CN115287612A - 一种HiPIMS双靶共溅射制备WS2-Ti复合涂层的装置和方法 - Google Patents
一种HiPIMS双靶共溅射制备WS2-Ti复合涂层的装置和方法 Download PDFInfo
- Publication number
- CN115287612A CN115287612A CN202210706659.3A CN202210706659A CN115287612A CN 115287612 A CN115287612 A CN 115287612A CN 202210706659 A CN202210706659 A CN 202210706659A CN 115287612 A CN115287612 A CN 115287612A
- Authority
- CN
- China
- Prior art keywords
- power supply
- pulse power
- target
- target material
- composite coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 63
- 239000011248 coating agent Substances 0.000 title claims abstract description 54
- 239000002131 composite material Substances 0.000 title claims abstract description 42
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims description 12
- 239000013077 target material Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 claims 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000001050 lubricating effect Effects 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010687 lubricating oil Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- -1 transition metal sulfides Chemical class 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本发明公开了一种HiPIMS双靶共溅射制备WS2‑Ti复合涂层的装置和方法,该装置包括真空腔体、样品转架、主脉冲电源、从脉冲电源、WS2靶材、Ti靶材和时序控制器,样品转架设置于真空腔体内,WS2靶材和Ti靶材分别固定于真空腔体,WS2靶材和Ti靶材呈八字分布,WS2靶材和Ti靶材分别正对样品转架;主脉冲电源与Ti靶材电连接,从脉冲电源与WS2靶材电连接,时序控制器分别与主脉冲电源和从脉冲电源电连接,时序控制器控制主脉冲电源和从脉冲电源的脉冲时序。该装置可控制两套HiPIMS脉冲电源的脉冲时序,可以有效避免脉冲放电重叠,实现双靶稳定工作,利用该装置制备WS2‑Ti复合涂层,可以改善其耐摩擦磨损性能。
Description
技术领域
本发明涉及金属材料表面改性用固体润滑涂层技术领域,具体涉及一种HiPIMS双靶共溅射制备WS2-Ti复合涂层的装置和方法。
背景技术
作为具有层状结构的过度金属硫化物,WS2具有优异的热稳定性和抗氧化性,工作温度范围广,是一种具有广泛应用前景的固体润滑材料。尤其是在一些特殊的应用情况下,比如压强大、负荷大或者有辐射和腐蚀的环境情况下,它的性能表现尤为突出,非常适合作为新型润滑材料。但磁控溅射制备的纯WS2涂层质地柔软,在摩擦过程中容易失去润滑性能。针对该缺陷,研究人员通过掺入TiO2、ZnO等氧化物以及Ti、Cr、Ni、A、Zr、Cu、Ni-Co等元素来改善WS2涂层的结构形貌及性能。研究表明,通过掺杂后,复合涂层结构更加致密,表面更加光洁,与基体结合力更强,复合涂层的硬度、抗摩擦磨损性能、抗氧化性能及耐湿度性能也得到提高。但WS2-Ti复合涂层的综合性能尚不能满足大气潮湿环境中的工程应用,其抗氧化性能有待进一步改善,耐磨性能有待进一步提高。
高能脉冲磁控溅射技术(HiPIMS)是一种可以产生高离化率的磁控溅射技术,兼顾了磁控溅射及多弧离子镀的优点。其高离化率的特点可以实现高能沉积,可制备出致密度较高的优质薄膜,常用于高性能复合膜及涂层的开发及生产。特别是在刀具硬质涂层、固体润滑涂层等领域,由于该方法所制备的涂层致密、表面光滑,备受关注。研究表明,采用HiPIMS技术可以提高过度金属硫化物固体润滑涂层的致密度及高温抗氧化性能。因此,利用该技术,结合掺杂形成WS2-Ti复合涂层将会进一步提高涂层综合性能,以满足大气环境下的工程应用需求。采用双靶共溅射是实现WS2涂层掺杂的常用手段,利用该方法,通过掺杂金属及氧化物可提高WS2涂层的致密度及硬度,改善其抗摩擦磨损性能。此外,通过双靶共溅射,还可实现对涂层成分及性能的调控。但是不同于其他磁控溅射技术,利用HiPIMS镀膜时的瞬间能量很高。因此,在利用HiPIMS双靶共溅射时,当出现双靶脉冲放电重叠时,由于瞬间能量过高会导致偏压电源超载,影响起辉稳定性,甚至导致不能正常起辉,限制了该技术在WS2涂层掺杂研究中的应用。此外,受限于靶材制作技术,采用多元靶材及镶嵌靶材对WS2进行掺杂形成WS2复合涂层,在涂层的均匀性、稳定性调控上均存在局限性,不利于该复合涂层的产业化应用研究。
发明内容
为了解决上述现有技术存在的问题,本发明提供了一种HiPIMS双靶共溅射制备WS2-Ti复合涂层的装置和方法,该装置可控制两套HiPIMS脉冲电源的脉冲时序,可以有效避免脉冲放电重叠,实现双靶稳定工作,利用该装置制备WS2-Ti复合涂层,可以改善其耐摩擦磨损性能。
实现本发明上述目的所采用的技术方案为:
一种HiPIMS双靶共溅射制备WS2-Ti复合涂层的装置,包括真空腔体和样品转架,样品转架设置于真空腔体内,还包括主脉冲电源、从脉冲电源、WS2靶材、Ti靶材和时序控制器,WS2靶材和Ti靶材分别固定于真空腔体中,WS2靶材和Ti靶材呈八字分布,WS2靶材和Ti靶材分别正对样品转架;
主脉冲电源与Ti靶材电连接,从脉冲电源与WS2靶材电连接,时序控制器分别与主脉冲电源和从脉冲电源电连接,时序控制器控制主脉冲电源和从脉冲电源的脉冲时序。
所述的时序控制器包括衰减器、D触发器和延时器,主脉冲电源与衰减器连接,衰减器与D触发器的触发端连接,D触发器的复位端接高电平,D触发器的输出端与延时器连接,延时器与从脉冲电源连接。
一种HiPIMS双靶共溅射制备WS2-Ti复合涂层的方法,包括如下步骤:
1、将基体进行清洗后放置于真空腔体内的样品转架上,接着抽真空;
2、在室温下,通入工作气体至设定工作压强,打开偏压电源,设置偏压为设定电压,利用辉光等离子体对基体进行清洗;
3、设置偏压为设定电压,打开主脉冲电源,预先沉积100-200nm厚度的Ti膜作为打底层;
4、打开从脉冲电源,根据设置的双靶脉冲时序进行双靶共溅射,沉积WS2-Ti复合涂层。
与现有技术相比,本发明的有益效果和优点在于:
1、本发明提供了一种控制HiPIMS主脉冲电源和从脉冲电源的脉冲时序的控制器,可以有效避免脉冲放电重叠,避免了瞬间能量过高会导致偏压电源超载而导致不能正常起辉的问题,实现了双靶稳定工作,同时可以通过改变各靶功率实现成分调控。
2、本发明可以实现WS2-Ti复合涂层的制备,而且制备的WS2-Ti复合涂层耐磨性能更优异。
附图说明
图1为本发明的HiPIMS双靶共溅射制备WS2-Ti复合涂层的装置的结构简图。
图2为时序控制器的结构示意图。
图3为实施例2制备的WS2-Ti复合涂层的SEM形貌图。
图4为实施例2制备的WS2-Ti复合涂层的摩擦系数测试结果图。
图5为实施例2制备的WS2-Ti复合涂层的磨损量测试结果图:图中,1为对比例1制备的WS2涂层,2为实施例2制备的WS2-Ti复合涂层。
其中,1-真空腔体;2-Ti靶材;3-主脉冲电源;4-WS2靶材;5-从脉冲电源;6-样品转架;7-时序控制器:701-衰减器、702-D触发器;703-延时器。
具体实施方式
下面结合附图和实施例对本发明进行说明,但不用来限制本发明的范围。
实施例1
本实施例提供的HiPIMS双靶共溅射制备WS2-Ti复合涂层的装置的结构如图1所示,包括真空腔体1、样品转架6、主脉冲电源3、从脉冲电源5、WS2靶材4、Ti靶材2和时序控制器7。
样品转架6设置于真空腔体1内,WS2靶材4和Ti靶材2分别固定于真空腔体1中,WS2靶材4和Ti靶材2呈八字分布,WS2靶材4和Ti靶材2分别正对样品转架6。主脉冲电源3与Ti靶材2电连接,从脉冲电源5与WS2靶材4电连接。
如图2所示,时序控制器7包括衰减器701、D触发器702和延时器703,主脉冲电源3与衰减器701连接,衰减器701与D触发器702的触发端(CP端)连接,D触发器702的触发端(CP端)为上升沿触发,D触发器702的复位端(RD端)接高电平(+5V),D触发器702的输出端(Q端)与延时器703连接,延时器703与从脉冲电源5连接。
时序控制器控制原理如下:
当主脉冲电源3输出脉冲电压时,D触发器702的触发端(CP端)探测到输入信号上升沿,此时,D触发器702的输出端(Q端)将输出高电平,该信号通过高精度延时器703延时后开启从脉冲电源,从而达到两套HiPIMS电源脉冲时序同步并延时工作的目的。
本实施例中,双靶脉冲时序设置如下:主脉冲电源的脉冲时间、脉冲周期分别设置成100us、1000us,功率设置成0.25kW,从脉冲电源的脉冲时间、脉冲周期分别设置成300us、1000us,功率设置成1.5kW,从脉冲电源设置成根据探测主脉冲电源脉冲上升沿延后500us启动。
实施例2
1、取不锈钢基体,将不锈钢基体依次置于丙酮和酒精中超声波清洗10min,接着将基体放入真空腔体内的样品转架上,抽真空至5*10-3Pa以下;
2、在室温下,通入工作气体氩气至工作压强为0.8Pa,打开偏压电源,将偏压设置成-600V,利用辉光等离子体对基片进行清洗20min;
3、将偏压设置成-100V,打开主脉冲电源,工作10min,预先沉积100-200nm厚度的Ti膜作为打底层;
4、打开从脉冲电源,根据设置的双靶脉冲时序,双靶共溅射1小时,沉积厚度约为3um的WS2-Ti复合涂层。
用扫描电子显微镜对本实施例制备的WS2-Ti复合涂层进行扫描,所得的SEM形貌图如图4所示,从图4可以看出,所制得的WS2-Ti复合涂层结构致密,颗粒尺寸接近30nm并且比较均匀。
对本实施例制备的WS2-Ti复合涂层进行X射线能谱(EDS)分析,EDS分析结果表明,所制得的WS2-Ti复合涂层中Ti的含量约为6.7%。
对比例1
所采用的的装置和实施例1不完全相同,方法与实施例2也不完全相同,本对比例没有采用时序控制器对主脉冲电源和从脉冲电源,时序控制,发现其在制备WS2-Ti复合涂层时起辉稳定性差,大多数时候不能正常起辉。因此,为了实现稳定起辉工作,只能开启WS2靶制备WS2涂层。
对实施例2和对比例1制备的WS2涂层进行摩擦系数测试,所得的摩擦系数如图4所示,由图4可知,对比例1制备的WS2涂层和实施例2制备的WS2-Ti复合涂层均具有较低的摩擦系数,但实施例2制备的WS2-Ti复合涂层的摩擦系数更低。
对实施例2制备的WS2-Ti复合涂层和对比例1制备的WS2涂层进行摩擦磨损试验,所得的磨损量如图5所示,由图5可知,经过了1200s摩擦磨损试验后,相比对比例1制备的WS2涂层,实施例2制备的WS2-Ti复合涂层磨损量明显降低,耐磨性能更加优异。
Claims (3)
1.一种HiPIMS双靶共溅射制备WS2-Ti复合涂层的装置,包括真空腔体和样品转架,样品转架设置于真空腔体内,其特征在于:还包括主脉冲电源、从脉冲电源、WS2靶材、Ti靶材和时序控制器,WS2靶材和Ti靶材分别固定于真空腔体中,WS2靶材和Ti靶材呈八字分布,WS2靶材和Ti靶材分别正对样品转架;
主脉冲电源与Ti靶材电连接,从脉冲电源与WS2靶材电连接,时序控制器分别与主脉冲电源和从脉冲电源电连接,时序控制器控制主脉冲电源和从脉冲电源的脉冲时序。
2.根据权利要求1所述的HiPIMS双靶共溅射制备WS2-Ti复合涂层的装置,其特征在于:所述的时序控制器包括衰减器、D触发器和延时器,主脉冲电源与衰减器连接,衰减器与D触发器的触发端连接,D触发器的复位端接高电平,D触发器的输出端与延时器连接,延时器与从脉冲电源连接。
3.一种HiPIMS双靶共溅射制备WS2-Ti复合涂层的方法,其特征在于包括如下步骤:
3.1、将基体进行清洗后放置于真空腔体内的样品转架上,接着抽真空;
3.2、在室温下,通入工作气体至设定工作压强,打开偏压电源,设置偏压为设定电压,利用辉光等离子体对基体进行清洗;
3.3、设置偏压为设定电压,打开主脉冲电源,预先沉积100-200nm厚度的Ti膜作为打底层;
3.4、打开从脉冲电源,根据设置的双靶脉冲时序进行双靶共溅射,沉积WS2-Ti复合涂层。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210706659.3A CN115287612B (zh) | 2022-06-21 | 2022-06-21 | 一种HiPIMS双靶共溅射制备WS2-Ti复合涂层的装置和方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210706659.3A CN115287612B (zh) | 2022-06-21 | 2022-06-21 | 一种HiPIMS双靶共溅射制备WS2-Ti复合涂层的装置和方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN115287612A true CN115287612A (zh) | 2022-11-04 |
CN115287612B CN115287612B (zh) | 2024-05-24 |
Family
ID=83821011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210706659.3A Active CN115287612B (zh) | 2022-06-21 | 2022-06-21 | 一种HiPIMS双靶共溅射制备WS2-Ti复合涂层的装置和方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN115287612B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102027563A (zh) * | 2007-12-07 | 2011-04-20 | Oc欧瑞康巴尔斯公司 | 使用hipims的反应溅射 |
JP2017166011A (ja) * | 2016-03-15 | 2017-09-21 | 住友電気工業株式会社 | 被膜、切削工具および被膜の製造方法 |
CN109136871A (zh) * | 2018-09-04 | 2019-01-04 | 北京航空航天大学 | 一种双极脉冲磁控溅射方法 |
CN110016644A (zh) * | 2019-04-19 | 2019-07-16 | 中国人民解放军空军勤务学院 | 一种钛、铅共掺杂二硫化钨复合薄膜的制备方法 |
CN114096695A (zh) * | 2019-07-19 | 2022-02-25 | 瑞士艾发科技 | 压电涂层和沉积工艺 |
CN114450434A (zh) * | 2019-07-25 | 2022-05-06 | 先进工程解决方案全球控股私人有限公司 | 脉冲dc溅射系统和方法 |
-
2022
- 2022-06-21 CN CN202210706659.3A patent/CN115287612B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102027563A (zh) * | 2007-12-07 | 2011-04-20 | Oc欧瑞康巴尔斯公司 | 使用hipims的反应溅射 |
JP2017166011A (ja) * | 2016-03-15 | 2017-09-21 | 住友電気工業株式会社 | 被膜、切削工具および被膜の製造方法 |
CN109136871A (zh) * | 2018-09-04 | 2019-01-04 | 北京航空航天大学 | 一种双极脉冲磁控溅射方法 |
CN110016644A (zh) * | 2019-04-19 | 2019-07-16 | 中国人民解放军空军勤务学院 | 一种钛、铅共掺杂二硫化钨复合薄膜的制备方法 |
CN114096695A (zh) * | 2019-07-19 | 2022-02-25 | 瑞士艾发科技 | 压电涂层和沉积工艺 |
CN114450434A (zh) * | 2019-07-25 | 2022-05-06 | 先进工程解决方案全球控股私人有限公司 | 脉冲dc溅射系统和方法 |
Non-Patent Citations (2)
Title |
---|
张赵云等: "掺杂元素Ti 对WS2 薄膜结构和摩擦学性能的影响", 《表面技术》, vol. 51, no. 6, pages 239 - 246 * |
柴利强等: "MoS2基复合薄膜制备及其结构与摩擦学性能研究", 《摩擦学学报》, vol. 36, no. 1, pages 1 - 6 * |
Also Published As
Publication number | Publication date |
---|---|
CN115287612B (zh) | 2024-05-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108977776B (zh) | 空间宽温域环境下高结合力固体润滑膜层及其制备方法 | |
CN107523790B (zh) | 一种AlCrSiCuN纳米多层涂层及其制备方法 | |
CN107557736B (zh) | 一种AlCrSiVN纳米复合涂层及其制备方法 | |
Yu et al. | Optimization of hybrid PVD process of TiAlN coatings by Taguchi method | |
CN104928638A (zh) | 一种AlCrSiN基多层纳米复合刀具涂层及其制备方法 | |
Zhou et al. | AlTiCrN coatings deposited by hybrid HIPIMS/DC magnetron co-sputtering | |
CN105925946B (zh) | 一种利用磁控溅射法在铝合金表面制备TiN或CrN薄膜的方法 | |
JPH0588310B2 (zh) | ||
CN107740053B (zh) | 一种AlCrSiN/VSiN纳米多层涂层及其制备方法 | |
CN108796453A (zh) | 一种高温耐磨的AlCrSiN纳米复合涂层及其制备方法 | |
CN112853281B (zh) | 碳基多层薄膜及其制备方法和应用 | |
CN109930108A (zh) | 一种高温耐磨自润滑TiB2基涂层及其制备方法和应用 | |
CN108359953A (zh) | 一种Cu-Ni梯度薄膜材料及其制备方法 | |
Zhao et al. | Effect of axial magnetic field on the microstructure, hardness and wear resistance of TiN films deposited by arc ion plating | |
CN115287612A (zh) | 一种HiPIMS双靶共溅射制备WS2-Ti复合涂层的装置和方法 | |
Heinrich et al. | Comparison of ZrN and TiN formed by plasma based ion implantation & deposition | |
CN104073770B (zh) | TiWAlN硬质薄膜及制备方法 | |
CN101570849B (zh) | 用二元蒸发源制备工模具硬质涂层的方法 | |
CN110484881A (zh) | 一种致密二硼化钛涂层及其制备方法和应用 | |
CN1129678C (zh) | 用电弧离子镀沉积氮化钛铌超硬质梯度薄膜的方法 | |
CN114000118B (zh) | 一种钛合金表面硬度梯度分布层厚可调的氮化层制备方法 | |
CN107227447B (zh) | 一种钛合金/二硼化锆纳米多层膜及其制备方法与应用 | |
CN109898056B (zh) | 一种基于pvd技术的块体金属/金属陶瓷纳米梯度材料及其制备方法和应用 | |
CN115110030A (zh) | 铈掺杂高熵合金氮化物涂层及其制备方法 | |
CN115161607A (zh) | 一种稀土掺杂高熵合金氮化物涂层及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |