CN115552408A - 半导体装置及电子设备 - Google Patents

半导体装置及电子设备 Download PDF

Info

Publication number
CN115552408A
CN115552408A CN202180034710.4A CN202180034710A CN115552408A CN 115552408 A CN115552408 A CN 115552408A CN 202180034710 A CN202180034710 A CN 202180034710A CN 115552408 A CN115552408 A CN 115552408A
Authority
CN
China
Prior art keywords
wiring
unit
terminal
transistor
electrically connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180034710.4A
Other languages
English (en)
Chinese (zh)
Inventor
青木健
黑川义元
上妻宗广
金村卓郎
井上达则
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN115552408A publication Critical patent/CN115552408A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/10—Arrangements for interconnecting storage elements electrically, e.g. by wiring for interconnecting capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/16—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for multiplication or division
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/48—Analogue computers for specific processes, systems or devices, e.g. simulators
    • G06G7/60—Analogue computers for specific processes, systems or devices, e.g. simulators for living beings, e.g. their nervous systems ; for problems in the medical field
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2293—Timing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/40—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/50—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the boundary region between the core and peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Biomedical Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Neurology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biophysics (AREA)
  • Molecular Biology (AREA)
  • Software Systems (AREA)
  • Evolutionary Computation (AREA)
  • Computing Systems (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • Artificial Intelligence (AREA)
  • General Engineering & Computer Science (AREA)
  • Physiology (AREA)
  • Neurosurgery (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Amplifiers (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electronic Switches (AREA)
  • Control Of El Displays (AREA)
CN202180034710.4A 2020-05-15 2021-05-06 半导体装置及电子设备 Pending CN115552408A (zh)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP2020-085737 2020-05-15
JP2020085737 2020-05-15
JP2020-129885 2020-07-31
JP2020129929 2020-07-31
JP2020-129929 2020-07-31
JP2020129885 2020-07-31
JP2020-131822 2020-08-03
JP2020131822 2020-08-03
JP2021-023247 2021-02-17
JP2021023247 2021-02-17
PCT/IB2021/053819 WO2021229373A1 (ja) 2020-05-15 2021-05-06 半導体装置、及び電子機器

Publications (1)

Publication Number Publication Date
CN115552408A true CN115552408A (zh) 2022-12-30

Family

ID=78525448

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180034710.4A Pending CN115552408A (zh) 2020-05-15 2021-05-06 半导体装置及电子设备

Country Status (6)

Country Link
US (2) US12136465B2 (https=)
JP (2) JP7578683B2 (https=)
KR (1) KR20230023620A (https=)
CN (1) CN115552408A (https=)
TW (1) TWI865775B (https=)
WO (1) WO2021229373A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI865775B (zh) * 2020-05-15 2024-12-11 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
JP7596386B2 (ja) 2020-08-03 2024-12-09 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP7723677B2 (ja) * 2020-10-20 2025-08-14 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JPWO2023161757A1 (https=) * 2022-02-25 2023-08-31
WO2023209485A1 (ja) * 2022-04-29 2023-11-02 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US20230386997A1 (en) * 2022-05-26 2023-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices with reduced effect of capacitive coupling

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0467259A (ja) 1990-07-09 1992-03-03 Hitachi Ltd 情報処理装置
WO2017068478A1 (en) * 2015-10-22 2017-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or memory device including the semiconductor device
TWI751990B (zh) * 2015-12-24 2022-01-11 美商英特爾股份有限公司 衝突罩生成
CN108701480B (zh) 2016-03-10 2022-10-14 株式会社半导体能源研究所 半导体装置
KR102382727B1 (ko) * 2016-03-18 2022-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 사용한 시스템
US9934826B2 (en) 2016-04-14 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TW201809815A (zh) * 2016-09-06 2018-03-16 Semiconductor Energy Lab 顯示面板、顯示裝置、輸入輸出裝置、資料處理裝置
WO2018069785A1 (en) * 2016-10-12 2018-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and system using the same
WO2018073708A1 (en) * 2016-10-20 2018-04-26 Semiconductor Energy Laboratory Co., Ltd. Storage device, driving method thereof, semiconductor device, electronic component, and electronic device
US11037614B2 (en) * 2017-07-28 2021-06-15 Intel Corporation Imprint-free write driver for ferroelectric memory
US11139298B2 (en) * 2017-09-06 2021-10-05 Semiconductor Energy Laboratory Co., Ltd. Electronic device
CN119947090A (zh) * 2017-11-24 2025-05-06 株式会社半导体能源研究所 半导体装置及动态逻辑电路
EP3506265A1 (en) * 2017-12-29 2019-07-03 IMEC vzw A memory device
US12118333B2 (en) 2018-04-26 2024-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2020155186A (ja) * 2019-03-22 2020-09-24 キオクシア株式会社 メモリデバイス
WO2020254909A1 (ja) * 2019-06-21 2020-12-24 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
WO2021009607A1 (ja) * 2019-07-12 2021-01-21 株式会社半導体エネルギー研究所 記憶装置、半導体装置、及び電子機器
US10916288B1 (en) * 2019-07-18 2021-02-09 Micron Technology, Inc. Sensing techniques for a memory cell
US12585431B2 (en) * 2019-12-27 2026-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
TWI865775B (zh) * 2020-05-15 2024-12-11 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
US11387254B2 (en) * 2020-10-30 2022-07-12 Ferroelectric Memory Gmbh Memory cell and methods thereof
US11594176B2 (en) * 2021-03-11 2023-02-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display apparatus, electronic device, and operation method of semiconductor device
US12100101B2 (en) * 2021-08-24 2024-09-24 International Business Machines Corporation Generating 2D mapping using 3D data
CN118450710A (zh) * 2023-02-03 2024-08-06 株式会社半导体能源研究所 存储装置及电子设备
WO2026033399A1 (ja) * 2024-08-09 2026-02-12 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
US20250054523A1 (en) 2025-02-13
TWI865775B (zh) 2024-12-11
JP2025010202A (ja) 2025-01-20
US12136465B2 (en) 2024-11-05
KR20230023620A (ko) 2023-02-17
JP7578683B2 (ja) 2024-11-06
JPWO2021229373A1 (https=) 2021-11-18
WO2021229373A1 (ja) 2021-11-18
US20230326491A1 (en) 2023-10-12
TW202145080A (zh) 2021-12-01

Similar Documents

Publication Publication Date Title
JP7602596B2 (ja) 半導体装置及び電子機器
JP7578683B2 (ja) 半導体装置、及び電子機器
JP7689533B2 (ja) 半導体装置
JP7561767B2 (ja) 半導体装置、及び電子機器
JP2024055903A (ja) 半導体装置
JP7595057B2 (ja) 半導体装置、及び電子機器
JP7571127B2 (ja) 半導体装置、及び電子機器
KR20210125004A (ko) 반도체 장치 및 전자 기기
CN115769221A (zh) 半导体装置及电子设备
JP7480133B2 (ja) 半導体装置、及び電子機器
JP7769057B2 (ja) 半導体装置
JP7596386B2 (ja) 半導体装置、及び電子機器
CN115836293A (zh) 半导体装置及电子设备
JP2021043712A (ja) 半導体装置、及び電子機器

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination