KR20220137989A - 틸팅 제어를 위한 에지 플라즈마 밀도의 튜닝 가능성 (tunability) - Google Patents
틸팅 제어를 위한 에지 플라즈마 밀도의 튜닝 가능성 (tunability) Download PDFInfo
- Publication number
- KR20220137989A KR20220137989A KR1020227031465A KR20227031465A KR20220137989A KR 20220137989 A KR20220137989 A KR 20220137989A KR 1020227031465 A KR1020227031465 A KR 1020227031465A KR 20227031465 A KR20227031465 A KR 20227031465A KR 20220137989 A KR20220137989 A KR 20220137989A
- Authority
- KR
- South Korea
- Prior art keywords
- plasma
- sidewall
- sections
- shroud
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062972479P | 2020-02-10 | 2020-02-10 | |
| US62/972,479 | 2020-02-10 | ||
| PCT/US2021/016267 WO2021162895A1 (en) | 2020-02-10 | 2021-02-02 | Tunability of edge plasma density tilt control |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20220137989A true KR20220137989A (ko) | 2022-10-12 |
Family
ID=77291658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227031465A Ceased KR20220137989A (ko) | 2020-02-10 | 2021-02-02 | 틸팅 제어를 위한 에지 플라즈마 밀도의 튜닝 가능성 (tunability) |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12505991B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP7699600B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR20220137989A (cg-RX-API-DMAC7.html) |
| CN (1) | CN115066738A (cg-RX-API-DMAC7.html) |
| TW (1) | TWI902754B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2021162895A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023055836A1 (en) * | 2021-09-29 | 2023-04-06 | Lam Research Corporation | Edge capacitively coupled plasma chamber structure |
| CN116614926A (zh) * | 2022-02-09 | 2023-08-18 | 中微半导体设备(上海)股份有限公司 | 等离子体约束系统及方法 |
| WO2025122449A1 (en) * | 2023-12-07 | 2025-06-12 | Lam Research Corporation | Liner assembly for substrate processing chambers |
| US12614701B2 (en) | 2024-05-15 | 2026-04-28 | Applied Materials, Inc. | Substrate processing chamber with plasma confinement |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3458912B2 (ja) | 1994-11-15 | 2003-10-20 | アネルバ株式会社 | プラズマ処理装置 |
| US6073577A (en) * | 1998-06-30 | 2000-06-13 | Lam Research Corporation | Electrode for plasma processes and method for manufacture and use thereof |
| US6178919B1 (en) * | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
| US6673198B1 (en) * | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US6547979B1 (en) * | 2000-08-31 | 2003-04-15 | Micron Technology, Inc. | Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers |
| US8608851B2 (en) | 2005-10-14 | 2013-12-17 | Advanced Micro-Fabrication Equipment, Inc. Asia | Plasma confinement apparatus, and method for confining a plasma |
| JP5231038B2 (ja) * | 2008-02-18 | 2013-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体 |
| US8540844B2 (en) | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
| US8360003B2 (en) * | 2009-07-13 | 2013-01-29 | Applied Materials, Inc. | Plasma reactor with uniform process rate distribution by improved RF ground return path |
| US8597462B2 (en) * | 2010-05-21 | 2013-12-03 | Lam Research Corporation | Movable chamber liner plasma confinement screen combination for plasma processing apparatuses |
| TWI502617B (zh) * | 2010-07-21 | 2015-10-01 | 應用材料股份有限公司 | 用於調整電偏斜的方法、電漿處理裝置與襯管組件 |
| US20140053984A1 (en) * | 2012-08-27 | 2014-02-27 | Hyun Ho Doh | Symmetric return liner for modulating azimuthal non-uniformity in a plasma processing system |
| US9123661B2 (en) | 2013-08-07 | 2015-09-01 | Lam Research Corporation | Silicon containing confinement ring for plasma processing apparatus and method of forming thereof |
| KR101670457B1 (ko) * | 2014-11-28 | 2016-10-31 | 세메스 주식회사 | 지지 유닛 및 이를 포함하는 기판 처리 장치 |
| US9963782B2 (en) * | 2015-02-12 | 2018-05-08 | Asm Ip Holding B.V. | Semiconductor manufacturing apparatus |
| JP6523714B2 (ja) * | 2015-03-05 | 2019-06-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US10763082B2 (en) * | 2016-03-04 | 2020-09-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chamber of plasma system, liner for plasma system and method for installing liner to plasma system |
| JP7017306B2 (ja) * | 2016-11-29 | 2022-02-08 | 株式会社日立ハイテク | 真空処理装置 |
-
2021
- 2021-02-02 KR KR1020227031465A patent/KR20220137989A/ko not_active Ceased
- 2021-02-02 JP JP2022548103A patent/JP7699600B2/ja active Active
- 2021-02-02 WO PCT/US2021/016267 patent/WO2021162895A1/en not_active Ceased
- 2021-02-02 US US17/797,669 patent/US12505991B2/en active Active
- 2021-02-02 CN CN202180013570.2A patent/CN115066738A/zh active Pending
- 2021-02-08 TW TW110104668A patent/TWI902754B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP7699600B2 (ja) | 2025-06-27 |
| US12505991B2 (en) | 2025-12-23 |
| WO2021162895A1 (en) | 2021-08-19 |
| CN115066738A (zh) | 2022-09-16 |
| US20230063007A1 (en) | 2023-03-02 |
| TW202147380A (zh) | 2021-12-16 |
| JP2023513225A (ja) | 2023-03-30 |
| TWI902754B (zh) | 2025-11-01 |
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| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
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St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
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St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
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St.27 status event code: A-2-3-E10-E13-lim-X000 |
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Free format text: ST27 STATUS EVENT CODE: N-2-6-B10-B15-EXM-PE0601 (AS PROVIDED BY THE NATIONAL OFFICE) |
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