CN1148732A - 表面装式半导体装置，半导体装配部件以及它们的制造方法 - Google Patents

表面装式半导体装置，半导体装配部件以及它们的制造方法 Download PDF

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Publication number
CN1148732A
CN1148732A CN96107937A CN96107937A CN1148732A CN 1148732 A CN1148732 A CN 1148732A CN 96107937 A CN96107937 A CN 96107937A CN 96107937 A CN96107937 A CN 96107937A CN 1148732 A CN1148732 A CN 1148732A
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assembly surface
mentioned
metal
semiconductor device
type semiconductor
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CN96107937A
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下田浩
冈岛敏浩
黑川博志
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN1148732A publication Critical patent/CN1148732A/zh
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Abstract

提供一种利用金属碳酸盐膜，把外部引线等容易牢固地焊接到电路基板上的表面装式半导体装置、一种大幅度提高了装配面的焊锡浸润性和热压焊性半导体装配部件及一种在这些装置及部件的装置表面上形成金属碳酸盐膜的方法，表面装式半导体装置，在焊接装配外部引线等的面上形成金属碳酸盐膜。而半导体装配部件在用焊接或热压焊等装配半导体芯片等的面上形成金属碳酸盐膜。另外，使表面装式半导体装置或半导体装配部件的装配表面与含碳溶液接触，在其上形成金属碳酸盐膜。

Description

表面装式半导体装置，半导体 装配部件以及它们的制造方法
本发明涉及表面装式半导体装置和半导体装配部件以及它们的制造方法，这些装置和部件的装配表面的焊锡浸润性或者热压焊性都可以大幅度地提高，特别是涉及在装配表面上已设有覆膜的表面装式半导体装置或者半导体装配部件以及向它们的装配面上形成覆膜的方法。
受到近来显著进步的半导体微细加技术的支持，半导体装置的大容量化，高功能化，高集成等等的进展非常惊人。与此同时，半导体装置不仅器件尺寸大形化。端子数目也变得极其之多了。因此，外部管腿也势必要变为多管脚、窄步距。最近，已出现了外部管腿的步距0.5mm，间隔0.35mm的半导体装置，且趋势是还要更窄小化。对于这样的表面装式半导体装置，引线框架，TAB带或电路基板之类的半导体装置，越来越要求通过改善装配表面的焊接性或热压焊性所得到的可靠性高的装配技术。
通常，一般的半导体装置的装配阶段分两个。第一装配阶段是先把IC芯片装到引线框架的岛上(芯焊)并进行电连(丝焊)，然后密封树脂的阶段。图6到图9是用于说明这一阶段的现有方法的附图。
图6(a)和图6(b)示出了引线框架，图6(a)是其平面图，图6(b)是从图6(a)的A-A方面看该引线框架的断面图。图中，1是引线框架，2是内部引线，3是岛，4a，4b是由银、金、铜等构成的金属镀层，比如镀银层。图7示出了用于现有的引线框架上形成上述银镀层4a，4b的处理装置。处理装置40由镀银槽41，绝水槽42和超纯水槽43构成。在引线框架1的表面上，用镀银槽41形成镀银层4a，4b。接着，用纯水槽42和超纯水槽43清洗之后，用干燥装置(未画出)进行干燥。
图8示出第1装配状况。在上述岛3的镀银层4b的上边，把已在背面上形成金属化层7的IC芯片5，用焊接材料(Pb-Sn系焊锡)8焊上，把用金制成的连接细丝9的一头，球焊到IC芯片5的电极6上，另一头的接合(stich)部分10被热压焊到内部引线2的镀银层4a的上边。之后，用密封树脂11把这些内部引线2，岛3、IC芯片5，连接细丝9密封起来，再经过在图9中将要讲的外部管腿12的弯曲加工，在外部管腿12的表面上形成由Pb/Sn，Sn等等构成的金属镀层13等其他一些工序，作为IC14被加工成了产品。如上所述，现有技术的作法是在内部引线2和岛3的装配表面上形成镀银层4a，4b，企图用这种办法求得IC芯片5的焊接的稳定化和连接细丝9的脊背部分的热压焊性的稳定化。
其次，第2装配阶段是把IC14装配到电路基板上去的阶段。图9示出了把IC装配到电路基板上去的状况。在图7，20是电路基板，该电路基板20由已形成于基板21的金属布线22，在其边缘部分上镀银后设置的基板电极23，设置为把金属布线22和基板21的表面覆盖起来的绝缘膜24构成。这样一来，如要在电路基板20上边装配IC14，则要先在基板电极23上边事先印刷好通常厚度为200-400μm的膏状焊锡糊15，接着在其位置上装配上IC14的外部管腿12，之后，用红外线加热等等，加热熔融焊锡糊24，使之固化后工作就完成了。
但是，在上述这种现有的在装配构件的表面上形成镀银层4a，4b或金属镀层13或基板电极23等等，并在抑制因装配表面的氧化而产生的浸润性降低的同时进行装配的方法中，维持装配表面的活性化是困难的，难于得到足够的焊锡浸润性和热压焊性。为此，存在着对形成金镀层之后的清洗水的水质管理，对半导体装置、引线框架、电路基板等等完成后的捆包保管管理，对装配时的部件品质的不均一所伴生的装配条件的管理等，要求极其严格的品质管理的问题。
此外，在得不到足够的焊锡浸润性的情况下，在把具有窄步距，多管脚化的外部管腿的IC装配到电路基板上去的时候，存在着已熔融的焊锡糊吐出到焊接面的外边，使狭窄的端于之间搭成桥这样的问题。此外还存在着由于焊锡糊中含有活性剂(助焊剂)，而这些助焊剂含有高浓度的氯以改善其焊接性。故从为了防止金属腐蚀的观点来看。在装配结束之后为了除掉助焊剂必须进行充分地清洗，因此存在增加了清洗成本的问题。
企图解决这种问题的现有技术有许多，下边我们举出几个。在特开平1-14634号公报中，有为了不对周围造成污染地提高焊接性，在Ni-P合金的引线框架上边形成0.3％至2％的氯浓缩层的论述。在特开平5-304235号公报上有为抑制在大气中的氧化提高焊锡浸润性，在引线框架的镀Ni表面上，用浓度5-20重量％的氧性氟化铵液体处理以形成氧化膜(NiO2)的论述。在特开平6-34998号公报中，有使Cu系引线框架表面与含有银氰化钾和亲水性有机物的水接触以形成表面被膜W，使得改善焊锡浸润性不用助焊剂即可焊接的论述。在特开平5-190726号公报中，有为了防止表面变色和改善丝焊性。在引线框架的镀银表面上用阳极氧化处理形成氧化银的论述。在特开昭56-98849号公报中，有把引线框架清洗之后形成防氧化膜，使得不用助焊剂就可得到良好的焊接的论述。在特开昭59-141237号公报中，有在清洗过引线框架的芯焊部分表面之后形成络合物盐层以防止焊盘表面氧化污染，使之可以进行良好的芯片焊接的论述。
这些现有技术虽然各自在某一方面具有良好的特征，但是存在着或者是各种膜的形成工序很难，或者是从防止腐蚀的观点看装配完成之后为了除去助焊剂必须进行充分地清洗、于是有造价相应提高的问题。另外，人们还希望焊接或热压焊所产生的装配所需要的时间应进一步缩短。
本发明就是着眼于以上那样的现有的各种问题而搞成的，目的是提供一种可以容易且确实地把外部引线等等，用焊接或热压焊等装到电路基板上去的半导体装置。此外，本发明的另一目的是提供一种可以大幅度地提高装配面的焊锡浸润性或热压焊性的半导体装配部件。此外还有，本发明的再一个目的是提供一种半导体装置的制造方法，这种方法可以改善表面装式半导体装置或者半导体装配部件的装配表面的焊锡浸润性或热压焊性。
本发明的表面装式半导体装置，在为用焊接等方法装配外部引线等等的装配表面上形成有金属碳酸盐膜。
此外，在装配表面上还形成了金属镀层，在该金属镀层上形成金属碳酸盐膜。
本发明的半导体装配部件，在引线框架、TAB带，电路基板等的半导体装配部件中，连用焊接或热压焊装配半导体芯片的电极或外部管腿的装配表面上形成有金属碳酸盐膜。
也可以先在装配表面上形成金属镀层，再在金属度层上形成金属碳酸盐膜。
倘采用本发明的制造方法，则具备有准备具有装配表面的表面装式半导体装置或半导体装配部件的工序和，使装配表面与含碳溶液接触，以在装配表面上形成金属碳酸盐膜的工序。溶液可以是含有具有氯、氟、氨、硝酸离子、界面活性剂等等的活性作用的成分的溶液，而使装配表面与溶液接触的工序，可以含有把装配表面浸于溶液中去的工序。
若采用另外的制造方法，则备有：准备具有装配表面的表面装式半导体装置和半导体装配部件的工序；至少在装配表面上边形成金属镀层的工序；使金属镀层与含碳的溶液接触，形成金属碳酸盐膜的工序。
形成金属镀层的工序，可以包括把装配表面放入金属镀膜处理槽中去的工序。形成金属碳酸盐膜的工序也可以包含放进含有具有氯、氟、氨、硝酸离子、界面活性剂等活性作用的成分的溶液中去的工序。
此外，若采用本发明，则可得到在外部管腿等等的装配表面上形成含有铅的镀锡层，在该镀锡层上形成至少含有10％的铅氧化物的氧化物膜而构成的表面装式半导体装置。
若采用本发明，则可以得到在引线框架TAB带，电路基板等等的半导体装配部件中。在可用焊接法装配半导体芯片的电极和外部管腿等等的装配表面上形成含有铅的镀锡层，在该镀锡层上形成至少含有10％的铅氧化物的氧化物膜而构成的半导体装配部件。
再有，若采用本发明，则可以得到表面装式半导体装置或半导体装配部件的制造方法。上述方法具备有，准备具有已形成了含铅镀锡层的装配表面的表面装式半导体装置或半导体装配部件的工序；使装配表面与含碳溶液接触，在装配表面上形成至少含10％的铅氧化物的氧化物膜的工序。
还有在这里，上述半导体装配部件中，包括半导体装置所用的引线框架，具备锡焊到IC芯片的电极上的导电箔的TAB(Tape Automated Bonding)带和装配半导体装置的电路基板等等。还有，焊接装配半导体芯片的电极或外部管腿的，是TAB带或者电路基板。
如上所述，本发明的表面装式半导体装置由于在用焊接或热压焊装配的外部管腿等的装配表面上已形成了金属碳酸盐膜，所以可以确实防止装配表面在保管期间的氧化。这样一来，半导体装置向电路基板的焊接，由于要把作为可用的焊接材料的焊锡熔融和固化来进行，故在该焊接过程，用其热使金属碳酸盐膜分解，付CO3飞散开来而留下活泼的金属，故大幅度地提高了焊锡对装配构件表面的浸润性而得到确实可靠地锡焊。热压焊等等的情况下也与此一样。
此外，本发明的表面装式半导体装置，由于在用焊接或热压焊装配外部管腿等等的面上，形成了易于焊接等的金属镀层，还在其上边形成有金属碳酸盐膜，所以可以确实地防止在保管期间金属镀层的表面的氧化。这样一来，由于半导体装置向电路基板的焊接是把作为可用焊接材料的焊锡熔融和固化来进行的。故在该焊接过程中，用其热量使金属碳酸盐膜分解，CO3飞走，留下活泼的金属，因而大幅度地提高了焊锡对金属镀层的浸润性，可以得到确实的锡焊。热压焊等等的情况下与此相同。
此外，本发明的表面装式半导体装置，在焊接外部管腿等等的面上，在已形成了Pb-Sn系镀锡层的情况下，当进行与实施例1相同的处理时，则在该表面上形成PbO2和SnO2的氧化物膜。这种情况下，氧化物中，至少含有10％的铅氧化物(PbO2)，铅氧化物在焊接过程中借助于其热分解而变化为性能活泼的铅，对此，锡氧化物不因其热而分解。所以，在表面上形成的铅氧化物在焊接时热分解而使装配表面活性化、洁净化，因此可以得到确实的焊接。
此外，本发明的半导体装配部件，由于在装配半导体芯片，连接细丝，半导体芯片的电极或外部管腿的装配表面上，已形成了金属碳酸膜，故可以确实防止保管期间装配表面的氧化。这样一来，在进行装配时，借助于热使金属碳酸盐分解，CO3飞走而留下化学性能活泼的金属。大幅度提高了焊锡对装配表面的浸润性和热压焊性，因而可得到确实的焊接。
另外，本发明的半导体装配部件，由于在装配半导体芯片，连接细丝、半导体芯片的电极或外部管腿等等的表面上，形成了易于焊接或热压焊的金属镀层，并还在其上边形成了金属碳酸盐膜，故可以防止在保管期间金属镀层的表面的氧化。这样一来，在装配之际，借助于热使金属碳酸盐膜的分解，CO3飞走，性能活泼的金属留下，而得以使金属镀层表面活性化、洁净化，故大幅度地提高了焊锡对金属镀层表面的浸润性和热压焊性，从而得到确实地焊接。
此外，本发明的半导体装配部件，在用焊接装配半导体芯片等等的电极或外部管腿的装配表面上形成Pb-Sn系的镀锡层。再在其上边形成至少含10％的铅氧化物的氧化物膜。该氧化物膜是稳定的，且在保管中也不会变化。在装配时，借助于热把氧化物膜中的铅氧化物(PbO2)热分解，形成活性的(金属)铅，所以大幅度地提高了焊接表面的锡浸润性，尽管焊锡量很少，却可得到确实的焊接，也不会从焊接面向侧部吐出焊锡。
另外，本发明的表面装式半导体装置或者半导体装配部件的制造方法，由于把用焊接或热压焊装配表面装式半导体装置或半导体装配部件等等的装配表面，与含有炭，也可以含有氮、氟、氨、硝酸离子、界面活性剂之类的具有活性作用的成分的溶液接触以在装配表面上形成了金属碳酸盐膜，所以在制造和保管过程中不会因周围环境而氧化、污染装配表面，从而保证了装配时的确实可靠的焊接。
此外，本发明的表面装式半导体装置或者半导体装配部件的制造方法、由于在把用焊接或热压焊装配表面装式半导体装置或半导体装配部件的装配表面放入金属镀膜处理槽中形成易于焊接或热压焊的金属镀层之后，在该金层镀层的表面上含炭，也可以含有氯、氟、氨、硝酸离子、界面活性剂之类的具有活性作用的成分的溶液中，在金属镀层的表面上形成金属碳酸盐膜，故在制造和保管过程不会因周围环境使金属镀层表面氧化和受到污染，保证了装配时的确实可靠的焊接。
另外，本发明的表面装式半导体装置或半导体装配部件的制造方法，由于在把用焊接进行装配表面装式半导体装置或半导体芯片的电极或者外部管腿的半导体装配部件的表面放入金属镀膜处理槽中形成镀锡层之后，在该镀锡层的表面上，在含碳，也可以含有氯、氟、氨、硝酸离子、界面活性剂之类的具有活性作用的成分的溶液中，在Pb-Sn系的镀锡层的表面上形成至少含10％的铅氧化物的氧化物膜，故在制造和保管过程中不会因周围环境使镀锡层表面氧化和被污染，从而保证装配时的确实可靠的焊接。
下面对附图作一简单说明。
图1是本发明的实施例1的引线框架的关键部分的断面图。
图2是用于形成实施例1的金属碳酸盐膜的金属碳酸盐膜形成用处理装置的断面图。
图3的断面图示出了本发明的实施例2的表面装式半导体装置和电路基板的装配状态。
图4的断面图示出了本发明的实施例3的表面装式半导体装置和电路基板的装配状态。
图5的断面图示出了本发明的实施例4的TAB式半导体装置的装配状态。
图6是现有的引线框架，图6(a)是其平面图，图6(b)是其断面图。
图7是现有镀膜处理装置的断面图。
图8是断面图示出了现有的表面装式半导体装置和电路基板的装配状态。
图9给出了把现有的IC安装到电路基板上去的状况。
实施例1
以下，参照附图说明本发明的实施例。图1是引线框架的关键部位断面图，与现有图的图6(b)相对应。在图中，1是引线框架1，它由内部引线2、岛3和金属镀层4构成。4a，4b是由易于焊接或热压焊的银、金、铜等构成的镀层，在本实施例中是镀银层。16a，16b是形成于镀银层4a，4b的整个面上的金属碳酸盐膜。该金属碳酸盐膜16a，16b，如后所述，把镀银层4a，4b放到收容有至少含碳、也可以含有氯、氟、氨、硝酸离子、界面活性剂之类的有活性作用的成分的溶液的处理水槽内浸泡并使之与溶液接触而形成。不言而喻，金属碳酸盐膜的金属，与使用作为镀层的金属相对应地是银、金、铜等等。还有，在图中，与现有图中的部件标以相同符号的是与现有例相同或相等的部件，以下，仅对各实施例中新增加的符号的部件进行说明。此外，在本专利申请的图中，把金属碳酸盐膜16a，16b画成为在镀银层4a，4b的表面上重迭形成。但这样画仅仅是为方便起见，实际上金属碳酸盐膜16a，16b是使镀银层4a，4b的表面变化成为薄的碳酸盐膜的。
其次，说明本实施例中的具有金属碳酸盐膜16a，16b的引线框架1的制造工序。图2是用于形成金属碳酸盐膜的处理装置。该活性膜形成处理装置44由已放入氰化钠10±5(％)溶液的活性槽45。已放氯20±5ppm溶液的金属碳酸盐膜处理槽46，纯水水洗槽47，超纯水水洗槽48构成。在用该处理装置44形成金属碳酸盐膜16的时候，首先，把引线框架I放到活性槽45中去，在约30秒的时间内进行镀银层4的表面的洁净化和活性化。之后，把它放入金属碳酸盐膜处理槽46中，在已活性化的镀银层4a，4b的表面上形成0.1-20ng/cm2左右的金属碳酸盐膜。之后，依次用纯水水洗槽47和超纯水水洗槽48进行清洗，使生成膜稳定。之后，把从超纯水水洗槽48中取出来的引线框架1放入干燥装置(未画出)里边去进行除水的干燥，以结束带有在表面上已形成金属碳酸盐膜16a，16b的镀银层4a，4b的引线框架1的制造。
还有，实际上形成金属碳酸盐膜16a、16b所必须的部分仅仅是镀银层4a、4b的表面，但在本实施例中。在其制造上，在整个引线框架1上都形成了这种膜，这样做也没什么问题。
其次，说明这样制成的金属碳酸盐膜16a，16b在IC装配工序中的作用。首先，在已被覆有已形成了金属碳酸盐膜16a，16b的镀银层4a，4b的引线框架1的岛3上边焊接IC芯片5的时候，用焊接时的热量，使岛3上的镀银层4b上边的金属碳酸盐膜16b热分解使金属碳酸盐膜16b的CO3飞走。结果是镀银层4b的表面活性化和洁净化的同时，留下活性的Ag，大幅度地提高了镀银层4b表面的金属碳酸膜16b的焊锡浸润性。若采用本发明的实验，在用Pb95(％)和Sn5(％)的焊锡把IC芯片5焊到现有的镀银层4b上去的时候，在360℃的温度下要焊1.5秒的时间，但若用相同的焊锡，把IC芯片5焊到附有本实施例的金属碳酸盐膜16的镀银层4b上去的时候，在320℃的温度下可进行0.5秒的焊接。这是在镀银层4b的表面上生成的金属碳酸膜16b在320℃的热应力下进行热分解，使CO3飞走，在镀银层4b表面上留下活性的银这一结果所产生的效果。
其次，在把由Au构成的连接细丝9的脊背部分10热压焊到附有已形成了金属碳酸盐膜16a的镀银层4a的引线框架1上去的时候，借助于该压焊时所加的热，使镀银层4a上的金属碳酸盐膜16a热分解，使CO3飞走，留下Ag。结果是镀银层4a的表面活性化，洁净化。因此，大幅度地提高了该已洁净化后的镀银层4a的表面的热压焊性，可以大幅度地缩短为进行热压焊所加的温度和时间。
还有，以上的金属碳酸盐16a、16b除了在装配时被加热、热分解和飞走时以外，起着保护膜的作用，保护脊背压焊部分表面或芯焊部分表面免受周围环境的空气所产生的氧化和污染。
另外，在以上的说明中，在引线框架1的内部引线2和岛3的上边形成的镀银层4a，4b的表面上，使之形成有金属碳酸盐膜16a，16b，但是，也可在把内部引线2和岛3的表面洁净化之后，在其表面上直接形成金属碳酸盐膜。
实施例2
其次，参照图面说明本发明的第2实施例。图3的断面图示出了采用了本发明的表面装式半导体装置和电路基板的装配状态。在图中，20是电路基板，21是由玻璃树脂材料等构成的基板。22是在基板21上把铜箔图形化而形成的金属布线，23是设置于金属布线22的规定位置上的，焊接装配IC14或者电阻、电容等无源器件(都未画出)的，镀有银、锡、金、铜等等形成的基板电极。24是形成为把基板21和金属布线22复盖起来的绝缘膜，13是在外部管腿12的表面上形成的。由银、锡之类的易于焊接的金属制成的金属镀层，17a是形成于金属镀层13上边的金属碳酸盐膜，17b是形成于基板电极23上的金属碳酸盐膜，18是焊条，它不含用于活性化的助焊剂，厚度比如说约20-30μm。
把IC14和电路基板20像上述那样的构成并装配起来的时候，和现有技术一样，要用红处线加热等等使焊条18熔融。这样的话，外部管腿12的金属镀层13上的金属碳酸盐膜17a和基板由极23上的金属碳酸盐膜17b就被该热分解，在金属镀层13和基板电极23上留下Ag而活性化、洁净化。因此，大幅度地提高了金属镀层13和基板电极23的表面的焊锡浸润性，得到了容易且确实的锡焊焊接口而且，在这种情况下，由于焊条18的量与现有技术相比可以大幅度减少，故熔融焊锡不会从焊接面向侧部吐出而使相邻外部管腿12和基板电极23之间形成桥接。还有，在这一实施例形成中，金属碳酸盐膜17a，17b的形成可以应用与在第1实施例说过的方法相同的方法来进行。此外，在第2实施例中，已经示出在外部管腿12上边先形成金属镀层13，再在其上边形成金属碳酸盐膜17a，但也可对外部管腿12的表面清洗过之后，在其表面上直接形成金属碳酸盐膜17a。
实施例3
其次，参照附图说明本发明的第3实施例。图4的断面图示出采用了本发明的表面装式半导体装置和电路基板的装配状态。在图中，19a，19b分别是形成于外部管腿12和基板电极23的浸润性从而可得到确实的焊接。
还有，在上述镀层28为Pb-Sn系的焊锡镀层的情况下，进行与实施例1的情况下相同的处理，在焊锡镀层上边形成至少含10％以上、理想的是含有20％以上的铅氧化物(PbO2)的氧化物膜。这样一来，当加热压焊凸起30和辐射式管腿27时，借助其热PbO2热分解，得到金属铅，使辐射式管腿27和凸起30的表面活性化，洁净化。因而，大幅度提高了Au，Ag两金属的表面的焊锡浸润性，可以得到确实的焊接。
如以所说明过的那样，在本发明的表面装式半导体装置中。由于在用于装配外部管腿等的装配表面上形成了金属碳酸盐膜，故可以确实地防止在整个保管期间外部管腿的装配表面的氧化。在用焊接等方法把半导体装置装配到电路基板上去的时候，用其热量使金属碳酸盐膜热分解，CO3飞走，剩下活性的金属，装配表面被活性化、洁净化，大幅度地改善焊锡浸润性，可以容易地得到确实的焊锡焊接。另外，在热分解的时候，CO3是以气体状态飞走，故不会留在金属表面上，处理之后，不需要清洗。
另外，在本发明的表面装式半导体装置中，在用于装配外部管腿等的装配表面上，形成有易于进行焊接等等的合适的金属和焊锡等等的金属镀层，然后再在其上边形成金属碳酸盐膜，故可以确实防止在保管期间金属镀层的装配表面的氧化。另外，在用焊接等方法把半导体装置焊到电路基板上去的时候，用其热量付金属碳酸盐热分解，使金属镀层的装配表面活性化，洁净化，大幅度地改善焊接浸润性，易于得到确实的焊接。因而，在焊接的时候，预先插入到装配面之间的焊接材料，即使是不含有用于活上边的Pb-Sn系镀锡层，32a，32b是分别形成于镀锡层19a，19b上的氧化物膜，含有铅氧化物(PbO2)和锡氧化物(SnO2)。其中，铅氧化物的比率大于10％，理想的是大于20％，在这种情况下，氧化物膜32a，32b用和实施例1的时候相同的方式形成。这样一来，当和现有技术一样，用红外线等等加热时，借助其热，氧化物膜中的PbO2(铅氧化物)受热分解产生(金属)铅，且外部管腿12和基板电极23的表面活性化，洁净化。这样，大幅度地提高了外部管腿12和基板电极23的表面的焊锡浸润性，可得到容易且确实的锡焊焊接。而且，在这种情况下，由于焊锡19a，19b的量与现有技术相比极其之少，故更不会有熔融焊锡从焊接面上向侧面部位吐出而使相邻的外部管腿12和基板电极23之间形成桥接。
实施例4
其次，参照附图说明本发明的第4实施例。图5的断面图示出采用了本发明TAB式半导体装置的装配形态。在图中，30是在IC芯片5上用Au等等形成的突起电极(以下称之为凸起)。25是TAB带，例如由厚为125μm的宽幅聚酰亚胺薄片构成的膜支承架26，和在该膜支承架26上边粘接上35μm厚的铜箔，再用光刻制版形成为管腿状的辐射式管腿27构成。28是在辐射式管腿27的表面上形成的镀Ag层，29是在镀Ag层28上与实施例1的情况同样地形成的金属碳酸盐膜。这样一来，当把凸起30和辐射式管腿27压粘并加热时。借助于其热金属碳酸盐膜29受热分解。CO3飞走而剩下Ag，使辐射式管脚27及凸起30的表面活性化、洁净化。因此，大幅度地提高了Au和Ag两者的表面的焊锡性化的助焊剂且又薄量又少的焊接材料也可得到确实的焊接。为此，熔融焊锡不会向焊接面的侧面吐出而把外部管腿或端子之间桥接起来。
此外，本发明的半导体装配部件，由于在用于装配半导体芯片，连接细丝，半导体芯片的电极或外部管腿等等的装配表面上形成了金属碳酸盐膜，故可以确实地防止在保管期间装配表面的氧化。此外，在装配时，用其热量使金属碳酸盐膜热分解，装配表面活性化、洁净化，大大地改善了焊锡浸润性和热压焊性，从而得到确实的焊接。
另外，本发明的半导体装配部件，由于在用于用焊接和热压焊装配半导体芯片，连接细丝，半导体芯片的电极或外部管腿的装配表面上，形成了易于进行焊接或热压焊的金属镀层，再在其上边形成金属碳酸盐膜，故可以确实地防止在保管期间金属镀层的装配表面的氧化。而在上述装配时，用其热量使金属碳酸盐膜热分解，金属镀层表面活性化、洁净化，大幅度地改善了焊锡浸润性和热压焊性，可容易地得到确实的焊接。
此外，本发明的半导体装配部件，由于在用于用焊接等装配半导体芯片的电极或外部管腿等等的装配表面上先形成了Pb-Sn系的焊锡镀层，然后再在其上边形成了至少含10％的铅氧化物的氧化物膜，故可以防止保管期间中的简化(对于焊接性的简化)。这样一来，在进行上述装配时，借助于装配热使氧化物膜中的铅氧化物(PbO2)热分解，焊接表面活性化、洁净化，故焊锡向焊接表面的浸润性大幅度地提高，从而得到确实的焊接。而且，由于这时的焊锡使用量极其之少。故不会从焊接面向侧面吐出而使外部管腿或电极之间形成桥接。
还有，向本发明的表面装式半导体装置或半导体装配部件的装配面上形成活性膜的方法，由于被做成为把用于用焊接或热压焊进行装配的装配表面放入到含有具有活性作用的成分的溶液中去使得在装配表面上形成活性膜，故在制造和保管过程中，装配表面不受来自周围环境的氧化和污染，从而保证了装配时的确实的焊接。
此外，在本发明的表面装式半导体装置或半导体装配部件的制造方法中，由于向装配面上形成金属碳酸盐膜的方法是，在用于用焊接或热压焊等等进行装配的装配表面上，在形成了易于焊接或热压焊的金属镀层之后。通过把它放入含有含碳成分的溶液中去的办法，在金属镀层上形成金属碳酸盐膜，所以在整个制造，保管过程中，金属镀层表面不受源于周围环境的氧化、污染，从而保证了装配时的确实的焊接。
还有，在本发明的表面装式半导体装置或半导体装配部件的制造方法中。由于是在用于用焊接等等进行装配的装配表面上，在形成焊锡镀层之后，把它放入到含有含碳成分的溶液中去的办法，使之在焊锡镀层上形成至少含有10％的铅氧化物的氧化物膜，故在整个制造、保管过程中，不受源于周围环境的对焊锡镀层表面的氧化和污染，因面保证了装配时的确实的焊接。

Claims (15)

1.一种表面装式半导体装置，其特征在于，在用焊接等进行装配外部引线等的装配表面上形成金属碳酸盐膜而构成。
2.如权利要求1中所述的表面装式半导体装置，其特征在于，在上述装配表面上先形成金属镀层，再在上述金属镀层上形成金属碳酸盐膜而构成。
3.一种半导体装配部件，其特征在于，在引线框架，TAB带、电路基板等等的半导体装配部件中，在用焊接或热压焊等装配半导体芯片的电极或外部引线等的装配表面上形成金属碳酸盐膜而构成。
4.如权利要求3中所述的半导体装配部件，其特征在于，先在装配表面上形成金属镀层，再在上述金属镀层上形成金属碳酸盐膜而构成。
5.一种表面装式半导体装置或半导体装配部件的制造方法，其特征在于，具备有：准备具有装配表面的表面装式半导体装置或半导体装配部件的工序和，使上述装配表面与含碳溶液接触，在上述装配表面上形成金属碳酸盐膜的工序。
6.如权利要求5所述的制造方法，其特征在于，上述溶液含有氯、氟、氨、硝酸离子、界面活性剂等等有活性作用的成分。
7.如权利要求5或6所述的制造方法，其特征在于，使上述装配表面与上述溶液接触的工序、包括把上述装配表面浸泡于上述溶液中去的工序。
8.一种表面装式半导体装置或半导体装配部件的制造方法，其特征在于，具备有：准备具有装配表面的表面装式半导体装置或半导体装配部件的工序，至少在上述装配表面上形成金属镀层的工序，使上述金属镀层与含碳溶液接触以形成金属碳酸盐膜的工序。
9.如权利要求8所述的制造方法，其特征在于，形成上述金属镀层的工序包括把上述装配表面放入金属镀膜处理槽里去的工序。
10.如权利要求8或9所述的制造方法，其特征在于，形成上述金属碳酸盐的工序包括放入到含有氯、氟、氨、硝酸离子、界面活性剂等等的活性作用的成分的溶液中去的工序。
11.一种表面装式半导体装置，其特征在于，在外部引线等等的装配表面上，先形成含铅的焊料镀层，再在上述焊料镀层上边形成至少含10％的铅化物的氧化物膜而构成。
12.一种半导体装配部件，其特征在于，在引线框架，TAB带、电路基板等的半导体装配部件中，在焊接装配半导体芯片的电极和外部引线的装配表面上，形成含铅的焊料镀层，再在上述焊料镀层的上形成至少含10％的铅氧化物的氧化物膜而构成。
13.一种表面装式半导体装置或半导体装配部件的制造方法，其特征在于，具备：准备具有已形成含铅焊料镀层的装配表面的表面装式半导体装置和半导体装配部件的工序；使上述装配表面与含碳溶液接触，在上述装配面上边形成至少含10％的铅氧化物的氧化物膜的工序。
14.如权利要求13所述的制造方法，其特征在于，上述溶液含有氯、氟、氨、硝酸离子、界面活性剂等等的有活性作用的成分。
15.如权利要求13或14所述的制造方法，其特征在于，使上述装配表面与上述溶液接触的工序包含把上述装配表面浸泡于上述溶液中去的工序。
CN96107937A 1995-06-09 1996-06-07 表面装式半导体装置，半导体装配部件以及它们的制造方法 Pending CN1148732A (zh)

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