TWI902754B - 用於傾斜控制的邊緣電漿密度之可調諧性 - Google Patents

用於傾斜控制的邊緣電漿密度之可調諧性

Info

Publication number
TWI902754B
TWI902754B TW110104668A TW110104668A TWI902754B TW I902754 B TWI902754 B TW I902754B TW 110104668 A TW110104668 A TW 110104668A TW 110104668 A TW110104668 A TW 110104668A TW I902754 B TWI902754 B TW I902754B
Authority
TW
Taiwan
Prior art keywords
plasma
sidewall
segments
processing chamber
shaped shield
Prior art date
Application number
TW110104668A
Other languages
English (en)
Chinese (zh)
Other versions
TW202147380A (zh
Inventor
約翰 霍藍德
史蒂芬 Ｋ 彼得羅夫斯基
金載沅
普瑞提克 曼基迪
匠 柳川
吳東駿
爾拉 安東尼 德拉
金澤華
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202147380A publication Critical patent/TW202147380A/zh
Application granted granted Critical
Publication of TWI902754B publication Critical patent/TWI902754B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW110104668A 2020-02-10 2021-02-08 用於傾斜控制的邊緣電漿密度之可調諧性 TWI902754B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062972479P 2020-02-10 2020-02-10
US62/972,479 2020-02-10

Publications (2)

Publication Number Publication Date
TW202147380A TW202147380A (zh) 2021-12-16
TWI902754B true TWI902754B (zh) 2025-11-01

Family

ID=77291658

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110104668A TWI902754B (zh) 2020-02-10 2021-02-08 用於傾斜控制的邊緣電漿密度之可調諧性

Country Status (6)

Country Link
US (1) US12505991B2 (cg-RX-API-DMAC7.html)
JP (1) JP7699600B2 (cg-RX-API-DMAC7.html)
KR (1) KR20220137989A (cg-RX-API-DMAC7.html)
CN (1) CN115066738A (cg-RX-API-DMAC7.html)
TW (1) TWI902754B (cg-RX-API-DMAC7.html)
WO (1) WO2021162895A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023055836A1 (en) * 2021-09-29 2023-04-06 Lam Research Corporation Edge capacitively coupled plasma chamber structure
CN116614926A (zh) * 2022-02-09 2023-08-18 中微半导体设备(上海)股份有限公司 等离子体约束系统及方法
WO2025122449A1 (en) * 2023-12-07 2025-06-12 Lam Research Corporation Liner assembly for substrate processing chambers
US12614701B2 (en) 2024-05-15 2026-04-28 Applied Materials, Inc. Substrate processing chamber with plasma confinement

Citations (6)

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JPH08148472A (ja) * 1994-11-15 1996-06-07 Aneruba Kk プラズマ処理装置
JP2002519863A (ja) * 1998-06-30 2002-07-02 ラム リサーチ コーポレーション プラズマ処理のためのエラストマ結合材と、その製造並びに利用方法
JP2012513095A (ja) * 2008-12-19 2012-06-07 ラム リサーチ コーポレーション プラズマ処理システムにおけるプラズマ閉じ込め構造
JP2015038987A (ja) * 2013-08-07 2015-02-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理装置のためのシリコン含有閉じ込めリングおよびその形成方法
US20150279633A1 (en) * 2010-07-21 2015-10-01 Applied Materials, Inc. Plasma processing apparatus and liner assembly for tuning electrical skews
TW201537614A (zh) * 2010-05-21 2015-10-01 蘭姆研究公司 電漿處理設備用之可動式腔室襯墊電漿侷限隔屏組合

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Publication number Priority date Publication date Assignee Title
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6547979B1 (en) * 2000-08-31 2003-04-15 Micron Technology, Inc. Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers
US8608851B2 (en) 2005-10-14 2013-12-17 Advanced Micro-Fabrication Equipment, Inc. Asia Plasma confinement apparatus, and method for confining a plasma
JP5231038B2 (ja) * 2008-02-18 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体
US8360003B2 (en) * 2009-07-13 2013-01-29 Applied Materials, Inc. Plasma reactor with uniform process rate distribution by improved RF ground return path
US20140053984A1 (en) * 2012-08-27 2014-02-27 Hyun Ho Doh Symmetric return liner for modulating azimuthal non-uniformity in a plasma processing system
KR101670457B1 (ko) * 2014-11-28 2016-10-31 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
US9963782B2 (en) * 2015-02-12 2018-05-08 Asm Ip Holding B.V. Semiconductor manufacturing apparatus
JP6523714B2 (ja) * 2015-03-05 2019-06-05 東京エレクトロン株式会社 プラズマ処理装置
US10763082B2 (en) * 2016-03-04 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber of plasma system, liner for plasma system and method for installing liner to plasma system
JP7017306B2 (ja) * 2016-11-29 2022-02-08 株式会社日立ハイテク 真空処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148472A (ja) * 1994-11-15 1996-06-07 Aneruba Kk プラズマ処理装置
JP2002519863A (ja) * 1998-06-30 2002-07-02 ラム リサーチ コーポレーション プラズマ処理のためのエラストマ結合材と、その製造並びに利用方法
JP2012513095A (ja) * 2008-12-19 2012-06-07 ラム リサーチ コーポレーション プラズマ処理システムにおけるプラズマ閉じ込め構造
TW201537614A (zh) * 2010-05-21 2015-10-01 蘭姆研究公司 電漿處理設備用之可動式腔室襯墊電漿侷限隔屏組合
US20150279633A1 (en) * 2010-07-21 2015-10-01 Applied Materials, Inc. Plasma processing apparatus and liner assembly for tuning electrical skews
JP2015038987A (ja) * 2013-08-07 2015-02-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理装置のためのシリコン含有閉じ込めリングおよびその形成方法

Also Published As

Publication number Publication date
JP7699600B2 (ja) 2025-06-27
US12505991B2 (en) 2025-12-23
WO2021162895A1 (en) 2021-08-19
CN115066738A (zh) 2022-09-16
KR20220137989A (ko) 2022-10-12
US20230063007A1 (en) 2023-03-02
TW202147380A (zh) 2021-12-16
JP2023513225A (ja) 2023-03-30

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