CN115020356A - 薄型化封装接着结构 - Google Patents
薄型化封装接着结构 Download PDFInfo
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- CN115020356A CN115020356A CN202110550641.4A CN202110550641A CN115020356A CN 115020356 A CN115020356 A CN 115020356A CN 202110550641 A CN202110550641 A CN 202110550641A CN 115020356 A CN115020356 A CN 115020356A
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- sheet
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- Engineering & Computer Science (AREA)
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- Buffer Packaging (AREA)
Abstract
本发明是一种薄型化封装接着结构，其包括：一第一薄片部，该第一薄片部具有两面，其中一面为局部或全部与接着部相邻接合；一接着部，该接着部位于第一薄片部与第二薄片部之间，其接着部为至少一环氧树脂、硅树脂、聚酯、聚氨酯、奈米硅及奈米钛的接着剂，且该接着部的厚度范围为0.5~100微米；及一第二薄片部，该第二薄片部具有两面，其中一面为局部或全部与接着部相邻接合；该第一薄片部、接着部及一第二薄片部组合成薄型化封装接着结构，该薄型化封装接着结构厚度小于等于200微米。
Description
技术领域
本发明涉及用于电子元件的均热及散热的薄片结构。
背景技术
目前薄型化均热板被视为5G高传输晶片的最佳散热方案。传统薄型化均热板是利用内部两相蒸发和冷凝的现象，来将其晶片的热量被动传递到整个均热板平面上。传统薄型化均热板为了可以广泛使用在5G电子设备上，仍待解决制造成本和量产性的问题。目前薄型化均热板的接合技术，包括扩散接合、激光焊接和共晶接合，但这些接合技术对于超薄均热板造成制造工艺复杂化、低生产效率和高制造成本的限制性。
现有技术针对一种无注入管的可携式电子装置用薄膜均热板及其制造方法研究，如中国台湾专利号TW108140361所公开，其结构包括：下部板，上表面形成有多个凸起部，在一侧的上表面形成有以预定间隔隔开并凸出的多个第一凸起，且形成有从外侧边缘以预定间隔朝内侧向上沿着边缘形状凸出形成的第一接合体；及上部板，凸出形成有接合于下部板的上侧的第二接合体，且以对应于第一凸起的方式凸出形成有第二凸起，用于向内部注入工作流体的注入口形成在第二凸起的内侧，当下部板弯曲并接触于注入口时，以密封注入口的方式向下侧方向凸出形成有段差；其中，通过真空注入体，使以紧贴结合于上部板的注入口的方式实现接合状态的上部板与下部板之间形成的内部空间处于真空状态，并且将工作流体注入到内部空间。
现有技术针对一种智慧型手机一体型均热板研究，如中国台湾专利号TW108140413所公开，一种如下的智慧型手机一体型均热板，其能够与智慧型手机框架一体地制成而不会改变厚度，在智慧型手机框架形成安装部，而将均热板对应安装在上述安装部，为了轻易实现相互之间的紧固，在安装部和均热板的外缘形成短凸缘，且在短凸缘进一步形成孔和凸起，从而增加紧固力，并且智慧型手机一体型均热板还可以适用于在智慧型手机框架一体地结合均热板的结构及智慧型手机本身形成有均热板的结构。
现有技术针对散热装置研究，如中国台湾专利公告号TW108147553所公开，该散热装置对被搭载于狭窄化的空间的高发热量的发热体也可发挥优异的冷却特性。散热装置包括：多个支热管，与发热体以热性连接；及散热部，与多支该热管以热性连接；该散热装置：多支该热管中至少与该发热体以热性连接的蒸发部具有多支该热管的对热输送方向正交的方向的截面形状是扁平的扁平部，并将该扁平部中厚度方向的面配置成与该发热体相对向。
发明内容
本发明是一种薄型化封装接着结构，其包括：一第一薄片部、一接着部及一第二薄片部，该第一薄片部具有两面，其中一面的局部或全部与接着部相邻接合；该接着部位于第一薄片部与第二薄片部的间，其接着部为环氧树脂、硅树脂、聚酯、聚氨酯、奈米硅及奈米钛中至少一种的接着剂，且该接着部的厚度范围为0.5~100微米；该第二薄片部具有两面，其中一面的局部或全部与接着部相邻接合；该第一薄片部、接着部及一第二薄片部组合成薄型化封装接着结构，该薄型化封装接着结构厚度小于等于200微米。其中，该第一薄片部为铝、铜、镍、金、银、硅、陶瓷、环氧树脂、聚酰亚胺或塑胶。该接着部接合第一薄片部及第二薄片部的90度剥离强度≧4 N/cm。该接着部接合第一薄片部及第二薄片部的180度剥离强度≧2 N/cm。其中，该第二薄片部为铝、铜、镍、金、银、硅、陶瓷、环氧树脂、聚酰亚胺或塑胶。至少一第一薄片部和第二薄片部内有一容置空间。该容置空间填满凝胶、蜡、热熔材料和导热材料中的至少一种，该导热材料内含氧化铝、氮化铝、氮化硼、碳化硅、碳黑粉、石墨粉、石墨烯粉、奈米碳管、奈米钻石粉和陶瓷粉中的至少一种。该容置空间容置电子晶片元件，且包覆该电子晶片件。更进一步，该薄型化封装接着结构的至少一第一薄片部及第二薄片部的外侧面覆盖有至少一第一功能层，该第一功能层的厚度小于200微米，且相邻的其第一功能层的下表面贴合于第一薄片部的上表面，该第一功能层为陶瓷材料、石墨烯材料或接着剂，其接着剂为环氧树脂、硅树脂、聚酯、聚氨酯、奈米硅及奈米钛中的至少一种；及至少一第二功能层，该第二功能层的厚度小于200微米，且相邻的其第二功能层的下表面贴合于第一功能层的上表面，该第二功能层为陶瓷材料、石墨烯材料、接着剂、聚酰亚胺、聚酰胺、聚酯、聚丙烯、聚氨脂、铜、铝、胶合材料或金属导电材料，其接着剂为环氧树脂、硅树脂、聚酯、聚氨酯、奈米硅及奈米钛中的至少一种。更进一步，该薄型化封装接着结构的至少一第一薄片部及第二薄片部的外侧面覆盖有一散热涂层，该散热涂层为石墨烯、石墨片和陶瓷中的至少一种。
本发明的有益效果为：
本发明具更进一步薄型化封装接着结构的规格，该薄型化封装接着结构厚度小于等于200微米，其薄化结构有别于现有技艺，提供电子设备更微小的空间限制内的散热解决方案，其新颖、进步及实用效益无误。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细的说明。
图1为本发明薄型化封装接着结构剖面图；
图2为本发明薄型化封装接着结构另一实施例剖面图；
图3为本发明薄型化封装接着结构贴合第一功能层及第二功能层的剖面图；
图4为本发明薄型化封装接着结构外层设置散热涂层的剖面图。
附图标记说明
101、第一薄片部
201、接着部
301、第二薄片部
401、容置空间
501、第一功能层
502、第二功能层
601、散热涂层。
具体实施方式
以下通过特定的具体实施例说明本发明的实施方式，本领域技术人员可由本说明书所公开的内容轻易地了解本发明的其他优点与功效。本发明也可通过其他不同的具体实施例加以施行或应用，本说明书中的各项细节也可基于不同观点与应用，在不悖离本发明的精神下进行各种修饰与变更。
首先图1为显示本发明薄型化封装接着结构剖面图，说明本发明是一种薄型化封装接着结构，其包括：一第一薄片部101、一接着部201及一第二薄片部301，该第一薄片部101具有两面，其中一面的局部或全部与接着部201相邻接合；该接着部201位于第一薄片部101与第二薄片部301之间，其接着部201为包括环氧树脂(epoxy resin)、硅树脂(siliconeresin)、聚酯(polyester)、聚氨酯(polyurethane)、奈米硅(nano silicate)及奈米钛(nano titanium)中至少一种的接着剂，且该接着部201的厚度范围为0.5~100微米；该第二薄片部301具有两面，其中一面的局部或全部与接着部201相邻接合；其环氧树脂为结构上具有环氧基的树脂，如双酚A型环氧树脂是最常用的环氧树脂，通过固化反应，环氧树脂可以形成三维交联高分子网络结构。其硅树脂是具有高度交联结构的热固性聚硅氧烷高分子，该聚硅氧烷高分子是由有机氯硅烷通过水解缩合及重排，制成室温下稳定的活性硅氧烷预聚物，再进一步加热即可缩和交联成较硬或弹性较小的固体硅树脂。其硅树脂有很好的电绝缘性质、耐温及防水的效果。其聚酯是在其主链上含有酯基(COO)官能团的高分子，如聚对苯二甲酸乙二酯。其聚氨酯是指主链中含有氨基甲酸酯官能基高分子。其奈米硅及奈米钛则是上述高分子的混合物，其可以增加粘着强度。该第一薄片部101、接着部201及一第二薄片部301组合成薄型化封装接着结构，该薄型化封装接着结构厚度小于等于200微米。对于薄型化均热板(Vapor Chamber，VC)的应用，其至少一第一薄片部101和第二薄片部301内有一容置空间401，该容置空间401填满凝胶(gel)、蜡(wax)、热熔材料(hot-meltmaterial)和导热材料中的至少一种，该导热材料内含氧化铝、氮化铝、氮化硼、碳化硅、碳黑粉、石墨粉、石墨烯粉、奈米碳管、奈米钻石粉和陶瓷粉中的至少一种，其填满该材料可提供均热与散热的功能，有别于传统薄型化均热板导入未填满的散热液体，本发明没有液体的注入，可解决传统薄型化均热板的液体散逸的缺陷。凝胶是一种固体的、类似果冻的材料，凝胶是一种充分稀释的交联系统，在稳定状态下没有流动性。以重量计算，凝胶的主要成分是液体，但由于液体中的三维交联网络，凝胶在很多方面有着与固体相近的特性。蜡是有长烷链的有机化合物，蜡是脂肪酸以及长链的醇所形成的酯类，或者长链碳氢化合物。热熔材料相变材料(PCM,Phase Change Material)是指随温度变化而改变形态并能提供潜热的物质，该材料由固态变为液态或由液态变为固态的过程称为相变过程。另外，电子封装应用方面，该容置空间401也可容置电子晶片元件，且包覆该电子晶片件。其中，该第一薄片部101为铝、铜、镍、金、银、硅、陶瓷、环氧树脂、聚酰亚胺(polyimide)或塑胶。该接着部201接合第一薄片部101及第二薄片部301的90度剥离强度≧4 N/cm。该接着部201接合第一薄片部101及第二薄片部301的180度剥离强度≧2 N/cm。其中，该第二薄片部301为铝、铜、镍、金、银、硅、陶瓷、环氧树脂、聚酰亚胺或塑胶。其聚酰亚胺依据官能基团分为脂肪族、半芳香族和芳香族聚酰亚胺，又根据热性质，可分为热塑性和热固性聚酰亚胺。聚酰亚胺是一种含有酰亚胺基的有机高分子材料，其制备方式主要是由双胺类及双酣类反应聚合成聚酰胺酸高分子，之后经过高温环化(Imidization)形成聚酰亚胺高分子。
图2显示本发明薄型化封装接着结构另一实施例的剖面图。说明本发明是一种薄型化封装接着结构，其包括：一第一薄片部101、一接着部201及一第二薄片部301，该第一薄片部101具有两面，其中一面的局部或全部与接着部201相邻接合；该接着部201位于第一薄片部101与第二薄片部301之间，其接着部201为包括环氧树脂、硅树脂、聚酯、聚氨酯、奈米硅及奈米钛中的至少一种的接着剂，且该接着部201的厚度范围为0.5~100微米；该第二薄片部301具有两面，其中一面为局部或全部与接着部201相邻接合；该第一薄片部101、接着部201及一第二薄片部301组合成薄型化封装接着结构，该薄型化封装接着结构厚度小于等于200微米。其中，该第一薄片部101为铝、铜、镍、金、银、硅、陶瓷、环氧树脂、聚酰亚胺或塑胶。该接着部201接合第一薄片部101及第二薄片部301的90度剥离强度≧4 N/cm。该接着部201接合第一薄片部101及第二薄片部301的180度剥离强度≧2 N/cm。其中，该第二薄片部301为铝、铜、镍、金、银、硅、陶瓷、环氧树脂、聚酰亚胺或塑胶。
为更进一步了解本发明实际应用情境，举例结合散热导电软板的应用领域，如图3显示本发明薄型化封装接着结构贴合第一功能层501及第二功能层502的剖面图，举例如图1的薄型化封装接着结构，更进一步，该薄型化封装接着结构的至少一第一薄片部101及第二薄片部301的外侧面覆盖有至少一第一功能层501，该第一功能层501的厚度小于200微米，且相邻的其第一功能层501的下表面贴合于第一薄片部101的上表面，该第一功能层501为陶瓷材料、石墨烯材料或接着剂，其接着剂为环氧树脂、硅树脂、聚酯、聚氨酯、奈米硅及奈米钛中的至少一种；及至少一第二功能层502，该第二功能层502的厚度小于200微米，且相邻的其第二功能层502的下表面贴合于第一功能层501的上表面，该第二功能层502为陶瓷材料、石墨烯材料、接着剂、聚酰亚胺、聚酰胺(polyamide)、聚酯、聚丙烯(polypropylene)、聚氨脂、铜、铝、胶合材料或金属导电材料，其接着剂为环氧树脂、硅树脂、聚酯、聚氨酯、奈米硅及奈米钛中的至少一种。图3中说明第一薄片部101外侧面覆盖有一层第一功能层501及依序叠合三层第二功能层502，达到单面导热作用的效果。聚酰胺是由含有羧基和氨基的单体通过酰胺键聚合成的高分子。聚丙烯的重复单元为由三个碳原子组成，其中两个碳原子在主链上，一个碳原子以支链的形式存在的高分子材料。
图4显示本发明薄型化封装接着结构外层设置散热涂层的剖面图，举例如图1的薄型化封装接着结构，更进一步，该薄型化封装接着结构的至少一第一薄片部101及第二薄片部301的外侧面覆盖有一散热涂层601，该散热涂层601为石墨烯、石墨片和陶瓷中的至少一种。其薄型化封装接着结构表面经喷涂、含浸或涂布方式，将至少一石墨烯、石墨片和陶瓷设置于薄型化封装接着结构表面，提供辐射散热与均热的功能，更提升热源散逸的效果。图4中说明第二薄片部301外侧面覆盖有一散热涂层601，可节省散热涂层601使用量，达到单面散热的效果，增加第二薄片部301的散热面积及辐射散热特性。
综观上述实施例的结构与特征，本发明是一种薄型化封装接着结构，其包括：一第一薄片部101、一接着部201及一第二薄片部301，该第一薄片部101具有两面，其中一面为局部或全部与接着部201相邻接合；该接着部201位于第一薄片部101与第二薄片部301之间，其接着部201为包括环氧树脂、硅树脂、聚酯、聚氨酯、奈米硅及奈米钛中的至少一种的接着剂，且该接着部201的厚度范围为0.5~100微米；该第二薄片部301具有两面，其中一面为局部或全部与接着部201相邻接合；该第一薄片部101、接着部201及一第二薄片部301组合成薄型化封装接着结构，该薄型化封装接着结构厚度小于等于200微米。其中，该第一薄片部101为铝、铜、镍、金、银、硅、陶瓷、环氧树脂、聚酰亚胺或塑胶。该接着部201接合第一薄片部101及第二薄片部301的90度剥离强度≧4 N/cm。该接着部201接合第一薄片部101及第二薄片部301的180度剥离强度≧2 N/cm。其中，该第二薄片部301为铝、铜、镍、金、银、硅、陶瓷、环氧树脂、聚酰亚胺或塑胶。至少一第一薄片部101和第二薄片部301内有一容置空间401。该容置空间401填满凝胶、蜡、热熔材料和导热材料中的至少一种，该导热材料内含氧化铝、氮化铝、氮化硼、碳化硅、碳黑粉、石墨粉、石墨烯粉、奈米碳管、奈米钻石粉和陶瓷粉中的至少一种。该容置空间401容置电子晶片元件，且包覆该电子晶片件。其中，该电子晶片元件与接着部201接合，且该接着部201至少接合一第一薄片部101与第二薄片部301。更进一步，该薄型化封装接着结构的至少一第一薄片部101及第二薄片部301的外侧面覆盖有至少一第一功能层501，该第一功能层501的厚度小于200微米，且相邻的其第一功能层501的下表面贴合于第一薄片部101的上表面，该第一功能层501为陶瓷材料、石墨烯材料或接着剂，其接着剂为环氧树脂、硅树脂、聚酯、聚氨酯、奈米硅及奈米钛中的至少一种；及至少一第二功能层502，该第二功能层502的厚度小于200微米，且相邻的其第二功能层502的下表面贴合于第一功能层501的上表面，该第二功能层502为陶瓷材料、石墨烯材料、接着剂、聚酰亚胺、聚酰胺、聚酯、聚丙烯、聚氨脂、铜、铝、胶合材料或金属导电材料，其接着剂为环氧树脂、硅树脂、聚酯、聚氨酯、奈米硅及奈米钛中的至少一种。更进一步，该薄型化封装接着结构的至少一第一薄片部101及第二薄片部301的外侧面覆盖有一散热涂层601，该散热涂层601为石墨烯、石墨片和陶瓷中的至少一种。本发明薄型化封装接着结构特征，其薄型化封装接着结构厚度小于等于200微米，其薄化结构有别于现有技艺，提供电子设备更微小的空间限制内的散热解决方案，其新颖、进步及实用效益无误。故可有效改进现有不足，使用上有相当大的实用性。
以上说明内容仅为本发明较佳实施例，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
Claims (10)
1.一种薄型化封装接着结构，其包括：
一第一薄片部，该第一薄片部具有两面；
一第二薄片部，该第二薄片部具有两面；及
一接着部，该接着部位于第一薄片部与第二薄片部之间，且该第一薄片部的其中一面的局部或全部与接着部相邻接合，该第二薄片部的其中一面的局部或全部与接着部相邻接合，其接着部为包括环氧树脂、硅树脂、聚酯、聚氨酯、奈米硅及奈米钛中至少一种的接着剂，且该接着部的厚度范围为0.5~100微米；
其特征在于，该第一薄片部、接着部及一第二薄片部组合成薄型化封装接着结构，该薄型化封装接着结构厚度小于等于200微米。
2.如权利要求1所述的薄型化封装接着结构，其特征在于，该第一薄片部为铝、铜、镍、金、银、硅、陶瓷、环氧树脂、聚酰亚胺或塑胶。
3.如权利要求1所述的薄型化封装接着结构，其特征在于，该接着部为硅、钛、环氧树脂及硅胶材料中的至少一种，该材料接合第一薄片部及第二薄片部的90度剥离强度≧4 N/cm。
4.如权利要求1所述的薄型化封装接着结构，其特征在于，该接着部为硅、钛、环氧树脂及硅胶材料中的至少一种，该材料接合第一薄片部及第二薄片部的180度剥离强度≧2 N/cm。
5.如权利要求1所述的薄型化封装接着结构，其特征在于，该第二薄片部为铝、铜、镍、金、银、硅、陶瓷、环氧树脂、聚酰亚胺或塑胶。
6.如权利要求1所述的薄型化封装接着结构，其特征在于，至少一第一薄片部和第二薄片部内有一容置空间。
7.如权利要求6所述的薄型化封装接着结构，其特征在于，该容置空间填满凝胶、蜡、热熔材料和导热材料中的至少一种，该导热材料内含氧化铝、氮化铝、氮化硼、碳化硅、碳黑粉、石墨粉、石墨烯粉、奈米碳管、奈米钻石粉和陶瓷粉中的至少一种。
8.如权利要求6所述的薄型化封装接着结构，其特征在于，该容置空间容置电子晶片元件，且包覆该电子晶片件。
9.如权利要求1所述的薄型化封装接着结构，其特征在于，该薄型化封装接着结构的至少一第一薄片部及第二薄片部的外侧面覆盖有至少一第一功能层，该第一功能层的厚度小于200微米，且相邻的其第一功能层的下表面贴合于第一薄片部的上表面，该第一功能层为陶瓷材料、石墨烯材料或接着剂，其接着剂为环氧树脂、硅树脂、聚酯、聚氨酯、奈米硅及奈米钛中的至少一种；及至少一第二功能层，该第二功能层的厚度小于200微米，且相邻的其第二功能层的下表面贴合于第一功能层的上表面，该第二功能层为陶瓷材料、石墨烯材料、接着剂、聚酰亚胺、聚酰胺、聚酯、聚丙烯、聚氨脂、铜、铝、胶合材料或金属导电材料，其接着剂为环氧树脂、硅树脂、聚酯、聚氨酯、奈米硅及奈米钛中的至少一种。
10.如权利要求1所述的薄型化封装接着结构，其特征在于，该薄型化封装接着结构至少一第一薄片部及第二薄片部的外侧面覆盖有一散热涂层，该散热涂层为石墨烯、石墨片和陶瓷中的至少一种。
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| TWI242584B (en) * | 2001-07-03 | 2005-11-01 | Lord Corp | High thermal conductivity spin castable potting compound |
| JP2007150013A (ja) | 2005-11-29 | 2007-06-14 | Matsushita Electric Ind Co Ltd | シート状ヒートパイプおよび電子機器冷却構造体 |
| US8508036B2 (en) * | 2007-05-11 | 2013-08-13 | Tessera, Inc. | Ultra-thin near-hermetic package based on rainier |
| CN101939396B (zh) * | 2007-09-19 | 2012-11-21 | 东丽株式会社 | 电子部件用粘合剂组合物及使用其的电子部件用粘合剂片材 |
| US20100294461A1 (en) | 2009-05-22 | 2010-11-25 | General Electric Company | Enclosure for heat transfer devices, methods of manufacture thereof and articles comprising the same |
| JP2016012619A (ja) | 2014-06-27 | 2016-01-21 | 大日本印刷株式会社 | 放熱構造体及び放熱構造体を備える太陽電池モジュール |
| TWI529364B (zh) | 2014-07-22 | 2016-04-11 | Ultra - thin temperature plate and its manufacturing method | |
| JP5788069B1 (ja) | 2014-08-29 | 2015-09-30 | 古河電気工業株式会社 | 平面型ヒートパイプ |
| WO2016151916A1 (ja) | 2015-03-26 | 2016-09-29 | 株式会社村田製作所 | シート型ヒートパイプ |
| JP6705456B2 (ja) * | 2015-08-19 | 2020-06-03 | 東洋紡株式会社 | 低誘電接着剤組成物 |
| DE102015219791A1 (de) | 2015-10-13 | 2017-04-13 | Siemens Aktiengesellschaft | Halbleitermodul, Stromrichter und Fahrzeug |
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| US11209216B2 (en) | 2017-07-28 | 2021-12-28 | Dana Canada Corporation | Ultra thin heat exchangers for thermal management |
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| TWI632843B (zh) | 2017-12-01 | 2018-08-11 | 微星科技股份有限公司 | 人臉及身分辨識機 |
| US20190249940A1 (en) * | 2018-02-10 | 2019-08-15 | Shan-Teng QUE | Heat dissipation plate and manufacturing method thereof |
| TW202344791A (zh) | 2018-05-30 | 2023-11-16 | 日商大日本印刷股份有限公司 | 蒸氣腔及電子機器 |
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| JP6831416B2 (ja) | 2019-03-28 | 2021-02-17 | Ｄｏｗａエレクトロニクス株式会社 | 接合材及び接合方法 |
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| TWM615078U (zh) | 2021-03-04 | 2021-08-01 | 宸寰科技有限公司 | 薄型化封裝接著結構 |
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