CN115079472B - 电光装置和电子设备 - Google Patents

电光装置和电子设备 Download PDF

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Publication number
CN115079472B
CN115079472B CN202210236262.2A CN202210236262A CN115079472B CN 115079472 B CN115079472 B CN 115079472B CN 202210236262 A CN202210236262 A CN 202210236262A CN 115079472 B CN115079472 B CN 115079472B
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electro
plan
substrate
semiconductor layer
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Chinese (zh)
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CN115079472A (zh
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森田喜久哉
杉本阳平
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Seiko Epson Corp
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Seiko Epson Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
CN202210236262.2A 2021-03-12 2022-03-10 电光装置和电子设备 Active CN115079472B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-040015 2021-03-12
JP2021040015A JP7631924B2 (ja) 2021-03-12 2021-03-12 電気光学装置および電子機器

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CN115079472A CN115079472A (zh) 2022-09-20
CN115079472B true CN115079472B (zh) 2023-05-16

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7753946B2 (ja) * 2022-03-28 2025-10-15 セイコーエプソン株式会社 電気光学装置、および表示装置
JP2025029950A (ja) * 2023-08-22 2025-03-07 セイコーエプソン株式会社 電気光学装置および電子機器

Citations (8)

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US6493046B1 (en) * 1999-07-02 2002-12-10 Sharp Kabushiki Kaisha Liquid crystal display device with capacitor in contact hole, and fabrication method for the same
JP2006171136A (ja) * 2004-12-14 2006-06-29 Sony Corp 薄膜半導体装置および液晶パネル
CN101004522A (zh) * 2006-01-16 2007-07-25 精工爱普生株式会社 电光装置、电子设备及投影机
CN101131519A (zh) * 2006-08-24 2008-02-27 精工爱普生株式会社 电光装置用基板、电光装置以及电子设备
TW200903123A (en) * 2007-02-16 2009-01-16 Seiko Epson Corp Electro-optical device substrate, method of manufacturing the same, electro-optical device and electronic apparatus
JP2010060686A (ja) * 2008-09-02 2010-03-18 Seiko Epson Corp 電気光学装置及びその製造方法並びに電子機器
CN106569367A (zh) * 2015-10-08 2017-04-19 精工爱普生株式会社 电光装置、电子设备、电光装置的制造方法
CN108027541A (zh) * 2015-09-11 2018-05-11 三菱电机株式会社 薄膜晶体管基板及其制造方法

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CN1203360C (zh) * 2000-04-21 2005-05-25 精工爱普生株式会社 电光学装置、投影显示装置及电光学装置的制造方法
US7027109B2 (en) * 2001-08-03 2006-04-11 Nec Corporation TFT array substrate and active-matrix addressing liquid-crystal display device
JP2003152086A (ja) * 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP2004271903A (ja) 2003-03-07 2004-09-30 Sharp Corp 薄膜トランジスタ基板およびその製造方法並びに液晶表示装置
JP2004325627A (ja) * 2003-04-23 2004-11-18 Sharp Corp アクティブマトリクス基板および表示装置
JP2004334064A (ja) 2003-05-12 2004-11-25 Sharp Corp 液晶表示装置及びその製造方法
JP2004363300A (ja) * 2003-06-04 2004-12-24 Sharp Corp 液晶表示装置
JP4324441B2 (ja) 2003-10-09 2009-09-02 シャープ株式会社 素子基板、表示装置
JP2006138960A (ja) * 2004-11-10 2006-06-01 Nec Corp 液晶表示装置及びその製造方法並びに投射表示装置
JP4650153B2 (ja) * 2005-08-05 2011-03-16 セイコーエプソン株式会社 電気光学装置、電子機器及び電気光学装置の製造方法
US7616275B2 (en) * 2007-02-07 2009-11-10 Seiko Epson Corporation Electro-optical device substrate, electro-optical device, and electronic apparatus
JP2012155197A (ja) 2011-01-27 2012-08-16 Seiko Epson Corp 電気光学装置及び電子機器
JP2015094880A (ja) * 2013-11-13 2015-05-18 セイコーエプソン株式会社 電気光学装置、および電子機器
TW201539095A (zh) * 2014-04-01 2015-10-16 Seiko Epson Corp 光電裝置及電子機器
JP6597768B2 (ja) * 2017-12-27 2019-10-30 セイコーエプソン株式会社 電気光学装置および電子機器
US11275278B2 (en) * 2018-04-17 2022-03-15 Seiko Epson Corporation Electro-optical device and electronic apparatus
JP2021012328A (ja) * 2019-07-09 2021-02-04 セイコーエプソン株式会社 電気光学装置、および電子機器
JP7352826B2 (ja) * 2019-10-21 2023-09-29 セイコーエプソン株式会社 電気光学装置および電子機器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6493046B1 (en) * 1999-07-02 2002-12-10 Sharp Kabushiki Kaisha Liquid crystal display device with capacitor in contact hole, and fabrication method for the same
JP2006171136A (ja) * 2004-12-14 2006-06-29 Sony Corp 薄膜半導体装置および液晶パネル
CN101004522A (zh) * 2006-01-16 2007-07-25 精工爱普生株式会社 电光装置、电子设备及投影机
CN101131519A (zh) * 2006-08-24 2008-02-27 精工爱普生株式会社 电光装置用基板、电光装置以及电子设备
TW200903123A (en) * 2007-02-16 2009-01-16 Seiko Epson Corp Electro-optical device substrate, method of manufacturing the same, electro-optical device and electronic apparatus
JP2010060686A (ja) * 2008-09-02 2010-03-18 Seiko Epson Corp 電気光学装置及びその製造方法並びに電子機器
CN108027541A (zh) * 2015-09-11 2018-05-11 三菱电机株式会社 薄膜晶体管基板及其制造方法
CN106569367A (zh) * 2015-10-08 2017-04-19 精工爱普生株式会社 电光装置、电子设备、电光装置的制造方法

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US20220291556A1 (en) 2022-09-15
JP2022139567A (ja) 2022-09-26
JP7631924B2 (ja) 2025-02-19
US11754892B2 (en) 2023-09-12
CN115079472A (zh) 2022-09-20

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