JPWO2021229373A1 - - Google Patents
Info
- Publication number
- JPWO2021229373A1 JPWO2021229373A1 JP2022522079A JP2022522079A JPWO2021229373A1 JP WO2021229373 A1 JPWO2021229373 A1 JP WO2021229373A1 JP 2022522079 A JP2022522079 A JP 2022522079A JP 2022522079 A JP2022522079 A JP 2022522079A JP WO2021229373 A1 JPWO2021229373 A1 JP WO2021229373A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/10—Arrangements for interconnecting storage elements electrically, e.g. by wiring for interconnecting capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
- G06G7/16—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for multiplication or division
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/48—Analogue computers for specific processes, systems or devices, e.g. simulators
- G06G7/60—Analogue computers for specific processes, systems or devices, e.g. simulators for living beings, e.g. their nervous systems ; for problems in the medical field
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2293—Timing circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/40—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/50—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the boundary region between the core and peripheral circuit regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Power Engineering (AREA)
- Biomedical Technology (AREA)
- Health & Medical Sciences (AREA)
- Mathematical Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Neurology (AREA)
- General Health & Medical Sciences (AREA)
- Biophysics (AREA)
- Molecular Biology (AREA)
- Software Systems (AREA)
- Evolutionary Computation (AREA)
- Computing Systems (AREA)
- Computational Linguistics (AREA)
- Data Mining & Analysis (AREA)
- Artificial Intelligence (AREA)
- General Engineering & Computer Science (AREA)
- Physiology (AREA)
- Neurosurgery (AREA)
- Dram (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Amplifiers (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electronic Switches (AREA)
- Control Of El Displays (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024187737A JP2025010202A (ja) | 2020-05-15 | 2024-10-24 | 半導体装置 |
Applications Claiming Priority (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020085737 | 2020-05-15 | ||
| JP2020085737 | 2020-05-15 | ||
| JP2020129929 | 2020-07-31 | ||
| JP2020129885 | 2020-07-31 | ||
| JP2020129929 | 2020-07-31 | ||
| JP2020129885 | 2020-07-31 | ||
| JP2020131822 | 2020-08-03 | ||
| JP2020131822 | 2020-08-03 | ||
| JP2021023247 | 2021-02-17 | ||
| JP2021023247 | 2021-02-17 | ||
| PCT/IB2021/053819 WO2021229373A1 (ja) | 2020-05-15 | 2021-05-06 | 半導体装置、及び電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024187737A Division JP2025010202A (ja) | 2020-05-15 | 2024-10-24 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021229373A1 true JPWO2021229373A1 (https=) | 2021-11-18 |
| JP7578683B2 JP7578683B2 (ja) | 2024-11-06 |
Family
ID=78525448
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022522079A Active JP7578683B2 (ja) | 2020-05-15 | 2021-05-06 | 半導体装置、及び電子機器 |
| JP2024187737A Withdrawn JP2025010202A (ja) | 2020-05-15 | 2024-10-24 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024187737A Withdrawn JP2025010202A (ja) | 2020-05-15 | 2024-10-24 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US12136465B2 (https=) |
| JP (2) | JP7578683B2 (https=) |
| KR (1) | KR20230023620A (https=) |
| CN (1) | CN115552408A (https=) |
| TW (1) | TWI865775B (https=) |
| WO (1) | WO2021229373A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI865775B (zh) * | 2020-05-15 | 2024-12-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
| JP7596386B2 (ja) | 2020-08-03 | 2024-12-09 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| JP7723677B2 (ja) * | 2020-10-20 | 2025-08-14 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| JPWO2023161757A1 (https=) * | 2022-02-25 | 2023-08-31 | ||
| WO2023209485A1 (ja) * | 2022-04-29 | 2023-11-02 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| US20230386997A1 (en) * | 2022-05-26 | 2023-11-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices with reduced effect of capacitive coupling |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017194963A (ja) * | 2016-04-14 | 2017-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2019207404A1 (ja) * | 2018-04-26 | 2019-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0467259A (ja) | 1990-07-09 | 1992-03-03 | Hitachi Ltd | 情報処理装置 |
| WO2017068478A1 (en) * | 2015-10-22 | 2017-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or memory device including the semiconductor device |
| TWI751990B (zh) * | 2015-12-24 | 2022-01-11 | 美商英特爾股份有限公司 | 衝突罩生成 |
| CN108701480B (zh) | 2016-03-10 | 2022-10-14 | 株式会社半导体能源研究所 | 半导体装置 |
| KR102382727B1 (ko) * | 2016-03-18 | 2022-04-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 사용한 시스템 |
| TW201809815A (zh) * | 2016-09-06 | 2018-03-16 | Semiconductor Energy Lab | 顯示面板、顯示裝置、輸入輸出裝置、資料處理裝置 |
| WO2018069785A1 (en) * | 2016-10-12 | 2018-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and system using the same |
| WO2018073708A1 (en) * | 2016-10-20 | 2018-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Storage device, driving method thereof, semiconductor device, electronic component, and electronic device |
| US11037614B2 (en) * | 2017-07-28 | 2021-06-15 | Intel Corporation | Imprint-free write driver for ferroelectric memory |
| US11139298B2 (en) * | 2017-09-06 | 2021-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| CN119947090A (zh) * | 2017-11-24 | 2025-05-06 | 株式会社半导体能源研究所 | 半导体装置及动态逻辑电路 |
| EP3506265A1 (en) * | 2017-12-29 | 2019-07-03 | IMEC vzw | A memory device |
| JP2020155186A (ja) * | 2019-03-22 | 2020-09-24 | キオクシア株式会社 | メモリデバイス |
| WO2020254909A1 (ja) * | 2019-06-21 | 2020-12-24 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| WO2021009607A1 (ja) * | 2019-07-12 | 2021-01-21 | 株式会社半導体エネルギー研究所 | 記憶装置、半導体装置、及び電子機器 |
| US10916288B1 (en) * | 2019-07-18 | 2021-02-09 | Micron Technology, Inc. | Sensing techniques for a memory cell |
| US12585431B2 (en) * | 2019-12-27 | 2026-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| TWI865775B (zh) * | 2020-05-15 | 2024-12-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
| US11387254B2 (en) * | 2020-10-30 | 2022-07-12 | Ferroelectric Memory Gmbh | Memory cell and methods thereof |
| US11594176B2 (en) * | 2021-03-11 | 2023-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display apparatus, electronic device, and operation method of semiconductor device |
| US12100101B2 (en) * | 2021-08-24 | 2024-09-24 | International Business Machines Corporation | Generating 2D mapping using 3D data |
| CN118450710A (zh) * | 2023-02-03 | 2024-08-06 | 株式会社半导体能源研究所 | 存储装置及电子设备 |
| WO2026033399A1 (ja) * | 2024-08-09 | 2026-02-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2021
- 2021-05-04 TW TW110116070A patent/TWI865775B/zh active
- 2021-05-06 WO PCT/IB2021/053819 patent/WO2021229373A1/ja not_active Ceased
- 2021-05-06 US US17/922,659 patent/US12136465B2/en active Active
- 2021-05-06 JP JP2022522079A patent/JP7578683B2/ja active Active
- 2021-05-06 CN CN202180034710.4A patent/CN115552408A/zh active Pending
- 2021-05-06 KR KR1020227039827A patent/KR20230023620A/ko active Pending
-
2024
- 2024-10-24 JP JP2024187737A patent/JP2025010202A/ja not_active Withdrawn
- 2024-10-31 US US18/932,891 patent/US20250054523A1/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017194963A (ja) * | 2016-04-14 | 2017-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2019207404A1 (ja) * | 2018-04-26 | 2019-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20250054523A1 (en) | 2025-02-13 |
| TWI865775B (zh) | 2024-12-11 |
| JP2025010202A (ja) | 2025-01-20 |
| US12136465B2 (en) | 2024-11-05 |
| KR20230023620A (ko) | 2023-02-17 |
| JP7578683B2 (ja) | 2024-11-06 |
| WO2021229373A1 (ja) | 2021-11-18 |
| CN115552408A (zh) | 2022-12-30 |
| US20230326491A1 (en) | 2023-10-12 |
| TW202145080A (zh) | 2021-12-01 |
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