KR102871703B1 - 에칭 방법 및 에칭 장치 - Google Patents

에칭 방법 및 에칭 장치

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Publication number
KR102871703B1
KR102871703B1 KR1020220070531A KR20220070531A KR102871703B1 KR 102871703 B1 KR102871703 B1 KR 102871703B1 KR 1020220070531 A KR1020220070531 A KR 1020220070531A KR 20220070531 A KR20220070531 A KR 20220070531A KR 102871703 B1 KR102871703 B1 KR 102871703B1
Authority
KR
South Korea
Prior art keywords
etching
side wall
fluorine
gas
containing gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020220070531A
Other languages
English (en)
Korean (ko)
Other versions
KR20220168164A (ko
Inventor
노부히로 다카하시
겐 나카고미
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20220168164A publication Critical patent/KR20220168164A/ko
Application granted granted Critical
Publication of KR102871703B1 publication Critical patent/KR102871703B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
KR1020220070531A 2021-06-15 2022-06-10 에칭 방법 및 에칭 장치 Active KR102871703B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2021-099662 2021-06-15
JP2021099662A JP7803047B2 (ja) 2021-06-15 2021-06-15 エッチング方法及びエッチング装置

Publications (2)

Publication Number Publication Date
KR20220168164A KR20220168164A (ko) 2022-12-22
KR102871703B1 true KR102871703B1 (ko) 2025-10-17

Family

ID=84390465

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020220070531A Active KR102871703B1 (ko) 2021-06-15 2022-06-10 에칭 방법 및 에칭 장치

Country Status (4)

Country Link
US (1) US12211695B2 (https=)
JP (1) JP7803047B2 (https=)
KR (1) KR102871703B1 (https=)
CN (1) CN115483098B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024123013A1 (ko) 2022-12-05 2024-06-13 주식회사 엘지에너지솔루션 배터리 팩
JP2024143369A (ja) * 2023-03-30 2024-10-11 東京エレクトロン株式会社 エッチング方法及びエッチング装置
WO2026004574A1 (ja) * 2024-06-24 2026-01-02 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法及びエッチング装置
WO2026054107A1 (ja) * 2024-09-09 2026-03-12 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018170380A (ja) 2017-03-29 2018-11-01 東京エレクトロン株式会社 基板処理方法及び記憶媒体。

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US6987042B2 (en) * 2003-05-30 2006-01-17 International Business Machines Corporation Method of forming a collar using selective SiGe/Amorphous Si Etch
JP4738194B2 (ja) * 2006-02-09 2011-08-03 芝浦メカトロニクス株式会社 エッチング方法及び半導体装置の製造方法
JP2007214299A (ja) 2006-02-09 2007-08-23 Tokyo Electron Ltd エッチング方法
US8263474B2 (en) * 2007-01-11 2012-09-11 Tokyo Electron Limited Reduced defect silicon or silicon germanium deposition in micro-features
JP5421318B2 (ja) 2011-03-28 2014-02-19 富士フイルム株式会社 インクジェットヘッド洗浄システムおよびインクジェットヘッドのメンテナンス方法
JP5851349B2 (ja) 2012-06-04 2016-02-03 株式会社日立ハイテクノロジーズ プラズマエッチング方法及びプラズマエッチング装置
CN104299899B (zh) * 2013-07-18 2017-08-25 中微半导体设备(上海)有限公司 间隔层双曝光刻蚀方法
US20150371889A1 (en) * 2014-06-20 2015-12-24 Applied Materials, Inc. Methods for shallow trench isolation formation in a silicon germanium layer
JP6393574B2 (ja) * 2014-10-09 2018-09-19 東京エレクトロン株式会社 エッチング方法
KR102323389B1 (ko) * 2016-03-02 2021-11-05 도쿄엘렉트론가부시키가이샤 튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭
US10923356B2 (en) * 2018-07-20 2021-02-16 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of silicon-germanium alloys
JP7113711B2 (ja) 2018-09-25 2022-08-05 東京エレクトロン株式会社 エッチング方法、エッチング装置、および記憶媒体
JP7345334B2 (ja) * 2019-09-18 2023-09-15 東京エレクトロン株式会社 エッチング方法及び基板処理システム
US11424120B2 (en) * 2021-01-22 2022-08-23 Tokyo Electron Limited Plasma etching techniques

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018170380A (ja) 2017-03-29 2018-11-01 東京エレクトロン株式会社 基板処理方法及び記憶媒体。

Also Published As

Publication number Publication date
CN115483098A (zh) 2022-12-16
KR20220168164A (ko) 2022-12-22
TW202305913A (zh) 2023-02-01
US20220399204A1 (en) 2022-12-15
JP7803047B2 (ja) 2026-01-21
JP2022191045A (ja) 2022-12-27
CN115483098B (zh) 2025-10-21
US12211695B2 (en) 2025-01-28

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