CN115066738A - 边缘等离子体密度倾斜控制的可调谐性 - Google Patents

边缘等离子体密度倾斜控制的可调谐性 Download PDF

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Publication number
CN115066738A
CN115066738A CN202180013570.2A CN202180013570A CN115066738A CN 115066738 A CN115066738 A CN 115066738A CN 202180013570 A CN202180013570 A CN 202180013570A CN 115066738 A CN115066738 A CN 115066738A
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China
Prior art keywords
plasma
sidewall
segments
liner structure
section
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Pending
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CN202180013570.2A
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English (en)
Chinese (zh)
Inventor
约翰·霍兰德
斯蒂芬·K·皮奥特罗斯基
金宰元
普拉蒂克·曼克迪
柳川拓海
吴东骏
安东尼·德拉列拉
金泽华
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Lam Research Corp
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Lam Research Corp
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Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN115066738A publication Critical patent/CN115066738A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN202180013570.2A 2020-02-10 2021-02-02 边缘等离子体密度倾斜控制的可调谐性 Pending CN115066738A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062972479P 2020-02-10 2020-02-10
US62/972,479 2020-02-10
PCT/US2021/016267 WO2021162895A1 (en) 2020-02-10 2021-02-02 Tunability of edge plasma density tilt control

Publications (1)

Publication Number Publication Date
CN115066738A true CN115066738A (zh) 2022-09-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180013570.2A Pending CN115066738A (zh) 2020-02-10 2021-02-02 边缘等离子体密度倾斜控制的可调谐性

Country Status (6)

Country Link
US (1) US12505991B2 (cg-RX-API-DMAC7.html)
JP (1) JP7699600B2 (cg-RX-API-DMAC7.html)
KR (1) KR20220137989A (cg-RX-API-DMAC7.html)
CN (1) CN115066738A (cg-RX-API-DMAC7.html)
TW (1) TWI902754B (cg-RX-API-DMAC7.html)
WO (1) WO2021162895A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023055836A1 (en) * 2021-09-29 2023-04-06 Lam Research Corporation Edge capacitively coupled plasma chamber structure
CN116614926A (zh) * 2022-02-09 2023-08-18 中微半导体设备(上海)股份有限公司 等离子体约束系统及方法
WO2025122449A1 (en) * 2023-12-07 2025-06-12 Lam Research Corporation Liner assembly for substrate processing chambers
US12614701B2 (en) 2024-05-15 2026-04-28 Applied Materials, Inc. Substrate processing chamber with plasma confinement

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3458912B2 (ja) 1994-11-15 2003-10-20 アネルバ株式会社 プラズマ処理装置
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6547979B1 (en) * 2000-08-31 2003-04-15 Micron Technology, Inc. Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers
US8608851B2 (en) 2005-10-14 2013-12-17 Advanced Micro-Fabrication Equipment, Inc. Asia Plasma confinement apparatus, and method for confining a plasma
JP5231038B2 (ja) * 2008-02-18 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体
US8540844B2 (en) 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8360003B2 (en) * 2009-07-13 2013-01-29 Applied Materials, Inc. Plasma reactor with uniform process rate distribution by improved RF ground return path
US8597462B2 (en) * 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
TWI502617B (zh) * 2010-07-21 2015-10-01 應用材料股份有限公司 用於調整電偏斜的方法、電漿處理裝置與襯管組件
US20140053984A1 (en) * 2012-08-27 2014-02-27 Hyun Ho Doh Symmetric return liner for modulating azimuthal non-uniformity in a plasma processing system
US9123661B2 (en) 2013-08-07 2015-09-01 Lam Research Corporation Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
KR101670457B1 (ko) * 2014-11-28 2016-10-31 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
US9963782B2 (en) * 2015-02-12 2018-05-08 Asm Ip Holding B.V. Semiconductor manufacturing apparatus
JP6523714B2 (ja) * 2015-03-05 2019-06-05 東京エレクトロン株式会社 プラズマ処理装置
US10763082B2 (en) * 2016-03-04 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber of plasma system, liner for plasma system and method for installing liner to plasma system
JP7017306B2 (ja) * 2016-11-29 2022-02-08 株式会社日立ハイテク 真空処理装置

Also Published As

Publication number Publication date
JP7699600B2 (ja) 2025-06-27
US12505991B2 (en) 2025-12-23
WO2021162895A1 (en) 2021-08-19
KR20220137989A (ko) 2022-10-12
US20230063007A1 (en) 2023-03-02
TW202147380A (zh) 2021-12-16
JP2023513225A (ja) 2023-03-30
TWI902754B (zh) 2025-11-01

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