JP7803047B2 - エッチング方法及びエッチング装置 - Google Patents

エッチング方法及びエッチング装置

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Publication number
JP7803047B2
JP7803047B2 JP2021099662A JP2021099662A JP7803047B2 JP 7803047 B2 JP7803047 B2 JP 7803047B2 JP 2021099662 A JP2021099662 A JP 2021099662A JP 2021099662 A JP2021099662 A JP 2021099662A JP 7803047 B2 JP7803047 B2 JP 7803047B2
Authority
JP
Japan
Prior art keywords
etching
sidewall
gas
fluorine
containing gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021099662A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022191045A5 (https=
JP2022191045A (ja
Inventor
信博 高橋
健 中込
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2021099662A priority Critical patent/JP7803047B2/ja
Priority to TW111120805A priority patent/TWI917645B/zh
Priority to CN202210647736.2A priority patent/CN115483098B/zh
Priority to KR1020220070531A priority patent/KR102871703B1/ko
Priority to US17/839,869 priority patent/US12211695B2/en
Publication of JP2022191045A publication Critical patent/JP2022191045A/ja
Publication of JP2022191045A5 publication Critical patent/JP2022191045A5/ja
Application granted granted Critical
Publication of JP7803047B2 publication Critical patent/JP7803047B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
JP2021099662A 2021-06-15 2021-06-15 エッチング方法及びエッチング装置 Active JP7803047B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021099662A JP7803047B2 (ja) 2021-06-15 2021-06-15 エッチング方法及びエッチング装置
TW111120805A TWI917645B (zh) 2021-06-15 2022-06-06 蝕刻方法及蝕刻裝置
CN202210647736.2A CN115483098B (zh) 2021-06-15 2022-06-08 蚀刻方法和蚀刻装置
KR1020220070531A KR102871703B1 (ko) 2021-06-15 2022-06-10 에칭 방법 및 에칭 장치
US17/839,869 US12211695B2 (en) 2021-06-15 2022-06-14 Etching method and etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021099662A JP7803047B2 (ja) 2021-06-15 2021-06-15 エッチング方法及びエッチング装置

Publications (3)

Publication Number Publication Date
JP2022191045A JP2022191045A (ja) 2022-12-27
JP2022191045A5 JP2022191045A5 (https=) 2024-04-09
JP7803047B2 true JP7803047B2 (ja) 2026-01-21

Family

ID=84390465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021099662A Active JP7803047B2 (ja) 2021-06-15 2021-06-15 エッチング方法及びエッチング装置

Country Status (4)

Country Link
US (1) US12211695B2 (https=)
JP (1) JP7803047B2 (https=)
KR (1) KR102871703B1 (https=)
CN (1) CN115483098B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024123013A1 (ko) 2022-12-05 2024-06-13 주식회사 엘지에너지솔루션 배터리 팩
JP2024143369A (ja) * 2023-03-30 2024-10-11 東京エレクトロン株式会社 エッチング方法及びエッチング装置
WO2026004574A1 (ja) * 2024-06-24 2026-01-02 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法及びエッチング装置
WO2026054107A1 (ja) * 2024-09-09 2026-03-12 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007214299A (ja) 2006-02-09 2007-08-23 Tokyo Electron Ltd エッチング方法
JP2013251471A (ja) 2012-06-04 2013-12-12 Hitachi High-Technologies Corp プラズマエッチング方法及びプラズマエッチング装置
JP2018170380A (ja) 2017-03-29 2018-11-01 東京エレクトロン株式会社 基板処理方法及び記憶媒体。

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6987042B2 (en) * 2003-05-30 2006-01-17 International Business Machines Corporation Method of forming a collar using selective SiGe/Amorphous Si Etch
JP4738194B2 (ja) * 2006-02-09 2011-08-03 芝浦メカトロニクス株式会社 エッチング方法及び半導体装置の製造方法
US8263474B2 (en) * 2007-01-11 2012-09-11 Tokyo Electron Limited Reduced defect silicon or silicon germanium deposition in micro-features
JP5421318B2 (ja) 2011-03-28 2014-02-19 富士フイルム株式会社 インクジェットヘッド洗浄システムおよびインクジェットヘッドのメンテナンス方法
CN104299899B (zh) * 2013-07-18 2017-08-25 中微半导体设备(上海)有限公司 间隔层双曝光刻蚀方法
US20150371889A1 (en) * 2014-06-20 2015-12-24 Applied Materials, Inc. Methods for shallow trench isolation formation in a silicon germanium layer
JP6393574B2 (ja) * 2014-10-09 2018-09-19 東京エレクトロン株式会社 エッチング方法
KR102323389B1 (ko) * 2016-03-02 2021-11-05 도쿄엘렉트론가부시키가이샤 튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭
US10923356B2 (en) * 2018-07-20 2021-02-16 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of silicon-germanium alloys
JP7113711B2 (ja) 2018-09-25 2022-08-05 東京エレクトロン株式会社 エッチング方法、エッチング装置、および記憶媒体
JP7345334B2 (ja) * 2019-09-18 2023-09-15 東京エレクトロン株式会社 エッチング方法及び基板処理システム
US11424120B2 (en) * 2021-01-22 2022-08-23 Tokyo Electron Limited Plasma etching techniques

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007214299A (ja) 2006-02-09 2007-08-23 Tokyo Electron Ltd エッチング方法
JP2013251471A (ja) 2012-06-04 2013-12-12 Hitachi High-Technologies Corp プラズマエッチング方法及びプラズマエッチング装置
JP2018170380A (ja) 2017-03-29 2018-11-01 東京エレクトロン株式会社 基板処理方法及び記憶媒体。

Also Published As

Publication number Publication date
CN115483098A (zh) 2022-12-16
KR20220168164A (ko) 2022-12-22
TW202305913A (zh) 2023-02-01
US20220399204A1 (en) 2022-12-15
JP2022191045A (ja) 2022-12-27
KR102871703B1 (ko) 2025-10-17
CN115483098B (zh) 2025-10-21
US12211695B2 (en) 2025-01-28

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