CN1150627C - 一种半导体器件及其制备方法 - Google Patents

一种半导体器件及其制备方法 Download PDF

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Publication number
CN1150627C
CN1150627C CNB961976314A CN96197631A CN1150627C CN 1150627 C CN1150627 C CN 1150627C CN B961976314 A CNB961976314 A CN B961976314A CN 96197631 A CN96197631 A CN 96197631A CN 1150627 C CN1150627 C CN 1150627C
Authority
CN
China
Prior art keywords
gate
field effect
effect transistor
grid
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB961976314A
Other languages
English (en)
Chinese (zh)
Other versions
CN1200197A (zh
Inventor
U
U·施瓦克
W·汉施
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of CN1200197A publication Critical patent/CN1200197A/zh
Application granted granted Critical
Publication of CN1150627C publication Critical patent/CN1150627C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB961976314A 1995-08-25 1996-08-08 一种半导体器件及其制备方法 Expired - Lifetime CN1150627C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/519,669 US5602410A (en) 1995-08-25 1995-08-25 Off-state gate-oxide field reduction in CMOS
US08/519,669 1995-08-25

Publications (2)

Publication Number Publication Date
CN1200197A CN1200197A (zh) 1998-11-25
CN1150627C true CN1150627C (zh) 2004-05-19

Family

ID=24069285

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB961976314A Expired - Lifetime CN1150627C (zh) 1995-08-25 1996-08-08 一种半导体器件及其制备方法

Country Status (8)

Country Link
US (1) US5602410A (enExample)
EP (1) EP0870332B1 (enExample)
JP (1) JP2002509642A (enExample)
KR (1) KR100468070B1 (enExample)
CN (1) CN1150627C (enExample)
DE (1) DE69637697D1 (enExample)
TW (1) TW312840B (enExample)
WO (1) WO1997008755A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0175390B1 (ko) * 1995-07-14 1999-02-18 김광호 다결정 규소 박막 트랜지스터 및 그 제조 방법
US5900664A (en) * 1997-02-11 1999-05-04 Advanced Micro Devices, Inc. Semiconductor device with self-aligned protection diode
US5966605A (en) * 1997-11-07 1999-10-12 Advanced Micro Devices, Inc. Reduction of poly depletion in semiconductor integrated circuits
US5937325A (en) * 1997-11-07 1999-08-10 Advanced Micro Devices, Inc. Formation of low resistivity titanium silicide gates in semiconductor integrated circuits
US6933554B1 (en) 2000-07-11 2005-08-23 Advanced Micro Devices, Inc. Recessed tunnel oxide profile for improved reliability in NAND devices
US6436749B1 (en) 2000-09-08 2002-08-20 International Business Machines Corporation Method for forming mixed high voltage (HV/LV) transistors for CMOS devices using controlled gate depletion
JP2006108251A (ja) * 2004-10-01 2006-04-20 Rohm Co Ltd 半導体装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151635A (en) * 1971-06-16 1979-05-01 Signetics Corporation Method for making a complementary silicon gate MOS structure
JPS5145438B1 (enExample) * 1971-06-25 1976-12-03
US4124933A (en) * 1974-05-21 1978-11-14 U.S. Philips Corporation Methods of manufacturing semiconductor devices
US4047215A (en) * 1975-01-31 1977-09-06 Texas Instruments Incorporated Uniphase charge coupled devices
US4454524A (en) * 1978-03-06 1984-06-12 Ncr Corporation Device having implantation for controlling gate parasitic action
NL8203870A (nl) * 1982-10-06 1984-05-01 Philips Nv Halfgeleiderinrichting.
JPS62160754A (ja) * 1986-01-09 1987-07-16 Nippon Gakki Seizo Kk 集積回路装置の製法
JPS6480070A (en) * 1987-09-21 1989-03-24 Mitsubishi Electric Corp Semiconductor integrated circuit
DE69001772T2 (de) * 1989-03-31 1993-09-09 Toshiba Kawasaki Kk Frequenz- und spannungsveraenderliche leistungskonverter.
US4992840A (en) * 1989-09-21 1991-02-12 Hewlett-Packard Company Carbon doping MOSFET substrate to suppress hit electron trapping
AU638812B2 (en) * 1990-04-16 1993-07-08 Digital Equipment Corporation A method of operating a semiconductor device
JPH0555560A (ja) * 1991-08-23 1993-03-05 Fujitsu Ltd 半導体装置
JPH05267654A (ja) * 1992-03-23 1993-10-15 Nec Corp Ｍｏｓトランジスタ
US5468666A (en) * 1993-04-29 1995-11-21 Texas Instruments Incorporated Using a change in doping of poly gate to permit placing both high voltage and low voltage transistors on the same chip
DE69433949T2 (de) * 1993-12-07 2005-09-08 Infineon Technologies Ag Verfahren zur Herstellung von MOSFETS mit verbesserten Kurz-Kanal Effekten

Also Published As

Publication number Publication date
CN1200197A (zh) 1998-11-25
US5602410A (en) 1997-02-11
JP2002509642A (ja) 2002-03-26
DE69637697D1 (de) 2008-11-13
KR19990044143A (ko) 1999-06-25
WO1997008755A1 (en) 1997-03-06
EP0870332A1 (en) 1998-10-14
EP0870332B1 (en) 2008-10-01
TW312840B (enExample) 1997-08-11
KR100468070B1 (ko) 2005-05-16

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C06 Publication
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Owner name: INFINEON TECHNOLOGIES AG

Free format text: FORMER OWNER: SIEMENS AKTIENGESELLSCHAFT

Effective date: 20130217

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20130217

Address after: German Neubiberg

Patentee after: Infineon Technologies AG

Address before: Munich, Germany

Patentee before: Siemens AG

Effective date of registration: 20130217

Address after: Munich, Germany

Patentee after: QIMONDA AG

Address before: German Neubiberg

Patentee before: Infineon Technologies AG

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20151223

Address after: German Berg, Laura Ibiza

Patentee after: Infineon Technologies AG

Address before: Munich, Germany

Patentee before: QIMONDA AG

CX01 Expiry of patent term

Granted publication date: 20040519

EXPY Termination of patent right or utility model