayer mixed pressure plate, and the multilayer mixed pressure plate integrates radio frequency and low frequency into a path in a gold wire bonding mode with the functional connecting device, so that the structure and the process are simplified; meanwhile, the multi-layer mixed pressure plate and the module cavity form a ground-signal-ground structure, so that the ground loop is ensured to be continuous; the mode that the connector is transited to the chip position and the gold wire bonding with a certain arc length has a height difference is adopted, so that the chip and the adjacent bonding pad are positioned on the same horizontal plane, compared with the mode of microstrip transition, the influence on the radio frequency transition performance is greatly reduced, the situation that the connector and the multilayer mixed pressure plate are not overlapped with each other is avoided, and the procedure can be adjusted according to actual conditions; the process is simpler, the welding times are less, the welding temperature gradient is easier to adjust, the welding temperature of the working procedure can be adjusted according to the actual process condition so as to reduce the cost, and meanwhile, the condition that the microstrip and the chip are welded together is avoided, so that the repair is convenient.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings. Wherein:
fig. 1 shows a schematic structure of an antenna module in the prior art;
FIG. 2 shows a schematic structural diagram of the present invention;
FIG. 3 shows a schematic view of the deployment structure of the present invention;
FIG. 4 shows an enlarged partial schematic view at I in FIG. 3;
FIG. 5 shows a schematic diagram of the structure of the feed RF connector of the present invention;
in the drawings, like parts are designated with like reference numerals. The figures are not to scale.
Reference numerals:
the antenna comprises a 1-module cavity, a 2-multilayer mixed board, a 3-chip, a 4-radio frequency transmission gold wire, a 5-grounding gold wire, a 6-power supply connector, a 7-power supply radio frequency connector, an 8-antenna radio frequency connector, a 9-control connector and a 10-inner core.
Detailed Description
The invention will be further described with reference to the accompanying drawings.
As shown in fig. 1, the current TR module architecture is mostly divided into two parts of radio frequency and low frequency, the low frequency part forms a first path (connector+radio frequency power supply board), that is, the radio frequency power supply board is used for processing low frequency control and power supply signals, then a low frequency bonding pad and a radio frequency chip bonding pad are bonded to realize power supply interconnection, the radio frequency part forms a second path (chip+microstrip+connector), that is, transition is performed through front and rear microstrip of the radio frequency chip, the output end and the input end realize the radio frequency path through spot welding insulators, and the structure and the process method are complex; meanwhile, although the height difference does not exist between the feeding and antenna end connectors in the design, due to the fact that the channel spacing exists in practice, as shown in fig. 1, the height difference exists between the feeding and antenna ends, and based on the structure, the microstrip is transited to the chip position, namely, the height difference is reserved between the chip and the microstrip position each time, the height difference is gradually eliminated, but due to the fact that the height difference exists between the chips, the influence on the radio frequency transition performance is larger, particularly in the case of high frequency band or large height difference, the more the chips are, the more the microstrip are transited, and the process is quite complex.
The invention provides a TR module architecture, which comprises a multi-layer mixed pressure plate 2 arranged in a module cavity 1, wherein functional devices and a plurality of chips 3 are integrated on the multi-layer mixed pressure plate 2, a plurality of functional connecting devices are embedded in the module cavity 1, transmission gold wires bonded with the functional connecting devices are arranged on the multi-layer mixed pressure plate 2, and grounding gold wires 5 are arranged on two sides of each transmission gold wire for bonding the module cavity 1 with the multi-layer mixed pressure plate 2;
it should be noted that, the functional devices include devices such as resistors and capacitors, and the pad is designed on the multi-layer mixed board for mounting the chips and the functional devices, as shown in fig. 2, 3 and 4, in this embodiment, the multiple chips 3 are integrated on the multi-layer mixed board 2, and then the multi-layer mixed board 2 is bonded with the multiple functional connection devices respectively through the transmission gold wires, so that the low frequency and the radio frequency are integrated into a path, and the multi-layer mixed board 2 is bonded with the module cavity 1 through the grounding gold wires 5, so that the multi-layer mixed board 2 and the module cavity form a ground-signal-ground structure, and the grounding property of the multi-layer mixed board is ensured;
specifically, as shown in fig. 3 and fig. 4, the feeding radio frequency connector 7 is bonded with the multilayer mixed board 2 through the radio frequency transmission gold wire 4, meanwhile, two sides of the radio frequency transmission gold wire 4 are provided with the grounding gold wire 5, the grounding gold wire 5 bonds the multilayer mixed board 2 with the module cavity 1, namely, one end of the grounding gold wire 5 is connected with the multilayer mixed board 2 during bonding, the other end of the grounding gold wire is connected with the module cavity 1, the grounding property of the multilayer mixed board is ensured, and the feeding radio frequency connector 7 is bonded in a mode that a certain arc length exists between the radio frequency transmission gold wire 4 and the feeding radio frequency connector, so that the height difference between a feeding end and the antenna end connector is eliminated, a bonding pad near the chip is positioned on the same horizontal plane, the connector is transited to the position of the chip 3, and compared with a micro-strip transition mode, the influence on radio frequency transition performance is remarkably reduced.
Further, the functional connection device comprises a power supply connector 6, a feed radio frequency connector 7, an antenna radio frequency connector 8 and a control connector 9, and the functional connection device is sintered in the module cavity 1;
specifically, the functional connection devices are respectively embedded around the module cavity 1, and the power supply connector 6 and the control connector 9 are respectively arranged at two sides of the module cavity 1; the module cavity 1 is internally provided with a plurality of mounting grooves, a plurality of connecting devices are embedded in the module cavity 1 in a sintering mode, so that the integration level of the whole antenna module is higher, meanwhile, the power supply connector 6 and the control connector 9 are designed at two sides of the module, the layout of the whole antenna module is not influenced, the integration level of the antenna module is further improved, and the functional connecting devices are embedded in the module cavity and are bonded with the multilayer mixed pressure plate through transmitting gold wires, so that the air tightness of the TR module is ensured;
further, the antenna module further comprises a cover plate, the cover plate is welded on the module cavity 1 to seal the multi-layer mixed pressure plate 2, and the assembly of the antenna module can be completed by sealing and welding the cover plate on the module cavity 1 in a welding mode;
in one embodiment, as shown in fig. 5, the radio frequency connector is provided with an inner core 10 connected with a transmission gold wire, the inner core 10 is arranged in a shell of the radio frequency connector, and part of side walls of the shell are in a square structure;
it should be noted that, during assembly, the radio frequency connector is sintered in the module cavity 1, the inner core 10 of the radio frequency connector is bonded with the multi-layer mixed pressing plate 2 through the transmission gold wire, that is, no lap joint condition exists between the radio frequency connector and the multi-layer mixed pressing plate 2, so that during assembly, the radio frequency connector can be sintered first, the multi-layer mixed pressing plate 2 can be installed first, the procedure can be adjusted according to practical conditions, and meanwhile, part of the side wall of the radio frequency connector shell is in a square structure, so that the plane of the bonding alloy wire does not rotate during welding.
The invention also provides a process method of the TR module architecture, which comprises the following steps:
step A, sintering a plurality of functional connecting devices in a module cavity;
step B, welding the chip and the functional device on the multilayer mixed pressing plate, and then installing the multilayer mixed pressing plate in the module cavity;
step C, the multilayer mixed pressure plate is flexibly connected with the functional connecting device;
step D, welding the cover plate on the module cavity to seal the multi-layer mixed pressure plate;
wherein, the processing sequence between the step A and the step B can be exchanged;
it should be noted that, as shown in fig. 3 and fig. 4, because the multi-layer mixed board 2 and the functional connection device are bonded through transmission gold wires, that is, there is no necessary sequence between the step a and the step B, the multi-layer mixed board 2 may be installed in the module cavity 1, then the plurality of functional connectors are sintered in the module cavity 1, and then the multi-layer mixed board 2 and the functional connection device are connected, that is, an operator may adjust the procedure according to the actual situation;
as shown in fig. 1, the conventional architecture is generally as follows:
s1, sintering a radio frequency connector and a low frequency connector on a structural cavity;
s2, welding the chip on a chip carrier (for matching the problem of mismatching of heat capacity of the chip and the structural cavity, preventing thermal stress from pulling crack);
s3, the micro-strip is welded on the structural cavity;
s4, the radio frequency power supply board is arranged on the structural cavity;
s5, a spot welding antenna connector, a feed connector, a microstrip (two ends) and a low-frequency power supply connector;
s6, gold wire bonding of the micro-strip-chip, the jet bias power supply board-chip, the radio frequency power supply board-low frequency connector;
s7, sealing the cover to ensure the airtight of the module cavity.
Compared with the prior art, obviously, the process steps are fewer, the whole process is simpler, the welding times are fewer, the process method in the prior art needs manual spot welding, the transition of the TR module framework provided by the invention basically uses gold wire bonding, the structure is simple, the automatic production is convenient, the efficiency is high, the method is suitable for batch production, the welding temperature gradient is easier to adjust, the actual process condition is convenient, the welding temperature of the working procedure is adjusted to reduce the cost, and meanwhile, in the design stage, the microstrip and the radio frequency power supply board are not required to be designed;
meanwhile, in the process method in the prior art, as the welding times are more, the welding temperature gradient is insufficient, the situation that the radio frequency power supply board needs to be welded together with the chip is easy to occur, and when repairing, the welded devices need to be removed at the same time, while the process method in the embodiment has less welding times, and each device can use different welding temperature gradients, so that the subsequent repairing is convenient;
specifically, in the step C, soft connection is completed between the functional connection device and the multilayer hybrid board 2 through gold wire bonding, that is, a gold wire bonding radio frequency and low frequency power supply path is adopted, so that response to vibration is small, and reliability of the whole machine is improved;
in the step C, the transmission gold wires bonded with the functional connection devices are arranged on the multilayer hybrid board 2, and the grounding gold wires 5 positioned at two sides of the transmission gold wires are arranged on the multilayer hybrid board 2, and the grounding gold wires 5 are bonded with the module cavity 1; namely, the control connector 9, the power supply connector 6, the feed radio frequency connector 7 and the antenna radio frequency connector 8 are all in gold wire bonding with the multilayer mixed board 2;
as shown in fig. 3 and fig. 4, specifically, transmission gold wires corresponding to the positions of the functional connection devices are arranged on the multi-layer hybrid board 2, for example, a plurality of radio frequency transmission gold wires 4 are arranged in the region corresponding to the position of the feed radio frequency connector 7, the inner core 10 of the feed radio frequency connector 7 is connected with the multi-layer hybrid board 2 through the radio frequency transmission gold wires 4, two sides of each radio frequency transmission gold wire 4 are also provided with grounding gold wires 5, the grounding gold wires 5 on the multi-layer hybrid board 2 are bonded with the module cavity 1, and a ground-signal-ground structure is formed between the multi-layer hybrid board 2 and the module cavity 1, so that the ground loop is continuous;
meanwhile, on the basis of the process method, the connector is transited to the chip position, so that the chip and the adjacent bonding pad are positioned on the same horizontal plane in a mode that the height difference exists in gold wire bonding with a certain arc length, and the degree of performance deterioration is greatly reduced in the mode that the connector is transited to the chip position relative to the microstrip and the chip position, namely the influence on the radio frequency transition performance is smaller in the mode, and the process is simpler;
the TR module framework provided by the invention has higher integration level, can enable the whole radio frequency signal to be on the same level under the condition of less influence on radio frequency transition performance, and meanwhile compared with the conventional framework, the corresponding process method reduces the process steps, obviously reduces the welding times, ensures that the welding temperature gradient is easier to adjust, can adjust the procedure welding temperature according to the actual process condition so as to reduce the cost, simultaneously, the whole processing procedure can be adjusted according to the actual process condition, is convenient to operate, has simple disassembly and assembly and repair processes, and can directly repair the PCB or the connector in the subsequent use process.
In the description of the present invention, it should be understood that the terms "upper," "lower," "bottom," "top," "front," "rear," "inner," "outer," "left," "right," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate description of the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be configured and operated in a particular orientation, and thus should not be construed as limiting the present invention.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that the different dependent claims and the features described herein may be combined in ways other than as described in the original claims. It is also to be understood that features described in connection with separate embodiments may be used in other described embodiments.
Claims (9)
1. The utility model provides a TR module framework, its characterized in that, including installing the multilayer mixed board in the module cavity, integrated functional device and many chips on the multilayer mixed board, functional device includes resistance and electric capacity, still inlay in the module cavity and be equipped with a plurality of functional connection devices, functional connection device includes power supply connector, feed radio frequency connector, antenna radio frequency connector and control connector, the functional connection device all sinters in the module cavity, be provided with on the multilayer mixed board with the transmission gold silk of functional connection device bonding, and every transmission gold silk both sides still are provided with ground connection gold silk, so that the module cavity bonds with the multilayer mixed board.
2. The TR module architecture of claim 1, wherein the functional connection devices are respectively embedded around the module cavity, and the power supply connector and the control connector are respectively disposed at two sides of the module cavity.
3. The TR module architecture of claim 1, further comprising a cover plate welded to said module cavity to enclose said multi-layer hybrid plate.
4. The TR module architecture of claim 1, wherein the radio frequency connector has an inner core connected to the transmission wire, the inner core being disposed in a housing of the radio frequency connector, and a portion of a side wall of the housing has a square structure.
5. A process of TR module architecture as claimed in any one of claims 1 to 4, comprising the steps of:
step A, sintering a plurality of functional connecting devices in a module cavity;
step B, welding the chip and the functional device on a multi-layer mixed pressure plate, and then installing the multi-layer mixed pressure plate in a module cavity;
step C, the multilayer mixed pressure plate is in soft connection with the functional connecting device;
wherein the processing sequence between the step A and the step B can be interchanged.
6. The process of claim 5, wherein in step C, the functional connection device and the multi-layer hybrid board are connected together by wire bonding.
7. The process of claim 6, wherein step C further comprises disposing a gold transmission wire on the multi-layer hybrid board for bonding with the functional connector, and disposing grounding wires on two sides of the gold transmission wire for bonding the multi-layer hybrid board with the module cavity.
8. The process of claim 5, wherein the multi-layer hybrid board is screwed to the module cavity, or the multi-layer hybrid board is welded in the module cavity, or the multi-layer hybrid board is bonded in the module cavity.
9. The process of claim 5, further comprising, after step C:
and D, welding a cover plate on the module cavity to seal the multi-layer mixed pressure plate.
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