CN1156979C - 半导体集成电路的输入缓冲器 - Google Patents
半导体集成电路的输入缓冲器 Download PDFInfo
- Publication number
- CN1156979C CN1156979C CNB001331167A CN00133116A CN1156979C CN 1156979 C CN1156979 C CN 1156979C CN B001331167 A CNB001331167 A CN B001331167A CN 00133116 A CN00133116 A CN 00133116A CN 1156979 C CN1156979 C CN 1156979C
- Authority
- CN
- China
- Prior art keywords
- circuit
- semiconductor integrated
- integrated circuit
- working method
- input buffer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000872 buffer Substances 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 claims description 39
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19944248A DE19944248C2 (de) | 1999-09-15 | 1999-09-15 | Inputbuffer einer integrierten Halbleiterschaltung |
DE19944248.7 | 1999-09-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1288290A CN1288290A (zh) | 2001-03-21 |
CN1156979C true CN1156979C (zh) | 2004-07-07 |
Family
ID=7922142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001331167A Expired - Fee Related CN1156979C (zh) | 1999-09-15 | 2000-09-15 | 半导体集成电路的输入缓冲器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6480039B1 (zh) |
EP (1) | EP1091491A1 (zh) |
JP (1) | JP2001111407A (zh) |
KR (1) | KR100725677B1 (zh) |
CN (1) | CN1156979C (zh) |
DE (1) | DE19944248C2 (zh) |
TW (1) | TW463462B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100506929B1 (ko) * | 2002-08-08 | 2005-08-09 | 삼성전자주식회사 | 동기형 반도체 메모리 장치의 입력버퍼 |
JP4736313B2 (ja) | 2002-09-10 | 2011-07-27 | 日本電気株式会社 | 薄膜半導体装置 |
DE10244516B4 (de) * | 2002-09-25 | 2006-11-16 | Infineon Technologies Ag | Integrierte Schaltung mit einer Eingangsschaltung |
JP3888338B2 (ja) * | 2003-07-24 | 2007-02-28 | ソニー株式会社 | 入力バッファ回路及び同回路を有する半導体装置 |
US8179345B2 (en) * | 2003-12-17 | 2012-05-15 | Samsung Electronics Co., Ltd. | Shared buffer display panel drive methods and systems |
US8144100B2 (en) | 2003-12-17 | 2012-03-27 | Samsung Electronics Co., Ltd. | Shared buffer display panel drive methods and systems |
US6891763B1 (en) | 2003-12-23 | 2005-05-10 | Infineon Technologies Ag | Input buffer with differential amplifier |
KR100611402B1 (ko) | 2004-07-26 | 2006-08-11 | 주식회사 하이닉스반도체 | 저전류 소모형 cke 버퍼 |
US20060261862A1 (en) * | 2005-05-23 | 2006-11-23 | Frank Baszler | Apparatus and method for preventing static current leakage when crossing from a low voltage domain to a high voltage domain |
KR100930407B1 (ko) * | 2008-01-18 | 2009-12-08 | 주식회사 하이닉스반도체 | 입력회로를 가지는 반도체 집적회로 |
US8427204B2 (en) * | 2010-07-02 | 2013-04-23 | Nanya Technology Corp. | Mixed-mode input buffer |
KR101388833B1 (ko) * | 2012-10-30 | 2014-04-23 | 삼성전기주식회사 | 입력 버퍼 회로 |
KR102155190B1 (ko) | 2014-05-12 | 2020-09-11 | 삼성전자주식회사 | 입력 버퍼 및 이를 포함하는 메모리 장치 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5679522A (en) * | 1979-11-30 | 1981-06-30 | Seiko Epson Corp | Cmos schmitt trigger circuit |
JPS6037820A (ja) * | 1983-08-10 | 1985-02-27 | Hitachi Micro Comput Eng Ltd | 論理lsiにおける入出力回路 |
JPH0197016A (ja) * | 1987-10-09 | 1989-04-14 | Fujitsu Ltd | 半導体集積回路装置 |
US4999519A (en) * | 1987-12-04 | 1991-03-12 | Hitachi Vlsi Engineering Corporation | Semiconductor circuit with low power consumption having emitter-coupled logic or differential amplifier |
US5414663A (en) * | 1992-07-09 | 1995-05-09 | Creative Integrated Systems, Inc. | VLSI memory with an improved sense amplifier with dummy bit lines for modeling addressable bit lines |
US5151622A (en) * | 1990-11-06 | 1992-09-29 | Vitelic Corporation | CMOS logic circuit with output coupled to multiple feedback paths and associated method |
US5223751A (en) * | 1991-10-29 | 1993-06-29 | Vlsi Technology, Inc. | Logic level shifter for 3 volt cmos to 5 volt cmos or ttl |
JPH06120807A (ja) * | 1991-12-12 | 1994-04-28 | Hitachi Ltd | 半導体集積回路装置 |
EP0587938B1 (de) * | 1992-09-18 | 1996-03-13 | Siemens Aktiengesellschaft | Integrierte Pufferschaltung |
US5440248A (en) * | 1994-01-31 | 1995-08-08 | Texas Instruments Incorporated | Power-saver differential input buffer |
JPH07245558A (ja) * | 1994-03-03 | 1995-09-19 | Hitachi Ltd | 半導体装置の入力回路 |
US5488322A (en) * | 1994-08-29 | 1996-01-30 | Kaplinsky; Cecil H. | Digital interface circuit with dual switching points for increased speed |
FR2750240B1 (fr) * | 1996-06-20 | 1998-07-31 | Sgs Thomson Microelectronics | Generateur de reference de tension |
DE19722158C1 (de) * | 1997-05-27 | 1998-11-12 | Siemens Ag | Eingangsschaltung für eine integrierte Schaltung |
JPH1127136A (ja) * | 1997-07-07 | 1999-01-29 | Hitachi Ltd | 半導体集積回路装置 |
KR100266011B1 (ko) * | 1997-10-01 | 2000-09-15 | 김영환 | 히스테리시스입력버퍼 |
US6232818B1 (en) * | 1998-05-20 | 2001-05-15 | Xilinx, Inc. | Voltage translator |
TW440767B (en) * | 1998-06-02 | 2001-06-16 | Fujitsu Ltd | Method of and apparatus for correctly transmitting signals at high speed without waveform distortion |
US6131168A (en) * | 1999-03-18 | 2000-10-10 | Agilent Technologies | System and method for reducing phase error in clocks produced by a delay locked loop |
-
1999
- 1999-09-15 DE DE19944248A patent/DE19944248C2/de not_active Expired - Fee Related
-
2000
- 2000-09-13 JP JP2000278531A patent/JP2001111407A/ja active Pending
- 2000-09-13 EP EP00119901A patent/EP1091491A1/de not_active Withdrawn
- 2000-09-14 TW TW089118797A patent/TW463462B/zh not_active IP Right Cessation
- 2000-09-15 CN CNB001331167A patent/CN1156979C/zh not_active Expired - Fee Related
- 2000-09-15 KR KR1020000054261A patent/KR100725677B1/ko not_active IP Right Cessation
- 2000-09-15 US US09/662,957 patent/US6480039B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE19944248C2 (de) | 2002-04-11 |
CN1288290A (zh) | 2001-03-21 |
KR20010050477A (ko) | 2001-06-15 |
TW463462B (en) | 2001-11-11 |
DE19944248A1 (de) | 2001-03-29 |
US6480039B1 (en) | 2002-11-12 |
EP1091491A1 (de) | 2001-04-11 |
KR100725677B1 (ko) | 2007-06-07 |
JP2001111407A (ja) | 2001-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER NAME: INFENNIAN TECHNOLOGIES AG |
|
CP01 | Change in the name or title of a patent holder |
Address after: Munich, Germany Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: INFINEON TECHNOLOGIES AG |
|
TR01 | Transfer of patent right |
Effective date of registration: 20130619 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: Munich, Germany Patentee before: Infineon Technologies AG |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160113 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040707 Termination date: 20170915 |
|
CF01 | Termination of patent right due to non-payment of annual fee |