CN114695133A - 一种带通孔金刚石集成三维芯片的制备方法 - Google Patents
一种带通孔金刚石集成三维芯片的制备方法 Download PDFInfo
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- CN114695133A CN114695133A CN202210300888.5A CN202210300888A CN114695133A CN 114695133 A CN114695133 A CN 114695133A CN 202210300888 A CN202210300888 A CN 202210300888A CN 114695133 A CN114695133 A CN 114695133A
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- Prior art keywords
- diamond
- hole
- chip
- copper
- bonded
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210300888.5A CN114695133B (zh) | 2022-03-25 | 2022-03-25 | 一种带通孔金刚石集成三维芯片的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210300888.5A CN114695133B (zh) | 2022-03-25 | 2022-03-25 | 一种带通孔金刚石集成三维芯片的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114695133A true CN114695133A (zh) | 2022-07-01 |
CN114695133B CN114695133B (zh) | 2023-04-28 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202210300888.5A Active CN114695133B (zh) | 2022-03-25 | 2022-03-25 | 一种带通孔金刚石集成三维芯片的制备方法 |
Country Status (1)
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CN (1) | CN114695133B (zh) |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5272104A (en) * | 1993-03-11 | 1993-12-21 | Harris Corporation | Bonded wafer process incorporating diamond insulator |
US5328715A (en) * | 1993-02-11 | 1994-07-12 | General Electric Company | Process for making metallized vias in diamond substrates |
US5526768A (en) * | 1994-02-03 | 1996-06-18 | Harris Corporation | Method for providing a silicon and diamond substrate having a carbon to silicon transition layer and apparatus thereof |
EP0717125A1 (en) * | 1994-12-15 | 1996-06-19 | General Electric Company | Bonding of diamond to a substrate |
US20120153294A1 (en) * | 2010-12-17 | 2012-06-21 | Raytheon Company | Semiconductor Structures Having Directly Bonded Diamond Heat Sinks and Methods for Making Such Structures |
CN107523828A (zh) * | 2017-09-04 | 2017-12-29 | 哈尔滨工业大学 | 一种GaN与金刚石复合散热结构的制备方法 |
CN108109955A (zh) * | 2017-12-13 | 2018-06-01 | 华中科技大学 | 一种用于填充垂直硅通孔tsv的复合材料及其填充方法 |
US20200122268A1 (en) * | 2016-12-28 | 2020-04-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Pulsed laser method for machining a diamond |
CN111098039A (zh) * | 2019-12-20 | 2020-05-05 | 西安交通大学 | 一种pcd车齿刀的紫外纳秒激光切割方法 |
US20200171607A1 (en) * | 2017-08-22 | 2020-06-04 | DiamSense Ltd. | System and method for creation of a predetermined structure from a diamond bulk |
CN111900200A (zh) * | 2020-06-24 | 2020-11-06 | 西安交通大学 | 一种金刚石基氮化镓复合晶片及其键合制备方法 |
JP6899062B1 (ja) * | 2020-05-18 | 2021-07-07 | 深▲せん▼市創智成功科技有限公司 | Icボードのスルーホールを充填するための電気銅めっき液およびその電気めっき方法 |
-
2022
- 2022-03-25 CN CN202210300888.5A patent/CN114695133B/zh active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5328715A (en) * | 1993-02-11 | 1994-07-12 | General Electric Company | Process for making metallized vias in diamond substrates |
US5272104A (en) * | 1993-03-11 | 1993-12-21 | Harris Corporation | Bonded wafer process incorporating diamond insulator |
US5526768A (en) * | 1994-02-03 | 1996-06-18 | Harris Corporation | Method for providing a silicon and diamond substrate having a carbon to silicon transition layer and apparatus thereof |
EP0717125A1 (en) * | 1994-12-15 | 1996-06-19 | General Electric Company | Bonding of diamond to a substrate |
US20120153294A1 (en) * | 2010-12-17 | 2012-06-21 | Raytheon Company | Semiconductor Structures Having Directly Bonded Diamond Heat Sinks and Methods for Making Such Structures |
US20200122268A1 (en) * | 2016-12-28 | 2020-04-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Pulsed laser method for machining a diamond |
US20200171607A1 (en) * | 2017-08-22 | 2020-06-04 | DiamSense Ltd. | System and method for creation of a predetermined structure from a diamond bulk |
CN107523828A (zh) * | 2017-09-04 | 2017-12-29 | 哈尔滨工业大学 | 一种GaN与金刚石复合散热结构的制备方法 |
CN108109955A (zh) * | 2017-12-13 | 2018-06-01 | 华中科技大学 | 一种用于填充垂直硅通孔tsv的复合材料及其填充方法 |
CN111098039A (zh) * | 2019-12-20 | 2020-05-05 | 西安交通大学 | 一种pcd车齿刀的紫外纳秒激光切割方法 |
JP6899062B1 (ja) * | 2020-05-18 | 2021-07-07 | 深▲せん▼市創智成功科技有限公司 | Icボードのスルーホールを充填するための電気銅めっき液およびその電気めっき方法 |
CN111900200A (zh) * | 2020-06-24 | 2020-11-06 | 西安交通大学 | 一种金刚石基氮化镓复合晶片及其键合制备方法 |
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CN114695133B (zh) | 2023-04-28 |
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Inventor after: Zhu Jiaqi Inventor after: Zhao Kechen Inventor after: Dai Bing Inventor after: Deng Chaojun Inventor after: Wei Xiaobin Inventor after: Zhao Jiwen Inventor after: Han Jiecai Inventor before: Zhu Jiaqi Inventor before: Zhao Kechen Inventor before: Zhao Jiwen Inventor before: Dai Bing Inventor before: Han Jiecai |
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