CN115210410B - 金属填充微细结构体的制造方法 - Google Patents

金属填充微细结构体的制造方法 Download PDF

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Publication number
CN115210410B
CN115210410B CN202180017274.XA CN202180017274A CN115210410B CN 115210410 B CN115210410 B CN 115210410B CN 202180017274 A CN202180017274 A CN 202180017274A CN 115210410 B CN115210410 B CN 115210410B
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China
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metal
oxide film
filled
anodized film
filling
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Active
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CN202180017274.XA
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English (en)
Chinese (zh)
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CN115210410A (zh
Inventor
堀田吉则
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Fujifilm Corp
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Fujifilm Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C25D11/20—Electrolytic after-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/26—Anodisation of refractory metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/34—Anodisation of metals or alloys not provided for in groups C25D11/04 - C25D11/32

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • ing And Chemical Polishing (AREA)
CN202180017274.XA 2020-03-06 2021-01-12 金属填充微细结构体的制造方法 Active CN115210410B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020039126 2020-03-06
JP2020-039126 2020-03-06
PCT/JP2021/000672 WO2021176847A1 (ja) 2020-03-06 2021-01-12 金属充填微細構造体の製造方法

Publications (2)

Publication Number Publication Date
CN115210410A CN115210410A (zh) 2022-10-18
CN115210410B true CN115210410B (zh) 2025-06-06

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JP (1) JP7336584B2 (https=)
CN (1) CN115210410B (https=)
TW (1) TWI869537B (https=)
WO (1) WO2021176847A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7220796B2 (ja) * 2019-08-16 2023-02-10 富士フイルム株式会社 構造体の製造方法
JP2025042250A (ja) * 2023-09-14 2025-03-27 三菱マテリアル株式会社 接着構造体、および、接着構造体の製造方法
CN119327501B (zh) * 2024-10-17 2025-09-23 塔里木大学 Bi2SiO5/g-C3N5复合材料的合成方法及用途

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105492659A (zh) * 2013-08-30 2016-04-13 富士胶片株式会社 金属填充微细结构体的制造方法
WO2018037805A1 (ja) * 2016-08-24 2018-03-01 富士フイルム株式会社 保管方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010033939A (ja) * 2008-07-30 2010-02-12 Murata Mfg Co Ltd イオン伝導膜、イオン伝導膜の製造方法、燃料電池および水素センサ
JP6575968B2 (ja) * 2014-07-18 2019-09-18 株式会社Uacj 表面処理アルミニウム材及びその製造方法、ならびに、当該表面処理アルミニウム材／樹脂層の接合体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105492659A (zh) * 2013-08-30 2016-04-13 富士胶片株式会社 金属填充微细结构体的制造方法
WO2018037805A1 (ja) * 2016-08-24 2018-03-01 富士フイルム株式会社 保管方法

Also Published As

Publication number Publication date
JP7336584B2 (ja) 2023-08-31
TW202200489A (zh) 2022-01-01
WO2021176847A1 (ja) 2021-09-10
CN115210410A (zh) 2022-10-18
JPWO2021176847A1 (https=) 2021-09-10
TWI869537B (zh) 2025-01-11

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