CN111304635A - 一种石墨舟防粉尘产生的预镀膜方法 - Google Patents

一种石墨舟防粉尘产生的预镀膜方法 Download PDF

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CN111304635A
CN111304635A CN202010127838.2A CN202010127838A CN111304635A CN 111304635 A CN111304635 A CN 111304635A CN 202010127838 A CN202010127838 A CN 202010127838A CN 111304635 A CN111304635 A CN 111304635A
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廖明墩
曾俞衡
闫宝杰
叶继春
陈晖�
王玉明
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Suzhou Tuosheng Intelligent Equipment Co ltd
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract

本发明公开了一种石墨舟防粉尘产生的预镀膜方法,包括以下步骤:步骤1,将石墨舟进行清洗及烘干;步骤2,将清洗干净的硅片作为假片,装载到石墨舟上的相应位置;步骤3,将石墨舟置于镀膜设备中,在石墨舟的表面沉积出非晶硅薄膜,作为非晶硅薄膜的结构缓冲层可以显著降低结构热应力。根据本发明,其通过在石墨舟片上预先沉积一定厚度的氮化硅、碳化硅等薄膜,此类薄膜的热膨胀系数通常约为4.0~5.0×10‑6K‑1,作为非晶硅薄膜的结构缓冲层可以显著降低结构热应力,从而大大延长石墨舟的清洗周期,降低生产成本。

Description

一种石墨舟防粉尘产生的预镀膜方法
技术领域
本发明涉及太阳能光伏电池制造领域,特别涉及一种石墨舟防粉尘产生的预镀膜方法。
背景技术
管式等离子体化学气相外延(PECVD)是制备非晶硅的技术方法之一。该技术方法一般以石墨舟作为衬底的载板,石墨舟由相互平行且相互绝缘的镂空石墨舟片组成,通过卡点的方式将硅片固定在镂空区域,硅片边缘与石墨舟接触以传导电流,石墨舟及硅片作为电极,在一定温度(100~500℃)条件下,通入一定比例的硅烷、氢气、磷烷、硼烷等特气组分,利用射频激发产生等离子体并在硅片上沉积非晶硅薄膜。
PECVD淀积的薄膜具有优良的电学性能、良好的衬底附着性以及极佳的台阶覆盖性,正由于这些优点使其在超大规模集成电路、光电器件、MEMS等领域具有广泛的应用。
在产业化生产应用中,石墨舟要经过装样-进炉-抽真空-升温-沉积-降温-破真空-出炉的一系列流程。按照此流程,石墨舟需经过升温-降温-升温-降温-不断循环的过程。在实际生产过程中,我们发现仅需短短的数个循环后,石墨舟上沉积的非晶硅薄膜出现了粉状剥离的情况,而剥离的粉尘会导致后续硅片的摩擦损伤和污染,导致工艺效果下降。在此情况下,通常需要立即清洗石墨舟以消除粉尘,这将大幅度增加石墨舟的维护频率,降低了生产效率,增加了生产成本。
有鉴于此,实有必要开发一种石墨舟防粉尘产生的预镀膜方法,用以解决上述问题。
发明内容
针对现有技术中存在的不足之处,本发明的主要目的是,提供一种石墨舟防粉尘产生的预镀膜方法,即通过在石墨舟片上预先沉积一定厚度的氮化硅、碳化硅等薄膜,此类薄膜的热膨胀系数通常约为4.0~5.0×10-6K-1,作为非晶硅薄膜的结构缓冲层可以显著降低结构热应力,从而大大延长石墨舟的清洗周期,降低生产成本。
为了实现根据本发明的上述目的和其他优点,提供了一种石墨舟防粉尘产生的预镀膜方法,包括以下步骤:
步骤1,将石墨舟进行清洗及烘干;
步骤2,将清洗干净的硅片作为假片,装载到石墨舟上的相应位置;
步骤3,将石墨舟置于镀膜设备中,在石墨舟的表面沉积出非晶硅薄膜,作为非晶硅薄膜的结构缓冲层可以显著降低结构热应力。
可选的,步骤3中非晶硅薄膜为氮化硅薄膜。
可选的,步骤3中非晶硅薄膜为碳化硅薄膜。
可选的,步骤3中薄膜沉积方法为磁控溅射预镀膜法。
可选的,步骤3中薄膜沉积方法为等离子体化学气相外延预镀膜法。
可选的,步骤3中的非晶硅薄膜厚度为1~5微米。
上述技术方案中的一个技术方案具有如下优点或有益效果:其通过在石墨舟片上预先沉积一定厚度的氮化硅、碳化硅等薄膜,此类薄膜的热膨胀系数通常约为4.0~5.0×10-6K-1,作为非晶硅薄膜的结构缓冲层可以显著降低结构热应力,从而大大延长石墨舟的清洗周期,降低生产成本。
附图说明
图1为根据本发明一个实施方式提出的石墨舟防粉尘产生的预镀膜方法进行预镀膜后的石墨舟片结构图;
图中附图标记为:1-石墨舟片;2氮化硅或碳化硅薄膜;3-非晶硅膜。
具体实施方式
下面结合附图对本发明做进一步的详细说明,本发明的前述和其它目的、特征、方面和优点将变得更加明显,以令本领域技术人员参照说明书文字能够据以实施。
实施例1
一种石墨舟防粉尘产生的预镀膜方法,包括以下步骤:
步骤1,将石墨舟置于清洗机中,以DI水为清洗剂清洗半小时以上,然后进行烘干;
步骤2,将清洗干净的硅片作为假片,装载到石墨舟上的相应位置;
步骤3,将石墨舟送入PECVD炉管中,等待腔体压力降至4×10-6Torr,且腔体温度升至450℃,按1:10流量比例通入硅烷和氨气,通过射频电源激发产生等离子体,经半小时,石墨舟上沉积约200nm厚的氮化硅薄膜。
随后进行连续的非晶硅薄膜沉积实验,每批次非晶硅薄膜沉积的厚度约为100nm,经40批次后,石英舟上非晶硅薄膜累积的厚度约为4微米,目测未发现非晶硅薄膜有粉状剥离的情况。
实施例2
一种石墨舟防粉尘产生的预镀膜方法,包括以下步骤:
步骤1,将石墨舟置于清洗机中,以DI水为清洗剂清洗半小时以上,然后进行烘干;
步骤2,将清洗干净的硅片作为假片,装载到石墨舟上的相应位置;
步骤3,将石墨舟送入PECVD炉管中,等待腔体压力降至4×10-6Torr,且腔体温度升至450℃,按1:4流量比例通入硅烷和甲烷,通过射频电源激发产生等离子体,经半小时,石墨舟上沉积约250nm厚的碳化硅薄膜。
随后进行连续的非晶硅薄膜沉积实验,每批次非晶硅薄膜沉积的厚度约为100nm,经30批次后,石英舟上非晶硅薄膜累积的厚度约为3微米,目测未发现非晶硅薄膜有粉状剥离的情况。
通过分析发现,在热循环过程中,热应力产生引起的膜层剥落,其热应力产生是根本原因,当这种热应力超过膜层的结合强度时,膜层就会录落。非晶硅膜的剥落的问题主要与不同材料间热膨胀系数的差异有关。石墨舟片的热膨胀系数约为8.0×10-6K-1,而非晶硅薄膜的热膨胀系数约为1.0×10-6K-1。在降温过程中,非晶硅薄膜与石墨舟间将产生结构热应力,随着薄膜沉积厚度的累积,这一结构热应力愈发显著,最终导致薄膜呈现粉状剥离。
本发明的优点如下:
(1)通过预镀的氮化硅、碳化硅等薄膜作为结构缓冲层,可以有效降低沉积非晶硅薄膜后产生的结构热应力。
(2)氮化硅、碳化硅薄膜结构稳定不会对非晶硅薄膜的性能产生影响。
(3)氮化硅、碳化硅薄膜的制备方法简单,可以采用常规的磁控溅射法或PECVD法制备,工艺简单。
(4)基于预镀膜的石墨舟,非晶硅薄膜连续沉积厚度可以在3微米上不出现粉状剥离的情况,大大延长了石墨舟的使用周期。
(5)清洗石墨舟时,非晶硅薄膜可以用热的高浓度氢氧化钾或氢氧化钠快速腐蚀去除,而氮化硅或碳化硅薄膜基本不会被高浓度碱腐蚀(腐蚀速率低于20nm/hr),因此在预镀膜后,氮化硅或碳化硅薄膜层可以长期存在并发挥作用。
这里说明的设备数量和处理规模是用来简化本发明的说明的。对本发明的应用、修改和变化对本领域的技术人员来说是显而易见的。
尽管本发明的实施方案已公开如上,但其并不仅限于说明书和实施方式中所列运用,它完全可以被适用于各种适合本发明的领域,对于熟悉本领域的人员而言,可容易地实现另外的修改,因此在不背离权利要求及等同范围所限定的一般概念下,本发明并不限于特定的细节和这里示出与描述的图例。

Claims (6)

1.一种石墨舟防粉尘产生的预镀膜方法,其特征在于,包含以下步骤:
步骤1,将石墨舟进行清洗及烘干;
步骤2,将清洗干净的硅片作为假片,装载到石墨舟上的相应位置;
步骤3,将石墨舟置于镀膜设备中,在石墨舟的表面沉积出非晶硅薄膜,作为非晶硅薄膜的结构缓冲层可以显著降低结构热应力。
2.如权利要求1所述的石墨舟防粉尘产生的预镀膜方法,其特征在于,步骤3中非晶硅薄膜为氮化硅薄膜。
3.如权利要求1所述的石墨舟防粉尘产生的预镀膜方法,其特征在于,步骤3中非晶硅薄膜为碳化硅薄膜。
4.如权利要求1所述的石墨舟防粉尘产生的预镀膜方法,其特征在于,步骤3中薄膜沉积方法为磁控溅射预镀膜法。
5.如权利要求1所述的石墨舟防粉尘产生的预镀膜方法,其特征在于,步骤3中薄膜沉积方法为等离子体化学气相外延预镀膜法。
6.如权利要求1所述的石墨舟防粉尘产生的预镀膜方法,其特征在于,步骤3中的非晶硅薄膜厚度为1~5微米。
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Cited By (3)

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CN111589769A (zh) * 2020-05-25 2020-08-28 常州时创能源股份有限公司 硅片pecvd镀非晶硅用石墨舟的清洗方法
CN113774362A (zh) * 2021-09-13 2021-12-10 浙江爱旭太阳能科技有限公司 一种pecvd设备宕机后的复机方法
CN115181958A (zh) * 2022-05-20 2022-10-14 东方日升(常州)新能源有限公司 一种对pecvd设备进行预镀膜处理的方法和硅片的镀膜方法

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Application publication date: 20200619