CN115483098B - 蚀刻方法和蚀刻装置 - Google Patents

蚀刻方法和蚀刻装置

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Publication number
CN115483098B
CN115483098B CN202210647736.2A CN202210647736A CN115483098B CN 115483098 B CN115483098 B CN 115483098B CN 202210647736 A CN202210647736 A CN 202210647736A CN 115483098 B CN115483098 B CN 115483098B
Authority
CN
China
Prior art keywords
etching
side wall
fluorine
gas
containing gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210647736.2A
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English (en)
Chinese (zh)
Other versions
CN115483098A (zh
Inventor
高桥信博
中込健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN115483098A publication Critical patent/CN115483098A/zh
Application granted granted Critical
Publication of CN115483098B publication Critical patent/CN115483098B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
CN202210647736.2A 2021-06-15 2022-06-08 蚀刻方法和蚀刻装置 Active CN115483098B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021099662A JP7803047B2 (ja) 2021-06-15 2021-06-15 エッチング方法及びエッチング装置
JP2021-099662 2021-06-15

Publications (2)

Publication Number Publication Date
CN115483098A CN115483098A (zh) 2022-12-16
CN115483098B true CN115483098B (zh) 2025-10-21

Family

ID=84390465

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210647736.2A Active CN115483098B (zh) 2021-06-15 2022-06-08 蚀刻方法和蚀刻装置

Country Status (4)

Country Link
US (1) US12211695B2 (https=)
JP (1) JP7803047B2 (https=)
KR (1) KR102871703B1 (https=)
CN (1) CN115483098B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024123013A1 (ko) 2022-12-05 2024-06-13 주식회사 엘지에너지솔루션 배터리 팩
JP2024143369A (ja) * 2023-03-30 2024-10-11 東京エレクトロン株式会社 エッチング方法及びエッチング装置
WO2026004574A1 (ja) * 2024-06-24 2026-01-02 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法及びエッチング装置
WO2026054107A1 (ja) * 2024-09-09 2026-03-12 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110476225A (zh) * 2017-03-29 2019-11-19 东京毅力科创株式会社 基板处理方法和存储介质
CN110942985A (zh) * 2018-09-25 2020-03-31 东京毅力科创株式会社 蚀刻方法、蚀刻装置及存储介质

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6987042B2 (en) * 2003-05-30 2006-01-17 International Business Machines Corporation Method of forming a collar using selective SiGe/Amorphous Si Etch
JP4738194B2 (ja) * 2006-02-09 2011-08-03 芝浦メカトロニクス株式会社 エッチング方法及び半導体装置の製造方法
JP2007214299A (ja) 2006-02-09 2007-08-23 Tokyo Electron Ltd エッチング方法
US8263474B2 (en) * 2007-01-11 2012-09-11 Tokyo Electron Limited Reduced defect silicon or silicon germanium deposition in micro-features
JP5421318B2 (ja) 2011-03-28 2014-02-19 富士フイルム株式会社 インクジェットヘッド洗浄システムおよびインクジェットヘッドのメンテナンス方法
JP5851349B2 (ja) 2012-06-04 2016-02-03 株式会社日立ハイテクノロジーズ プラズマエッチング方法及びプラズマエッチング装置
CN104299899B (zh) * 2013-07-18 2017-08-25 中微半导体设备(上海)有限公司 间隔层双曝光刻蚀方法
US20150371889A1 (en) * 2014-06-20 2015-12-24 Applied Materials, Inc. Methods for shallow trench isolation formation in a silicon germanium layer
JP6393574B2 (ja) * 2014-10-09 2018-09-19 東京エレクトロン株式会社 エッチング方法
KR102323389B1 (ko) * 2016-03-02 2021-11-05 도쿄엘렉트론가부시키가이샤 튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭
US10923356B2 (en) * 2018-07-20 2021-02-16 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of silicon-germanium alloys
JP7345334B2 (ja) * 2019-09-18 2023-09-15 東京エレクトロン株式会社 エッチング方法及び基板処理システム
US11424120B2 (en) * 2021-01-22 2022-08-23 Tokyo Electron Limited Plasma etching techniques

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110476225A (zh) * 2017-03-29 2019-11-19 东京毅力科创株式会社 基板处理方法和存储介质
CN110942985A (zh) * 2018-09-25 2020-03-31 东京毅力科创株式会社 蚀刻方法、蚀刻装置及存储介质

Also Published As

Publication number Publication date
CN115483098A (zh) 2022-12-16
KR20220168164A (ko) 2022-12-22
TW202305913A (zh) 2023-02-01
US20220399204A1 (en) 2022-12-15
JP7803047B2 (ja) 2026-01-21
JP2022191045A (ja) 2022-12-27
KR102871703B1 (ko) 2025-10-17
US12211695B2 (en) 2025-01-28

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