KR100468070B1 - Cmos오프상태에서게이트산화물의전계가감소된서브미크론mosfet반도체소자및그제조방법 - Google Patents

Cmos오프상태에서게이트산화물의전계가감소된서브미크론mosfet반도체소자및그제조방법 Download PDF

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Publication number
KR100468070B1
KR100468070B1 KR10-1998-0701376A KR19980701376A KR100468070B1 KR 100468070 B1 KR100468070 B1 KR 100468070B1 KR 19980701376 A KR19980701376 A KR 19980701376A KR 100468070 B1 KR100468070 B1 KR 100468070B1
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South Korea
Prior art keywords
gate
mosfet device
mosfet
impurity
doped
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR10-1998-0701376A
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English (en)
Korean (ko)
Other versions
KR19990044143A (ko
Inventor
우도 슈발케
빌프리트 한쉬
Original Assignee
지멘스 악티엔게젤샤프트
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Publication of KR19990044143A publication Critical patent/KR19990044143A/ko
Application granted granted Critical
Publication of KR100468070B1 publication Critical patent/KR100468070B1/ko
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Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR10-1998-0701376A 1995-08-25 1996-08-08 Cmos오프상태에서게이트산화물의전계가감소된서브미크론mosfet반도체소자및그제조방법 Expired - Lifetime KR100468070B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/519,669 US5602410A (en) 1995-08-25 1995-08-25 Off-state gate-oxide field reduction in CMOS
US08/519,669 1995-08-25
US8/519,669 1995-08-25

Publications (2)

Publication Number Publication Date
KR19990044143A KR19990044143A (ko) 1999-06-25
KR100468070B1 true KR100468070B1 (ko) 2005-05-16

Family

ID=24069285

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0701376A Expired - Lifetime KR100468070B1 (ko) 1995-08-25 1996-08-08 Cmos오프상태에서게이트산화물의전계가감소된서브미크론mosfet반도체소자및그제조방법

Country Status (8)

Country Link
US (1) US5602410A (enExample)
EP (1) EP0870332B1 (enExample)
JP (1) JP2002509642A (enExample)
KR (1) KR100468070B1 (enExample)
CN (1) CN1150627C (enExample)
DE (1) DE69637697D1 (enExample)
TW (1) TW312840B (enExample)
WO (1) WO1997008755A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0175390B1 (ko) * 1995-07-14 1999-02-18 김광호 다결정 규소 박막 트랜지스터 및 그 제조 방법
US5900664A (en) * 1997-02-11 1999-05-04 Advanced Micro Devices, Inc. Semiconductor device with self-aligned protection diode
US5966605A (en) * 1997-11-07 1999-10-12 Advanced Micro Devices, Inc. Reduction of poly depletion in semiconductor integrated circuits
US5937325A (en) * 1997-11-07 1999-08-10 Advanced Micro Devices, Inc. Formation of low resistivity titanium silicide gates in semiconductor integrated circuits
US6933554B1 (en) 2000-07-11 2005-08-23 Advanced Micro Devices, Inc. Recessed tunnel oxide profile for improved reliability in NAND devices
US6436749B1 (en) 2000-09-08 2002-08-20 International Business Machines Corporation Method for forming mixed high voltage (HV/LV) transistors for CMOS devices using controlled gate depletion
JP2006108251A (ja) * 2004-10-01 2006-04-20 Rohm Co Ltd 半導体装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151635A (en) * 1971-06-16 1979-05-01 Signetics Corporation Method for making a complementary silicon gate MOS structure
JPS5145438B1 (enExample) * 1971-06-25 1976-12-03
US4124933A (en) * 1974-05-21 1978-11-14 U.S. Philips Corporation Methods of manufacturing semiconductor devices
US4047215A (en) * 1975-01-31 1977-09-06 Texas Instruments Incorporated Uniphase charge coupled devices
US4454524A (en) * 1978-03-06 1984-06-12 Ncr Corporation Device having implantation for controlling gate parasitic action
NL8203870A (nl) * 1982-10-06 1984-05-01 Philips Nv Halfgeleiderinrichting.
JPS62160754A (ja) * 1986-01-09 1987-07-16 Nippon Gakki Seizo Kk 集積回路装置の製法
JPS6480070A (en) * 1987-09-21 1989-03-24 Mitsubishi Electric Corp Semiconductor integrated circuit
DE69001772T2 (de) * 1989-03-31 1993-09-09 Toshiba Kawasaki Kk Frequenz- und spannungsveraenderliche leistungskonverter.
US4992840A (en) * 1989-09-21 1991-02-12 Hewlett-Packard Company Carbon doping MOSFET substrate to suppress hit electron trapping
AU638812B2 (en) * 1990-04-16 1993-07-08 Digital Equipment Corporation A method of operating a semiconductor device
JPH0555560A (ja) * 1991-08-23 1993-03-05 Fujitsu Ltd 半導体装置
JPH05267654A (ja) * 1992-03-23 1993-10-15 Nec Corp Ｍｏｓトランジスタ
US5468666A (en) * 1993-04-29 1995-11-21 Texas Instruments Incorporated Using a change in doping of poly gate to permit placing both high voltage and low voltage transistors on the same chip
DE69433949T2 (de) * 1993-12-07 2005-09-08 Infineon Technologies Ag Verfahren zur Herstellung von MOSFETS mit verbesserten Kurz-Kanal Effekten

Also Published As

Publication number Publication date
CN1200197A (zh) 1998-11-25
US5602410A (en) 1997-02-11
JP2002509642A (ja) 2002-03-26
CN1150627C (zh) 2004-05-19
DE69637697D1 (de) 2008-11-13
KR19990044143A (ko) 1999-06-25
WO1997008755A1 (en) 1997-03-06
EP0870332A1 (en) 1998-10-14
EP0870332B1 (en) 2008-10-01
TW312840B (enExample) 1997-08-11

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