JP7647194B2 - 電気光学装置および電子機器 - Google Patents

電気光学装置および電子機器 Download PDF

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Publication number
JP7647194B2
JP7647194B2 JP2021039804A JP2021039804A JP7647194B2 JP 7647194 B2 JP7647194 B2 JP 7647194B2 JP 2021039804 A JP2021039804 A JP 2021039804A JP 2021039804 A JP2021039804 A JP 2021039804A JP 7647194 B2 JP7647194 B2 JP 7647194B2
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Prior art keywords
groove
film
electro
conductive film
optical device
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JP2021039804A
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English (en)
Japanese (ja)
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JP2022139424A5 (https=
JP2022139424A (ja
Inventor
智己 横田
喜久哉 森田
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2021039804A priority Critical patent/JP7647194B2/ja
Priority to CN202210241969.2A priority patent/CN115079475B/zh
Priority to US17/692,180 priority patent/US11480839B2/en
Publication of JP2022139424A publication Critical patent/JP2022139424A/ja
Publication of JP2022139424A5 publication Critical patent/JP2022139424A5/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2021039804A 2021-03-12 2021-03-12 電気光学装置および電子機器 Active JP7647194B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021039804A JP7647194B2 (ja) 2021-03-12 2021-03-12 電気光学装置および電子機器
CN202210241969.2A CN115079475B (zh) 2021-03-12 2022-03-11 电光装置和电子设备
US17/692,180 US11480839B2 (en) 2021-03-12 2022-03-11 Electro-optical device and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021039804A JP7647194B2 (ja) 2021-03-12 2021-03-12 電気光学装置および電子機器

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JP2022139424A JP2022139424A (ja) 2022-09-26
JP2022139424A5 JP2022139424A5 (https=) 2024-01-25
JP7647194B2 true JP7647194B2 (ja) 2025-03-18

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US (1) US11480839B2 (https=)
JP (1) JP7647194B2 (https=)
CN (1) CN115079475B (https=)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003152086A (ja) 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP2004334064A (ja) 2003-05-12 2004-11-25 Sharp Corp 液晶表示装置及びその製造方法
JP2008151900A (ja) 2006-12-15 2008-07-03 Seiko Epson Corp 電気光学装置及び電子機器
JP2008151901A (ja) 2006-12-15 2008-07-03 Seiko Epson Corp 電気光学装置及び電子機器
JP2015094880A (ja) 2013-11-13 2015-05-18 セイコーエプソン株式会社 電気光学装置、および電子機器
JP3199691U (ja) 2015-06-25 2015-09-03 セイコーエプソン株式会社 電気光学装置および電子機器
JP2016035596A (ja) 2015-12-01 2016-03-17 セイコーエプソン株式会社 電気光学装置、及び電子機器
JP2017009887A (ja) 2015-06-25 2017-01-12 セイコーエプソン株式会社 電気光学装置および電子機器
US20180366492A1 (en) 2016-08-31 2018-12-20 Boe Technology Group Co., Ltd. Array Substrate, Display Panel, Manufacturing Method, and Display Device
JP2020067609A (ja) 2018-10-26 2020-04-30 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、および電気光学装置製造用部材

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004325627A (ja) 2003-04-23 2004-11-18 Sharp Corp アクティブマトリクス基板および表示装置
JP2004363300A (ja) 2003-06-04 2004-12-24 Sharp Corp 液晶表示装置
JP2006064967A (ja) 2004-08-26 2006-03-09 Sharp Corp アクティブマトリクス基板及びそれを用いた容量性表示装置
JP2006253173A (ja) * 2005-03-08 2006-09-21 Sanyo Epson Imaging Devices Corp 電気光学装置、その製造方法、及び電子機器
JP2007212499A (ja) * 2006-02-07 2007-08-23 Seiko Epson Corp 液晶装置及びプロジェクタ
JP2011128674A (ja) * 2009-12-15 2011-06-30 Sony Corp 静電容量型入力装置およびその製造方法
JP5810589B2 (ja) * 2011-04-01 2015-11-11 セイコーエプソン株式会社 電気光学装置、投射型表示装置、および電子機器
JP5792745B2 (ja) * 2011-10-28 2015-10-14 株式会社Ｊｏｌｅｄ 薄膜半導体装置及び薄膜半導体装置の製造方法
JP6891502B2 (ja) 2017-01-16 2021-06-18 セイコーエプソン株式会社 電気光学装置、電子機器
JP2018136478A (ja) * 2017-02-23 2018-08-30 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、および電子機器
JP6970701B2 (ja) * 2019-02-26 2021-11-24 シャープ株式会社 表示装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003152086A (ja) 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP2004334064A (ja) 2003-05-12 2004-11-25 Sharp Corp 液晶表示装置及びその製造方法
JP2008151900A (ja) 2006-12-15 2008-07-03 Seiko Epson Corp 電気光学装置及び電子機器
JP2008151901A (ja) 2006-12-15 2008-07-03 Seiko Epson Corp 電気光学装置及び電子機器
JP2015094880A (ja) 2013-11-13 2015-05-18 セイコーエプソン株式会社 電気光学装置、および電子機器
JP3199691U (ja) 2015-06-25 2015-09-03 セイコーエプソン株式会社 電気光学装置および電子機器
JP2017009887A (ja) 2015-06-25 2017-01-12 セイコーエプソン株式会社 電気光学装置および電子機器
JP2016035596A (ja) 2015-12-01 2016-03-17 セイコーエプソン株式会社 電気光学装置、及び電子機器
US20180366492A1 (en) 2016-08-31 2018-12-20 Boe Technology Group Co., Ltd. Array Substrate, Display Panel, Manufacturing Method, and Display Device
JP2020067609A (ja) 2018-10-26 2020-04-30 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、および電気光学装置製造用部材

Also Published As

Publication number Publication date
CN115079475B (zh) 2023-05-02
US11480839B2 (en) 2022-10-25
US20220291560A1 (en) 2022-09-15
CN115079475A (zh) 2022-09-20
JP2022139424A (ja) 2022-09-26

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