TWI865775B - 半導體裝置及電子裝置 - Google Patents

半導體裝置及電子裝置 Download PDF

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Publication number
TWI865775B
TWI865775B TW110116070A TW110116070A TWI865775B TW I865775 B TWI865775 B TW I865775B TW 110116070 A TW110116070 A TW 110116070A TW 110116070 A TW110116070 A TW 110116070A TW I865775 B TWI865775 B TW I865775B
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Taiwan
Prior art keywords
wiring
terminal
transistor
unit
electrically connected
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TW110116070A
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English (en)
Chinese (zh)
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TW202145080A (zh
Inventor
青木健
黒川義元
上妻宗廣
金村卓郎
井上達則
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日商半導體能源研究所股份有限公司
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/10—Arrangements for interconnecting storage elements electrically, e.g. by wiring for interconnecting capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/16—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for multiplication or division
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/48—Analogue computers for specific processes, systems or devices, e.g. simulators
    • G06G7/60—Analogue computers for specific processes, systems or devices, e.g. simulators for living beings, e.g. their nervous systems ; for problems in the medical field
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2293—Timing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/40—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/50—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the boundary region between the core and peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Biomedical Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Neurology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biophysics (AREA)
  • Molecular Biology (AREA)
  • Software Systems (AREA)
  • Evolutionary Computation (AREA)
  • Computing Systems (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • Artificial Intelligence (AREA)
  • General Engineering & Computer Science (AREA)
  • Physiology (AREA)
  • Neurosurgery (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Amplifiers (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electronic Switches (AREA)
  • Control Of El Displays (AREA)
TW110116070A 2020-05-15 2021-05-04 半導體裝置及電子裝置 TWI865775B (zh)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2020-085737 2020-05-15
JP2020085737 2020-05-15
JP2020-129885 2020-07-31
JP2020129929 2020-07-31
JP2020-129929 2020-07-31
JP2020129885 2020-07-31
JP2020-131822 2020-08-03
JP2020131822 2020-08-03
JP2021-023247 2021-02-17
JP2021023247 2021-02-17

Publications (2)

Publication Number Publication Date
TW202145080A TW202145080A (zh) 2021-12-01
TWI865775B true TWI865775B (zh) 2024-12-11

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TW110116070A TWI865775B (zh) 2020-05-15 2021-05-04 半導體裝置及電子裝置

Country Status (6)

Country Link
US (2) US12136465B2 (https=)
JP (2) JP7578683B2 (https=)
KR (1) KR20230023620A (https=)
CN (1) CN115552408A (https=)
TW (1) TWI865775B (https=)
WO (1) WO2021229373A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI865775B (zh) * 2020-05-15 2024-12-11 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
JP7596386B2 (ja) 2020-08-03 2024-12-09 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP7723677B2 (ja) * 2020-10-20 2025-08-14 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JPWO2023161757A1 (https=) * 2022-02-25 2023-08-31
WO2023209485A1 (ja) * 2022-04-29 2023-11-02 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US20230386997A1 (en) * 2022-05-26 2023-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices with reduced effect of capacitive coupling

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TW201809815A (zh) * 2016-09-06 2018-03-16 Semiconductor Energy Lab 顯示面板、顯示裝置、輸入輸出裝置、資料處理裝置
TW201818234A (zh) * 2016-10-12 2018-05-16 日商半導體能源研究所股份有限公司 半導體裝置及使用該半導體裝置的系統

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KR102382727B1 (ko) * 2016-03-18 2022-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 사용한 시스템
US9934826B2 (en) 2016-04-14 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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US11037614B2 (en) * 2017-07-28 2021-06-15 Intel Corporation Imprint-free write driver for ferroelectric memory
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TW201732609A (zh) * 2015-12-24 2017-09-16 英特爾股份有限公司 衝突罩生成
TW201809815A (zh) * 2016-09-06 2018-03-16 Semiconductor Energy Lab 顯示面板、顯示裝置、輸入輸出裝置、資料處理裝置
TW201818234A (zh) * 2016-10-12 2018-05-16 日商半導體能源研究所股份有限公司 半導體裝置及使用該半導體裝置的系統

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Publication number Publication date
US20250054523A1 (en) 2025-02-13
JP2025010202A (ja) 2025-01-20
US12136465B2 (en) 2024-11-05
KR20230023620A (ko) 2023-02-17
JP7578683B2 (ja) 2024-11-06
JPWO2021229373A1 (https=) 2021-11-18
WO2021229373A1 (ja) 2021-11-18
CN115552408A (zh) 2022-12-30
US20230326491A1 (en) 2023-10-12
TW202145080A (zh) 2021-12-01

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