CN115079475B - 电光装置和电子设备 - Google Patents

电光装置和电子设备 Download PDF

Info

Publication number
CN115079475B
CN115079475B CN202210241969.2A CN202210241969A CN115079475B CN 115079475 B CN115079475 B CN 115079475B CN 202210241969 A CN202210241969 A CN 202210241969A CN 115079475 B CN115079475 B CN 115079475B
Authority
CN
China
Prior art keywords
groove
film
electro
optical device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210241969.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN115079475A (zh
Inventor
横田智己
森田喜久哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN115079475A publication Critical patent/CN115079475A/zh
Application granted granted Critical
Publication of CN115079475B publication Critical patent/CN115079475B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
CN202210241969.2A 2021-03-12 2022-03-11 电光装置和电子设备 Active CN115079475B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-039804 2021-03-12
JP2021039804A JP7647194B2 (ja) 2021-03-12 2021-03-12 電気光学装置および電子機器

Publications (2)

Publication Number Publication Date
CN115079475A CN115079475A (zh) 2022-09-20
CN115079475B true CN115079475B (zh) 2023-05-02

Family

ID=83194714

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210241969.2A Active CN115079475B (zh) 2021-03-12 2022-03-11 电光装置和电子设备

Country Status (3)

Country Link
US (1) US11480839B2 (https=)
JP (1) JP7647194B2 (https=)
CN (1) CN115079475B (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006253173A (ja) * 2005-03-08 2006-09-21 Sanyo Epson Imaging Devices Corp 電気光学装置、その製造方法、及び電子機器
CN102096532A (zh) * 2009-12-15 2011-06-15 索尼公司 静电电容型输入装置及其制造方法
CN103189970A (zh) * 2011-10-28 2013-07-03 松下电器产业株式会社 薄膜半导体装置以及薄膜半导体装置的制造方法
JP2018136478A (ja) * 2017-02-23 2018-08-30 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、および電子機器
CN111610667A (zh) * 2019-02-26 2020-09-01 夏普株式会社 显示装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003152086A (ja) * 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP2004325627A (ja) 2003-04-23 2004-11-18 Sharp Corp アクティブマトリクス基板および表示装置
JP2004334064A (ja) * 2003-05-12 2004-11-25 Sharp Corp 液晶表示装置及びその製造方法
JP2004363300A (ja) 2003-06-04 2004-12-24 Sharp Corp 液晶表示装置
JP2006064967A (ja) 2004-08-26 2006-03-09 Sharp Corp アクティブマトリクス基板及びそれを用いた容量性表示装置
JP2007212499A (ja) * 2006-02-07 2007-08-23 Seiko Epson Corp 液晶装置及びプロジェクタ
JP4225348B2 (ja) * 2006-12-15 2009-02-18 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4225347B2 (ja) * 2006-12-15 2009-02-18 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5810589B2 (ja) * 2011-04-01 2015-11-11 セイコーエプソン株式会社 電気光学装置、投射型表示装置、および電子機器
JP2015094880A (ja) * 2013-11-13 2015-05-18 セイコーエプソン株式会社 電気光学装置、および電子機器
JP2017009887A (ja) * 2015-06-25 2017-01-12 セイコーエプソン株式会社 電気光学装置および電子機器
JP3199691U (ja) * 2015-06-25 2015-09-03 セイコーエプソン株式会社 電気光学装置および電子機器
JP6044700B2 (ja) * 2015-12-01 2016-12-14 セイコーエプソン株式会社 電気光学装置、及び電子機器
CN106125436B (zh) * 2016-08-31 2019-09-20 京东方科技集团股份有限公司 一种阵列基板、显示面板及制作方法
JP6891502B2 (ja) 2017-01-16 2021-06-18 セイコーエプソン株式会社 電気光学装置、電子機器
JP6702394B2 (ja) * 2018-10-26 2020-06-03 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、および電気光学装置製造用部材

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006253173A (ja) * 2005-03-08 2006-09-21 Sanyo Epson Imaging Devices Corp 電気光学装置、その製造方法、及び電子機器
CN102096532A (zh) * 2009-12-15 2011-06-15 索尼公司 静电电容型输入装置及其制造方法
CN103189970A (zh) * 2011-10-28 2013-07-03 松下电器产业株式会社 薄膜半导体装置以及薄膜半导体装置的制造方法
JP2018136478A (ja) * 2017-02-23 2018-08-30 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、および電子機器
CN111610667A (zh) * 2019-02-26 2020-09-01 夏普株式会社 显示装置

Also Published As

Publication number Publication date
US11480839B2 (en) 2022-10-25
US20220291560A1 (en) 2022-09-15
CN115079475A (zh) 2022-09-20
JP7647194B2 (ja) 2025-03-18
JP2022139424A (ja) 2022-09-26

Similar Documents

Publication Publication Date Title
US20200312890A1 (en) Electro-optical device and electronic apparatus
JP6593416B2 (ja) 電気光学装置および電子機器
US20200183223A1 (en) Electro-optical device and electronic apparatus
CN115079472B (zh) 电光装置和电子设备
US11662640B2 (en) Electro-optical device with interlayer insulating layers and contact holes, and electronic apparatus
CN115079474B (zh) 电光装置和电子设备
CN115079475B (zh) 电光装置和电子设备
US11493811B2 (en) Electro-optical device and electronic apparatus
US11822201B2 (en) Electro-optical device and electronic apparatus
JP2020095077A (ja) 電気光学装置および電子機器
JP7327184B2 (ja) 電気光学装置、および電子機器
JP7447724B2 (ja) 電気光学装置、および電子機器
CN115079473B (zh) 电光装置和电子设备
JP7322727B2 (ja) 電気光学装置、および電子機器
US11681187B2 (en) Electro-optical device and electronic device
US20190129263A1 (en) Electro-optical device and electronic apparatus
JP7434996B2 (ja) 電気光学装置、および電子機器
US20220100015A1 (en) Electro-optical device and electronic apparatus
JP2022044972A (ja) 電気光学装置、および電子機器
JP2020170025A (ja) 電気光学装置、電子機器、および電気光学装置の製造方法
JP2020052156A (ja) 電気光学装置、および電子機器
JP2019040073A (ja) 電気光学装置および電子機器

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant