CN114830365B - 多层接合型光电变换元件及其制造方法 - Google Patents

多层接合型光电变换元件及其制造方法 Download PDF

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CN114830365B
CN114830365B CN202080006271.1A CN202080006271A CN114830365B CN 114830365 B CN114830365 B CN 114830365B CN 202080006271 A CN202080006271 A CN 202080006271A CN 114830365 B CN114830365 B CN 114830365B
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layer
electrode
photoactive
photoelectric conversion
photoactive layer
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CN114830365A (zh
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五反田武志
户张智博
齐田穣
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Toshiba Corp
Toshiba Energy Systems and Solutions Corp
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Toshiba Corp
Toshiba Energy Systems and Solutions Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/15—Organic photovoltaic [PV] modules; Arrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/18—Interconnections, e.g. terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN202080006271.1A 2020-11-16 2020-11-16 多层接合型光电变换元件及其制造方法 Active CN114830365B (zh)

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PCT/JP2020/042625 WO2022102128A1 (ja) 2020-11-16 2020-11-16 多層接合型光電変換素子およびその製造方法

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US (1) US20230307560A1 (https=)
JP (1) JP7247421B2 (https=)
CN (1) CN114830365B (https=)
DE (1) DE112020007777T5 (https=)
WO (1) WO2022102128A1 (https=)

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JP7114821B1 (ja) 2022-03-18 2022-08-08 株式会社東芝 多層接合型光電変換素子及び多層接合型光電変換素子の製造方法
KR20240045490A (ko) * 2022-09-30 2024-04-08 한화솔루션 주식회사 양면 수광형 실리콘 / 페로브스카이트 텐덤 태양전지
CN117279408B (zh) 2023-11-15 2024-02-27 天合光能股份有限公司 叠层电池及其制备方法
CN117317041A (zh) * 2023-11-29 2023-12-29 浙江晶科能源有限公司 太阳能电池及光伏组件
JP7631573B1 (ja) 2024-01-30 2025-02-18 株式会社東芝 太陽電池モジュールおよび太陽電池モジュールの製造方法
JP7815362B1 (ja) 2024-08-28 2026-02-17 シャープエネルギーソリューション株式会社 両面受光型太陽電池

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CN109786423A (zh) * 2019-01-09 2019-05-21 蜂巢能源科技有限公司 钙钛矿/硅叠层太阳能电池及其制备方法和应用
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CN210156403U (zh) * 2019-06-29 2020-03-17 深圳黑晶光电科技有限公司 一种串联型钙钛矿/同质结硅叠层太阳能电池

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WO2010140522A1 (en) 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
WO2011077963A1 (ja) 2009-12-25 2011-06-30 三菱電機株式会社 太陽電池およびその製造方法
US20110132444A1 (en) * 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof
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JP2013106025A (ja) 2011-11-14 2013-05-30 Ren Solation Co Ltd 光電変換素子
KR101149891B1 (ko) * 2011-12-09 2012-06-11 한화케미칼 주식회사 태양전지 및 이의 제조방법
CN109196678B (zh) 2016-05-09 2022-07-15 株式会社钟化 层叠型光电转换装置和其制造方法
JP2019009402A (ja) 2017-06-28 2019-01-17 国立研究開発法人物質・材料研究機構 太陽電池およびその製造方法
JP6626482B2 (ja) 2017-08-10 2019-12-25 株式会社東芝 半導体素子およびその製造方法
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WO2010087312A1 (ja) * 2009-01-28 2010-08-05 三菱電機株式会社 薄膜光電変換装置およびその製造方法
JP2010272651A (ja) * 2009-05-20 2010-12-02 Mitsubishi Electric Corp 薄膜太陽電池およびその製造方法
CN106058054A (zh) * 2016-07-13 2016-10-26 苏州协鑫集成科技工业应用研究院有限公司 叠层太阳能电池及其制备方法
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CN110867516A (zh) * 2019-11-16 2020-03-06 东方日升（常州）新能源有限公司 新型基于钙钛矿和晶硅背钝化叠层太阳电池及其制造方法

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CN114830365A (zh) 2022-07-29
DE112020007777T5 (de) 2023-09-21
US20230307560A1 (en) 2023-09-28
JPWO2022102128A1 (https=) 2022-05-19
WO2022102128A1 (ja) 2022-05-19
JP7247421B2 (ja) 2023-03-28

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