CN1151558C - 集成电路装置及其制造方法 - Google Patents
集成电路装置及其制造方法 Download PDFInfo
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- CN1151558C CN1151558C CNB971196745A CN97119674A CN1151558C CN 1151558 C CN1151558 C CN 1151558C CN B971196745 A CNB971196745 A CN B971196745A CN 97119674 A CN97119674 A CN 97119674A CN 1151558 C CN1151558 C CN 1151558C
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- Prior art keywords
- alkyl
- diacid chloride
- arrcostab
- acid ester
- poly amic
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- 125000000217 alkyl group Chemical group 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims description 44
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 32
- 229920005575 poly(amic acid) Polymers 0.000 claims description 30
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- 239000002184 metal Substances 0.000 claims description 18
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- 229910000077 silane Inorganic materials 0.000 claims description 12
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- 238000006243 chemical reaction Methods 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 8
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- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 2
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- 125000004957 naphthylene group Chemical group 0.000 description 2
- CTSLXHKWHWQRSH-UHFFFAOYSA-N oxalyl chloride Chemical compound ClC(=O)C(Cl)=O CTSLXHKWHWQRSH-UHFFFAOYSA-N 0.000 description 2
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- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
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- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 125000000876 trifluoromethoxy group Chemical group FC(F)(F)O* 0.000 description 1
- PZJJKWKADRNWSW-UHFFFAOYSA-N trimethoxysilicon Chemical group CO[Si](OC)OC PZJJKWKADRNWSW-UHFFFAOYSA-N 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Abstract
本发明涉及一种集成电路装置,它包括(i)衬底;(ii)位于衬底上的金属电路线和(iii)位于电路线附近的电介质材料。电介质材料包括有机聚硅氧烷和最好被烷氧基甲硅烷基烷基封端的聚酰胺酸酯的反应产物。
Description
本发明涉及包括改进了的电介质材料的集成电路以及制造该集成电路的方法。
在微电子工业中一直希望在多层集成电路装置,例如存储器和逻辑芯片中提高电路密度,从而提高它们的性能和降低它们的成本。为了实现上述目标,希望降低芯片的最小特征尺寸,例如电路线宽,和降低所插入的电介质材料的介电常数,以便在串扰和电容性耦合没有增加的情况下能使电路线更加密集。此外,希望降低例如在包含输入/输出电路的集成电路装置的线尾端(BEOL)部分中所使用的电介质材料的介电常数,来降低该装置所必需的驱动电流和功率消耗。目前的电介质材料是二氧化硅,它具有约4.0的介电常数。这一材料具有为承受与半导体制造有关的加工操作和热循环所需要的机械和热性能。但是,人们所希望的是,未来的集成电路装置的电介质材料显示出比二氧化硅所显示出的介电常数更低的介电常数(例如,<3.0)。
所以,本发明的目的是提供包括改进了的电介质材料的一种改进的集成电路装置。
其它目的和优点将从下面的公开内容变得很清楚。
本发明涉及集成电路装置,它包括:(i)衬底;(ii)位于衬底上的互连式金属电路线和(iii)位于电路线附近的电介质材料(在电路线上面和/或在电路线之间)。电介质材料包括有机聚硅氧烷和最好被三烷氧基甲硅烷基烷基封端的聚酰胺酸酯的反应产物。在一个实施方案中,有机聚硅氧烷是倍半硅氧烷和具有小于0.5微米的相畴的电介质材料。
本发明还涉及集成电路封装结构体、材料组合物和制造本发明的集成电路装置的方法。
在下面的叙述中和从附图中给出本发明的更加详细的公开内容。
图1是本发明的集成电路装置的一部分的截面图。
图2-5示出了制造本发明的集成电路装置的方法。
图6-8示出了制造本发明的集成电路装置的另一方法。
本发明的集成电路装置的实例示于图1中。该装置一般包括衬底2、金属电路线4和电介质材料6。该衬底2具有在其中形成的垂直金属栓8。该电路线用来分配装置中的电信号并为该装置提供功率输入和从该装置输出信号。合适的集成电路装置一般包括多层的由垂直金属栓互连的电路线。
本发明的装置的合适衬底包括硅、二氧化硅、玻璃、氮化硅、陶瓷、铝、铜和砷化镓。其它合适衬底对于本技术领域中的熟练人员来说是已知的。在多层集成电路装置中,绝缘的、平面化(planarized)的电路线的底层也可用作衬底。
合适的电路线一般包括金属类导电材料,如铜、铝、钨、金、银或它们的合金。电路线可选择涂敷金属衬层,如镍、钽或铬层,或其它层如阻挡层或粘合层(例如SiN,TiN)。
本发明的另一实例涉及为一个或多个集成电路芯片提供信号和工作电流的集成电路封装装置(多芯片模件),它包括:(1)具有与电路板连接的导电体的衬底,(ii)位于衬底上的多个交替的电绝缘和导电的层,其中至少一导电层包括本发明的改进的电介质膜和(iii)使导电体、导电层和集成电路芯片相互电连接的多个通路。
集成电路封装装置是在集成电路芯片和电路板之间的封装的中间级。集成电路芯片被安装在集成电路封装装置上,而封装装置安装在电路板上。
封装装置的衬底一般是惰性衬底,如玻璃、硅或陶瓷。该衬底可选择地具有设置在其中的集成电路。该衬底备有导电体,如使封装装置与电路板进行电连接的输入/输出管脚(I/O管脚)。多个电绝缘和导电的层(具有设置在介电绝缘材料中的导电电路的层)是交替叠加在衬底上。这些层一般通过逐层方法在衬底上形成,其中各层是在单独的加工步骤中形成的。
该封装装置还包括接受器,用于接受集成电路芯片。合适的接受器包括用于接受芯片I/O管脚或金属焊接区(用于焊接到芯片)的插接板。一般来说,封装装置也包括多个一般垂直地对准以便使I/O管脚、导电层和设置在接受器中的集成电路芯片产生电互连的多个电通路。该功能结构体和制造集成电路封装装置的方法对于本技术领域中的熟练人员来说是熟知的,如US专利4,489,364,4,508,981,4,628,411和4,811,082中所公开的内容,这些专利文献被引入供参考。
本发明的关键性的特征是一种电介质材料,它位于电路线的上面和/或在电路线之间并在衬底上。在多层集成电路装置中,电介质材料通常被平面化而用作以光刻方式形成下一层电路线的衬底。该电介质材料包括有机聚硅氧烷(organic polysilica)与被(RO)m(R″)nSiR′-(端基)封端的聚酰胺酸酯,其中m是1,2或3;m+n=3;R和R′是烃基和R″是氢或烃基。端基最好是单、二或三C1-6烷氧基C1-6烷基或芳基(例如亚苯基,亚苄基,亚萘基或亚蒽基)。这里所使用的烃基是指有碳原子连接于分子的剩余部分并主要具有烃的特性的那些基于烃的基团(单或二官能化)。烃基包括以下这些:
(1)烃基;即,脂族基(例如C1-C10烷基或链烯基和C5-C10环烷基或环链烯基),芳族基脂族基取代的芳族基,芳族基取代的脂族基或类似基团。这些基团对于本技术领域中的熟练人员来说是已知的;实例包括甲基(对于二官能化烃基而言是亚甲基),乙基,丁基,己基,辛基,癸基,十二烷基,十四烷基,十八烷基,环己基,苯基,萘基,苄基和蒽基(所有的异构体也包括在内)。
(2)取代的烃基;即,含有非烃取代基的基团,在本发明的上下文中,该取代基不改变该基团的主要的烃特性。所有那些本技术领域中的熟练人员都知道合适的取代基(例如卤素,烷氧基,烷酯基,硝基,烷基亚砜基(alkylsulfoxy))。
(3)杂基团;即,在本发明全文中主要具有烃特性的基团,它含有除了在由碳原子组成的链或环中存在的碳原子以外的原子。合适的杂原子对于本技术领域中的那些熟练人员来说是显而易见的,并包括,例如,氮、氧和硫。
一般来说,在基于烃的基团中对于每10个碳原子将有不超过约3个的取代基或杂原子,和最好不超过一个。
带有端基的聚酰胺酸酯最好从(i)二胺;(ii)二酯二酰卤(最好氯)和氨基烷氧基硅烷的反应得到。
合适的二胺具有式H2NRNH2,其中R是
其中X选自具有1-3个碳原子或卤化碳原子的亚烷基链、羰基、-O-、-S-、-SO2-、和-N-烷基。该亚烷基链可进一步被卤代烷基(例如三氟甲基)和苯基所取代。芳族环可选择地被例如三氟甲氧基或类似基团取代。二胺的合适R包括:
其中y选自三氟甲基、苯基或取代苯基。合适的芳族二胺是:
对-亚苯基二胺;
4,4′-二氨基二苯基胺;联苯胺;
4,4′-二氨基二苯基醚;
1,5-二氨基萘;
3,3′-二甲基-4,4′-二氨基-联苯;
3,3′-二甲氧基联苯胺;
1,4-双(对-氨基等氧基)苯;
1,3-双(对-氨基苯基)苯;
2,2-双[4-氨基苯基]六氟丙烷。
二胺中的R也可以是脂族或环脂族基,如亚环烷基,例如亚环己基。合适的脂族二胺包括1,4-二氨基环己烷和双(4-氨基环己基)甲烷。
较好的二胺是在以上通式中X为>C(苯基)(三氟甲基)的二胺。较好的二胺是9,9′-双(4-氨基基)芴(FDA);4,4′-氧化二苯胺和1,1-双(4-氨基苯基)-1-苯基-2,2,2-三氟乙烷(3FDA)。
二酯二酰氯适宜地从具有以下通式的相应二酸酐制到:
其中Ar选自:
合适的二酸酐包括:
1,2,4,5-苯二酸酐
二苯甲酮二酸酐
2,2-双(3,4-二羧基苯基)丙烷二酸酐
3,3′,4,4′-联苯四羧酸二酐
双(3,4-二羧基苯基)醚二酸酐
双(3,4-羧基苯基)硫醚二酸酐
双酚A双醚二酸酐
2,2-双(3,4-二羧基苯基)六氟丙烷二酸酐
2,3,6,7-萘四羧酸二酐
双(3,4-二羧基苯基)砜二酸酐
1,2,5,6-萘四羧酸二酐
2,2′,3,3′-联苯四羧酸二酐
3,4,3′,4′-二苯甲酮四羧酸二酐;和
三联苯二酸酐
较好的二酯二酰氯是1,2,4,5-苯二酰氯二酸酯。
该二酯二酰氯是通过让相应的酸酐顺序地与合适的醇和草酰氯反应形成的。合适的醇是乙醇。亚胺化速度能够因酯基(例如来自乙醇的乙基酯取代基)的电子取代效应而变化,而且用于本发明中的其它合适的醇类对于本技术领域中的熟练人员来说是已知的,正如Hergenrother的“HighPerformance Polymers”(1994)的139页中所公开的内容,其公开内容被引入本文供参考。合适的二酯二酰氯是1,2,4,5-苯四羧酸二酯二酰氯、联苯四羧酸二酯二酰氯和氧化双邻苯二甲酸二乙酯二酰氯。其它合适的二胺和二酯二酰氯对于本技术领域中的熟练人员来说是已知的,正如US专利4,720,539和共同未决的一般性转让的US专利申请系列号No.08/058,303(1992年5月10日),其公开内容被引入本文供参考。
合适的氨基烷氧基硅烷具有通式(H2NR′Si(R″)m(OR)n,其中m+n=3(n最好是3),R最好是C1-6烷基和R′是位于氨基和硅原子中间的间隔基,最好是C1-6亚烷基(例如亚甲基)或无杂原子芳基(没有杂原子的烃芳基)如亚苯基、亚苄基或亚萘基。由于在反应过程中R被分解并从组成中除去,R可以是可接受地干扰反应的任何有机基,这些基团应该被认为等同于此处所述的。如果n低于3,R″最好是氢或低级C1-6烷基。较好的硅烷是氨基苯基三甲氧基硅烷。其它合适的硅烷反应物对于本技术领域中的熟练人员来说是已知的。
为了形成聚酰胺酸酯反应物,将三种前身物按合适的化学计量用量(例如二胺和二酯二酰氯按1∶1比例,从Carothers等式计算的硅烷的量足以提供所需分子量的聚合物产物)溶于合适的溶剂(如NMP)中,得到烷氧基甲硅烷基烷基封端的聚酰胺酸酯。烷氧基甲硅烷基烷基封端的聚酰胺酸酯反应物的分子量(Mn)为约5,000-20,000g/mol。合适的烷氧基甲硅烷基烷基封端的聚酰胺酸酯具有以下结构:
其中R是苯基或C1-6烷基和聚酰胺酸酯取代基是乙基。
有机聚硅氧烷是包括硅、碳、氧和氢原子的聚合物。合适聚硅氧烷包括(i)部分缩合的烷氧基硅烷(例如,通过控制水解Mn为约20,000的C1-6烷氧基硅烷(例如四乙氧基硅烷)而部分缩合);(ii)具有组成为RSiO3和R2SiO2的有机改性的硅酸酯,其中R是有机取代基;(iii)具有组成为SiOR4的部分缩合的原硅酸酯;(iv)硅氧烷和(v)倍半硅氧烷。倍半硅氧烷是RSiO1.5型的聚合的硅酸酯物质,其中R是有机取代基。
用于本发明中的合适有机聚硅氧烷对于本技术领域中的熟练人员是已知的,有机聚硅氧烷最好是四乙氧基硅烷、倍半硅氧烷或它们的混合物。本发明的合适的倍半硅氧烷是烷基(甲基)苯基倍半硅氧烷,它可以通过商业途径购买(例如购自Techniglass Perrysburg,Ohio公司的GR950)。其它合适的倍半硅氧烷对于本技术领域中的熟练人员是已知的,如公开于US专利5,384,376和Chem.Rev.95,1409-1430(1995)中的那些内容,这些文献的公开内容被引入本文供参考。
电介质组合物适宜地包括约5-95wt%的聚酰亚胺组分并在两步方法中形成。第一步包括在室温下将倍半硅氧烷和烷氧基甲硅烷基烷基封端的聚酰胺酸酯溶于合适的溶剂(高沸点溶剂,例如N-甲基-2-吡咯烷酮NMP)中。将该组合物直接或以分步进行的方式加热至较高的温度(例如经2小时升温至200℃,然后升高至400℃并保持2小时)使聚酰胺酸酯扩链和亚胺化,官能化聚酰亚胺与聚硅氧烷交替缩合。
本发明的电介质组合物在80℃下的介电常数低于3.2,最好低于3和更为理想是低于2.9。该组合物具有小于0.5微米,较为理想是小于0.3微米的相畴,这将得到增强的机械和抛光特性以及增强的各向同性、光学性能和电介质性能。此外,电介质组合物所具有的机械性能足以抵抗开裂并能够以化学和机械方法进行平面化处理(planarized),以便以光刻方式在多层集成电路装置中形成附加的电路层。电介质组合物具有高的击穿电压,增强的韧性和高的抗裂性,甚至在高环境湿度下对于厚膜也是如此。电介质组合物是光学透明的并能很好地粘附于衬底。该电介质组合物在加热过程中发生最小的收缩。
由有机聚硅氧烷和端基封端的聚酰胺酸酯的反应所形成的组合物也具有其它用途,如接触透镜上和镜片上的保护涂层和其它在外层空间中的使用目的。
本发明还涉及制造集成电路装置的方法。参见图2,一个方法实例的第一步涉及在衬底2上设置一层本发明的电介质组合物10,该组合物包括三烷氧基甲硅烷基烷基封端的聚酰胺酸酯和倍半硅氧烷。示出衬底2具有垂直金属栓8。将组合物溶于合适的溶剂如N,N′-二甲基丙撑脲(DMPU),NMP或类似物中,并由已知方法如旋转涂敷或喷涂或刀刮法涂敷在衬底上。该方法的第二步包括将组合物加热至升高的温度,引起使聚酰胺酸酯发生亚胺化并由溶胶-凝胶方法使甲硅烷基活性基发生交叉缩合。该组合物最好在碱如胺或布朗斯特碱的存在下加热。该碱同时催化亚胺化和交替缩合反应,使之具有较低的初始固化温度,例如低于200℃。该碱是有机胺这一点是合适的。该胺最好具有高沸点并在反应结束之后通过加热除去。合适的碱是N-甲基二乙醇胺。其它合适的碱对于本技术领域中的熟练人员来说是已知的,如公开在US专利5,206,117中,其公开内容被引入本文供参考。类似地,该反应能够由布朗斯特酸或路易斯酸催化。
参见图3,该方法的第三步包括以光刻方式对电介质组合物的层10进行图形刻蚀,从而在组合物层中形成沟槽12(凹槽)。在图3中显示沟槽12延伸至衬底2和延伸至金属栓8。采用光刻方式的图形刻蚀一般包括(i)在电介质组合物层10上涂敷正性或负性光刻胶,如由Shipley或HoechstCelanese(AZ光刻胶)销售的光刻胶;(ii)以图案方式(通过掩模)将光刻胶暴露于诸如电磁辐射的辐射源,如UV或远UV中;(iii)例如用合适的碱性显影剂对光刻胶中的图形进行显影;和(iv)用合适的转移技术,如反应离子刻蚀法(RIE),穿过电介质组合物层10将图象转移到衬底2上。合适的光刻法图形刻蚀技术对于本技术领域中的熟练人员来说是众所周知的,如公开于Thompson等人的“微光刻技术的介绍(Introduction toMicrolithography)”(1994),其公开内容被引入供参考。
参见图4,在形成本发明的集成电路的方法的第四步中,在带有图案的电介质层10上淀积金属膜14。较好的金属材料包括铜,钨和铝。可由已知技术如化学法气相淀积(CVD)、等离子增强的CVD、电子和非电子淀积、溅射或类似方法将金属适当地淀积在带图案的电介质层上。
参见图5,该方法的最后一步包括除去多余的金属材料(例如使金属膜14平面化),从而总的来说膜14与经图形刻蚀的电介质层10保持相同的高度。通过使用化学/机械抛光或选择性湿法或干法刻蚀完成平面化。合适的化学/机械抛光对于本技术领域中的熟练人员来说是已知的。
参见图6-8,其中示出了本发明的制造集成电路装置的方法的其它实例。在这一实例中方法的第一步包括在衬底18上淀积金属膜16。衬底18上也可以备有垂直金属栓20。参见图7,在该方法的第二步中,用光刻方式通过掩模对金属膜进行图形刻蚀,形成沟槽22。参见图8,在该方法的第三步中,本发明的电介质组合物层24淀积在经图形刻蚀的金属膜16上。在该方法的最后一步中,组合物被加热使三烷氧基甲硅烷基烷基封端的聚酰胺酸酯发生亚胺化并缩合甲硅烷基反应物。以可选择的方式对电介质层进行平面化处理,为多层集成电路中后续加工作准备。
下面的实施例是为了更加详细地说明本发明的方法。详细的制备方法落入以上更一般性描述的方法之范围内,是为了举例用的。实施例的目的只是为了举例,不应认为限定了本发明的范围。
实施例1三甲氧基甲硅烷基封端的聚酰胺酸乙酯的合成
间-1,2,4,5-苯四羧酸二酯二酰氯(PMDA)
1,1-双(4-氨基苯基)-1-苯基-2,2,2-三氟乙烷(3FDA)
在装有顶部搅拌器、氮气导入管和加料漏斗的三颈烧瓶中加入9.48mmol(3.2456g)3FDA,1.04mmol(0.2218g)氨基苯基三甲氧基硅烷,25mmol(2g)吡啶和50mL蒸馏NMP。体系连续地保持在正氮气压力下。将反应混合物冷却至0℃。将PMDA二酯二酰氯(10mmol,3.4716g)溶于~100mL二氯甲烷中并定量转移至加料漏斗中。将二氯甲烷溶液滴加到反应混合物中。在加料结束之后,让聚合反应在室温下进行一夜。通过在甲醇中的高剪切沉淀分离出聚(酰胺酸乙酯),过滤并在60℃的真空烘箱中干燥。(Mn=10,000)
实施例2组合物的制备
将来自实施例1的聚(酰胺酸乙酯)齐聚物溶于DMPU中。向该溶液中加入聚倍半硅氧烷(购自Techniglass的GR950F)。形成了透明的琥珀状溶液,固体含量是37wt%和聚(酰胺酸烷基酯)含量是23wt%。该溶液随后通过旋转涂敷浇铸在玻璃板上形成1-10微米厚的膜。通过在N2气氛下,分别在250℃和400℃下加热聚合物膜2小时来完成亚胺化。将固化的聚酰亚胺膜缓慢冷却至室温。固化的聚酰亚胺膜没有开裂,显示出的相畴为1000埃,在80℃下介电常数为大约2.9;热应力约30mPa和折射率约1.56。
虽然已经关于特定的实例描述了本发明,但本发明的详细描述不应认为是本发明的限定范围,显然,在不脱离本发明的精神和范围的前提下各种实例,变化和改进都应保留,应该理解的是这些等同的实例包括在本发明的范围内。
Claims (26)
1、一种集成电路装置,包括:
(a)衬底;
(b)位于衬底上的金属电路线,
其特征在于,所述集成电路装置还包括(c)位于电路线附近的电介质组合物,该组合物包括有机聚硅氧烷和被(RO)m(R″)nSiR′-封端的聚酰胺酸酯的反应产物,式中R和R′分别是烃基;R″是氢或烃基;m是1,2或3以及n+m=3。
2、权利要求1所述的装置,其特征在于有机聚硅氧烷是C1-6烷氧基硅烷,倍半硅氧烷或它们的混合物。
3、权利要求2所述的装置,其特征在于倍半硅氧烷是苯基/C1-6烷基倍半硅氧烷。
4、权利要求2所述的装置,其特征在于聚酰胺酸酯被三C1-10烷氧基甲硅烷基C1-10烷基或三C1-10烷氧基甲硅烷基芳基封端。
5、权利要求3所述的装置,其特征在于聚酰胺酸酯包括选自9,9′-双(4-氨基苯基)芴(FDA)、4,4′-氧化二苯胺和1,1-双(4-氨基苯基)-1-苯基-2,2,2-三氟乙烷的二胺和选自1,2,4,5-苯四羧酸二C1-6烷基酯二酰氯、氧化双邻苯二甲酸二C1-6烷基酯二酰氯和联苯四羧酸二C1-6烷基酯二酰氯的二酯二酰氯。
6、权利要求2所述的装置,其特征在于电介质组合物具有低于3.2的介电常数。
7、权利要求2所述的装置,其特征在于电介质组合物具有小于0.5微米的相畴。
8、一种制造集成电路的方法,包括:
(a)在衬底上设置一层电介质组合物,该组合物包括有机聚硅氧烷和被(RO)m(R″)nSiR′-封端的聚酰胺酸酯的反应产物,式中R和R′分别是烃基;R″是氢或烃基;m是1,2或3以及n+m=3;
(b)加热组合物使反应物反应;
(c)对电介质层以光刻方式进行图形刻蚀;
(d)在经图形刻蚀的电介质层上淀积金属膜;和
(e)对膜进行平面化处理形成集成电路。
9、权利要求8所述的方法,其特征在于有机聚硅氧烷是C1-6烷氧基硅烷、倍半硅氧烷或它们的混合物。
10、权利要求9所述的方法,其特征在于聚酰胺酸酯被三C1-10烷氧基甲硅烷基C1-10烷基或三C1-10烷氧基甲硅烷基芳基封端。
11、权利要求9所述的方法,其特征在于聚酰胺酸酯包括选自9,9′-双(4-氨基苯基)芴(FDA)、4,4′-氧化二苯胺和1,1-双(4-氨基苯基)-1-苯基-2,2,2-三氟乙烷的二胺和选自1,2,4,5-苯四羧酸二C1-6烷基酯二酰氯、氧化双邻苯二甲酸二C1-6烷基酯二酰氯和联苯四羧酸二C1-6烷基酯二酰氯的二酯二酰氯。
12、权利要求8所述的方法,其特征在于组合物是在碱的存在下加热。
13、一种制造集成电路的方法,包括:
(a)在衬底上淀积金属膜;
(b)对金属膜以光刻方式进行图形刻蚀;
(c)在经图形刻蚀的金属膜上淀积一层电介质组合物,该组合物包括有机聚硅氧烷和被(RO)m(R″)nSiR′-封端的聚酰胺酸酯的反应产物,式中R和R′分别是烃基;R″是氢或烃基;m是1,2或3以及n+m=3;
(d)加热组合物使反应物反应。
14、权利要求8所述的方法,其特征在于有机聚硅氧烷是C1-6烷氧基硅烷,倍半硅氧烷或它们的混合物。
15、权利要求14所述的方法,其特征在于聚酰胺酸酯被三C1-10烷氧基甲硅烷基C1-10烷基或三C1-10烷氧基甲硅烷基芳基封端。
16、权利要求14所述的方法,其特征在于聚酰胺酸酯包括选自9,9′-双(4-氨基苯基)芴(FDA)、4,4′-氧化二苯胺和1,1-双(4-氨基苯基)-1-苯基-2,2,2-三氟乙烷的二胺和选自1,2,4,5-苯四羧酸二C1-6烷基酯二酰氯、氧化双邻苯二甲酸二C1-6烷基酯二酰氯和联苯四羧酸二C1-6烷基酯二酰氯的二酯二酰氯。
17、权利要求13所述的方法,其特征在于组合物是在碱的存在下加热。
18、一种电介质组合物,其特征在于包括有机聚硅氧烷和被(RO)m(R″)nSiR′-封端的聚酰胺酸酯的反应产物,式中R和R′是烃基;R″是氢或烃基;m是1,2或3以及n+m=3;
19、权利要求18所述的组合物,其特征在于有机聚硅氧烷是C1-6烷氧基硅烷,倍半硅氧烷或它们的混合物。
20、权利要求19所述的组合物,其特征在于聚酰胺酸酯被三C1-10烷氧基甲硅烷基C1-10烷基或三C1-10烷氧基甲硅烷基芳基封端。
21、权利要求20所述的组合物,其特征在于聚酰胺酸酯包括选自9,9′-双(4-氨基苯基)芴(FDA)、4,4′-氧化二苯胺和1,1-双(4-氨基苯基)-1-苯基-2,2,2-三氟乙烷的二胺和选自1,2,4,5-苯四羧酸二C1-6烷基酯二酰氯、氧化双邻苯二甲酸二C1-6烷基酯二酰氯和联苯四羧酸二C1-6烷基酯二酰氯的二酯二酰氯。
22、一种为集成电路芯片提供信号和工作电流的集成电路封装装置,它包括:
(i)具有与电路板连接的导电体的衬底;
(ii)位于衬底上的多个交替的电绝缘和导电的层;
(iii)使导电体、导电层和集成电路芯片相互电连接的多个通路;
其特征在于,所述各层中至少有一层包括有机聚硅氧烷和被(RO)m(R″)nSiR′-封端的聚酰胺酸酯的反应产物,式中R和R′分别是烃基;R″是氢或烃基;m是1,2或3以及n+m=3。
23、权利要求22所述的装置,其特征在于有机聚硅氧烷是C1-6烷氧基硅烷,倍半硅氧烷或它们的混合物。
24、权利要求23所述的装置,其特征在于倍半硅氧烷是苯基/C1-6烷基倍半硅氧烷。
25、权利要求23所述的装置,其特征在于聚酰胺酸酯被三C1-10烷氧基甲硅烷基C1-10烷基或三C1-10烷氧基甲硅烷基芳基封端。
26、权利要求25所述的装置,其特征在于聚酰胺酸酯包括选自9,9′-双(4-氨基苯基)芴(FDA)、4,4′-氧化二苯胺和1,1-双(4-氨基苯基)-1-苯基-2,2,2-三氟乙烷的二胺和选自1,2,4,5-苯四羧酸二C1-6烷基酯二酰氯、氧化双邻苯二甲酸二C1-6烷基酯二酰氯和联苯四羧酸二C1-6烷基酯二酰氯的二酯二酰氯。
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- 1997-06-30 KR KR1019970029756A patent/KR100315936B1/ko not_active IP Right Cessation
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- 1997-09-26 CN CNB971196745A patent/CN1151558C/zh not_active Expired - Fee Related
- 1997-10-09 EP EP97307999A patent/EP0838853A3/en not_active Withdrawn
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1998
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KR19980032201A (ko) | 1998-07-25 |
US5962113A (en) | 1999-10-05 |
KR100315936B1 (ko) | 2002-02-19 |
JPH10135202A (ja) | 1998-05-22 |
EP0838853A2 (en) | 1998-04-29 |
CN1188987A (zh) | 1998-07-29 |
EP0838853A3 (en) | 2000-01-05 |
SG63750A1 (en) | 1999-03-30 |
MY118011A (en) | 2004-08-30 |
TW436946B (en) | 2001-05-28 |
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