JP7699600B2 - 傾斜制御のためのエッジプラズマ密度の調整可能性 - Google Patents

傾斜制御のためのエッジプラズマ密度の調整可能性 Download PDF

Info

Publication number
JP7699600B2
JP7699600B2 JP2022548103A JP2022548103A JP7699600B2 JP 7699600 B2 JP7699600 B2 JP 7699600B2 JP 2022548103 A JP2022548103 A JP 2022548103A JP 2022548103 A JP2022548103 A JP 2022548103A JP 7699600 B2 JP7699600 B2 JP 7699600B2
Authority
JP
Japan
Prior art keywords
plasma
sidewall
sections
shroud
confinement structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022548103A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023513225A5 (cg-RX-API-DMAC7.html
JP2023513225A (ja
Inventor
ホランド・ジョン
ピオトロフスキー・ステファン・ケー．
キム・ジェウォン
マンキディー・プラティック
匠 柳川
ウー・ドンジュン
ラ レラ・アンソニー デ
ジン・ゼフア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2023513225A publication Critical patent/JP2023513225A/ja
Publication of JP2023513225A5 publication Critical patent/JP2023513225A5/ja
Application granted granted Critical
Publication of JP7699600B2 publication Critical patent/JP7699600B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2022548103A 2020-02-10 2021-02-02 傾斜制御のためのエッジプラズマ密度の調整可能性 Active JP7699600B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062972479P 2020-02-10 2020-02-10
US62/972,479 2020-02-10
PCT/US2021/016267 WO2021162895A1 (en) 2020-02-10 2021-02-02 Tunability of edge plasma density tilt control

Publications (3)

Publication Number Publication Date
JP2023513225A JP2023513225A (ja) 2023-03-30
JP2023513225A5 JP2023513225A5 (cg-RX-API-DMAC7.html) 2023-12-25
JP7699600B2 true JP7699600B2 (ja) 2025-06-27

Family

ID=77291658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022548103A Active JP7699600B2 (ja) 2020-02-10 2021-02-02 傾斜制御のためのエッジプラズマ密度の調整可能性

Country Status (6)

Country Link
US (1) US12505991B2 (cg-RX-API-DMAC7.html)
JP (1) JP7699600B2 (cg-RX-API-DMAC7.html)
KR (1) KR20220137989A (cg-RX-API-DMAC7.html)
CN (1) CN115066738A (cg-RX-API-DMAC7.html)
TW (1) TWI902754B (cg-RX-API-DMAC7.html)
WO (1) WO2021162895A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023055836A1 (en) * 2021-09-29 2023-04-06 Lam Research Corporation Edge capacitively coupled plasma chamber structure
CN116614926A (zh) * 2022-02-09 2023-08-18 中微半导体设备(上海)股份有限公司 等离子体约束系统及方法
WO2025122449A1 (en) * 2023-12-07 2025-06-12 Lam Research Corporation Liner assembly for substrate processing chambers
US12614701B2 (en) 2024-05-15 2026-04-28 Applied Materials, Inc. Substrate processing chamber with plasma confinement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002519863A (ja) 1998-06-30 2002-07-02 ラム リサーチ コーポレーション プラズマ処理のためのエラストマ結合材と、その製造並びに利用方法
JP2010267981A (ja) 1998-12-28 2010-11-25 Lam Res Corp プラズマリアクタにおける穿孔プラズマ閉じ込めリング
JP2012513095A (ja) 2008-12-19 2012-06-07 ラム リサーチ コーポレーション プラズマ処理システムにおけるプラズマ閉じ込め構造
JP2015038987A (ja) 2013-08-07 2015-02-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理装置のためのシリコン含有閉じ込めリングおよびその形成方法
JP2018088339A (ja) 2016-11-29 2018-06-07 株式会社日立ハイテクノロジーズ 真空処理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3458912B2 (ja) 1994-11-15 2003-10-20 アネルバ株式会社 プラズマ処理装置
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6547979B1 (en) * 2000-08-31 2003-04-15 Micron Technology, Inc. Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers
US8608851B2 (en) 2005-10-14 2013-12-17 Advanced Micro-Fabrication Equipment, Inc. Asia Plasma confinement apparatus, and method for confining a plasma
JP5231038B2 (ja) * 2008-02-18 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体
US8360003B2 (en) * 2009-07-13 2013-01-29 Applied Materials, Inc. Plasma reactor with uniform process rate distribution by improved RF ground return path
US8597462B2 (en) * 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
TWI502617B (zh) * 2010-07-21 2015-10-01 應用材料股份有限公司 用於調整電偏斜的方法、電漿處理裝置與襯管組件
US20140053984A1 (en) * 2012-08-27 2014-02-27 Hyun Ho Doh Symmetric return liner for modulating azimuthal non-uniformity in a plasma processing system
KR101670457B1 (ko) * 2014-11-28 2016-10-31 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
US9963782B2 (en) * 2015-02-12 2018-05-08 Asm Ip Holding B.V. Semiconductor manufacturing apparatus
JP6523714B2 (ja) * 2015-03-05 2019-06-05 東京エレクトロン株式会社 プラズマ処理装置
US10763082B2 (en) * 2016-03-04 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber of plasma system, liner for plasma system and method for installing liner to plasma system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002519863A (ja) 1998-06-30 2002-07-02 ラム リサーチ コーポレーション プラズマ処理のためのエラストマ結合材と、その製造並びに利用方法
JP2010267981A (ja) 1998-12-28 2010-11-25 Lam Res Corp プラズマリアクタにおける穿孔プラズマ閉じ込めリング
JP2012513095A (ja) 2008-12-19 2012-06-07 ラム リサーチ コーポレーション プラズマ処理システムにおけるプラズマ閉じ込め構造
JP2015038987A (ja) 2013-08-07 2015-02-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理装置のためのシリコン含有閉じ込めリングおよびその形成方法
JP2018088339A (ja) 2016-11-29 2018-06-07 株式会社日立ハイテクノロジーズ 真空処理装置

Also Published As

Publication number Publication date
US12505991B2 (en) 2025-12-23
WO2021162895A1 (en) 2021-08-19
CN115066738A (zh) 2022-09-16
KR20220137989A (ko) 2022-10-12
US20230063007A1 (en) 2023-03-02
TW202147380A (zh) 2021-12-16
JP2023513225A (ja) 2023-03-30
TWI902754B (zh) 2025-11-01

Similar Documents

Publication Publication Date Title
JP7699600B2 (ja) 傾斜制御のためのエッジプラズマ密度の調整可能性
US11424103B2 (en) Control of on-wafer cd uniformity with movable edge ring and gas injection adjustment
US11651991B2 (en) Electrostatic Chuck design for cooling-gas light-up prevention
US9812294B2 (en) Sub-pulsing during a state
KR102490237B1 (ko) 기울어진 한정 링들을 갖는 플라즈마 프로세싱 시스템들 및 구조체들
KR101888717B1 (ko) 플라즈마 에칭 방법
KR102941229B1 (ko) 에지 링, 탑재대, 기판 처리 장치 및 기판 처리 방법
TW201909331A (zh) 可運動的邊緣環設計
JP2021039924A (ja) プラズマ処理装置、処理方法、上部電極構造
KR20200142587A (ko) 프로세싱 챔버의 세정 프로세스 동안 에지 링 포커싱된 증착
TW202146694A (zh) 具有用於排放晶圓邊緣氣體的流動路徑的排除環
JP2022502867A (ja) ベベルエッチャ用の下側プラズマ排除区域リング
US11373895B2 (en) Etching method and plasma processing apparatus
JP2021103727A (ja) 基板処理方法および基板処理装置
CN112655076B (zh) 载置台和基片处理装置
US20250239438A1 (en) Multi-layer focus ring for plasma semiconductor processing
CN217387074U (zh) 用于衬底处理系统中增强屏蔽的宽覆盖边缘环
US10720328B2 (en) Etching method and etching apparatus
JP2021176186A (ja) 載置台アセンブリ、基板処理装置および基板処理方法
KR102931166B1 (ko) 기판 처리 방법 및 기판 처리 장치
US20250357136A1 (en) Etching method and plasma processing apparatus
US20230260798A1 (en) Chemistry for high aspect ratio etch for 3d-nand
KR20200122208A (ko) 포커스 링을 포함하는 용량성 결합 플라즈마 기판 처리 장치 및 이를 이용한 기판 처리 방법
KR20250126086A (ko) 기판 노치 근방의 플라즈마 증착 또는 에칭을 제어하기 위한 하부 플라즈마 배제 구역 (plasma exclusion zone) 링

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231215

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20231215

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240827

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20240830

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20241107

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20250123

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250207

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250520

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250617

R150 Certificate of patent or registration of utility model

Ref document number: 7699600

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150