CN1150623C - 半导体电路装置 - Google Patents
半导体电路装置 Download PDFInfo
- Publication number
- CN1150623C CN1150623C CNB998131296A CN99813129A CN1150623C CN 1150623 C CN1150623 C CN 1150623C CN B998131296 A CNB998131296 A CN B998131296A CN 99813129 A CN99813129 A CN 99813129A CN 1150623 C CN1150623 C CN 1150623C
- Authority
- CN
- China
- Prior art keywords
- transistor
- level
- semiconductor
- switching transistor
- inversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 230000004913 activation Effects 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 21
- 239000012190 activator Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 210000002445 nipple Anatomy 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000012423 maintenance Methods 0.000 claims 1
- 238000011144 upstream manufacturing Methods 0.000 abstract 1
- 230000014509 gene expression Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- UXHQLGLGLZKHTC-CUNXSJBXSA-N 4-[(3s,3ar)-3-cyclopentyl-7-(4-hydroxypiperidine-1-carbonyl)-3,3a,4,5-tetrahydropyrazolo[3,4-f]quinolin-2-yl]-2-chlorobenzonitrile Chemical compound C1CC(O)CCN1C(=O)C1=CC=C(C=2[C@@H]([C@H](C3CCCC3)N(N=2)C=2C=C(Cl)C(C#N)=CC=2)CC2)C2=N1 UXHQLGLGLZKHTC-CUNXSJBXSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19841445A DE19841445C2 (de) | 1998-09-10 | 1998-09-10 | Halbleiter-Schaltungsanordnung |
DE19841445.5 | 1998-09-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1325547A CN1325547A (zh) | 2001-12-05 |
CN1150623C true CN1150623C (zh) | 2004-05-19 |
Family
ID=7880537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB998131296A Expired - Fee Related CN1150623C (zh) | 1998-09-10 | 1999-09-07 | 半导体电路装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6480044B2 (zh) |
EP (1) | EP1114461B1 (zh) |
JP (1) | JP3556597B2 (zh) |
KR (1) | KR100415472B1 (zh) |
CN (1) | CN1150623C (zh) |
DE (2) | DE19841445C2 (zh) |
TW (1) | TW492003B (zh) |
WO (1) | WO2000016399A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19844728C1 (de) | 1998-09-29 | 2000-03-30 | Siemens Ag | Decoderelement zur Erzeugung eines Ausgangssignals mit drei unterschiedlichen Potentialen |
US6646950B2 (en) * | 2001-04-30 | 2003-11-11 | Fujitsu Limited | High speed decoder for flash memory |
KR100598094B1 (ko) * | 2003-04-03 | 2006-07-07 | 삼성전자주식회사 | 데이타 전송 시스템 |
ES2871148T3 (es) * | 2010-02-24 | 2021-10-28 | Univ Macquarie | Sistemas y procedimientos de láser raman de diamante de infrarrojo de medio a lejano |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5157281A (en) * | 1991-07-12 | 1992-10-20 | Texas Instruments Incorporated | Level-shifter circuit for integrated circuits |
US5396459A (en) * | 1992-02-24 | 1995-03-07 | Sony Corporation | Single transistor flash electrically programmable memory cell in which a negative voltage is applied to the nonselected word line |
EP0559995B1 (en) * | 1992-03-11 | 1998-09-16 | STMicroelectronics S.r.l. | Decoder circuit capable of transferring positive and negative voltages |
JPH07111084A (ja) * | 1993-10-13 | 1995-04-25 | Oki Micro Design Miyazaki:Kk | 半導体集積回路装置 |
KR0121131B1 (ko) * | 1994-10-13 | 1997-11-10 | 문정환 | 반도체 메모리장치의 구동회로 |
JPH0945004A (ja) * | 1995-07-25 | 1997-02-14 | Ricoh Co Ltd | Cd−rドライブ装置 |
JPH0945094A (ja) * | 1995-07-31 | 1997-02-14 | Nkk Corp | 不揮発性半導体記憶装置 |
US5737267A (en) * | 1996-04-10 | 1998-04-07 | Townsend And Townsend And Crew Llp | Word line driver circuit |
US5900752A (en) * | 1997-01-24 | 1999-05-04 | Cypress Semiconductor Corp. | Circuit and method for deskewing variable supply signal paths |
DE19706537C2 (de) * | 1997-02-19 | 2001-05-10 | Siemens Ag | Halbleiter-Schaltungsanordnung |
DE10002037C1 (de) * | 2000-01-19 | 2001-08-23 | Elmos Semiconductor Ag | Schaltungsanordnung zum Betreiben einer Last über zwei Transistoren |
-
1998
- 1998-09-10 DE DE19841445A patent/DE19841445C2/de not_active Expired - Fee Related
-
1999
- 1999-09-07 JP JP2000570834A patent/JP3556597B2/ja not_active Expired - Fee Related
- 1999-09-07 CN CNB998131296A patent/CN1150623C/zh not_active Expired - Fee Related
- 1999-09-07 EP EP99969181A patent/EP1114461B1/de not_active Expired - Lifetime
- 1999-09-07 DE DE59914101T patent/DE59914101D1/de not_active Expired - Lifetime
- 1999-09-07 WO PCT/DE1999/002831 patent/WO2000016399A1/de active IP Right Grant
- 1999-09-07 KR KR10-2001-7003127A patent/KR100415472B1/ko not_active IP Right Cessation
- 1999-09-08 TW TW088115481A patent/TW492003B/zh not_active IP Right Cessation
-
2001
- 2001-03-12 US US09/804,322 patent/US6480044B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100415472B1 (ko) | 2004-01-31 |
DE59914101D1 (de) | 2007-02-08 |
US6480044B2 (en) | 2002-11-12 |
US20010028090A1 (en) | 2001-10-11 |
WO2000016399A1 (de) | 2000-03-23 |
KR20010075037A (ko) | 2001-08-09 |
JP3556597B2 (ja) | 2004-08-18 |
EP1114461B1 (de) | 2006-12-27 |
CN1325547A (zh) | 2001-12-05 |
DE19841445A1 (de) | 2000-03-16 |
JP2002525852A (ja) | 2002-08-13 |
DE19841445C2 (de) | 2002-04-25 |
EP1114461A1 (de) | 2001-07-11 |
TW492003B (en) | 2002-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
C10 | Entry into substantive examination | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER NAME: INFENNIAN TECHNOLOGIES AG |
|
CP01 | Change in the name or title of a patent holder |
Address after: Munich, Germany Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: INFINEON TECHNOLOGIES AG |
|
TR01 | Transfer of patent right |
Effective date of registration: 20130703 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: Munich, Germany Patentee before: Infineon Technologies AG |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160113 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040519 Termination date: 20160907 |
|
CF01 | Termination of patent right due to non-payment of annual fee |