CN115181958A - 一种对pecvd设备进行预镀膜处理的方法和硅片的镀膜方法 - Google Patents
一种对pecvd设备进行预镀膜处理的方法和硅片的镀膜方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 93
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 55
- 238000000576 coating method Methods 0.000 title claims abstract description 44
- 239000011248 coating agent Substances 0.000 title claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 31
- 229910052710 silicon Inorganic materials 0.000 title claims description 31
- 239000010703 silicon Substances 0.000 title claims description 31
- 238000000151 deposition Methods 0.000 claims abstract description 73
- 230000008569 process Effects 0.000 claims abstract description 59
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 57
- 230000008021 deposition Effects 0.000 claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 43
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- 238000005137 deposition process Methods 0.000 claims description 25
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 23
- 229910000077 silane Inorganic materials 0.000 claims description 23
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 22
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- 239000001569 carbon dioxide Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
本发明提供了一种对PECVD设备进行预镀膜处理的方法,包括:在PECVD工艺腔室内壁和托盘表面进行第一步沉积,形成氧化硅层;在所述氧化硅层表面进行第二步沉积,形成非晶硅层;所述第一步沉积和第二步沉积在PECVD设备的腔室中进行。本发明提供的预镀膜处理的方法能够明显改善工艺腔室内壁和托盘表面与非晶硅薄膜表面的附着力,使堆积在PECVD腔室内壁和托盘表面的非晶硅薄膜不易脱落,从而使两次腔室清洗之间的生产时间得到大幅度延长,避免了频繁的腔室清洗所占用的时间,将这部分时间用于生产,能够提升产能。
Description
技术领域
本发明属于电池技术领域,尤其涉及一种对PECVD设备进行预镀膜处理的方法和硅片的镀膜方法。
背景技术
规模化生产的p型单晶电池均采用PERC技术,制备得到的电池的平均转换效率达到23%以上;n型异质结电池的平均转换效率达到24%以上。随着电池生产成本的降低及良率的提升,电池效率的优势将逐渐扩大,异质结电池将成为电池技术的主要发展方向之一。
异质结太阳能电池的核心制造工艺为增强型等离子化学气相沉积(PECVD),通过PECVD完成在硅片正、背面的本征层非晶硅和掺杂层非晶硅/微晶硅的沉积,从而完成电池的制造。在批量生产电池时,需要使用托盘承载硅片传入PECVD工艺腔室内部,由于托盘表面材质和硅片不同,工艺腔室内壁材质和硅片也不同,如果不对托盘和腔室内壁进行处理而直接进行生产,会使电池的效率降低。针对托盘和腔室内壁与硅片材质不同导致的电池效率降低的问题,在批量生产之前,需要对腔室内壁和托盘表面进行预处理,这个过程叫做预镀膜(coating)。预镀膜的一般方法为在托盘表面沉积一层与电池本征层材质相同的非晶硅。完成预镀膜之后,腔室内壁和托盘表面具备了一层与电池本征层材质相同的非晶硅,解决了电池效率降低的问题。
但是在批量生产电池过程中,非晶硅膜层不仅会沉积在产品表面,还会沉积在腔室内壁和托盘表面,非晶硅膜层的网络结构比较致密,随着腔室内壁和托盘上沉积膜层厚度的增加,膜层表面应力也会逐渐增大,在内壁和托盘的应力发生变时,不能有效吸收和释放应力,很容易发生脱落形成粉尘。粉尘会在硅片上的非晶硅薄膜表面形成复合中心,使电池效率降低。针对粉尘问题,需要定期对工艺腔室进行清理,这个过程叫做腔室清洗(clean)。腔室清洗的方法为通入NF3,NF3电离后与腔室内壁和托盘表面的非晶硅膜进行反应,生成气态的SiF4,再通过腔室连接的干泵抽走。完成腔室清洗之后,腔室内壁和托盘表面堆积的膜层被完全清理干净,解决了粉尘问题。为了更好的解决粉尘问题,只能更加频繁的洗腔,由于腔室清洗过程中不可以进行生产,腔室清洗会占用生产时间,造成生产时间浪费以及产能损失。因此,如何延长两次腔室清洗之间的生产时间成为本领域亟待解决的问题。
发明内容
有鉴于此,本发明的目的在于提供一种对PECVD设备进行预镀膜处理的方法和硅片的镀膜方法,本发明提供的预镀膜处理的方法用于电池制备能够延长生产时间,提高产能。
本发明提供了一种对PECVD设备进行预镀膜处理的方法,包括:
在PECVD工艺腔室内壁和托盘表面进行第一步沉积,形成氧化硅层;
在所述氧化硅层表面进行第二步沉积,形成非晶硅层。
本发明提供的对PECVD设备进行预镀膜处理的方法在底部形成氧化硅层作为缓冲材料层,顶部形成非晶硅层作为接触材料层,底层氧化硅的网络结构疏松,在工艺腔室内壁和托盘应力发生变化时,可以充分吸收和释放多余的应力,起到缓冲作用,避免了过大的应力直接施加于顶部的非晶硅膜层使膜层从工艺腔室内壁和托盘表面脱落形成粉尘;顶层非晶硅的优势在于非晶硅薄膜材质和结构与电池沉积工艺的膜层一致,薄膜应力与热应力也一致,与生产过程中产生的非晶硅膜层直接接触,可形成牢固的结合;具有缓冲材料层和接触材料层相结合的结构优势。
优选的,所述第一步沉积之前还包括:
将所述托盘传入预热腔进行预热,随后将预热后的托盘传入所述PECVD工艺腔室,预热后托盘的温度为180~250℃。
本发明通过对托盘进行预热能够使托盘达到沉积过程中的温度,更好的进行氧化硅层的沉积。
优选的,所述氧化硅层的厚度为10~50nm。
优选的,所述非晶硅层的厚度为100~800nm。
本发明通过对氧化硅层和非晶硅层的厚度进行控制,能够使氧化硅层起到更好的缓冲作用避免非晶硅膜层脱落,使非晶硅层与后续的硅片镀膜层在结构和应力上保持一致,提高硅片镀膜的质量。
优选的,所述氧化硅层可以用非晶硅、氮化硅、氮氧化硅、碳化硅、碳氧化硅、碳氮化硅薄膜,或是这几种材料中的两种或多种材料搭配组成的叠层薄膜材料替代。
本发明在对PECVD设备进行预镀膜处理过程中,可以采用多种成分的含硅物质形成结构疏松的底层,在后续的硅片镀膜过程中充分吸收和释放多余的应力,避免非晶硅薄膜的脱落,优选采用氧化硅层,具有更好的效果。
优选的,所述第一步沉积过程中采用的气体包括:氢气、硅烷和二氧化碳,所述第一步沉积过程中氢气的流量为100~4000sccm,硅烷的流量为50~600sccm,二氧化碳的流量为10~1000sccm;
所述第一步沉积过程中的温度为180~250℃,压力为0.1~1.5mbar,射频功率为50~1000W,沉积时间为10~200s。
本发明通过控制第一步沉积过程中的氢气、硅烷和二氧化碳流量以及沉积温度、压力、射频功率、沉积时间等工艺参数,使获得的氧化硅层具有更好的结构特性,进而使沉积在PECVD腔室内壁和托盘表面的非晶硅薄膜不易脱落。
优选的,所述第二步沉积过程中采用的气体包括:硅烷,所述第二步沉积过程中硅烷的流量为200~2000sccm,所述第二步沉积过程中的温度为180~250℃,压力为0.1~1.5mbar,射频功率为100~2000W,沉积时间为100~800s。
本发明通过控制第二步沉积过程中的硅烷流量以及沉积温度、压力、射频功率、沉积时间等工艺参数,使获得的非晶硅层结构、应力与后续硅片的镀膜层的结构、应力更为一致,形成牢固的结合。
本发明提供了一种硅片的镀膜方法,包括:
将空托盘由自动化设备传入PECVD设备的预热腔进行预热,完成预热后将空托盘传入工艺腔进行预镀膜,先在空托盘表面进行第一步沉积,形成氧化硅层;再在所述氧化硅层表面进行第二步沉积,形成非晶硅层;向完成预镀膜的空托盘中放入硅片,在工艺腔中完成镀膜。
在批量生产电池过程中,会产生非晶硅薄膜,非晶硅薄膜在PECVD工艺腔室内壁和托盘表面的逐渐堆积,膜层厚度会越来越厚,采用本发明中的预镀膜方法,能够明显改善工艺腔室内壁和托盘表面与非晶硅薄膜表面的附着力,使堆积在PECVD腔室内壁和托盘表面的非晶硅薄膜不易脱落,避免其脱落形成粉尘,改善腔室的粉尘问题,进而避免粉尘掉落在电池表面形成复合中心导致电池效率下降,从而使两次腔室清洗之间的生产时间得到大幅度延长,避免了频繁的腔室清洗所占用的时间,将这部分时间用于生产,能够提升产能。
附图说明
图1为采用本发明实施例1提供的对PECVD设备进行预镀膜处理的方法制备的产品的光致发光测试图;
图2为采用本发明比较例1提供的对PECVD设备进行预镀膜处理的方法的制备的产品光致发光测试图;
图3为本发明提供的对PECVD设备进行预镀膜处理方法的工艺流程图;
图4为本发明实施例中PECVD设备工艺腔室内结构示意图。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明提供了一种对PECVD设备进行预镀膜处理的方法,如图3所示,包括:
在PECVD工艺腔室内壁和托盘表面进行第一步沉积,形成氧化硅层;
在所述氧化硅层表面进行第二步沉积,形成非晶硅层。
在本发明中,所述氧化硅层中的氧化硅指的是SiOx:H(0<x≤2)。在本发明中,所述氧化硅层的厚度优选为10~50nm,可以为20nm、30nm、40nm。
在本发明中,所述氧化硅层还可以采用非晶硅、氮化硅、氮氧化硅、碳化硅、碳氧化硅、碳氮化硅薄膜,或是这几种材料中的两种或多种材料搭配组成的叠层薄膜材料替代。
在本发明中,所述非晶硅层中的非晶硅指的是a-Si:H。在本发明中,所述非晶硅层的厚度优选为100~800nm,可以为200nm、300nm、400nm、500nm、600nm、700nm。
在本发明中,所述第一步沉积和第二步沉积在PECVD(Plasma Enhanced ChemicalVapor Deposition,等离子体增强化学的气相沉积法)设备的同一工艺腔室中进行。
本发明实施例中PECVD设备工艺腔室内结构示意图如图4所示,其中1为工艺腔室的腔壁,2为托盘,3为预镀膜,3.1为预镀膜中的氧化硅薄膜层,3.2为预镀膜中的非晶硅薄膜层。
在本发明中,所述第一步沉积之前优选还包括:
将所述托盘传入预热腔进行预热,随后将预热后的托盘传入所述PECVD工艺腔室,预热后托盘的温度为180~250℃。
在本发明中,所述预热后托盘的温度可以为190℃、200℃、210℃、220℃、230℃、240℃。
在本发明中,所述第一步沉积过程中采用的气体优选包括:氢气、硅烷和二氧化碳。在本发明中,所述第一步沉积过程中氢气的流量优选为100~4000sccm,可以为500sccm、1000sccm、1500sccm、2000sccm、2500sccm、3000sccm、3500sccm;所述第一步沉积过程中硅烷的流量优选为50~600sccm,可以为100sccm、200sccm、300sccm、400sccm、500sccm;所述第一步沉积过程中二氧化碳的流量优选为10~1000sccm,可以为50sccm、100sccm、200sccm、300sccm、400sccm、500sccm、600sccm、700sccm、800sccm、900sccm。
在本发明中,所述第一步沉积过程中的温度优选为180~250℃,可以为190℃、200℃、210℃、220℃、230℃、240℃;所述第一步沉积过程中的压力优选为0.1~1.5mbar,可以为0.5mbar,1.0mbar;所述第一步沉积过程中的射频功率优选为50~1000W,可以为100W,200W,300W,400W,500W,600W,700W,800W,900W;所述第一步沉积过程中的沉积时间优选为10~200s,可以为50s,100s,150s。
在本发明中,所述第二步沉积过程中采用的气体优选包括:硅烷。在本发明中,所述第二步沉积过程中硅烷的流量优选为200~2000sccm,可以为500sccm,1000sccm,1500sccm。
在本发明中,所述第二步沉积过程中的温度优选为180~250℃,可以为190℃,200℃,210℃,220℃,230℃,240℃;所述第二步沉积过程中的压力优选为0.1~1.5mbar,可以为0.5mbar,1.5mbsr;所述第二步沉积过程中的射频功率优选为100~2000W,可以为500W,1500W;所述第二步沉积过程中的沉积时间优选为100~800s,可以为200s,300s,400s,500s,600s,700s。
在本发明的实施例中,对PECVD设备进行预镀膜处理的方法包括:
步骤1),将托盘传入预热腔室进行预热,预热腔室温度设定与沉积膜层的工艺温度保持相同;
步骤2),完成预热后将托盘传入工艺腔室,在工艺腔室中进行第一步沉积,在托盘表面沉积一层氧化硅膜层;第一步沉积的温度、压力、氢气流量、硅烷流量、二氧化碳流量、射频功率、沉积时间分别设定为:180~250℃、0.1~1.5mbar、100~4000sccm、50~600sccm、10~1000sccm、50~1000W、10~200s;
步骤3),完成第一步沉积后,在第一步沉积的同一工艺腔室继续进行第二步沉积,在氧化硅膜层上沉积一层非晶硅膜层;第二步沉积的温度、压力、硅烷流量、射频功率和沉积时间分别设定为:180~250℃、0.1~1.5mbar、200~2000sccm、100~2000W、100~800s。
本发明提供了一种硅片的镀膜方法,包括:
将空托盘由自动化设备传入PECVD设备的预热腔进行预热,完成预热后将空托盘传入工艺腔进行预镀膜,先在空托盘表面进行第一步沉积,形成氧化硅层;再在所述氧化硅层表面进行第二步沉积,形成非晶硅层;向完成预镀膜的空托盘中放入硅片,在工艺腔中完成镀膜。
在本发明中,所述第一步沉积和第二步沉积的方法与上述技术方案所述一致,在此不再赘述。
本发明以下实施例中所用的PECVD设备为理想能源设备有限公司提供的的SUO11-U3 PECVD设备,其托盘可由自动化设备实现自动传入/传出预热腔室和工艺腔室。
实施例1
设定PECVD设备的预热腔室温度190~230℃,将托盘传入预热腔室完成预热,使托盘温度达到沉积膜层的工艺温度。
将托盘传入工艺腔室,在托盘表面沉积一层氧化硅膜层,沉积氧化硅膜层过程中的温度、压力、氢气流量、硅烷流量、二氧化碳流量、射频功率、沉积时间分别设定为:200℃、1.0mbar、2650sccm、370sccm、400sccm、600W、100s,使用椭偏仪测得膜层厚度为30nm。
同一工艺腔室中继续在氧化硅膜层上沉积一层非晶硅膜层,沉积非晶硅膜层过程中的温度、压力、硅烷流量、射频功率、沉积时间分别设定为:200℃、0.9mbar、1100sccm、1200W、300s,使用椭偏仪测得膜层厚度为300nm。
实施例2
设定PECVD设备的预热腔室温度190~230℃,将托盘传入预热腔室完成预热,使托盘温度达到沉积膜层的工艺温度。
将托盘传入工艺腔室,在托盘表面沉积一层氧化硅膜层,沉积氧化硅膜层过程中的温度、压力、氢气流量、硅烷流量、二氧化碳流量、射频功率、沉积时间分别设定为:200℃、1.0mbar、2600sccm、400sccm、380sccm、600W、120s,使用椭偏仪测得膜层厚度为33nm。
同一工艺腔室中继续在氧化硅膜层上沉积一层非晶硅膜层,沉积非晶硅膜层过程中的温度、压力、硅烷流量、射频功率、沉积时间分别设定为:200℃、0.9mbar、1100sccm、1200W、350s,使用椭偏仪测得膜层厚度为350nm。
实施例3
设定PECVD设备的预热腔室温度190~230℃,将托盘传入预热腔室完成预热,使托盘温度达到沉积膜层的工艺温度。
将托盘传入工艺腔室,在托盘表面沉积一层氧化硅膜层,沉积氧化硅膜层过程中的温度、压力、氢气流量、硅烷流量、二氧化碳流量、射频功率、沉积时间分别设定为:200℃、1.0mbar、2550sccm、450sccm、350sccm、600W、140s,使用椭偏仪测得膜层厚度为37nm。
同一工艺腔室中继续在氧化硅膜层上沉积一层非晶硅膜层,沉积非晶硅膜层过程中的温度、压力、硅烷流量、射频功率、沉积时间分别设定为:200℃、0.9mbar、1100sccm、1200W、400s,使用椭偏仪测得膜层厚度为400nm。
比较例1
设定PECVD设备的预热腔室温度190~230℃,将托盘传入预热腔室完成预热,使托盘温度达到沉积膜层的工艺温度。
将托盘传入工艺腔室,在托盘表面沉积一层非晶硅膜层,非晶硅膜层过程中的温度、压力、硅烷流量、射频功率、沉积时间分别设定为:200℃、0.9mbar、1100sccm、1200W、300s,使用椭偏仪测得膜层厚度为300nm。
性能检测
保持PECVD设备连续生产状态,在等离子辉光时间达到40000秒之后,使用苏州巨能图像检测技术有限公司提供的PL-WL500型光致发光测试仪对采用实施例1和比较例1中对PECVD设备进行预镀膜处理的方法制备的产品进行测试,检测结果如图1和图2所示,图1为采用实施例1中对PECVD设备进行预镀膜处理的方法制备的产品的测试图片,产品表面洁白光亮,说明实施例1中的对PECVD设备进行预镀膜处理的方法可以增强腔室内壁膜层的附着力,避免了膜层脱落问题;图2为采用比较例1中对PECVD设备进行预镀膜处理的方法制备的产品测试图片,产品表面出现大量黑色斑点,为腔室内壁膜层脱落,掉落在产品表面形成缺陷,在光致发光图像中表现为黑色斑点,说明比较例1中使用传统的预镀膜方法不能增强腔室内壁膜层的附着力,发生了膜层脱落问题。
在批量生产电池过程中,会在电池表面镀非晶硅薄膜,非晶硅薄膜在PECVD工艺腔室内壁和托盘表面的逐渐堆积,膜层厚度会越来越厚,本发明提供的对PECVD设备进行预镀膜处理的方法能够明显改善工艺腔室内壁和托盘表面与非晶硅薄膜表面的附着力,使堆积在PECVD腔室内壁和托盘表面的非晶硅薄膜不易脱落,改善腔室的粉尘问题,进而避免粉尘掉落在电池表面形成复合中心导致电池效率下降,使两次腔室清洗之间的生产时间得到大幅度延长,避免了频繁的腔室清洗所占用的时间,将这部分时间用于生产,能够提升产能。
虽然已参考本发明的特定实施例描述并说明本发明,但是这些描述和说明并不限制本发明。所属领域的技术人员可清晰地理解,在不脱离如由所附权利要求书定义的本发明的真实精神和范围的情况下,可进行各种改变,以使特定情形、材料、物质组成、物质、方法或过程适宜于本申请的目标、精神和范围。所有此类修改都意图在此所附权利要求书的范围内。虽然已参考按特定次序执行的特定操作描述本文中所公开的方法,但应理解,可在不脱离本发明的教示的情况下组合、细分或重新排序这些操作以形成等效方法。因此,除非本文中特别指示,否则操作的次序和分组并非本申请的限制。
Claims (8)
1.一种对PECVD设备进行预镀膜处理的方法,其特征在于,包括:
在PECVD工艺腔室内壁和托盘表面进行第一步沉积,形成氧化硅层;
在所述氧化硅层表面进行第二步沉积,形成非晶硅层。
2.根据权利要求1所述的对PECVD设备进行预镀膜处理的方法,其特征在于,所述第一步沉积之前还包括:
将所述托盘传入预热腔进行预热,随后将预热后的托盘传入所述PECVD工艺腔室,预热后托盘的温度为180~250℃。
3.根据权利要求1所述的对PECVD设备进行预镀膜处理的方法,其特征在于,所述氧化硅层的厚度为10~50nm。
4.根据权利要求1所述的对PECVD设备进行预镀膜处理的方法,其特征在于,所述非晶硅层的厚度为100~800nm。
5.根据权利要求1所述的对PECVD设备进行预镀膜处理的方法,其特征在于:所述氧化硅层可以用非晶硅、氮化硅、氮氧化硅、碳化硅、碳氧化硅、碳氮化硅薄膜,或是这几种材料中的两种或多种材料搭配组成的叠层薄膜材料替代。
6.根据权利要求1所述的对PECVD设备进行预镀膜处理的方法,其特征在于,所述第一步沉积过程中采用的气体包括:氢气、硅烷和二氧化碳,所述第一步沉积过程中氢气的流量为100~4000sccm,硅烷的流量为50~600sccm,二氧化碳的流量为10~1000sccm;
所述第一步沉积过程中的温度为180~250℃,压力为0.1~1.5mbar,射频功率为50~1000W,沉积时间为10~200s。
7.根据权利要求1所述的对PECVD设备进行预镀膜处理的方法,其特征在于,所述第二步沉积过程中采用的气体包括:硅烷,所述第二步沉积过程中硅烷的流量为200~2000sccm,所述第二步沉积过程中的温度为180~250℃,压力为0.1~1.5mbar,射频功率为100~2000W,沉积时间为100~800s。
8.一种硅片的镀膜方法,其特征在于,包括:
将空托盘由自动化设备传入PECVD设备的预热腔进行预热,完成预热后将空托盘传入工艺腔进行预镀膜,先在空托盘表面进行第一步沉积,形成氧化硅层;再在所述氧化硅层表面进行第二步沉积,形成非晶硅层;向完成预镀膜的空托盘中放入硅片,在工艺腔中完成镀膜。
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